ST STB25NM50N-1, STF25NM50N, STP25NM50N, STW25NM50N, STB25NM50N User Manual

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查询STB25NM50N供应商

STP25NM50N - STF25NM50N

STB25N M50N/-1 - STW25NM50N

N-CH A NNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247

SECOND GENERATION MDmesh™ MOSFET

Table 1: Gener al Featur es

TYPE V

STB25NM50N-1
STF25NM50N
STP25NM50N
STW25NM50N
STB25NM50N

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE

DSS

(@Tj

550V
550V
550V
550V
550V

MAX

) I

22 A(*)

D

22 A
22 A

22 A
22 A

R

DS(on)

0.140 Ω

0.140 Ω

0.140 Ω

0.140 Ω

0.140 Ω

CHARGE

■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The STx25NM50N is realized with the second
generation of MDmesh Techno logy. This revolu

­tionary MOSFET associates a new vertical struc­ture to the Comp any's strip layout to yield one of
the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high
efficiency converters

APPLICATIONS

The MDmesh™ II family is very suitable for in­creasing power density of high voltage converters
allowing system miniaturization and higher effi

­ciencies.

Figure 1: Package

2

TO-220

1

I²PAK

D²PAK

2

TO-247

TO-220FP

Figure 2: Internal Schematic Diagram

2

1

2

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STP25NM50N P25NM50N TO-220 TUBE
STF25NM50N F25NM50N TO-220FP TUBE

STB25NM50N-1 B25NM50N I²PAK TUBE

STW25NM50N W25NM50N TO-247 TUBE

STB25NM50N B25NM50N D²PAK TAPE & REEL

Rev. 9

1/16October 2005

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

TO-220/D²PAK/I²PAK/

TO-247

V

DS

V

DGR

V

GS

I

D

I

D

IDM ()

P

TOT

Drain-source Voltage (VGS = 0) 500 V
Drain-gate Voltage (RGS = 20 kΩ) 500 V
Gate- source Voltage ±25 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

22 22(*) A

14 14 (*) A
Drain Current (pulsed) 88 88 (*) A
Total Dissipation at TC = 25°C

160 40 W

Derating Factor 1.28 0.32 W/°C

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

T

stg

T

Storage Temperature –55 to 150 °C
Max. Operating Junction Temperature 150 °C

j

() Pulse width l i mited by safe operating area

(1) ISD ≤ 22 A, di/dt ≤ 400 A /µs, VDD =80% V
(*) Limited only by maximum temperature allowed

(BR)DSS

.

Table 4: Thermal Data

TO-220/D²PAK/I²PAK/

TO-247

Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

Maximum Lead Temperature For Soldering

l

Purpose

300 °C

TO-220FP

TO-220FP

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AS

Avalanche Current, Repetitive or Not-Repetitive

10 A

(pulse width limited by Tj max)

E

AS

Single Pulse Avalanche Energy

350 mJ

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

2/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol Parameter Test Conditions Value Unit

Min. Typ. Max.

V

(BR)DSS

Drain-source

ID = 1mA, VGS = 0 500 V

Breakdown Voltage

dv/dt(2) Drain Source Voltage

Slope

I

DSS

Zero Gate Voltage
Drain Current (VGS = 0)

I

GSS

Gate-body Leaka ge

Vdd=400V, Id=25A,

44 V/ns

Vgs=10V
VDS = Max Rating

VDS = Max Rating,
TC = 125 °C

1

10

VGS = ± 20V 100 nA

Current (VDS = 0)

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

VDS = VGS, ID = 250 µA

2 3 4 V

VGS = 10V, ID = 11 A 0.110 0.140 Ω

Resistance

(2) Cha rac teristic val ue at turn off on in ductive load

Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS=15 V, ID =11 A

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(*) Equivalent Outpu t

VDS = 25V, f = 1 MHz, VGS = 0 2565

VGS = 0V, VDS = 0V to 400V 315 pF

Capacitance

t

d(on)

t

d(off)

Q
Q
Q

R

t

r

t

f

g

gs

gd

g

Turn-on Delay Time
Rise Time
Off-voltageRise Time

VDD =250 V, ID = 11A
RG = 4.7Ω VGS = 10 V
(see Figure 19)

Fall Time
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

VDD = 400V, ID =22 A,
VGS = 10V,
(see Figure 23)

Gate Input Resistance f=1MHz Gate DC Bias=0

Test Signal Level=20mV
Open Drain

19 S

511

77

23
23
75
22

84
11
35

1.6 Ω

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

(1) Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 %.
(*) C

oss eq.

Source-drain Current

()

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a co nstant equivalent capacit ance giving the same charging time as C

ISD = 22 A, VGS = 0
ISD = 22A, di/dt = 100 A/µs

VDD = 100 V, Tj = 25°C
(see Figure 21)

ISD = 22 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 21)

460

6.9
30

532

8.25
31

when VDS increases from 0 to 80% V

oss

22
88

1.3 V

A
A

ns

µC

A

ns

µC

A

DS

3/16

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

Figure 3: Safe Operating Area For TO-220/
I²PAK/D²PAK

Figure 4: Safe Operating Area For TO-220FP

Figure 6: Thermal Impedance TO-220/I²PAK/
D²PAK

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Safe Operating Area For TO-247

4/16

Figure 8: Thermal Impedance For TO-247

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

Figure 9: Output Characteristics

Figure 10: Transconductance

Figure 12: Transfer Characteristics

Figure 13: Static Drain-Source On Resistance

Figure 11: Gate Charge vs Gate-source Voltage

Figure 14: Capacitance Variations

5/16

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

Figure 15: Normalized Gate Threshold Voltage
vs Tem perat ure

Figure 16: S ource-Drain Forward Char acteris­tics

Figure 17: Normal ized On R esistance vs Tem­perature

Figure 18: Normalized BV

vs Temperature

DSS

6/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

Figure 19: Unclamped Inductive Load Test Cir­cuit

Figure 20: Switching Times Test Circuit For
Resistive Load

Figure 22: Unclamped Inductive Wafeform

Figure 23: Gate Charge Test Circuit

Figure 21: Test Circuit For Inductive Load
Switching and Diode Recovery Times

7/16

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, i n compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at:

www.st.com

8/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

9/16

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

10/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

11/16

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793

E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728

øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

12/16

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

TO-262 (I2PAK) MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

13/16

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126
R0.4 0.015

V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

14/16

3

1

STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

Table 9: Revision History

Date Revision Description of Change s

30-Nov-2004 1 First Release.

08-Mar-2005 2 Inserted Curves
22-Mar-2005 3 Modified title
13-Apr-2005 4 Modified some values
28-Apr-2005 5 Modified some values in Table 8

16-May-2005 6 Modified values in tab7

17-Jun-2005 7 Inserted new row in table 6

07-Sep-2005 8 Inserted ecopack indication

05-Oct-2005 9 Modified curves 9-12

15/16

STP25NM50N - STF25NM50N - STB25NM 50N/-1 - STW25NM50N

16/16

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