ST STP4NK60Z, STP4NK60ZFP, STB4NK60Z, STB4NK60Z-1, STD4NK60Z User Manual

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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1

N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

STB4NK60Z-STD4NK60Z-STD4NK60Z-1

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP4NK60Z
STP4NK60ZFP
STB4NK60Z
STB4NK60Z-1
STD4NK60Z
STD4NK60Z-1

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSICCAPACITANCES

■ VERY GOOD MANUFACTURING

600 V
600 V
600 V
600 V
600 V
600 V

(on) = 1.76 Ω

DS

DSS

R

DS(on)

<2Ω
<2Ω
<2Ω
<2 Ω
<2Ω
<2Ω

I

D

4A
4A
4A
4A
4A
4A

Pw

70 W
25 W
70 W
70 W
70 W
70 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most demanding app lications. Such series comple­ments S T full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

3

1

D2PAK

TO-220

DPAK

3

1

2

1

I2PAK

TO-220FP

3

INTERNAL SCHEMATIC DIAGRAM

IPAK

3

2

1

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP4NK60Z P4NK60Z TO-220 TUBE

STP4NK60ZFP P4NK60ZFP TO-220FP TUBE
STB4NK60ZT4 B4NK60Z

STB4NK60Z-1 B4NK60Z

STD4NK60ZT4 D4NK60Z DPAK TAPE & REEL

STD4NK60Z-1 D4NK60Z IPAK TUBE

2

PAK

D

I2PAK

TAPE & REEL

TUBE

1/16March 2003

STP4NK60Z,STP4NK60ZFP,STB 4N K60Z,STB4NK60Z-1,STD4NK60Z,STD4N K 60Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP4NK60Z

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

STB4NK60Z

STB4NK60Z-1

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 16 16 (*) 16 A
Total Dissipation at TC= 25°C

4 4 (*) 4 A

2.5 2.5 (*) 2.5 A

70 25 70 W

STP4NK60ZFP

600 V
600 V

Derating Factor 0.56 0.2 0.56 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤4A, di/dt ≤200A/µs, VDD≤ V

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55 to 150

-55 to 150

STD4NK60Z

STD4NK60Z-1

°C
°C

THERMAL DATA

TO-220

D

2

I

2

PAK

PAK

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

DPAK

IPAK

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

4A

120 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 30 V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achie ve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener d iodes thus avoid t he
usage of external components.

2/16

STP4NK60Z,STP4NK60ZFP,STB 4N K60Z,STB4NK60Z-1,STD4NK60Z,STD4N K 60Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID=2A 3 S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1mA,VGS= 0 600 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 50µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 2 A 1.76 2 Ω

=25V,f=1MHz,VGS= 0 510

V

DS

67
13

VGS=0V,VDS= 0V to 480V 38.5 pF

VDD=300V,ID=2A
RG= 4.7Ω VGS=10V

12

9.5

(Resistive Load see, Figure 3)

=480V,ID=4A,

V
V

DD
GS

=10V

18.8

3.8

26 nC

9.8

µA
µA

pF
pF
pF

ns
ns

nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 300 V, ID=2A
R

=4.7ΩVGS=10V

G

29

16.5

(Resistive Load see, Figure 3)

t

r(Voff)

= 480V, ID=4A,

t

f

t

c

Fall Time
Cross-over Time

Off-voltage Rise Time

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

12
12

19.5

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 4 A, VGS=0
I

SD

VDD=24V,Tj= 150°C
(see test circuit, Figure 5)

= 4 A, di/dt = 100A/µs

400

1700

8.5

when VDSincreases from 0 to 80%

oss

4

16

1.6 V

ns
ns

ns
ns
ns

A
A

ns

nC

A

3/16

STP4NK60Z,STP4NK60ZFP,STB 4N K60Z,STB4NK60Z-1,STD4NK60Z,STD4N K 60Z-1

Safe Operating Area For TO-220FPSafeOperatingArea:TO-220/DPA K/IPAK/D2PAK/I2P AK

ThermalImpedance:TO-220/DPAK/IPAK/D2PAK/I2PAKThermal Impedance For TO-220FP

Output Characteristics

4/16

Transfer Characteristics

STP4NK60Z,STP4NK60ZFP,STB 4N K60Z,STB4NK60Z-1,STD4NK60Z,STD4N K 60Z-1

Static Drain-source On ResistanceTransconductance

Gate Charge vs Gate-so urce Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

5/16