The STBP120 device provides overvoltage protection for input voltage up to +28 V. Its low
R
failures of the DC power supplies in accordance with the China MII Communications
Standard YD/T 1591-2006.
In the event of an input overvoltage condition, the device immediately disconnects the DC
power supply by turning off an internal low R
to protected systems.
In addition, the device also monitors its own junction temperature and switches off the
internal MOSFET if the junction temperature exceeds the specified limit.
The device can be controlled by the microcontroller and can also provide status information
about fault conditions.
The STBP120 is offered in a small, RoHS-compliant TDFN – 10-lead (2.5 mm x 2 mm)
package.
Figure 1.Logic diagram
N-channel MOSFET switch protects the systems connected to the OUT pin against
DS(on)
N-channel MOSFET to prevent damage
DS(on)
Figure 2.Pinout
(1)
IN
1
2
3
4
5
STBP120
GND
PAD1
PAD2
10
9
8
7
6
EN
NC
GNDNC
FLT
INOUT
IN
EN
NC
OUT
OUT
OUT
FLT
AM00240
1. Pin 1, PAD1 and PAD2 are No Connect (NC) and may be tied to IN or GND.
6/36Doc ID 15492 Rev 5
AM00239
STBP120Pin descriptions
2 Pin descriptions
2.1 Input (IN)
Input voltage pin. This pin is connected to the DC power supply. External low ESR ceramic
capacitor of minimum value 1 µF must be connected between IN and GND. This capacitor is
for decoupling and also protects the IC against dangerous voltage spikes and ESD events.
This capacitor should be located as close to the IN pins as possible.
All IN pins (4, 5) must be hardwired to common supply.
2.2 Power output (OUT)
Output voltage pin. This pin is connected to the input through a low R
MOSFET switch.
If no fault is detected and the STBP120 is not disabled (controlled by the EN
switch is turned on and the output voltage follows the input voltage.
The output is disconnected from the input when the input voltage is under the UVLO
threshold or above the OVLO threshold, when the chip temperature is above the thermal
shutdown threshold or when the chip is disabled by the EN
There is a 50 ms delay, t
specified range and the power output is connected to the input (see Figure 6).
All OUT pins (6, 7) must be hardwired to common supply.
, between input voltage or junction temperature returns to
on
2.3 Fault indication output (FLT)
The fault indication output (active-low - open-drain) provides information on the STBP120
state to the application controller. When FLT
STBP120 is in the undervoltage or overvoltage condition or thermal shutdown mode is
active. When the input voltage and junction temperature is in specified range, the FLT
is in high impedance (Hi-Z) state.
There is an additional 50 ms delay, t
and the FLT
Since the FLT
the controller supply voltage. If there is no need to use this output, it may be left
disconnected. The suitable R
To improve safety and to prevent damage to application circuits in the event of extreme
voltage or current conditions, an optional protective resistor R
the FLT
to 100 kΩ
output is deactivated (i.e. in Hi-Z state) (see Figure 6).
output is of open-drain type, it may be pulled up by an external resistor RP to
resistor value is in range of 10 kΩ to 1 MΩ .
P
output and the controller input. The suitable R
.
, between the power output is connected to the input
start
N-channel
DS(on)
input), this
input.
is active (i.e. driven low), this indicates the
output
can be connected between
FLT
resistor value is in range of 22 kΩ
FLT
The function of the FLT
output is not affected by the EN input state (see Figure 9).
Doc ID 15492 Rev 57/36
Pin descriptionsSTBP120
2.4 Enable input (EN)
This logical input (active-low) can be used to enable or disable the device. When EN input is
driven high, the STBP120 enters the standby mode and the power output is disconnected
from the input. When EN
limits, the power output is connected to the input.
input is driven low and all operating conditions are within specified
Since the EN
input has no internal pull-down resistor, its logical level must be defined by the
controller or by an external resistor. If there is no need to use this input, it should be
connected to the GND.
To improve safety and to prevent damage to application circuits in the event of extreme
voltage or current conditions, an optional protective resistor R
the EN
100 kΩ
The EN
input and the controller output. The suitable resistor value is in range of 22 kΩ to
.
input level has no impact on the functionality of FLT output (see Figure 8 and
Figure 9).
2.5 No Connect (NC)
Pins 1, 8, 9 and exposed pads PAD1, PAD2 are No Connect. Pin 1 and exposed pads PAD1,
PAD2 may be tied to IN or GND if necessary.
2.6 Ground (GND)
Ground. All voltages are referenced to GND.
Table 1.Pin description and signal names
PinNameTypeFunction
can be connected between
EN
1, PAD1, PAD2NC—No Connect. May be tied to IN or GND.
