ST STD5NK60Z, STP5NK60Z, STP5NK60ZFP User Manual

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查询STP5NK60Z供应商

N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK

STD5NK60Z

STP5NK60Z - STP5NK60ZFP

Zener-Protected SuperMESH™ MOSFET

Table 1: General Features

TYPE V

STP5NK60Z
STP5NK60ZFP
STD5NK60Z

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

DS

@

DSS

TJmax

650 V
650 V
650 V

R

< 1.6 Ω
< 1.6 Ω
< 1.6 Ω

(on) = 1.2 Ω

DS(on)

I

5 A
5 A
5 A

P

d

TOT

90 W
25 W
90 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS

-

FET s including revolutionary MDmesh™ products.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL F OR OFF-LINE POW E R SUPP L IES,

ADAPTORS AND PFC

■ LIGHTING

Figure 1: Package

2

TO-220

TO-220FP

1

DPAK

Figure 2: Internal Schematic Diagram

2

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STP5NK60Z P5NK60Z TO-220 TUBE
STP5NK60ZFP P5NK60ZFP TO-220FP TUBE
STD5NK60ZT4 D5NK60 DPAK TAPE & REEL

Rev. 7

1/14December 2005

STP5NK60Z - STP5NK60ZFP- STD5NK60Z

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

TO-220/DPAK TO-220FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

(z) Pulse width l i m i ted by safe operating area
(1) ISD ≤5A, di/dt ≤200A/µs, VDD ≤ V
(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

600 V

600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

(z)

Drain Current (pulsed) 20 20 (*) A
Total Dissipation at TC = 25°C

5 5 (*) A

3.16 3.16 (*) A

90 25 W
Derating Factor 0.72 0.2 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V

Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature

Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

-55 to 150 °C

Thermal Data

TO-220/DPAK TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.39 5 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

(#) When mount ed on 1inch² FR-4, 2 Oz c opper board.

Maximum Lead Temperature For Soldering Purpose 300

°C

Table 4: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive

5 A

(pulse width limited by Tj max)

E

AS

Single Pulse Avalanche Energy

220 mJ

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Table 5: Gate-Source Zener Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZEN E R DIODES

The built-in back-to-back Zener diodes have sp ecifically been desig ned to enhance not only the dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an ef ficient and
cost-effective intervention t o protec t t he d ev ice’s i ntegrity. T hese integrated Zener d iodes thu s av oid the
usage of external components.

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STP5NK60Z - STP5NK60Z FP- STD5NK60Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 1 mA, VGS = 0 600 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (VGS = 0)

Gate-body Leaka ge

VDS = Max Rating
VDS = Max Rating, TC = 125 °C

1

50

VGS = ± 20V ±10 µA

Current (VDS = 0)

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

VDS = VGS, ID = 50µA

3 3.75 4.5 V

VGS = 10V, ID = 2.5 A 1.2 1.6 Ω

Resistance

Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS = 8 V, ID = 2.5 A 4 S

fs

C

oss eq.

C

iss

C

oss

C

rss

t

d(on)

t

t

d(off)

t

t

r(Voff)

t

t

Q
Q
Q

r

r

f
c

g
gs
gd

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Outpu t

Capacitance
Turn-on Delay Time

Rise Time
Turn-off Delay Time
Fall Time

Off-voltage Rise Time
Fall Time
Cross-over Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDS = 25V, f = 1 MHz, VGS = 0 690

90
20

VGS = 0V, VDS = 0V to 480V 40 pF

VDD = 300 V, ID = 2.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 20)

16
25
36
25

VDD = 480V, ID = 5 A,
RG = 4.7Ω, V

GS

= 10V

(see Figure 20)
VDD = 400V, ID = 5 A,

VGS = 10V
(see Figure 23)

12
10
24

26
20

34 nC

6

µA
µA

pF
pF
pF

ns
ns
ns
ns

ns
ns
ns

nC
nC

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

(2)

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: P ul se duration = 300 µs, d ut y cy cle 1.5 %.

2. Pulse wi dt h l i m ited by safe op erating area.

3. C

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD = 5 A, VGS = 0
ISD = 5 A, di/dt = 100A/µs

VDD = 30V, Tj = 150°C
(see Figure 21)

485

2.7
11

when VDS increases from 0 to 80%

oss

5

20

1.6 V

A
A

ns

µC

A

3/14

STP5NK60Z - STP5NK60ZFP- STD5NK60Z

Figure 3: Safe Operating Area For TO-220/
DPAK

Figure 4: Safe Operating Area For TO-220FP

Figure 6: Thermal Impedance For TO-220/
DPAK

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

4/14

Figure 8: Transfer Characteristics

STP5NK60Z - STP5NK60Z FP- STD5NK60Z

Figure 9: Transconductance

Figure 10: Gate Charge vs Gate-source Voltage

Figure 12: Static Drain-source On Resistance

Figure 13: Capacitance Variations

Figure 11: Normalized Gate Threshold Voltage
vs Tem pera tur e

Figure 14: Normal ized On R esistance vs Tem­perature

Figure 15:

5/14

STP5NK60Z - STP5NK60ZFP- STD5NK60Z

Figure 16: S ource-Drain Forward Char acteris­tics

Figure 17: Maximum Avalanche Energy vs
Temperature

Figure 18: Normalized BVdss vs Temperature

6/14

STP5NK60Z - STP5NK60Z FP- STD5NK60Z

Figure 19: Unclamped Inductive Load Test Cir­cuit

Figure 20: Switching Times Test Circuit For
Resistive Load

Figure 22: Unclamped Inductive Wafeform

Figure 23: Gate Charge Test Circuit

Figure 21: Test Circuit For Inductive Load
Switching and Diode Recovery Times

7/14

STP5NK60Z - STP5NK60ZFP- STD5NK60Z

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, i n compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at:

www.st.com

8/14

STP5NK60Z - STP5NK60Z FP- STD5NK60Z

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

9/14

STP5NK60Z - STP5NK60ZFP- STD5NK60Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. i nch

10/14

E

A

D

B

L3

L6

L7

F1

H

F

1
G

G

F2

123

L2

L5

L4

STP5NK60Z - STP5NK60Z FP- STD5NK60Z

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

11/14

STP5NK60Z - STP5NK60ZFP- STD5NK60Z

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

12/14

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

Table 9: Revision History

Date Revision Descrip tion of Change s

05-Apr-2005 1 First issue
29-Apr-2005 2 Modified value in Table 7.

06-Sep-2005 3 Inserted Ecopack indication

14-Oct-2005 4 Modified value on Table 1

28-Oct-2005 5 Tape & Reel info added
14-Nov-2005 6 Modified value on Table 6
15-Dec-2005 7 Various corrections

STP5NK60Z - STP5NK60Z FP- STD5NK60Z

13/14

STP5NK60Z - STP5NK60ZFP- STD5NK60Z

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nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence

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