This MOSFET series realized with STMicroelectronics
unique STripFET
™ process has specifically been de-
signed to minimize input capacitance and gate charge.
It is therefore suitable as primary swi tch in advanced
high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ DC MOTOR CONTROL
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1)Peak Diode Recovery voltage slope30V/ns
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage± 15V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed)40A
Total Dissipation at TC = 25°C
Derating Factor0.2W/°C
(2)
Single Pulse Avalanche Energy50mJ
Storage Temperature
Max. Operating Junction Temperature
(1) ISD ≤10A, di/dt ≤400A/µs, VDD =48V, Tj ≤ T
(2) Starting Tj = 25°C, Id = 7A, VDD=20 V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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