2GNDSupplyGround
3FLT
4, 5INInput / supplyInput voltage
6, 7OUTOutputOutput voltage
8, 9NC—No Connect
10EN
8/36Doc ID 15492 Rev 5
OutputFault indication output (open-drain)
InputEnable input (no internal pull-down resistor)
STBP120Pin descriptions
Figure 3.Block diagram
IN
ESD
protection
Core
negative
protection
V
REF
Temperature
detector
SUPPLY
REGULATOR
V
VOLTAGE
REFERENCE
Input overvoltage
Input undervoltage
Thermal shutdown
Figure 4.Typical application circuit
CC
(1),(2)
OSCILLATOR
COUNTERS
CONTROL LOGIC
GND
CHARGE PUMP
MOSFET DRIVER
MCU
INTERFACE
protection
ESD
OUT
OFF
FLT
EN
ESD
protection
AM00306
PERIPHERAL
SYSTEM
AC
adapter
POWERED
PERIPHERALS
1. Optional resistors R
required. Low ESR ceramic capacitor C1 is necessary to ensure proper function of the STBP120. Capacitor C2 is not
CONNECTOR
, R
EN
FLT
OR
prevent damage to the controller under extreme voltage or current conditions and are not
SUPPLY CURRENT
CHARGING CURRENT
INOUT
C1
1 µF
STBP120
FLT
EN
GND
C2
1 µF
CHARGER
R
FLT
R
EN
DC-DC
EN
IC
ENABLE
BATTERY
PA CK
R
SUPPLY
CIRCUITS
PU
CONTROLLER
APPLICATION
AM00314a
necessary for STBP120 but may be required by the charger IC.
2. The STBP120 MOSFET switch topology allows the current to also flow in the reverse direction, from OUT to IN, which can
be useful for powering external peripherals from the system connector. The charger IC should not contain the reverse
diode to prevent the battery pack voltage from appearing on the system connector. If the reverse current (supply current) is
undesirable, it may be prevented by connecting a Schottky diode in series with the OUT pin. The voltage drop between IN
and charger is increased by the voltage drop across the diode.
Doc ID 15492 Rev 59/36
OperationSTBP120
3 Operation
The STBP120 provides overvoltage protection for positive input voltage up to 28 V using
a built-in low R
3.1 Power-up
At power-up, with EN = low, the MOSFET switch is turned on after a 50 ms delay, ton, after
the input voltage exceeds the UVLO threshold to ensure the input voltage is stabilized. After
an additional 50 ms delay, t
The FLT
output state is valid for VIN input voltage 1.2 V or higher.
3.2 Normal operation
The device continuously monitors the input voltage and its own internal temperature so the
output voltage is kept within the specified range. Internal MOSFET switch is turned on and
the FLT
The STBP120 enters normal operation state if the input voltage returns to the interval
between V
T
conditions have stabilized. Then, after an additional 50 ms delay, t
deactivated (i.e. driven high). This behavior is equivalent to the startup shown on Figure 6.
output is not active.
UVLO
HYS(OFF)
. Internal MOSFET is turned on after the 50 ms delay ton to ensure that the
N-channel MOSFET switch.
DS(on)
, the FLT indication output is deactivated (see Figure 6).
start
and V
OVLO
- V
HYS(OVLO)
and the junction temperature falls below T
, the FLT output is
start
OFF
-
Note:The STBP120 MOSFET switch topology allows the current to also flow in the reverse
direction, i.e. from OUT to IN, which can be useful e.g. for powering external peripherals
from the system connector (see the supply current in Figure 4). At first, the current flows
through the MOSFET body diode. If the voltage that appears on the IN terminal is above the
UVLO threshold, the MOSFET is (after the 50 ms startup delay) turned on so the voltage
drop across STBP120 is significantly reduced. The charger IC should not contain the
reverse diode to prevent the battery pack voltage from appearing on the system connector.
If the reverse current is undesirable, it may be prevented by connecting a properly rated low
drop Schottky diode in series with the OUT pin. The voltage drop between IN and charger is
increased by the voltage drop across the diode.
Due to the MOSFET body diode, thermal shutdown protection is not functional for the
supply current.
3.3 Undervoltage lockout (UVLO)
To ensure proper operation under any conditions, the STBP120 has an undervoltage lockout
(UVLO) threshold. For rising input voltage, the output remains disconnected from input until
V
voltage exceeds the V
IN
as V
is below the UVLO threshold (assuming the input voltage is above 1.2 V). For falling
IN
input voltage, the UVLO circuit has a 50 mV hysteresis, V
immunity under transient conditions.
threshold (3.25 V typ). The FLT output is driven low as long
UVLO
HYS(UVLO)
, to improve noise
10/36Doc ID 15492 Rev 5
STBP120Operation
3.4 Overvoltage lockout (OVLO)
If the input voltage VIN rises above the threshold level V
immediately turned off (see Figure 7). At the same time, the fault indication output FLT
activated (i.e. driven low). This device is equipped with hysteresis, V
noise immunity under transient conditions.
For available OVLO thresholds and hystereses, please see the Ta b l e 5 .
3.5 Thermal shutdown
If the STBP120 internal junction temperature exceeds the T
switch is turned off and the fault indication output FLT
To improve thermal stability, this circuit has a 20 °C hysteresis, T
, the MOSFET switch is
OVLO
threshold, internal MOSFET
OFF
is driven low.
HYS(OFF)
HYS(OVLO)
.
is
, to improve
Doc ID 15492 Rev 511/36
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