ST STB21NM50N, STB21NM50N-1, STF21NM50N, STP21NM50N, STW21NM50N User Manual
STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PA K/ TO -2 4 7
Second generation MDmesh™ Power MOSFET
General features
V
Type
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
1. Limited by wire bonding
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
DSS
(@Tjmax)
550V
550V
550V
550V
550V
R
DS(on)
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
18A
18A
18A
18A
18A
I
D
TO-220
(1)
1
3
2
I2PAK
TO-220FP
3
2
1
3
2
1
TO-247
D2PAK
3
1
Description
The devices are realized with the second
generation of MDmesh Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STB21NM50N B21NM50N D
STB21NM50N-1 B21NM50N I
STF21NM50N F21NM50N TO-220FP Tube
STP21NM50N P21NM50N TO-220 Tube
STW21NM50N W21NM50N TO-247 Tube
Internal schematic diagram
2
PAK Tape & reel
2
PA K Tu be
November 2006 Rev 5 1/18
www.st.com
18
Contents STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol Parameter
TO-220/ D
2
I2PAK/TO-247
PAK/
TO-220FP
Unit
I
V
V
DM
P
DS
GS
I
D
I
D
TOT
Drain-source voltage (VGS = 0) 500 V
Gate- source voltage ±25 V
Drain current (continuous) at TC = 25°C 18 18
Drain current (continuous) at TC = 100°C 11 11
(2)
Drain current (pulsed) 72 72
Total dissipation at TC = 25°C 140 30 W
Derating factor 1.12 0.23 W/°C
(3)
dv/dt
Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from
Viso
T
stg
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V
all three leads to external heat sink
(t=1s;T
=25°C)
C
Storage temperature
Max. operating junction temperature
j
(BR)DSS
Table 2. Thermal data
Symbol Parameter
-- 2500 V
–55 to 150
150
TO-220/D²PAK/
I²PAK / TO-247
TO-220FP Unit
(1)
(1)
(1)
A
A
A
°C
Rthj-case Thermal resistance junction-case max 0.89 4.21 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
Maximum lead temperature for soldering
l
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AS
E
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
max)
j
Single pulse avalanche energy
AS
(starting T
= 25°C, ID = IAR, VDD = 50V)
j
9A
480 mJ
3/18
Electrical characteristics STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Value Unit
Min. Typ. Max.
V
(BR)DSS
dv/dt
I
DSS
I
GSS
V
GS(th)
1. Characteristic value at turn off on inductive load
Drain-source
breakdown voltage
(1)
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (VDS = 0)
GS
= 0)
ID = 1mA, VGS = 0 500 V
V
=400V, ID=25A,
DD
VGS=10V
V
= Max rating
DS
= Max rating,TC@125°C
V
DS
44 V/ns
VGS = ± 20V 100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V
1
10µAµA
Table 5. Dynamic
Symbol Parameter T est conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance VDS = 15V, ID = 9A 12 S
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
= 25V, f = 1 MHz,
V
DS
VGS = 0
1950
420
60
pF
pF
pF
C
oss eq.
t
d(on)
t
d(off)
Q
Q
Q
(2)
capacitance
Turn-on delay time
t
Rise time
r
Off-voltage rise time
t
Fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
V
V
R
(see Figure 20.)
VDD = 400V, ID = 18A,
VGS = 10V,
(see Figure 16.)
Equivalent output
f=1MHz Gate DC Bias=0
R
Gate input resistance
g
test signal level=20mV
open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
. is defined as a constant equivalent capacitance giving the same charging time as C
oss eq
increases from 0 to 80% V
DSS
4/18
= 0V, VDS = 0V to 400V 270 pF
GS
=250V, ID = 9A
DD
=4.7Ω VGS = 10V
G
22
18
90
30
65
10
30
1.6 Ω
when VDS
oss
ns
ns
ns
ns
nC
nC
nC
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 18A, VGS = 0 1.5 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
= 18A,
I
SD
di/dt=100A/µs
= 100V,
V
DD
(see Figure 20.)
= 18A,
I
SD
di/dt=100A/µs
= 100V, Tj = 150°C
V
DD
(see Figure 20.)
360
5
27
464
6.5
27
18
72
A
A
ns
µC
A
ns
µC
A
5/18
Electrical characteristics STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characteristics Figure 6. Transfer characteristics
6/18
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