The STBP120 device provides overvoltage protection for input voltage up to +28 V. Its low
R
failures of the DC power supplies in accordance with the China MII Communications
Standard YD/T 1591-2006.
In the event of an input overvoltage condition, the device immediately disconnects the DC
power supply by turning off an internal low R
to protected systems.
In addition, the device also monitors its own junction temperature and switches off the
internal MOSFET if the junction temperature exceeds the specified limit.
The device can be controlled by the microcontroller and can also provide status information
about fault conditions.
The STBP120 is offered in a small, RoHS-compliant TDFN – 10-lead (2.5 mm x 2 mm)
package.
Figure 1.Logic diagram
N-channel MOSFET switch protects the systems connected to the OUT pin against
DS(on)
N-channel MOSFET to prevent damage
DS(on)
Figure 2.Pinout
(1)
IN
1
2
3
4
5
STBP120
GND
PAD1
PAD2
10
9
8
7
6
EN
NC
GNDNC
FLT
INOUT
IN
EN
NC
OUT
OUT
OUT
FLT
AM00240
1. Pin 1, PAD1 and PAD2 are No Connect (NC) and may be tied to IN or GND.
6/36Doc ID 15492 Rev 5
AM00239
STBP120Pin descriptions
2 Pin descriptions
2.1 Input (IN)
Input voltage pin. This pin is connected to the DC power supply. External low ESR ceramic
capacitor of minimum value 1 µF must be connected between IN and GND. This capacitor is
for decoupling and also protects the IC against dangerous voltage spikes and ESD events.
This capacitor should be located as close to the IN pins as possible.
All IN pins (4, 5) must be hardwired to common supply.
2.2 Power output (OUT)
Output voltage pin. This pin is connected to the input through a low R
MOSFET switch.
If no fault is detected and the STBP120 is not disabled (controlled by the EN
switch is turned on and the output voltage follows the input voltage.
The output is disconnected from the input when the input voltage is under the UVLO
threshold or above the OVLO threshold, when the chip temperature is above the thermal
shutdown threshold or when the chip is disabled by the EN
There is a 50 ms delay, t
specified range and the power output is connected to the input (see Figure 6).
All OUT pins (6, 7) must be hardwired to common supply.
, between input voltage or junction temperature returns to
on
2.3 Fault indication output (FLT)
The fault indication output (active-low - open-drain) provides information on the STBP120
state to the application controller. When FLT
STBP120 is in the undervoltage or overvoltage condition or thermal shutdown mode is
active. When the input voltage and junction temperature is in specified range, the FLT
is in high impedance (Hi-Z) state.
There is an additional 50 ms delay, t
and the FLT
Since the FLT
the controller supply voltage. If there is no need to use this output, it may be left
disconnected. The suitable R
To improve safety and to prevent damage to application circuits in the event of extreme
voltage or current conditions, an optional protective resistor R
the FLT
to 100 kΩ
output is deactivated (i.e. in Hi-Z state) (see Figure 6).
output is of open-drain type, it may be pulled up by an external resistor RP to
resistor value is in range of 10 kΩ to 1 MΩ .
P
output and the controller input. The suitable R
.
, between the power output is connected to the input
start
N-channel
DS(on)
input), this
input.
is active (i.e. driven low), this indicates the
output
can be connected between
FLT
resistor value is in range of 22 kΩ
FLT
The function of the FLT
output is not affected by the EN input state (see Figure 9).
Doc ID 15492 Rev 57/36
Pin descriptionsSTBP120
2.4 Enable input (EN)
This logical input (active-low) can be used to enable or disable the device. When EN input is
driven high, the STBP120 enters the standby mode and the power output is disconnected
from the input. When EN
limits, the power output is connected to the input.
input is driven low and all operating conditions are within specified
Since the EN
input has no internal pull-down resistor, its logical level must be defined by the
controller or by an external resistor. If there is no need to use this input, it should be
connected to the GND.
