ST STB25NM60N-1, STF25NM60N, STP25NM60N, STW25NM60N, STB25NM60N User Manual

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N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247

STP25NM60N - STF25NM60N

STB25N M60N/-1 - STW25NM60N

SECOND GENERATION MDmesh™ MOSFET

PRODUCT PREVIEW

Table 1: Ge neral Features

TYPE V

STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
STB25NM60N

■ WORLD’S LOWEST ON RESISTANCE

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE

DS

DSS

(@Tjmax)

650 V
650 V
650 V
650 V
650 V

(on) = 0.140 Ω

R

DS(on)

< 0.170 Ω
< 0.170 Ω
< 0.170 Ω
< 0.170 Ω
< 0.170 Ω

I

D

20 A

20(*) A

20 A
20 A
20 A

CHARGE

■ LOW GATE INPUT RESISTAN CE

DESCRIPTION

The STP25NM60N is realized with the second
generation of MDmesh T echnology. This revolu­tionary MOSFET associates a new vertical struc­ture to the Company's strip layout to yield the
world's lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high ef­ficiency converters

Figure 1: Package

3

2

TO-220

1

TO-220FP

3

1

D²PAK

3

2

1

I²PAK

TO-247

Figure 2: Internal Schematic Diagram

3

2

1

3

2

1

APPLICATIONS

The MDmesh™ II family is very suitable for in­crease the power density of high voltage convert­ers allowing system miniaturization and higher
efficiencies.

Table 2: Order Code

SALES TYPE MARKING PACKAGE PACKAGING

STB25NM60N-1 B25NM60N I²PAK TUBE

STF25NM60N F25NM60N TO-220FP TUBE
STP25NM60N P25NM60N TO-220 TUBE

STW25NM60N W25NM60N TO-247 TUBE

STB25NM60N B25NM60N D²PAK TAPE & REEL

June 2005

This is prel i m i nary informat i on on a new product now in dev el opment. Details are sub j ect to change w ithout notic e.

Rev. 4

1/12

STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

TO-220/I²PAK

TO-247/D²PAK

Drain-source Voltage (VGS = 0) 600 V
Drain-gate Voltage (RGS = 20 kΩ)600V
Gate- source Voltage ± 25 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

20 20 (*) A

12.8 12.8 (*) A
Drain Current (pulsed) 80 80 (*) A
Total Dissipation at TC = 25°C

160 40 W

V

I

DM

V

V

P

DS

DGR

GS

I

D

I

D

(1)

TOT

Derating Factor 1.28 0.32 W/°C

dv/dt (2) Peak Diode Recovery voltage slope TBD V/ns

T

stg

T

j

(*) Limited only by maximum temperature allowed
(1) Pulse wi dt h l i m i ted by safe operating area

≤ 20 A, di/dt ≤ 400 A/µ s, VDD =80%V

(2) I

SD

Storage Temperature – 55 to 150 °C
Max. Operating Junction Temperature 150 °C

.

(BR)DSS

Table 4: Thermal Data

TO-220/I²PAK

TO-247/D²PAK

Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

TO-220FP

TO-220FP

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AS

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAS, VDD = 50 V)

j

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

TBD A

TBD mJ

Table 6: On /Off

Symbol Parameter Test Conditions Value Unit

Min. Typ. Max.

V

(BR)DSS

Drain-source Breakdown
Voltage

dv/dt(2) Drain Source Voltage

Slope

I

DSS

I

GSS

V

GS(th)

R

DS(on

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

Resistance

(2) Characteristic value at turn off on inductive load

ID = 1 mA, VGS = 0 600 V

Vdd=TBD, Id=TBD, Vgs=TBD TBD V/ns

V

= Max Rating

DS

V

= Max Rating, TC = 125°C

DS

V

= ± 20 V 100 nA

GS

V

= VGS, ID = 250 µA 2

DS

3

1

10

4V

VGS = 10 V, ID = 10 A 0.140 0.170 Ω

µA
µA

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15V , ID= 10A 17 S

g

fs

C

iss

C

oss

C

rss

C

OSS eq

R

G

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

(1) Pulsed: Pulse duration = 300 µs, duty cycl e 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C

oss eq.

Input Capacitance
Output Capacitance

= 25 V, f = 1 MHz,

V

DS

VGS = 0
Reverse Transfer
Capacitance

(3).Equivalent Outpu t

VGS = 0 V, VDS = 0 to 480 V TBD pF
Capacitance

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain
Turn-on Delay Time

Rise Time
Turn-off-Delay Time

= 300 V, ID = 10 A,

V

DD

R

= 4.7 Ω, V

G

(see Figure 4)

GS

= 10 V

Fall Time

= 480 V, ID = 20 A,

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V

DD

V

= 10 V

GS

(see Figure 7)

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

ISD = 20 A, VGS = 0

= 25 A, di/dt = 100 A/µs

I

SD

VDD = 100V

(see Figure 5)

= 25 A, di/dt = 100 A/µs

I

SD

VDD = 100V, Tj = 150°C

(see Figure 5)

2565

511

77

2 Ω

TBD
TBD
TBD
TBD

93
TBD
TBD

20
80

1.3 V

TBD
TBD
TBD

TBD
TBD
TBD

when VDS increase s from 0 to 80% V

oss

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

ns

µC

ns

µC

A
A

A

A

DSS

.

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

Figure 3: Unclamped Inductive Load Test Cir­cuit

Figure 4: Switching Times Test Circuit For Re­sistive Load

Figure 6: Unclamped Inductive Wafeform

Figure 7: Gate Charge Test Circuit

Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

6/12

G1

H

F2

123

L4

L2

L5

G

STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

TO-262 (I2PAK) MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728

øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039

V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

MIN. MAX. MIN. MAX.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

Table 9: Revision History

Date Revisio n Description of Change s

30-Nov-2004 1 First Release.
22-Mar-2005 2 Modified title

23-May-2005 3 Inserted some values in Tab7

08-Jun-2005 4 Inserted new row in table 6

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STP25NM60N - STF25NM60N - STB25NM 60N/-1 - STW25NM60N

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
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by implic ati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ect ro ni cs . Sp ec if i cat i on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t
to change without notice. This publication s upersedes and replaces all information previ ously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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