ST STB12NK80Z, STP12NK80Z, STW12NK80Z User Manual
查询STB12NK80Z供应商
N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247
STB12NK80Z
STP12NK80Z - STW12NK80Z
Zener-Protected SuperMESH™ MOSFET
General features
Type
STB12NK80Z
STP12NK80Z
STW12NK80Z
■ EXTREMELY HIGH dv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURI N G
V
DSSRDS(on)
800 V
800 V
800 V
<0.75 Ω
<0.75 Ω
<0.75 Ω
REPEABILITY
I
D
10.5 A
10.5 A
10.5 A
Pw
190 W
190 W
190 W
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, spec ial
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Package
3
2
1
TO-220
D²PAK
3
1
TO-247
Internal schematic diagram
3
2
1
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
Order codes
Sales Type Marking Package Packagin g
STB12NK80ZT4 B12NK80Z D²PAK TAPE & REEL
STP12NK80Z P12NK80Z TO-220 TUBE
STW12NK80Z W12NK80Z TO-247 TUBE
Rev 2
September 2005 1/15
www.st.com
15
1 Electrical ratings STB12NK80Z - STP12NK80Z - STW12NK80Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
V
DS
V
DGR
V
GS
I
D
I
D
Note 2
P
TOT
Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20kΩ)
800 V
800 V
Gate-Source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
10.5 A
6.6 A
Drain Current (pulsed ) 42 A
Total Dis sipation at TC = 25°C
190 W
Derating Factor 1.51 W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 6000 V
dv/dt
Note 1
T
T
stg
Peak Diode Recovery voltage slope 4.5 V/ns
Operating Junction Temperature
j
Storage Temperature
-55 to 150 °C
Table 2. Thermal data
TO-220/D²PAK TO-247 Unit
Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W
Rthj-amb Thermal Resist ance Junction- am b Max 62.5 50 °C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max Valu e Unit
I
AR
E
AS
2/15
Avalanche Curren t, repetitive or
Not-Repetitive (pul se width l imited by Tj max)
Single Pulse Avalanche Energy
(starting Tj=25°C, I
D=IAR
, VDD= 50V)
10.5 A
400 mJ
STB12NK80Z - STP12NK80Z - STW12NK80Z 2 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
GS
= 0)
Gate Body Leakage Current
= 0)
(V
DS
Gate Threshold Voltage
St ati c Drai n-Source On
Resistance
I
= 1mA, VGS= 0
D
= Max Ra ting,
V
DS
V
= Max Rating,Tc = 125°C
DS
= ±20V
V
GS
= VGS, ID = 100 µA
V
DS
V
= 10 V, ID= 4.5 A
GS
800 V
1
50
±10 µA
33.754.5V
0.65 0.75 Ω
Table 5. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
Note 4
fs
C
iss
C
oss
C
rss
C
oss eq.
Note 5
Q
Q
gs
Q
gd
Forward Transconductance
Input Capacitance
Outp u t C a pacita nce
Rev er se Trans fer Capacita n ce
Equivalent Ouput Capacitance
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
=15V, ID = 5.25A
DS
=25V, f=1 MHz, VGS=0
V
DS
=0, V
V
GS
=640V, ID = 10.5 A
V
DD
=10V
V
GS
=0V to 640V
DS
(see Figure 17)
12 S
2620
250
53
100 pF
87
14
44
µA
µA
pF
pF
pF
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test Conditions Min. Typ. Max. Unit
=400 V, ID=5.25 A,
V
t
d(on)
t
t
d(off)
t
t
r(Voff)
t
t
Tur n-on Delay Time
r
Rise Time
Turn-off Delay Time
f
Fall Ti me
Off-vol tage Rise Ti me
f
c
Fall Ti me
Cross-over T ime
DD
R
=4.7Ω, VGS=10V
G
(see Figure 18)
=400 V, ID=5.25A,
V
DD
R
=4.7Ω, VGS=10V
G
(see Figure 18)
=640 V, ID=10.5A,
V
DD
R
=4.7Ω, VGS=10V
G
(see Figure 18)
30
18
70
20
16
15
28
ns
ns
ns
ns
ns
ns
ns
3/15
2 Electric al characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z
Table 7. Source drain diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SDM
V
SD
I
I
SD
Note 2
Note 4
t
rr
Q
rr
RRM
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=10.5 A, VGS=0
=10.5A, di/dt = 100A/µs,
I
SD
V
=100 V, Tj=150°C
DD
10.5
42
1.6 V
635
5.9
18.5
Table 8. Gate-source zener diode
Symbol Parameter Test Conditions Min. Ty p. Max. Unit
BV
GSO
Note 6
(1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V
(2) Pul s e width limited by safe operat ing area
(3) Limited only by maximu m temperat ure allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C
oss eq.
to 80%V
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. Th ese integrated Z ener diodes thus avoid the usage of external components.
Gate-Source
Breakdown Voltage
is defined as a constant equivalent capacitance giving the same charging time as C
DSS
Igs=±1mA
(Open Drain)
, Tj ≤ T
(BR)DSS
JMAX
30 V
when VDS increases from 0
oss
A
A
ns
µC
A
4/15
STB12NK80Z - STP12NK80Z - STW12NK80Z 2 Electrical characteristics
2.1 Electrical Characteristics (curves)
Figure 1. Safe Ope ra tin g A rea for
TO-220/D²PAK
Figure 3. Safe Operating Area for TO-247 Figure 4. Thermal Impedance for TO-247
Figure 2. Thermal Im pedanc e for
TO-220/D²PAK
Figure 5. Output Characteristics Figure 6. Transfer Characteristics
5/15
Loading...