ST STB12NK80Z, STP12NK80Z, STW12NK80Z User Manual

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N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247

STB12NK80Z

STP12NK80Z - STW12NK80Z

Zener-Protected SuperMESH™ MOSFET

General features

Type

STB12NK80Z
STP12NK80Z

STW12NK80Z

■ EXTREMELY HIGH dv/dt CAPABILITY

■ IMPROVED ESD CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURI N G

V

DSSRDS(on)

800 V
800 V
800 V

<0.75 Ω
<0.75 Ω
<0.75 Ω

REPEABILITY

I

D

10.5 A

10.5 A

10.5 A

Pw

190 W
190 W
190 W

Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, spec ial
care is taken to ensure a very good dv/dt
capability for the most demanding applications.

Package

3

2

1

TO-220

D²PAK

3

1

TO-247

Internal schematic diagram

3

2

1

Applications

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTOR AND PFC

Order codes

Sales Type Marking Package Packagin g

STB12NK80ZT4 B12NK80Z D²PAK TAPE & REEL

STP12NK80Z P12NK80Z TO-220 TUBE

STW12NK80Z W12NK80Z TO-247 TUBE

Rev 2

September 2005 1/15

www.st.com

15

1 Electrical ratings STB12NK80Z - STP12NK80Z - STW12NK80Z

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

I

DM

V

DS

V

DGR

V

GS

I

D

I

D

Note 2

P

TOT

Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20kΩ)

800 V

800 V
Gate-Source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

10.5 A

6.6 A
Drain Current (pulsed ) 42 A
Total Dis sipation at TC = 25°C

190 W

Derating Factor 1.51 W/°C

Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 6000 V

dv/dt

Note 1

T

T

stg

Peak Diode Recovery voltage slope 4.5 V/ns

Operating Junction Temperature

j

Storage Temperature

-55 to 150 °C

Table 2. Thermal data

TO-220/D²PAK TO-247 Unit

Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W

Rthj-amb Thermal Resist ance Junction- am b Max 62.5 50 °C/W

T

l

Maximum Lead Temperature For Soldering
Purpose

300 °C

Table 3. Avalanche characteristics

Symbol Parameter Max Valu e Unit

I

AR

E

AS

2/15

Avalanche Curren t, repetitive or
Not-Repetitive (pul se width l imited by Tj max)

Single Pulse Avalanche Energy
(starting Tj=25°C, I

D=IAR

, VDD= 50V)

10.5 A

400 mJ

STB12NK80Z - STP12NK80Z - STW12NK80Z 2 Electrical characteristics

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-Source Breakdown
Voltage

Zero Gate Voltage Drain
Current (V

GS

= 0)

Gate Body Leakage Current

= 0)

(V

DS

Gate Threshold Voltage
St ati c Drai n-Source On

Resistance

I

= 1mA, VGS= 0

D

= Max Ra ting,

V

DS

V

= Max Rating,Tc = 125°C

DS

= ±20V

V

GS

= VGS, ID = 100 µA

V

DS

V

= 10 V, ID= 4.5 A

GS

800 V

1

50

±10 µA

33.754.5V

0.65 0.75 Ω

Table 5. Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

Note 4

fs

C

iss

C

oss

C

rss

C

oss eq.

Note 5

Q

Q

gs

Q

gd

Forward Transconductance
Input Capacitance

Outp u t C a pacita nce
Rev er se Trans fer Capacita n ce

Equivalent Ouput Capacitance

g

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V

=15V, ID = 5.25A

DS

=25V, f=1 MHz, VGS=0

V

DS

=0, V

V

GS

=640V, ID = 10.5 A

V

DD

=10V

V

GS

=0V to 640V

DS

(see Figure 17)

12 S

2620

250

53

100 pF

87
14
44

µA
µA

pF
pF
pF

nC
nC
nC

Table 6. Switching times

Symbol Parameter Test Conditions Min. Typ. Max. Unit

=400 V, ID=5.25 A,

V

t

d(on)

t

t

d(off)

t

t

r(Voff)

t
t

Tur n-on Delay Time

r

Rise Time

Turn-off Delay Time

f

Fall Ti me

Off-vol tage Rise Ti me

f

c

Fall Ti me
Cross-over T ime

DD

R

=4.7Ω, VGS=10V

G

(see Figure 18)

