ST STB135N10, STP135N10 User Manual
STB135N10
STB135N10
STP135N10
N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220 LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA
TYPE |
VDSS |
RDS(on) |
ID |
STB135N10 |
100 V |
<0.009 Ω |
135 A(*) |
STP135N10 |
100 V |
<0.009 Ω |
135 A(*) |
■TYPICAL RDS(on) = 0.007Ω
■EXCEPTIONAL dv/dt CAPABILITY
■100% AVALANCHE TESTED
■SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode’s reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Telecom and Industrial.
APPLICATIONS
■PRIMARY SWITCH IN TELECOM DC-DC CONVERTER
■HIGH-EFFICIENCY DC-DC CONVERTERS
■42V AUTOMOTIVE APPLICATIONS
■SYNCHRONOUS RECTIFICATION
■DIESEL INJECTION
■PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
3 |
|
1 |
3 |
|
|
D2PAK |
2 |
1 |
|
TO-263 |
|
(Suffix “T4”) |
TO-220 |
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
Value |
|
Unit |
|
|
|
|
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
|
V |
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
100 |
|
V |
VGS |
Gatesource Voltage |
± 20 |
|
V |
ID(*) |
Drain Current (continuous) at TC = 25°C |
135 |
|
A |
ID |
Drain Current (continuous) at TC = 100°C |
96 |
|
A |
IDM(1) |
Drain Current (pulsed) |
540 |
|
A |
Ptot |
Total Dissipation at TC = 25°C |
150 |
|
W |
|
Derating Factor |
1 |
|
W/°C |
|
|
|
|
|
dv/dt (2) |
Peak Diode Recovery voltage slope |
TBD |
|
V/ns |
EAS (3) |
Single Pulse Avalanche Energy |
TBD |
|
mJ |
Tstg |
Storage Temperature |
-55 to 175 |
|
°C |
|
|
|
||
Tj |
Operating Junction Temperature |
|
||
|
|
|
||
(1) Pulse width limited by safe operating area. |
(2) ISD ≤ 40A, di/dt ≤ 600A/µs, VDD ≤BVDSS, Tj ≤ TJMAX. |
|
||
(*) Value limited by wire bonding |
(3) Starting Tj = 25 oC, ID = 40A, VDD = 50V |
|
||
July 2003 |
|
|
|
1/8 |
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STB135N10 STP135N10
THERMAL DATA
Rthj-case |
Thermal Resistance Junction-case |
Max |
1 |
°C/W |
Rthj-amb |
Thermal Resistance Junction-ambient |
Max |
62.5 |
°C/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
|
300 |
°C |
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
V(BR)DSS |
Drain-source |
ID = 250 µA, VGS = 0 |
100 |
|
|
V |
|
Breakdown Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
IDSS |
Zero Gate Voltage |
VDS = Max Rating |
|
|
1 |
µA |
|
Drain Current (VGS = 0) |
VDS = Max Rating TC = 125°C |
|
|
10 |
µA |
IGSS |
Gate-body Leakage |
VGS = ± 20V |
|
|
±100 |
nA |
|
Current (VDS = 0) |
|
|
|
|
|
ON (5)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
VGS(th) |
Gate Threshold Voltage |
VDS = VGS |
ID = 250 µA |
2 |
|
4 |
V |
|
|
|
|
|
|
|
|
RDS(on) |
Static Drain-source On |
VGS = 10 V |
ID = 67.5 A |
|
0.007 |
0.009 |
Ω |
|
Resistance |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
gfs (5) |
Forward Transconductance |
VDS = 25 V |
ID = 67.5 A |
|
TBD |
|
S |
Ciss |
Input Capacitance |
VDS = 25V f = 1 MHz VGS = 0 |
|
6350 |
|
pF |
|
Coss |
Output Capacitance |
|
|
|
890 |
|
pF |
Crss |
Reverse Transfer |
|
|
|
250 |
|
pF |
|
Capacitance |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2/8
STB135N10 STP135N10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
td(on) |
Turn-on Delay Time |
VDD = 50 V |
ID = 67.5 A |
|
TBD |
|
ns |
tr |
Rise Time |
RG = 4.7 Ω |
VGS = 10 V |
|
TBD |
|
ns |
|
|
(Resistive Load, Figure 3) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Qg |
Total Gate Charge |
VDD= 50 V ID= 135 A VGS= 5 V |
|
TBD |
95 |
nC |
|
Qgs |
Gate-Source Charge |
|
|
|
TBD |
|
nC |
Qgd |
Gate-Drain Charge |
|
|
|
TBD |
|
nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
|
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
|
td(off) |
Turn-off Delay Time |
VDD = 50 V |
ID = |
67.5 A |
|
TBD |
|
ns |
tf |
Fall Time |
RG = 4.7Ω, |
VGS = |
10 V |
|
TBD |
|
ns |
|
|
(Resistive Load, Figure 3) |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
ISD |
Source-drain Current |
|
|
|
|
135 |
A |
ISDM (1) |
Source-drain Current (pulsed) |
|
|
|
|
540 |
A |
VSD (5) |
Forward On Voltage |
ISD = 135 A |
VGS = 0 |
|
|
1.3 |
V |
trr |
Reverse Recovery Time |
ISD = 135 A |
di/dt = 100A/µs |
|
TBD |
|
ns |
Qrr |
Reverse Recovery Charge |
VDD = 25 V |
Tj = 150°C |
|
TBD |
|
μC |
IRRM |
Reverse Recovery Current |
(see test circuit, Figure 5) |
|
TBD |
|
A |
|
|
|
|
|
|
|
|
|
(1 )Pulse width limited by safe operating area.
(5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
3/8
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