ST STP190NF04, STB190NF04, STB190NF04-1 User Manual
查询STB190NF04供应商
N-CHANNEL 40V - 3.9 mΩ - 120A D2PAK/I2PAK/TO-220
STP190N F04
STB190NF04 STB190NF04-1
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
STB190NF04/-1
STP190NF04
■ TYPICAL R
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
DS
V
DSS
40 V
40 V
(on) =3.9 mΩ
R
DS(on)
<0.0043
<0.0043
I
D
120 A
Ω
120 A
Ω
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURENT, HIGH SWITCHING SPEED
■ AUTOMOTIVE
3
1
2
PAK
D
TO-263
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
2
I
PAK
TO-262
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(
•)
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Current limited by package
•)
February 2004
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
40 V
40 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
••)
Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C
120 A
120 A
310 W
Derating Factor 2.07 W/°C
(1)
Peak Diode Recovery voltage slope 7 V/ns
(1)
Single Pulse Avalanche Energy 860 mJ
Storage Temperature
Max. Operating Junction Temperature
Pulse wi dth limited by safe operat i ng area.
(
••)
1) I
≤190A, di/dt ≤600A/ µ s , VDD ≤ V
SD
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX
1/9
STB190NF04/-1 STP190NF04
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
Typ
0.48
50
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA VGS = 0
D
40 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
= ± 20V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS ID = 250 µA
DS
V
= 10 V ID = 95A
GS
24V
0.0039 0.0043
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
15 V ID= 95 A
DS =
V
= 25V, f = 1 MHz, VGS = 0
DS
200 S
5800
1500
200
µA
µA
Ω
pF
pF
pF
2/9
STB190NF04/-1 STP190NF04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 20 V ID = 95 A
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s af e operatin g area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
V
=20V ID=190 A VGS=10V
DD
= 20 V ID = 95 A
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
I
= 120 A VGS = 0
SD
I
= 190 A di/dt = 100A/µs
SD
= 34 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
45
380
130
40
45
100
75
120
480
1.3 V
90
295
6.5
ns
ns
nC
nC
nC
ns
ns
A
A
ns
nC
A
3/9
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