ST STB20NM50, STB20NM50-1, STP20NM50, STP20NM50FP User Manual

STB20NM50

STB20NM50 - STB20NM50-1

STP20NM50 - STP20NM50FP

N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET

General features

	Type	VDSS(@Tj	RDS(on)	ID
		max)
	STB20NM50	550 V	<0.25 Ω	20 A
	STB20NM50-1	550 V	<0.25 Ω	20 A
	STP20NM50	550 V	<0.25 Ω	20 A
	STP20NM50FP	550 V	<0.25 Ω	20 A

■HIGH dv/dt AND AVALANCHE CAPABILITIES

■100% AVALANCHE TESTED

■LOW INPUT CAPACITANCE AND GATE CHARGE

■LOW GATE INPUT RESISTANCE

Description

Package

	3	1 2 3
1	2	I²PAK

TO-220

	3	3
	1	2
		1
	D²PAK	TO-220FP

Internal schematic diagram

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.

Applications

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies

Order codes

Sales Type	Marking	Package	Packaging
STB20NM50T4	B20NM50	D²PAK	TAPE & REEL
STB20NM50-1	B20NM50-1	I²PAK	TUBE
STP20NM505	P20NM50	TO-220	TUBE
STP20NM50FP	P20NM50FP	TO-220FP	TUBE
			Rev 2
September 2005			1/16

www.st.com

1 Electrical ratings

STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP

1 Electrical ratings

Table 1.	Absolute maximum ratings
Symbol		Parameter	Value			Unit
			TO-220/D²PAK/I²PAK		TO-220FP
VGS		Gate-Source Voltage	± 30			V
ID		Drain Current (continuous) at TC = 25°C	20		20 (Note 3)	A
ID		Drain Current (continuous) at TC = 100°C	12.6		12.6 (Note 3)	A
IDM Note 2		Drain Current (pulsed)	80		80 (Note 3)	A
PTOT		Total Dissipation at TC = 25°C	192		45	W
		Derating Factor	1.2		0.36	W/°C
dv/dt Note 1		Peak Diode Recovery voltage slope	15			V/ns
VISO		Insulation Withstand Volatge (DC)	--		2000	V
Tj		Operating Junction Temperature	-65 to 150			°C
Tstg		Storage Temperature

Table 2.	Thermal data
			TO-220/D²PAK/I²PAK	TO-220FP	Unit
Rthj-case		Thermal Resistance Junction-case Max	0.65	2.8	°C/W
Rthj-amb		Thermal Resistance Junction-amb Max	62.5		°C/W
Tl		Maximum Lead Temperature For Soldering	300		°C
		Purpose

Table 3.	Avalanche characteristics
Symbol		Parameter	Max Value	Unit
IAR		Avalanche Current, repetitive or	10	A
		Not-Repetitive (pulse width limited by Tj max)
EAS		Single Pulse Avalanche Energy	650	mJ
		(starting Tj=25°C, ID=5A, VDD= 50V)

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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP

2 Electrical characteristics

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)
Table 4.	On/off states
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS		Drain-Source Breakdown	ID = 250µA, VGS= 0	500			V
		Voltage
IDSS		Zero Gate Voltage Drain	VDS = Max Rating,			1	µA
		Current (VGS = 0)	VDS = Max Rating,Tc = 125°C			10	µA
IGSS		Gate Body Leakage Current	VGS = ±30V			±100	µA
		(VDS = 0)
VGS(th)		Gate Threshold Voltage	VDS= VGS, ID = 250 µA	3	4	5	V
RDS(on)		Static Drain-Source On	VGS= 10 V, ID= 10 A		0.20	0.25	Ω
		Resistance

Table 5.	Dynamic
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs Note 4		Forward Transconductance	VDS > ID(ON) xRDS(ON)max,		10		S
			ID = 10A
Ciss		Input Capacitance			1480		pF
Coss		Output Capacitance	VDS =25V, f=1 MHz, VGS=0		285		pF
Crss		Reverse Transfer Capacitance			34		pF
Coss eq.		Equivalent Ouput Capacitance	VGS=0, VDS =0V to 400V		130		pF
Note 5
			f=1MHz Gate DC Bias=0
Rg		Gate Input Resistance	Test Signal Level=20mV		1.6		Ω
			Open Drain
Qg		Total Gate Charge	VDD=400V, ID = 20A		40	56	nC
Qgs		Gate-Source Charge	VGS =10V		13		nC
Qgd		Gate-Drain Charge	(see Figure 15)		19		nC

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2 Electrical characteristics			STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
Table 6.	Switching times
Symbol		Parameter		Test Conditions	Min.	Typ.	Max.	Unit
td(on)		Turn-on Delay Time		VDD=250 V, ID=10A,		24		ns
				RG=4.7Ω, VGS=10V
tr		Rise Time				16		ns
				(see Figure 16)
tr(Voff)		Off-voltage Rise Time		VDD=400 V, ID=20A,		9		ns
tf		Fall Time		RG=4.7Ω, VGS=10V		8.5		ns
tc		Cross-over Time		(see Figure 16)		23		ns
Table 7.	Source drain diode
Symbol		Parameter		Test Conditions	Min.	Typ.	Max.	Unit
ISD		Source-drain Current					20	A
ISDMNote 2		Source-drain Current (pulsed)					80	A
VSDNote 4		Forward on Voltage		ISD=20A, VGS=0			1.5	V
trr		Reverse Recovery Time		ISD=20A, di/dt = 100A/µs,		350		ns
Qrr		Reverse Recovery Charge				4.6		µC
				VDD=100 V, Tj=25°C
IRRM		Reverse Recovery Current				26		A
trr		Reverse Recovery Time		ISD=20A, di/dt = 100A/µs,		435		ns
Qrr		Reverse Recovery Charge				5.9		µC
				VDD=100 V, Tj=150°C
IRRM		Reverse Recovery Current				27		A

(1)ISD ≤ 20A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2)Pulse width limited by safe operating area

(3)Limited only by maximum temperature allowed

(4)Pulsed: pulse duration = 300µs, duty cycle 1.5%

(5)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP

2 Electrical characteristics

2.1Electrical Characteristics (curves)

Figure 1. Safe Operating Area for

Figure 2. Thermal Impedance for

TO-220/D²PAK/I²PAK

TO-220/D²PAK/I²PAK

Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP

Figure 5. Output Characteristics		Figure 6. Transfer Characteristics

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