ST STD65NF06, STP65NF06 User Manual

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STD65NF06

STP65NF06

N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220

STripFET™ II Power MOSFET

General features

Type	VDSS	RDS(on)	ID
STD65NF06	60V	<14mΩ	60A
STP65NF06	60V	<14mΩ	60A

■Standard level gate drive

■100% avalanche tested

Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

3 3

	1	2
		1
	DPAK	TO-220

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number	Marking	Package	Packaging
STD65NF06	D65NF06	DPAK	Tape & reel
STP65NF06	P65NF06	TO-220	Tube

July 2006

Rev 1

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www.st.com

Contents	STD65NF06 - STP65NF06

Contents

1	Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		4
	2.1	Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
3	Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		8
4	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		9
5	Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		12
6	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		13

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STD65NF06 - STP65NF06	Electrical ratings

1 Electrical ratings

Table 1.	Absolute maximum ratings
Symbol		Parameter	Value	Unit
VDS		Drain-source voltage (VGS = 0)	60	V
VGS		Gatesource voltage	± 20	V
ID		Drain current (continuous) at TC = 25°C	60	A
ID		Drain current (continuous) at TC = 100°C	42	A
(1)		Drain current (pulsed)	240	A
IDM
Ptot		Total dissipation at TC = 25°C	110	W
		Derating Factor	0.73	W/°C
dv/dt (2)		Peak diode recovery voltage slope	10	V/ns
(3)		Single pulse avalanche energy	390	mJ
EAS
Tstg		Storage temperature	-55 to 175	°C
Tj		Max. operating junction temperature

1.Pulse width limited by safe operating area.

2.ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

3.Starting Tj = 25 °C, ID = 30A, VDD = 40V

Table 2.	Thermal data
Symbol	Parameter	TO-220		DPAK	Unit
Rthj-case	Thermal resistance junction-case max	1.36			°C/W
Rthj-amb	Thermal resistance junction-ambient max	62.5		--	°C/W
Rthj-pcb(1)	Thermal resistance junction-pcb max	--		50	°C/W
Tl	Maximum lead temperature for soldering	300		--	°C/W
	purpose (for 10sec. 1.6mm from case)

1. When mounted on FR-4 of 1 inch², 2 oz Cu

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Electrical characteristics	STD65NF06 - STP65NF06

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 3.	On/off states
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250µA, VGS =0	60			V
	breakdown voltage
IDSS	Zero gate voltage	VDS = Max rating			1	µA
	drain current (VGS = 0)	VDS = Max rating,@125°C			10	µA
IGSS	Gate-body leakage	VGS = ± 20V			±100	nA
	current (VDS = 0)
VGS(th)	Gate threshold voltage	VDS = VGS, ID = 250µA	2		4	V
RDS(on)	Static drain-source on	VGS = 10V, ID = 30A		11.5	14	mΩ
	resistance

Table 4.		Dynamic
Symbol		Parameter			Test conditions			Min.	Typ.	Max.	Unit
g	(1)	Forward	V	DS	= 25V I	D	= 30A		50		S
		transconductance
	fs				,
Ciss		Input capacitance							1700		pF
		Output capacitance	VDS = 25V, f = 1MHz,
Coss									400		pF
		Reverse transfer	VGS = 0
Crss									135		pF
		capacitance
td(on)		Turn-on delay time	VDD = 30V, ID = 30A						15		ns
	tr	Rise time							60		ns
			RG = 4.7Ω VGS = 10V
td(off)		Turn-off delay time							40		ns
			(see Figure 12)
	tf	Fall time							16		ns
	Qg	Total gate charge	VDD = 30V, ID = 60A,						54	75	nC
Qgs		Gate-source charge	VGS = 10V, RG = 4.7Ω						10		nC
Qgd		Gate-drain charge	(see Figure 13)						20		nC

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

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STD65NF06 - STP65NF06				Electrical characteristics
	Table 5.	Source drain diode
	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	ISD	Source-drain current				60	A
		Source-drain current
	(1)
	ISDM	(pulsed)				240	A
	(2)	Forward on voltage	ISD = 60A, VGS = 0			1.5	V
	VSD
	trr	Reverse recovery time	ISD = 60A, di/dt = 100A/µs,		70		ns
	Qrr	Reverse recovery charge	VDD = 25V, Tj = 150°C		150		nC
	IRRM	Reverse recovery current	(see Figure 14)		4.4		A

1.Pulse width limited by safe operating area.

2.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

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