ST STB20NK50Z, STB20NK50Z-S, STP20NK50Z, STW20NK50Z User Manual

STB20NK50Z

STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S

N-CHANNEL 500V -0.23Ω - 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™ MOSFET

TYPE	VDSS	RDS(on)	ID	Pw
STB20NK50Z	500 V	< 0.27 Ω	17 A	190 W
STB20NK50Z-S	500 V	< 0.27 Ω	17 A	190 W
STP20NK50Z	500 V	< 0.27 Ω	17 A	190 W
STW20NK50Z	500 V	< 0.27 Ω	17 A	190 W

■TYPICAL RDS(on) = 0.23 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTEDGATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

	2	3	3
1			2
			1

TO-220	TO-247
1 2 3	3
	1

I2SPAK D2PAK

INTERNAL SCHEMATIC DIAGRAM

ORDERING INFORMATION

SALES TYPE	MARKING	PACKAGE	PACKAGING
STB20NK50ZT4	B20NK50Z	D2PAK	TAPE & REEL
STB20NK50Z-S	B20NK50Z	I2SPAK	TUBE
STP20NK50Z	P20NK50Z	TO-220	TUBE
STW20NK50Z	W20NK50Z	TO-247	TUBE

May 2004

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ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter	Value	Unit
	VDS	Drain-source Voltage (VGS = 0)	500	V
	VDGR	Drain-gate Voltage (RGS = 20 kΩ )	500	V
	VGS	Gatesource Voltage	± 30	V
	ID	Drain Current (continuous) at TC = 25°C	17	A
	ID	Drain Current (continuous) at TC = 100°C	10.71	A
	IDM ( )	Drain Current (pulsed)	68	A
	PTOT	Total Dissipation at TC = 25°C	190	W
		Derating Factor	1.51	W/°C
	VESD(G-S)	Gate source ESD(HBM-C=100 pF, R=1.5 KΩ)	6000	V
	dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
	Tj	Operating Junction Temperature	-55 to 150	°C
	Tstg	Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤ 17A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

		TO-220/D2PAK		TO-247
Rthj-case	Thermal Resistance Junction-case Max	0.66			°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5		50	°C/W
Tl					°C
	Maximum Lead Temperature For Soldering Purpose	300

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	17	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	850	mJ
	(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
BVGSO	Gate-Source Breakdown	Igs=± 1mA (Open Drain)	30			V
	Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 1 mA, VGS = 0	500			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ± 20 V			±10	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 100 µA	3	3.75	4.5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 8.5 A		0.23	0.27	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 15 V, ID = 8.5 A		13		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		2600		pF
Coss	Output Capacitance			328		pF
Crss	Reverse Transfer			72		pF
	Capacitance
Coss eq. (3)	Equivalent Output	VGS = 0V, VDS = 0V to 640V		187		pF
	Capacitance

SWITCHING ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 250 V, ID = 8.5 A		28		ns
tr	Rise Time	RG = 4.7Ω , VGS = 10 V		20		ns
td(off)	Turn-off Delay Time	(Resistive Load see, Figure 3)		70		ns
tf	Fall Time			15		ns
Qg	Total Gate Charge	VDD = 400 V, ID = 17 A,		85	119	nC
Qgs	Gate-Source Charge	VGS = 10 V		15.5		nC
Qgd	Gate-Drain Charge			42		nC

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					17	A
ISDM (2)	Source-drain Current (pulsed)					68	A
VSD (1)	Forward On Voltage	ISD = 17	A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 17	A, di/dt = 100 A/µs		355		ns
Qrr	Reverse Recovery Charge	VR = 100 V, Tj = 25°C			3.90		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			22		A
trr	Reverse Recovery Time	ISD = 17	A, di/dt = 100 A/µs		440		ns
Qrr	Reverse Recovery Charge	VR = 100 V, Tj = 150°C			5.72		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			26		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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Safe Operating Area for TO-220 / D2PAK/ I2SPAK Thermal Impedance for TO-220 / D2PAK/I2SPAK

Safe Operating Area for TO-247

Thermal Impedance for TO-247

Output Characteristics	Transfer Characteristics

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