ST STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z User Manual

STB14NK50Z

STP14NK50Z, STP14NK50ZFP STB14NK50Z, STB14NK50Z-1, STW14NK50Z

N-CHANNEL500V-0.34Ω-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET

TYPE	VDSS	RDS(on)	ID	Pw
STP14NK50Z	500 V	< 0.38 Ω	14 A	150 W
STP14NK50ZFP	500 V	< 0.38 Ω	14 A	35 W
STB14NK50Z	500 V	< 0.38 Ω	14 A	150 W
STB14NK50Z-1	500 V	< 0.38 Ω	14 A	150 W
STW14NK50Z	500 V	< 0.38 Ω	14 A	150 W

■TYPICAL RDS(on) = 0.34 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■GATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

■LIGHTING

ORDERING INFORMATION

3

2

	1
TO-220	TO-220FP

	3
	2
	1
	TO-247
	3
	1
	1 2 3
I2PAK	D2PAK

INTERNAL SCHEMATIC DIAGRAM

SALES TYPE	MARKING	PACKAGE	PACKAGING
STP14NK50Z	P14NK50Z	TO-220	TUBE
STP14NK50ZFP	P14NK50ZFP	TO-220FP	TUBE
STB14NK50ZT4	B14NK50Z	D2PAK	TAPE & REEL
STB14NK50Z-1	B14NK50Z	I2PAK	TUBE
STW14NK50Z	W14NK50Z	TO-247	TUBE

March 2003

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STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value		Unit
		STP14NK50Z	STP14NK50ZFP	STW14NK50Z
		STB14NK50Z/-1
VDS	Drain-source Voltage (VGS = 0)		500		V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)		500		V
VGS	Gatesource Voltage		± 30		V
ID	Drain Current (continuous) at TC = 25°C	14	14 (*)	14	A
ID	Drain Current (continuous) at TC = 100°C	7.6	7.6 (*)	7.6	A
IDM ( )	Drain Current (pulsed)	48	48 (*)	48	A
PTOT	Total Dissipation at TC = 25°C	150	35	150	W
	Derating Factor	1.20	0.28	1.20	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)		4000		V
dv/dt (1)	Peak Diode Recovery voltage slope		4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj	Operating Junction Temperature		-55 to 150		°C
Tstg	Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤14A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

		TO-220	D2PAK		TO-220FP	TO-247
		I2PAK
Rthj-case	Thermal Resistance Junction-case Max	0.83			3.6	0.83	°C/W
Rthj-pcb	Thermal Resistance Junction-pcb Max (#)		60				°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max		62.5			50	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose			300			°C

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	12	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	400	mJ
	(starting Tj = 25 °C, I D = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
BVGSO	Gate-Source Breakdown	Igs=± 1mA (Open Drain)	30			V
	Voltage

(#) When mounted on minimum Footprint

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the 30V Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

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STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 1mA, VGS = 0	500			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±10	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 100 µA	3	3.75	4.5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 6 A		0.34	0.38	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 8 V, ID = 6 A		12		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		2000		pF
Coss	Output Capacitance			238		pF
Crss	Reverse Transfer			55		pF
	Capacitance
Coss eq. (3)	Equivalent Output	VGS = 0V, VDS = 0V to 400V		150		pF
	Capacitance
SWITCHING ON
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 250 V, ID = 6 A		24		ns
tr	Rise Time	RG = 4.7Ω VGS = 10 V		16		ns
		(Resistive Load see, Figure 3)
Qg	Total Gate Charge	VDD = 400V, ID = 12 A,		69	92	nC
Qgs	Gate-Source Charge	VGS = 10V		12		nC
Qgd	Gate-Drain Charge			31		nC
SWITCHING OFF
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 250 V, ID = 6 A		54		ns
tf	Fall Time	RG = 4.7Ω VGS = 10 V		12		ns
		(Resistive Load see, Figure 3)
tr(Voff)	Off-voltage Rise Time	VDD = 400V, ID = 12 A,		9.5		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		9		ns
tc	Cross-over Time	(Inductive Load see, Figure 5)		20		ns
SOURCE DRAIN DIODE
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				12	A
ISDM (2)	Source-drain Current (pulsed)				48	A
VSD (1)	Forward On Voltage	ISD = 12 A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 12 A, di/dt = 100A/µs		470		ns
Qrr	Reverse Recovery Charge	VDD = 35V, Tj = 150°C		3.1		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		13.2		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z

Safe Operating Area For TO-220/D2PAK/I2PAK

Thermal Impedance For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220FP

Safe Operating Area For TO-247

Thermal Impedance For TO-247

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STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z

Output Characteristics

Transfer Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

Static Drain-source On Resistance

Capacitance Variations

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