To improve safety and to prevent damage to application circuits in the event of extreme
voltage or current conditions, an optional protective resistor R
the EN
100 kΩ
The EN
input and the controller output. The suitable resistor value is in range of 22 kΩ to
.
input level has no impact on the functionality of FLT output (see Figure 8 and
Figure 9).
2.5 No Connect (NC)
Pins 1, 8, 9 and exposed pads PAD1, PAD2 are No Connect. Pin 1 and exposed pads PAD1,
PAD2 may be tied to IN or GND if necessary.
2.6 Ground (GND)
Ground. All voltages are referenced to GND.
Table 1.Pin description and signal names
PinNameTypeFunction
can be connected between
EN
1, PAD1, PAD2NC—No Connect. May be tied to IN or GND.
2GNDSupplyGround
3FLT
4, 5INInput / supplyInput voltage
6, 7OUTOutputOutput voltage
8, 9NC—No Connect
10EN
8/36Doc ID 15492 Rev 5
OutputFault indication output (open-drain)
InputEnable input (no internal pull-down resistor)
STBP120Pin descriptions
Figure 3.Block diagram
IN
ESD
protection
Core
negative
protection
V
REF
Temperature
detector
SUPPLY
REGULATOR
V
VOLTAGE
REFERENCE
Input overvoltage
Input undervoltage
Thermal shutdown
Figure 4.Typical application circuit
CC
(1),(2)
OSCILLATOR
COUNTERS
CONTROL LOGIC
GND
CHARGE PUMP
MOSFET DRIVER
MCU
INTERFACE
protection
ESD
OUT
OFF
FLT
EN
ESD
protection
AM00306
PERIPHERAL
SYSTEM
AC
adapter
POWERED
PERIPHERALS
1. Optional resistors R
required. Low ESR ceramic capacitor C1 is necessary to ensure proper function of the STBP120. Capacitor C2 is not
CONNECTOR
, R
EN
FLT
OR
prevent damage to the controller under extreme voltage or current conditions and are not
SUPPLY CURRENT
CHARGING CURRENT
INOUT
C1
1 µF
STBP120
FLT
EN
GND
C2
1 µF
CHARGER
R
FLT
R
EN
DC-DC
EN
IC
ENABLE
BATTERY
PA CK
R
SUPPLY
CIRCUITS
PU
CONTROLLER
APPLICATION
AM00314a
necessary for STBP120 but may be required by the charger IC.
2. The STBP120 MOSFET switch topology allows the current to also flow in the reverse direction, from OUT to IN, which can
be useful for powering external peripherals from the system connector. The charger IC should not contain the reverse
diode to prevent the battery pack voltage from appearing on the system connector. If the reverse current (supply current) is
undesirable, it may be prevented by connecting a Schottky diode in series with the OUT pin. The voltage drop between IN
and charger is increased by the voltage drop across the diode.
Doc ID 15492 Rev 59/36
OperationSTBP120
3 Operation
The STBP120 provides overvoltage protection for positive input voltage up to 28 V using
a built-in low R
3.1 Power-up
At power-up, with EN = low, the MOSFET switch is turned on after a 50 ms delay, ton, after
the input voltage exceeds the UVLO threshold to ensure the input voltage is stabilized. After
an additional 50 ms delay, t
The FLT
output state is valid for VIN input voltage 1.2 V or higher.
3.2 Normal operation
The device continuously monitors the input voltage and its own internal temperature so the
output voltage is kept within the specified range. Internal MOSFET switch is turned on and
the FLT
The STBP120 enters normal operation state if the input voltage returns to the interval
between V
T
conditions have stabilized. Then, after an additional 50 ms delay, t
deactivated (i.e. driven high). This behavior is equivalent to the startup shown on Figure 6.
output is not active.
UVLO
HYS(OFF)
. Internal MOSFET is turned on after the 50 ms delay ton to ensure that the
N-channel MOSFET switch.
