ST STP20NM60, STP20NM60FP, STW20NM60, STB20NM60, STB20NM60-1 User Manual

STB20NM60

STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1

N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET

Table 1: General Features

TYPE	VDSS	RDS(on)	ID
STP20NM60	600 V	< 0.29 Ω	20 A
STP20NM60FP	600 V	< 0.29 Ω	20 A
STB20NM60	600 V	< 0.29 Ω	20 A
STB20NM60-1	600 V	< 0.29 Ω	20 A
STW20NM60	600 V	< 0.29 Ω	20 A

■TYPICAL RDS(on) = 0.25 Ω

■HIGH dv/dt AND AVALANCHE CAPABILITIES

■100% AVALANCHE TESTED

■LOW INPUT CAPACITANCE AND GATE CHARGE

■LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Table 2: Order Codes

Figure 1: Package

	2	3	3
	1		2
	TO-220	1
		TO-220FP
		3
		2
		1
	3	TO-247	3
	1	1 2
	D²PAK	I²PAK

Figure 2: Internal Schematic Diagram

	SALES TYPE	MARKING	PACKAGE	PACKAGING
	STP20NM60	P20NM60	TO-220	TUBE
	STP20NM60FP	P20NM60FP	TO-220FP	TUBE
	STB20NM60T4	B20NM60	D²PAK	TAPE & REEL
	STB20NM60-1	B20NM60	I²PAK	TUBE
	STW20NM60	W20NM60	TO-247	TUBE
				Rev.2
February 2005				1/15

STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1

Table 3: Absolute Maximum ratings

Symbol	Parameter	Value			Unit
		TO-220/D²PAK/		TO-220FP
		I²PAK/TO-247
VDS	Drain-source Voltage (VGS = 0)	600			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ )	600			V
VGS	Gatesource Voltage	±30			V
ID	Drain Current (continuous) at TC = 25°C	20		20 (*)	A
ID	Drain Current (continuous) at TC = 100°C	12.6		12.6 (*)	A
IDM ( )	Drain Current (pulsed)	80		80 (*)	A
PTOT	Total Dissipation at TC = 25°C	192		45	W
	Derating Factor	1.2		0.36	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	15			V/ns
VISO	Insulation Winthstand Voltage (DC)	--		2500	V
Tstg	Storage Temperature	-65 to 150			°C
Tj	Max. Operating Junction Temperature	150			°C

( ) Pulse width limited by safe operating area

(1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

Table 4: Thermal Data

		TO-220/D²PAK/	TO-220FP	Unit
		I²PAK/TO-247
Rthj-case	Thermal Resistance Junction-case Max	0.65	2.8	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5		°C/W
Tl	Maximum Lead Temperature For Soldering Purpose	300		°C

Table 5: Avalanche Characteristics

Symbol	Parameter	Max. Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	10	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	650	mJ
	(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	600			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS= Max Rating, TC= 125°C			10	µA
IGSS	Gate-body Leakage	VGS = ± 30V			±100	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250 µA	3	4	5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 10 A		0.25	0.29	Ω
	Resistance

2/15

STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS > ID(on) x R DS(on)max,		11		S
		ID = 10 A
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		1500		pF
Coss	Output Capacitance			350		pF
Crss	Reverse Transfer			35		pF
	Capacitance
Coss eq. (3)	Equivalent Output	VGS = 0V, VDS = 0V to 400 V		215		pF
	Capacitance
td(on)	Turn-on Delay Time	VDD = 200 V, ID = 10 A		25		ns
tr	Rise Time	RG = 4.7Ω VGS = 10 V		20		ns
td(off)	Turn-off Delay Time	(Resistive Load see, Figure 3)		6		ns
tf	Fall Time	VDD = 480 V, ID = 20 A		11		ns
tc	Cross-over Time	(See test circuit, Figure 5)		21		ns
Qg	Total Gate Charge	VDD = 400 V, ID = 20 A,		39	54	nC
Qgs	Gate-Source Charge	VGS = 10V		10		nC
Qgd	Gate-Drain Charge			20		nC
Rg	Gate Input Resistance	f = 1 MHz Gate DC Bias = 0		1.6		Ω
		Test Signal Level = 20 mV
		Open Drain

Table 8: Source Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				20	A
ISDM (2)	Source-drain Current (pulsed)				80	A
VSD (1)	Forward On Voltage	ISD = 20 A, VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD =20 A, di/dt = 100 A/µs		390		ns
Qrr	Reverse Recovery Charge	VDD = 100 V, Tj = 25°C		5		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		25		A
trr	Reverse Recovery Time	ISD =20 A, di/dt = 100 A/µs		510		ns
Qrr	Reverse Recovery Charge	VDD = 100 V, Tj = 150°C		6.5		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		26		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

3/15

STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1

Figure 3: Safe Operating Area for TO-220/

Figure 6: Thermal Impedance for TO-220/

D²PAK/I²PAK

D²PAK/I²PAK

Figure 4: Safe Operating Area for TO-220FP

Figure 7: Thermal Impedance for TO-220FP

Figure 5: Safe Operating Area for TO-247

Figure 8: Thermal Impedance for TO-247

4/15

STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1

Figure 9: Output Characteristics

Figure 12: Gate Charge vs Gate-source Voltage

Figure 10: Transconductance

Figure 13: Normalized Gate Threshold Voltage

vs Temp.

Figure 11: Transfer Characteristics									Figure 14: Static Drain-source On Resistance

5/15