ST STB75NF75, STP75NF75, STP75NF75FP User Manual
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N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D2PA K
General features
Type V
STB75NF75 75V <0.011Ω 80A
STP75NF75 75V <0.011Ω 80A
STP75NF75FP 75V <0.011Ω 80A
1. Current limited by package
■ Exceptional dv/dt capability
■ 100% avalanche tested
DSS
Description
R
DS(on)
I
STB75NF75
STP75NF75 - STP75NF75FP
STripFET™ II Power MOSFET
D
(1)
(1)
(1)
3
2
1
TO-220 TO-220FP
3
1
D²PAK
3
2
1
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
■ Switching application
Order codes
Internal schematic diagram
Part number Marking Package Packaging
STB75NF75T4 B75NF75 D²PAK Tape & reel
STP75NF75 P75NF75 TO-220 Tube
STP75NF75FP P75NF75 TO-220FP Tube
February 2007 Rev 8 1/16
www.st.com
16
Contents STB75NF75 - STP75NF75 - STP75NF75FP
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STB75NF75 - STP75NF75 - STP75NF75FP Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Val ue
Symbol Parameter
2
PAK /TO-220 TO-220FP
D
Unit
V
I
V
V
I
I
DM
P
Drain-source voltage (VGS = 0) 75 V
DS
Drain-gate voltage (RGS = 20KΩ)75V
DGR
Gate-source voltage ± 20 V
GS
(1)
Drain current (continuous) at TC = 25°C 80 80 A
D
(1)
Drain current (continuous) at TC=100°C 70
D
(2)
Drain current (pulsed) 320
Total dissipation at TC = 25°C 300 45 W
TOT
Derating factor 2.0 0.3 W/°C
(3)
dv/dt
E
V
T
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 80A, di/dt ≤ 300A/µs, VDD ≤ V
4. Starting TJ = 25 oC, ID = 40A, VDD = 37.5V
Peak diode recovery voltage slope 12 V/ns
(4)
Single pulse avalanche energy 700 mJ
AS
Insulation withstand voltage (RMS) from all
ISO
three leads to external heat sink (t=1s;T
T
Operating junction temperature
J
Storage temperature
stg
, Tj ≤ T
(BR)DSS
JMAX
=25°C)
C
70
320
-- 2000 V
-55 to 175 °C
A
A
Table 2. Thermal data
Symbol Parameter
R
thJC
R
thJA
T
1. 1.6mm from case for 10sec)
Thermal resistance junction-case max 0.5 3.33 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
Maximum lead temperature for soldering
l
purpose
(1)
Value
2
PAK /TO-220 TO-220FP
D
300 °C
Unit
3/16
Electrical characteristics STB75NF75 - STP75NF75 - STP75NF75FP
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125°C
DS
= ±20V
V
GS
= VGS, ID = 250µA
V
DS
VGS= 10V, ID= 40A
75 V
1
10
±100 nA
23 4V
0.0095 0.011 Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
V
= 15V, ID = 40A
DS
=25V, f = 1 MHz,
V
DS
V
= 0
GS
VDD = 60V, ID = 80A
=10V
V
GS
20 S
3700
730
240
117
160
27
47
µA
µA
pF
pF
pF
nC
nC
nC
4/16
STB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
= 37.5V, ID= 45A,
V
DD
=4.7Ω, VGS=10V
R
G
Figure 15 on page 9
25
100
66
30
ns
ns
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 80 A
(1)
Source-drain current (pulsed) 320 A
(2)
Forward on voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
I
I
SD
SD
= 80A, V
= 80A,
GS
= 0
di/dt = 100A/µs,
= 25V, TJ = 150°C
V
DD
Figure 17 on page 9
132
660
10
1.5 V
ns
nC
A
5/16
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