DS(on)
, the FLT indication output is deactivated (see Figure 6).
start
and V
OVLO
- V
HYS(OVLO)
and the junction temperature falls below T
, the FLT output is
start
OFF
-
Note:The STBP120 MOSFET switch topology allows the current to also flow in the reverse
direction, i.e. from OUT to IN, which can be useful e.g. for powering external peripherals
from the system connector (see the supply current in Figure 4). At first, the current flows
through the MOSFET body diode. If the voltage that appears on the IN terminal is above the
UVLO threshold, the MOSFET is (after the 50 ms startup delay) turned on so the voltage
drop across STBP120 is significantly reduced. The charger IC should not contain the
reverse diode to prevent the battery pack voltage from appearing on the system connector.
If the reverse current is undesirable, it may be prevented by connecting a properly rated low
drop Schottky diode in series with the OUT pin. The voltage drop between IN and charger is
increased by the voltage drop across the diode.
Due to the MOSFET body diode, thermal shutdown protection is not functional for the
supply current.
3.3 Undervoltage lockout (UVLO)
To ensure proper operation under any conditions, the STBP120 has an undervoltage lockout
(UVLO) threshold. For rising input voltage, the output remains disconnected from input until
V
voltage exceeds the V
IN
as V
is below the UVLO threshold (assuming the input voltage is above 1.2 V). For falling
IN
input voltage, the UVLO circuit has a 50 mV hysteresis, V
immunity under transient conditions.
threshold (3.25 V typ). The FLT output is driven low as long
UVLO
HYS(UVLO)
, to improve noise
10/36Doc ID 15492 Rev 5
STBP120Operation
3.4 Overvoltage lockout (OVLO)
If the input voltage VIN rises above the threshold level V
immediately turned off (see Figure 7). At the same time, the fault indication output FLT
activated (i.e. driven low). This device is equipped with hysteresis, V
noise immunity under transient conditions.
For available OVLO thresholds and hystereses, please see the Ta b l e 5 .
3.5 Thermal shutdown
If the STBP120 internal junction temperature exceeds the T
switch is turned off and the fault indication output FLT
To improve thermal stability, this circuit has a 20 °C hysteresis, T
, the MOSFET switch is
OVLO
threshold, internal MOSFET
OFF
is driven low.
HYS(OFF)
HYS(OVLO)
.
is
, to improve
Doc ID 15492 Rev 511/36
Application informationSTBP120
4 Application information
4.1 Calculating the power dissipation
The maximum power dissipation of the STBP120 internal power MOSFET can be calculated
using following formula:
= I2 x R
P
D
DS(on)(max)
,
Where I is current flowing through the MOSFET and R
MOSFET resistance.
Example:
= 5 Ω, VIN = 5 V, R
R
load
/ (R
I = V
IN
DS(on)(max)
= 0.972 x 0.15 = 0.14 W
P
D
DS(on)(max)
+ R
load
= 150 mΩ
) = 5 / (5 + 0.150) = 0.97 A
The power dissipation of reverse diode (in powering peripherals mode) can be estimated as
P
= (V
D
- VIN) x I ≈ 0.7 x I.
OUT
4.2 Calculating the junction temperature
The maximum junction temperature for given power dissipation, ambient temperature and
thermal resistance junction - to - ambient can be calculated as
= TA + 1.15 x PD x R
T
J
where T
and R
is junction temperature, TA is given ambient temperature, 1.15 is a derating factor
J
is thermal resistance junction - to - ambient, depending on shape, dimension and
thJA
design of PCB. Two examples of PCB with appropriate thermal resistance are listed in
Ta bl e 3 . The junction temperature may not exceed 125 °C (see Table 4), due to T
(thermal shutdown threshold temperature).
= TA + 1.15 x I2 x R
thJA
DS(on)(max)
DS(on)(max)
x R
thJA
is maximum value of
,
OFF
Maximum allowed MOSFET current for ambient temperature T
values are listed in Figure 5.
Example: For conditions listed in previous example, well designed PCB (R
and T
= 85 °C, the maximum junction temperature is
A
85 + 1.15 x 0.14 x 82 = 98.2 °C.
