ST STC03DE220HV User Manual

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR

Table 1: General Features

STC03DE220HV

ESBT

Figure 1: Package



2200 V - 3 A - 0.55 W

Preliminary Data

V

CS(ON)

1 V 3 A 0.55 W

n LOW EQUIVALENT ON RESISTANCE
n VERY FAST-SWITCH, UP TO 150 kHz
n VERY LOW C

I

C

DRIVEN BY RG = 4.7 W

ISS

R

CS(ON)

APPLICATION

n AUX SMPS FOR THREE PHASE MAINS

DESCRIPTION

The STC03DE220HV is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC03DE220HV is designed for use in aux
flyback smps for any three phase application.

4

3

2

1

TO247-4L HV

Figure 2: Internal Schematic Diagram

Electrical Symbol Device Structure

Table 2: Order Code

Part Number Marking Package Packaging

STC03DE220HV C03DE220HV TO247-4L HV TUBE

Rev. 1

1/6July 2005

STC03DE220HV

Table 3: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

CS(SS)

V

BS(OS)

V

SB(OS)

V

I

I

CM

I

I

BM

P

T

stg

T

Table 4: Thermal Data

Symbol Parameter Unit

R

thj-case

Collector-Source Voltage (VBS = VGS = 0 V)

Base-Source Voltage (IC= 0, VGS = 0 V)

Source-Base Voltage (IC= 0, VGS = 0 V)

Gate-Source Voltage

GS

Collector Current

C

Collector Peak Current (tp < 5ms)

Base Current

B

Base Peak Current (tp < 1ms)

Total Dissipation at TC = 25 oC

tot

Storage Temperature

Max. Operating Junction Temperature

J

Thermal Resistance Junction-Case Max 0.64

2200 V

30 V

9V

± 20 V

3A

6A

2A

4A

195 W

-65 to 150 °C

150 °C

o

C/W

Table 5: Electrical Characteristics (T

= 25 oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CS(SS)

I

BS(OS)

I

SB(OS)

I

GS(OS)

V

CS(ON)

V

BS(ON)

V

Q

Collector-Source Current
(V

= VGS = 0 V)

BS

Base-Source Current

(I

= 0 , VGS = 0 V)

C

Source-Base Current

(I

= 0 , VGS = 0 V)

C

V

V

V

= 2200 V 100 µA

CS(SS)

= 30 V 10 µA

BS(OS)

= 9 V 100 µA

SB(OS)

Gate-Source Leakage VGS = ± 20 V 500 nA

Collector-Source ON
Voltage

DC Current Gain IC = 3 A VCS = 1 V V GS = 10 V

h

FE

Base-Source ON Voltage VGS = 10 V IC = 3 A IB = 0.3 A

Gate Threshold Voltage VBS = VGS IB = 250 µA 1.5 2.2 3 V

GS(th)

C

Input Capacitance VCS = 25 V f = 1MHZ

iss

Gate-Source Charge VCS = 15 V VGS = 10 V

GS(tot)

VGS = 10 V IC = 3 A IB = 0.3 A

V

= 10 V IC = 6 A IB = 1.2 A

GS

I

= 6 A VCS = 1 V VGS = 10 V

C

V

= 10 V IC = 6 A IB = 1.2 A

GS

V

= VCB = 0

GS

V

= 0 IC = 1.8 A

CB

1

0.6

10

5

0.9

1.2

750 pF

12.5 nC

INDUCTIVE LOAD

t

s

t

f

Storage Time

Fall Time

TBD TBD ns

V

V

V

V

ns

2/6