![](/html/83/83fe/83fe854e831a7790d9c0627010faf12010acf5c2d5d5bdd9d9c21f6083966b39/bg1.png)
查询STF6NK50Z供应商查询STF6NK50Z供应商
N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK
STP6NK50Z - STF6NK50Z
STD6NK50Z
Zener-Protected SuperMESH™ MOSFET
TYPE V
STP6NK50Z
STF6NK50Z
STD6NK50Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
500 V
500 V
500 V
(on) = 0.93 Ω
DS
DSS
R
DS(on)
<1.2Ω
<1.2Ω
<1.2Ω
I
D
5.6 A
5.6 A
5.6 A
Pw
90 W
25 W
90 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down,specialcareis taken to ensure a very good dv/dt capability for the
most dem anding applications. Such series complements ST full range of high voltage MOSFETs i ncluding revolutionary MDm es h™ products.
TO-220 TO-220FP
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDER CODES
PART NUMBER MARKING PACKAGE PACKAGING
STP6NK50Z P6NK50Z TO-220 TUBE
STF6NK50Z F6NK50Z TO-220FP TUBE
STD6NK50ZT4 D6NK50Z DPAK TAPE & REEL
1/12April 2004
![](/html/83/83fe/83fe854e831a7790d9c0627010faf12010acf5c2d5d5bdd9d9c21f6083966b39/bg2.png)
STP6NK50Z - STF6NK50Z - STD6NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6NK50Z
STD6NK50Z
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC=25°C
Drain Current (continuous) at TC= 100°C
5.6 5.6 (*) A
3.5 3.5 (*) A
Drain Current (pulsed) 22.4 22.4 (*) A
Total Dissipation at TC=25°C
90 25 W
Derating Factor 0.72 0.2 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤ 5.6A, di/dt ≤ 200 A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj
≤ T
JMAX.
-55to150 °C
STF6NK50Z
500 V
500 V
THERMAL DATA
TO-220
DPAK
Rthj-case Thermal Resistance Junction-case Max 1.38 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
TO-220FP
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C, ID=IAR,VDD=50V)
j
5.6 A
180 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-SourceBreakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes hav e specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this r es pect the Zener v olt age is appropriate to achieve an efficient and
cost-effective intervention to prote ct the device’s integrity. These integrated Z ener diodes thus avoid the
usage of external components.
2/12
![](/html/83/83fe/83fe854e831a7790d9c0627010faf12010acf5c2d5d5bdd9d9c21f6083966b39/bg3.png)
STP6NK50Z - STF6NK50Z - STD6NK50Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS O THERWISE SPECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 500 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
=MaxRating
DS
=MaxRating,TC= 125 °C
V
DS
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 50µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 2.8 A 0.93 1.2 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=8V,ID=2.8A 4.3 S
fs
C
oss eq.
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
iss
oss
rss
t
r
t
gs
gd
f
g
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=25V,f=1MHz,VGS= 0 690
V
DS
100
20
VGS=0V,VDS= 0V to 400V 52 pF
=250V,ID=2.8A
V
DD
R
=4.7Ω VGS=10V
G
(Resistive Load see, Figure 3)
12
23.5
31
23
=400V,ID=5.6A,
V
DD
VGS=10V
24.6
4.9
13.3
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area .
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=5.6A,VGS=0
I
SD
V
DD
(see test circuit, Figure 5)
ISD= 5.6 A, di/dt = 100 A/µs
VDD=48V,Tj= 150°C
(see test circuit, Figure 5)
= 5.6 A, di/dt = 100 A/µs
=48V,Tj=25°C
254
1.2
10
360
1.9
11
when VDSincreases from 0 to 80%
oss
5.6
22.4
1.6 V
A
A
ns
µC
A
ns
µC
A
3/12
![](/html/83/83fe/83fe854e831a7790d9c0627010faf12010acf5c2d5d5bdd9d9c21f6083966b39/bg4.png)
STP6NK50Z - STF6NK50Z - STD6NK50Z
Thermal Impedance for TO-220Safe Operating Area for TO-220
Thermal Impedance for TO-220FPSafe Operating Area for TO-220FP
4/12
Thermal Impedance for DPAKSafe Operating Area for DPAK