ST STB80NF55-06, STB80NF55-06-1, STP80NF55-06, STP80NF55-06FP User Manual

STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP

N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/I²PAK/D²PAK

STripFET™ II POWER MOSFET

TYPE	VDSS	RDS(on)	ID
STB80NF55-06/-1	55 V	<0.0065 Ω	80 A
STP80NF55-06	55 V	<0.0065 Ω	80 A
STP80NF55-06FP	55 V	<0.0065 Ω	60 A

■TYPICAL RDS(on) = 0.005 Ω

■EXCEPTIONAL dv/dt CAPABILITY

■100% AVALANCHE TESTED

■APPLICATION ORIENTED CHARACTERIZATION

■SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■HIGH-EFFICIENCY DC-DC CONVERTERS

■UPS AND MOTOR CONTROL

■DC-DC CONVERTERS

■AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

TO-220FP
3	TO-220	3
2		2
1		1

3

	1
1	2 3
I²PAK	D²PAK
TO-262	TO-263

(Suffix “-1”)	(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter		Value				Unit
		STB80NF55-06/-1			STP80NF55-06FP
		STP80NF55-06
VDS	Drain-source Voltage (VGS = 0)			55			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)			55			V
VGS	Gatesource Voltage			± 20			V
ID	Drain Current (continuous) at TC = 25°C	80				60	A
ID	Drain Current (continuous) at TC = 100°C	80				42	A
IDM(•)	Drain Current (pulsed)	320				240	A
Ptot	Total Dissipation at TC = 25°C	300				45	W
	Derating Factor	2				0.30	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope			7			V/ns
EAS (2)	Single Pulse Avalanche Energy			1.3			J
VISO	Insulation Withstand Voltage (DC)	------				2500	V
Tstg	Storage Temperature	-55 to 175					°C
Tj	Operating Junction Temperature
(•) Pulse width	limited by safe operating area.	(1) ISD ≤80A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
		(2) Starting Tj = 25 oC, ID = 40A, VDD= 35V
February 2004							1/12

NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55-06 @ B80NF55-06 @ P80NF55-06 @

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

THERMAL DATA

			D2PAK/I2PAK/	TO-220FP
			TO-220
Rthj-case	Thermal Resistance Junction-case	Max	0.5	3.33	°C/W
Rthj-amb	Thermal Resistance Junction-ambient	Max	62.5		°C/W
Tl	Maximum Lead Temperature For Soldering Purpose		300		°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	55			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating TC = 125°C			10	µA
IGSS	Gate-body Leakage	VGS = ± 20 V			±100	nA
	Current (VDS = 0)

ON (*)

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 µA		2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10 V	ID = 40	A		0.005	0.0065	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs (*)	Forward Transconductance	VDS = 15 V	ID = 40 A		150		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0			4400		pF
Coss	Output Capacitance				1020		pF
Crss	Reverse Transfer				350		pF
	Capacitance

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STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 27 V	ID = 40	A		27		ns
tr	Rise Time	RG = 4.7 Ω	VGS = 10	V		155		ns
		(Resistive Load, Figure 3)
Qg	Total Gate Charge	VDD= 44 V ID= 80 A VGS= 10V				142	193	nC
Qgs	Gate-Source Charge					29		nC
Qgd	Gate-Drain Charge					60.5		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 27 V	ID = 40 A		125		ns
tf	Fall Time	RG = 4.7Ω,	VGS = 10 V		65		ns
		(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					80	A
ISDM (•)	Source-drain Current (pulsed)					320	A
VSD (*)	Forward On Voltage	ISD = 80 A	VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 80 A	di/dt = 100A/µs		100		ns
Qrr	Reverse Recovery Charge	VDD = 35 V	Tj = 150°C		0.32		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			6.5		A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area.

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

Thermal Impedance

Thermal Impedance for TO-220FP

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

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