4.3 PCB layout recommendations
●This device is intended as a protection device to the application from overvoltage.
It must be ensured that the clearances between PCB tracks satisfy the high voltage
design rules.
●Input capacitor, C1, should be located as close as possible to the STBP120 device.
It should be a Low-ESR ceramic capacitor. Also the protective resistors R
(if used) should be located close to the STBP120.
●For good thermal performance, it is recommended to connect the STBP120 exposed
thermal pads with the PCB ground plane. In most designs, this requires thermal vias
between the copper pads on PCB and the ground plane.
12/36Doc ID 15492 Rev 5
= 85 °C and various R
A
= 82 °C/W)
thJA
, REN
FLT
thJA
STBP120Maximum rating
5 Maximum rating
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 2.Absolute maximum ratings
SymbolParameterValueUnit
T
STG
T
SLD
(2)
T
J
T
A
V
IN
V
IO(OUT)
V
IO
I
,
IN
I
OUT(MOSFET)
I
(FLT)
V
ESD
1. Reflow at peak temperature of 260 °C. The time above 255 °C must not exceed 30 seconds.
2. Maximum junction temperature is internally limited by the thermal shutdown circuit (not valid for reverse
current, see Chapter 3.2).
3. System-level value (see Figure 4, C1 ≥ 1 µF low ESR ceramic capacitor).
4. Human body model, 100 pF discharged through a 1.5kΩ resistor according the JESD22/A114
specification.
5. Machine model, 200 pF discharged through all pins according the JES D22/A115 specification.
Storage temperature (VIN off)–55 to 150 C
(1)
Lead solder temperature for 10 seconds260 C
Operating junction temperature range–40 to 150 C
Operating ambient temperature range–40 to 85 C
Input voltage (pins IN)–0.3 to 30V
Input / output voltage (pins OUT)–0.3 to 12V
Input / output voltage (other pins)–0.3 to 7V
Input / output current through MOSFET (pins IN, OUT)2000mA
Output current (pin FLT )15mA
ESD withstand voltage (IEC 61000-4-2, pins IN only)
Human body model (HBM), Model = 2
Machine model (MM), Model = B
(4)
(5)
(3)
±15 (air),
±8 (contact)
2000V
200V
kV
Doc ID 15492 Rev 513/36
Maximum ratingSTBP120
.
Table 3.Thermal data
SymbolParameterValueUnit
(1)
R
thJA
Thermal resistance (junction to ambient)
204
82
(2)
°C/W
R
thJC
1. The package is mounted on a 2-layers (1S) JEDEC board as per JESD51-7 without thermal vias
underneath the exposed pads.
2. The package is mounted on a 4-layers (2S2P) JEDEC board as per JESD51-7 with 2 thermal vias (one
underneath each exposed pad) as per JESD-51-5. Thermal vias connected from exposed pad to 1'st
buried copper plane of PCB.
Thermal resistance (junction to case)43°C/W
Figure 5.Maximum MOSFET current at TA = 85 °C for various PCB thermal
I
(MOSFET)
[A]
performance and T
2.10
1.90
1.70
1.50
1.30
1.10
0.90
0.70
50100150200250300350
= 125 °C
J
R
thJA
[˚C/W]
AM00428b
14/36Doc ID 15492 Rev 5
STBP120DC and AC parameters
6 DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow are derived from tests performed under the measurement conditions summarized in
Ta bl e 4 . Designers should check that the operating conditions in their circuit match the
operating conditions when relying on the quoted parameters.
