ST STP9NK60ZD, STF9NK60ZD, STB9NK60ZD User Manual
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N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK
STP9NK60ZD - STF9NK60ZD
STB9NK60ZD
SuperFREDMesh™ M OSF ET
ADVANCED DATA
TYPE V
STP9NK60ZD
STF9NK60ZD
STB9NK60ZD
■ TYPICAL R
■ VERY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ LOW INTRINSICCAPACITANCES
■ FAST INTERNAL RECOVERY DIODE
600 V
600 V
600 V
(on) = 0.85 Ω
DS
DSS
R
DS(on)
<0.95Ω
<0.95Ω
<0.95Ω
I
D
7A
7A
7A
Pw
125 W
30 W
125 W
DESCRIPTION
The SuperFRED Mesh™ se ries associates all advantages of reduced on-resistance, zener gate protection and very high d v/dt capability with a Fast
body-drain reco ve ry diode. Such series com plements the “FDmesh™” Advanced Technology.
APPLICATIONS
■ HID BALLAST
■ ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS
TO-220 TO-220FP
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP9NK60ZD P9NK60ZD TO-220 TUBE
STF9NK60ZD F9NK60ZD TO-220FP TUBE
STB9NK60ZDT4 B9NK60ZD
January 2004
2
PAK
D
TAPE & REEL
1/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 / D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)600V
Gate- source Voltage ± 30 V
Drain Current (continuos) at TC=25°C77(*)A
Drain Current (continuos) at TC=100°C4.34.3(*)A
()
Drain Current (pulsed) 28 28 (*) A
Total Dissipation at TC=25°C
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Derating Factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD (HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤7A, di/dt ≤500A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj
=25°C
2
PAK TO-220FP
600 V
125 30 W
4000 V
- 2500 V
-55 to 150 °C
THERMAL DATA
TO-220
2
D
PAK
Rthj-pcb Thermal Resistance Junction-pcb Max
(Whenmounted on minimum Footprint)
30 °C/W
Rthj-case Thermal Resistance Junction-case Max 1 4.16 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering
300 °C
Purpose
TO-220FP Unit
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C, ID=IAR,VDD=50V)
j
7A
235 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have spec ifically been designed to enhance not only the device’s
ESD capability, but also to make them s afely absorb possibl e voltage transients that may occasionally be
applied from gate tosouce. In this respect the Zener voltageis appropriate to achieve an efficient andcosteffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS=0 600 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
=MaxRating
DS
= Max Rating, TC=125°C
V
DS
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
2.5 3.5 4.5 V
1
50
VGS= 10V, ID= 3.5 A 0.85 0.95 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=15V,ID=3.5A 5.3 S
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(3)
Equivalent Output Capacitance
VDS=25V,f=1MHz,VGS=0 1110
135
30
VGS=0V,VDS= 0V to 480V 72 pF
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 300 V, ID=3.5A
RG=4.7Ω VGS=10V
(Resistive Load see, Figure 3)
= 480V, ID=7A,
V
DD
V
= 10V
GS
22
17
41
8.7
21
53
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
FallTime
VDD= 300 V, ID=3.5A
R
=4.7Ω VGS=10V
G
42
15
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
FallTime
Cross-over Time
= 480V, ID=7A,
V
DD
R
=4.7Ω, VGS= 10V
G
(Inductive Load see, Figure 5)
11
8
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe o perating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
(1)
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=7A,VGS=0
= 7 A, di/dt = 100A/µs
I
SD
V
= 30V, Tj=25°C
DD
(see test circuit, Figure 5)
= 7 A, di/dt = 100A/µs
I
SD
VDD= 30V, Tj=150°C
(see test circuit, Figure 5)
150
663
8.5
194
935
9.6
when VDSincreases from 0 to 80%
oss
7
28
1.6 V
ns
ns
ns
ns
ns
A
A
ns
nC
A
ns
nC
A
3/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK
Thermal Impedance For TO-220/D²P A K Thermal Impedance Fo r TO-220FP
Output Characteristics
4/12
Transfer Characteristics
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