The current is set with external resistor up to 1.5
A with a ± 10 % precision; a dedicated pin allows
implementing PWM dimming. An external
capacitor allows setting the slope for the current
rise from tens of microseconds to tens of
milliseconds allowing reduction of EMI.
An open-drain pin output provides information on
load disconnection condition.
Power SO-8
The STCS1A is a BiCMOS constant current
source designed to provide a precise constant
current starting from a varying input voltage
source. The main target is to replace discrete
components solution for driving LEDs in low
voltage applications such as 5 V, 12 V or 24 V
giving benefits in terms of precision, integration
and reliability.
Figure 1.Typical application diagram for 0.5 A LED current
V
V
IN
IN
4.5V to40V
4.5V to 40V
BAT46ZFILM
BAT46ZFILM
RIN100 ohm
RIN100 ohm
OFF
OFF
OFF
OFF
C
C
BYP
BYP
0.1µF
0.1µF
ON
ON
ON
ON
Load disconnection
Load disconnection
(Open Drain output)
(Open Drain output)
V
V
PWM
PWM
EN
EN
CC
CC
DISC
DISC
STCS1A
STCS1A
C
C
SLOPE
SLOPE
10nF
10nF
DRAIN
DRAIN
C
C
DRAIN
DRAIN
0.47µF
0.47µF
FB
FB
GNDSLOPE
GNDSLOPE
R
R
FB
FB
0.2 ohm
0.2 ohm
3/19
Pin configurationSTCS1A
2 Pin configuration
Figure 2.Pin connections (top view)
DFN8
Table 2.Pin description
Pin n°SymbolNote
1V
2PWMPWM dimming input
3ENShutdown pin
4DRAINInternal N-MOSFET drain
5FB
6GNDGround
7SLOPECapacitor for slope control
8DISCLoad disconnection flag (open drain)
CC
Exp-padInternally connected to ground.
Supply voltage
Feedback input. The control loop regulates the current in such a way that the average
voltage at the FB input is 100 mV (nominal). The cathode of the LED and a resistor to
ground to set the LED current should be connected at this point.
PowerSO-8
4/19
STCS1AMaximum ratings
3 Maximum ratings
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
DC supply voltage-0.3 to +45
V
DRAINDrain pin-0.3 to +45
PWM, EN, DISCLogic pins-0.3 to + V
+ 0.3V
CC
SLOPE, FBConfiguration pins-0.3 to + 3.3V
ESDHuman body model (all pins)±2kV
(1)
T
J
T
STG
1. TJ is calculated from the ambient temperature TA and the power dissipation PD accoring the following formula:
= TA + (PD x R
T
J
than 25°C.
Junction temperature-40 to 150°C
Storage temperature range-55 to 150°C
). See Figure 16 and Figure 17 for details of max power dissipation for ambient temperatures higher
thJA
Note:Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
Table 4.Thermal data
SymbolParameterDFN8Power SO-8Unit
R
thJC
R
thJA
1. This value is referred to four-layer PCB, JEDEC standard test board.
2. With two sides, two planes PCB following EIA/JEDEC JESD51-7 standard.
Thermal resistance junction-case1012°C/W
Thermal resistance junction-ambient37.6
(1)
45
(2)
°C/W
5/19
Electrical characteristicsSTCS1A
4 Electrical characteristics
Table 5.Electrical characteristics (V
C
DRAIN
= 1 µF; C
= 100 nF typical values are at TA = 25°C, unless otherwise specified)
BYP
= 12 V; IO = 100 mA; TJ = -40 °C to 125 °C; V
CC
DRAIN
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
CC
Supply voltage range4.540V
Output current range11500mA
I
O
Output currentR
Regulation (percentage with
respect to V
V
FB
Feedback voltageIO = 0 to 1.5A90100110mV
CC
=12V)
= 0.2 Ω500mA
FB
V
= 4.5 to 40 V,
CC
IO = 100mA; V
DRAIN
= 1 V
-1+1%
On Mode450750
V
LEAK
TR/T
DISC
I
CC
DROP
DRAIN
T
D
Quiescent current (Measured on
VCC pin)
Dropout voltage (V
DRAIN
to GND)
Drain leakage currentShutdown; V
Rise/Fall time of the current on
F
PWM transition
Delay on PWM signal
(see Figure 1)
Low level voltageI
Leakage currentV
Load disconnection threshold
DRAIN
-GND)
(V
Shutdown Mode;
= 5 to 12V
V
CC
Shutdown Mode;
V
= 12 to 40V
CC
I
= 100 mA0.120.16
O
= 1.5 A0.580.9
I
O
= 40 V10µA
DRAIN
C
T
V
C
V
C
= 10 nF,
SLOPE
= -40 °C to 105 °C
J
rising, V
PWM
= floating
SLOPE
falling, V
PWM
= floating
SLOPE
= 5 mA0.20.5V
SINK
= 5 V1µA
DISC
CC
CC
= 12 V
= 12 V
800µs
3
1.2
DISC Turn-ON75
DISC Turn-OFF110
1
3
= 1 V;
µA
V
µs
mV
Thermal
Protection
Shutdown temperature155
°C
Hysteresis25
Logic Inputs (PWM and EN)
V
V
Input low level0.4V
L
Input high level1.2V
H
EN, PWM leakage current V
PWM input leakage currentV
= 5 V; V
EN
= 40 V60
EN
= 40 V120
PWM
= 5 V2
PWM
µAEN input leakage currentV
Note:All devices 100 % production tested at TA = 25 °C. Limits over the operating temperature
range are guaranteed by design.
6/19
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