Table 4.Operating and AC measurement conditions
ParameterValueUnit
Input voltage (V
Ambient operating temperature (T
Junction operating temperature (T
Output load resistance (R
Table 5.DC and AC characteristics
)5V
IN
)–40 to 85°C
A
) –40 to 125 °C
J
)5Ω
load
SymbolDescriptionTest condition
V
IN
V
UVLO
V
HYS(UVLO)
V
OVL O
V
HYS(OVLO)
R
DS(on)
I
CC
I
CC(STDBY)
I
CC(UVLO)
V
OL(FLT)
I
L(FLT)
V
IL(EN)
V
IH(EN)
I
L(EN)
Input voltage range1.228V
Input undervoltage
lockout threshold
Undervoltage lockout
hysteresis
V
rises up OVLO threshold, OVLO option A 5.25 5.375 5.50
IN
rises up OVLO threshold, OVLO option B5.30 5.50 5.70
V
Overvoltage lockout
threshold
IN
rises up OVLO threshold, OVLO option C5.71 5.90 6.10
V
IN
rises up OVLO threshold, OVLO option D5.70 6.02 6.40
V
IN
Input overvoltage
hysteresis
IN to OUT resistanceEN = 0 V, V
= 5 V, R
IN
Operating currentEN = 0 V, no load on OUT, VIN = 5 V170250µA
Standby currentEN = 5 V, no load on OUT, VIN = 5 V96150µA
UVLO operating current VIN = 2.9 V70100µA
FLT output low level
voltage
FLT output leakage
current
1.2 V < V
< V
IN
UVLO
> V
V
IN
OVLO
V
, I
(FLT)
SINK(FLT)
EN low level input
voltage
EN high level input
voltage
EN input leakage
current
V
= 0 V or 5 V5nA
(EN)
(1)
MinTypMax Unit
3.13.253.4V
2050100mV
V
306090mV
connected to OUT 90150mΩ
load
, I
SINK(FLT)
= 50 µA20400mV
= 1 mA400mV
= 5 V5nA
0.4V
1.2V
Doc ID 15492 Rev 515/36
DC and AC parametersSTBP120
Table 5.DC and AC characteristics (continued)
SymbolDescriptionTest condition
Timing parameters
Time measured from V
to V
= 0.3 V (see Figure 6)
OUT
Time measured from V
to V
V
increasing from 5.0 V to 8.0 V at 3.0 V/µs,
IN
R
load
V
increasing from 5.0 V to 8.0 V at 3.0 V/µs,
IN
R
load
= 1.2 V (see Figure 6)
(FLT)
IN
connected to OUT. (see Figure 7)
IN
connected to OUT. (see Figure 7)
Time measured from V
to V
< 0.3 V. R
OUT
load
t
t
stop
t
t
t
start
off
dis
on
(2)
(2)
(2)
Startup delay
FLT indication delay
(OK)
Output turn-off time
FLT indication delay
(FAULT)
Disable time
Time measured from V
Time measured from V
(see Figure 8)
Thermal shutdown
T
OFF
T
HYS(OFF)
Thermal shutdown
threshold temperature
Thermal shutdown
hysteresis
(1)
> V
> V
IN
OUT
OVL O
OVLO
(EN)
> V
to V
to V
≥
UVLO
= 0.3 V
OUT
(FLT)
1.2 V
connected to OUT.
MinTypMax Unit
305070ms
305070ms
≤ 0.3 V.
1.55µs
≤ 0.4 V.
1µs
15µs
130145°C
20°C
1. Test conditions described in Table 4 (except where noted).
2. Guaranteed by design. Not tested in production.
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Figure 26. TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm,
package mechanical drawing
INDE X AREA
0.10 C
0.10 C
A
0.08 C
LEADS CO PLA NARIT Y
D
2x
0.10 C 2x
TOP VIEW
SIDE VIE W
D2 -2
e
A1
A
B
SEATING
PLANE
E
C
1
PI N#1 ID
IND EX AR EA
0.10C A B
(x10)
0.195
L
b (x 10)
10
0.0 2 5
0.350
BOTTOM VI EW
28/36Doc ID 15492 Rev 5
5
K (x10)
E2
0.195
D2- 1
10L_ME
STBP120Package mechanical data
Table 6.TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm,
Document reformatted, updated overvoltage threshold option C in
Ta b le 5 , Ta b l e 1 0 and Ta b le 11 .
Doc ID 15492 Rev 535/36
STBP120
y
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