![](/html/82/82dd/82dd78383a321c642da78ae1ce47afa53715fb1b7cb18024940fc7d2e266944a/bg1.png)
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
Table 1: General Features
STC03DE220HV
ESBT
Figure 1: Package
2200 V - 3 A - 0.55 W
Preliminary Data
V
CS(ON)
1 V 3 A 0.55 W
n LOW EQUIVALENT ON RESISTANCE
n VERY FAST-SWITCH, UP TO 150 kHz
n VERY LOW C
I
C
DRIVEN BY RG = 4.7 W
ISS
R
CS(ON)
APPLICATION
n AUX SMPS FOR THREE PHASE MAINS
DESCRIPTION
The STC03DE220HV is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC03DE220HV is designed for use in aux
flyback smps for any three phase application.
4
3
2
1
TO247-4L HV
Figure 2: Internal Schematic Diagram
Electrical Symbol Device Structure
Table 2: Order Code
Part Number Marking Package Packaging
STC03DE220HV C03DE220HV TO247-4L HV TUBE
Rev. 1
1/6July 2005
![](/html/82/82dd/82dd78383a321c642da78ae1ce47afa53715fb1b7cb18024940fc7d2e266944a/bg2.png)
STC03DE220HV
Table 3: Absolute Maximum Ratings
Symbol Parameter Value Unit
V
CS(SS)
V
BS(OS)
V
SB(OS)
V
I
I
CM
I
I
BM
P
T
stg
T
Table 4: Thermal Data
Symbol Parameter Unit
R
thj-case
Collector-Source Voltage (VBS = VGS = 0 V)
Base-Source Voltage (IC= 0, VGS = 0 V)
Source-Base Voltage (IC= 0, VGS = 0 V)
Gate-Source Voltage
GS
Collector Current
C
Collector Peak Current (tp < 5ms)
Base Current
B
Base Peak Current (tp < 1ms)
Total Dissipation at TC = 25 oC
tot
Storage Temperature
Max. Operating Junction Temperature
J
Thermal Resistance Junction-Case Max 0.64
2200 V
30 V
9V
± 20 V
3A
6A
2A
4A
195 W
-65 to 150 °C
150 °C
o
C/W
Table 5: Electrical Characteristics (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CS(SS)
I
BS(OS)
I
SB(OS)
I
GS(OS)
V
CS(ON)
V
BS(ON)
V
Q
Collector-Source Current
(V
= VGS = 0 V)
BS
Base-Source Current
(I
= 0 , VGS = 0 V)
C
Source-Base Current
(I
= 0 , VGS = 0 V)
C
V
V
V
= 2200 V 100 µA
CS(SS)
= 30 V 10 µA
BS(OS)
= 9 V 100 µA
SB(OS)
Gate-Source Leakage VGS = ± 20 V 500 nA
Collector-Source ON
Voltage
DC Current Gain IC = 3 A VCS = 1 V V GS = 10 V
h
FE
Base-Source ON Voltage VGS = 10 V IC = 3 A IB = 0.3 A
Gate Threshold Voltage VBS = VGS IB = 250 µA 1.5 2.2 3 V
GS(th)
C
Input Capacitance VCS = 25 V f = 1MHZ
iss
Gate-Source Charge VCS = 15 V VGS = 10 V
GS(tot)
VGS = 10 V IC = 3 A IB = 0.3 A
V
= 10 V IC = 6 A IB = 1.2 A
GS
I
= 6 A VCS = 1 V VGS = 10 V
C
V
= 10 V IC = 6 A IB = 1.2 A
GS
V
= VCB = 0
GS
V
= 0 IC = 1.8 A
CB
1
0.6
10
5
0.9
1.2
750 pF
12.5 nC
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
TBD TBD ns
V
V
V
V
ns
2/6