=400 V, ID=5.25A,

V

DD

R

=4.7Ω, VGS=10V

G

(see Figure 18)

=640 V, ID=10.5A,

V

DD

R

=4.7Ω, VGS=10V

G

(see Figure 18)

30
18

70
20

16
15
28

ns
ns

ns
ns

ns
ns
ns

3/15

2 Electric al characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z

Table 7. Source drain diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SDM

V

SD

I

I

SD

Note 2

Note 4

t

rr

Q

rr

RRM

Source-drain Current
Source-drain Current (pulsed)

Forward on Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD=10.5 A, VGS=0

=10.5A, di/dt = 100A/µs,

I

SD

V

=100 V, Tj=150°C

DD

10.5
42

1.6 V

635

5.9

18.5

Table 8. Gate-source zener diode

Symbol Parameter Test Conditions Min. Ty p. Max. Unit

BV

GSO

Note 6

(1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V
(2) Pul s e width limited by safe operat ing area
(3) Limited only by maximu m temperat ure allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C

oss eq.

to 80%V

(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but

also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. Th ese integrated Z ener diodes thus avoid the usage of external components.

Gate-Source
Breakdown Voltage

is defined as a constant equivalent capacitance giving the same charging time as C

DSS

Igs=±1mA
(Open Drain)

, Tj ≤ T

(BR)DSS

JMAX

30 V

when VDS increases from 0

oss

A
A

ns

µC

A

4/15

STB12NK80Z - STP12NK80Z - STW12NK80Z 2 Electrical characteristics

2.1 Electrical Characteristics (curves)

Figure 1. Safe Ope ra tin g A rea for

TO-220/D²PAK

Figure 3. Safe Operating Area for TO-247 Figure 4. Thermal Impedance for TO-247

Figure 2. Thermal Im pedanc e for

TO-220/D²PAK

Figure 5. Output Characteristics Figure 6. Transfer Characteristics

5/15

2 Electric al characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z

Figure 7. Transconductance Figure 8. S tatic Drain-Source on Resistance

Figure 9. Gate Charge vs Gate -Source

Voltage

Figure 10. Normalized Gate Threshold Volta ge

vs Temperatute

Figure 11. Capacitance Variations

Figure 12. Normalized on Resistance vs

Temperature

6/15

STB12NK80Z - STP12NK80Z - STW12NK80Z 2 Electrical characteristics

Figure 13. Source-drain Diode Forward

Characteristics

Figure 15. Maximum Avalanche Energy vs

Temperature

Figure 14. Norma lized BVDSS vs Temperature

7/15

3 Test circuits STB12NK80Z - STP12NK80Z - STW12NK80Z

3 Test circuits

Figure 16. Switching Times Test Circuit For

Resistive Load

Figure 18. Test Circuit For Indictive Load

Switching and Diode Recovery
Times

Figure 17. Gate Charge Test Circuit

Figure 20. Unclamped Inductive Load Test

Circuit

Figure 19. Unclamped Inductive Waveform

8/15

STB12NK80Z - STP12NK80Z - STW12NK80Z 4 Package mechani cal data

4 P ack age mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOP ACK specifications are
available at: www.st.com

9/15

4 Package mechani cal data STB12NK80Z - STP12NK80Z - STW12NK80Z

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

10/15

STB12NK80Z - STP12NK80Z - STW12NK80Z 4 Package mechani cal data

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728

øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

11/15

4 Package mechani cal data STB12NK80Z - STP12NK80Z - STW12NK80Z

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015
V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

3

12/15

1

STB12NK80Z - STP12NK80Z - STW12NK80Z 5 Packing mechanical data

5 Packing mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX . MIN. MAX.

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

13/15

6 Revision Hist ory STB12NK80Z - STP12NK80Z - STW12NK80Z

6 R evi sion History

Date Revision Changes

02-Sep-2005 2 Inserted Ecopack indication

14/15

STB12NK80Z - STP12NK80Z - STW12NK80Z 6 Revision History

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise under any patent or pat ent rights of STMicroelectron i cs . Specifications mentioned in th i s publication are sub je ct
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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15/15