ST STP210NF02, STB210NF02, STB210NF02-1 User Manual
STB210NF02
STP210NF02 STB210NF02 STB210NF02-1
N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET
TYPE |
VDSS |
RDS(on) |
ID |
|
|
|
|
STB210NF02/-1 |
20 V |
<0.0032 Ω |
120 A(**) |
STP210NF02 |
20 V |
<0.0032 Ω |
120 A(**) |
|
|
|
|
■TYPICAL RDS(on) = 0.0026Ω
■STANDARD THRESHOLD DRIVE
■100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
AUTOMOTIVE SPECIFIC
1 |
3 |
2 |
3 |
|
1 |
||||
|
|
|
||
D²PAK |
I²PAK |
|
|
|
TO-262 |
|
|
||
TO-263 |
|
|
||
|
|
|
||
|
3 |
|
|
|
|
2 |
|
|
|
|
1 |
|
|
|
|
TO-220 |
|
|
APPLICATIONS |
INTERNAL SCHEMATIC DIAGRAM |
■ HIGH CURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAY DRIVERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
Ordering Information
SALES TYPE |
MARKING |
PACKAGE |
PACKAGING |
STB210NF02 |
B210NF02 |
D2PAK |
TUBE |
STB210NF02T4 |
B210NF02 |
D2PAK |
TAPE & REEL |
STP210NF02 |
P210NF02 |
TO-220 |
TUBE |
STB210NF02-1 |
B210NF02 |
I2PAK |
TUBE |
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
20 |
V |
|
VGS |
Gatesource Voltage |
± 20 |
V |
|
ID(**) |
Drain Current (continuous) at TC = 25°C |
120 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
120 |
A |
|
IDM(∙) |
Drain Current (pulsed) |
480 |
A |
|
Ptot |
Total Dissipation at TC = 25°C |
300 |
W |
|
|
Derating Factor |
2.0 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
1 |
V/ns |
|
EAS (2) |
Single Pulse Avalanche Energy |
2.3 |
J |
|
Tstg |
Storage Temperature |
-55 to 175 |
°C |
|
Tj |
Operating Junction Temperature |
|||
|
|
|||
(∙) Pulse width |
limited by safe operating area. |
(1) ISD ≤120A, di/dt ≤250A/µs, VDD ≤ V(BR)DSS, Tj ≤ |
TJMAX |
|
(**) Current Limited by Package |
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 14 V |
|
||
October 2002 |
|
|
1/14 |
|
.
STB210NF02/-1 STP210NF02
THERMAL DATA
Rthj-case |
Thermal Resistance Junction-case |
Max |
0.5 |
°C/W |
Rthj-amb |
Thermal Resistance Junction-ambient |
Max |
62.5 |
°C/W |
Rthj-pcb |
Thermal Resistance Junction-pcb |
Max |
see curve on page 6 |
°C/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
Typ |
300 |
°C |
|
(for 10 sec. 1.6 mm from case) |
|
|
|
|
|
|
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
V(BR)DSS |
Drain-source |
ID = 250 µA |
VGS = 0 |
20 |
|
|
V |
|
Breakdown Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IDSS |
Zero Gate Voltage |
VDS = Max Rating |
|
|
1 |
µA |
|
|
Drain Current (VGS = 0) |
VDS = Max Rating TC = 125°C |
|
|
10 |
µA |
|
IGSS |
Gate-body Leakage |
VGS = ± 20V |
|
|
|
±100 |
nA |
Current (VDS = 0) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ON (*)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
VGS(th) |
Gate Threshold Voltage |
VDS = VGS |
ID = 250 µA |
2 |
|
4 |
V |
|
|
|
|
|
|
|
|
RDS(on) |
Static Drain-source On |
VGS = 10 V |
ID = 50 A |
|
2.6 |
3.2 |
mΩ |
|
Resistance |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
gfs (*) |
Forward Transconductance |
VDS = 10 V |
ID = 50 A |
|
130 |
|
S |
Ciss |
Input Capacitance |
VDS = 15V, f = 1 MHz, VGS = 0 |
|
5100 |
|
pF |
|
Coss |
Output Capacitance |
|
|
|
3500 |
|
pF |
Crss |
Reverse Transfer |
|
|
|
800 |
|
pF |
|
Capacitance |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2/14
STB210NF02/-1 STP210NF02
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
td(on) |
Turn-on Delay Time |
VDD = 10 V |
ID = 60 A |
|
35 |
|
ns |
tr |
Rise Time |
RG = 4.7 Ω |
VGS = 10 V |
|
360 |
|
ns |
|
|
(Resistive Load, Figure 3) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Qg |
Total Gate Charge |
VDD =10V ID =120A VGS=10V |
|
125 |
150 |
nC |
|
Qgs |
Gate-Source Charge |
|
|
|
40 |
|
nC |
Qgd |
Gate-Drain Charge |
|
|
|
50 |
|
nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
|
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
|
td(off) |
Turn-off Delay Time |
VDD = 10 V |
ID = 60 |
A |
|
75 |
|
ns |
tf |
Fall Time |
RG = 4.7Ω, |
VGS = 10 |
V |
|
110 |
|
ns |
|
|
(Resistive Load, Figure 3) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
ISD |
Source-drain Current |
|
|
|
|
120 |
A |
ISDM (∙) |
Source-drain Current (pulsed) |
|
|
|
|
480 |
A |
VSD (*) |
Forward On Voltage |
ISD = 120 A |
VGS = 0 |
|
|
1.3 |
V |
trr |
Reverse Recovery Time |
ISD = 120 A |
di/dt = 100A/µs |
|
70 |
|
ns |
Qrr |
Reverse Recovery Charge |
VDD = 15 V |
Tj = 150°C |
|
120 |
|
nC |
IRRM |
Reverse Recovery Current |
(see test circuit, Figure 5) |
|
3.5 |
|
A |
|
|
|
|
|
|
|
|
|
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∙)Pulse width limited by safe operating area.
Safe Operating Area |
Thermal Impedance |
3/14 |
STB210NF02/-1 STP210NF02
Output Characteristics
Transconductance |
Gate Charge vs Gate-source Voltage
4/14 |
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB210NF02/-1 STP210NF02
Normalized Gate Threshold Voltage vs Temperature |
Normalized on Resistance vs Temperature |
||
|
|
|
|
|
|
|
|
|
|
|
|
Source-drain Diode Forward Characteristics |
Normalized Breakdown Voltage vs Temperature. |
||
|
|
|
|
|
|
|
|
.Power Derating vs Tc |
.Max Id Current vs Tc |
5/14 |
Loading...