ST STB120NH03L, STP120NH03L User Manual

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STripFET™ III Power MOSFET for DC-DC Conversion

General features

STB120NH03L

STP120NH03L

N-Channel 30V - 0.005Ω - 9A - TO-220/D2PAK

Type

STB120NH03L STP120NH03L

■ Typical R

■ R

■ Conduction Losses Reduced

■ Switching Losses Reduced

■ Low Threshold Device

*Qg Industry’s Benchmark Low

DS(on)

V

DSS

30V 30V

= 0.005Ω @ 10V

DS(on)

R

DS(on)

<0.0055Ω <0.0055Ω

I

D

9A Note 1

Description

These devices utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. It is ideal in high performanc e DC-DC converter applications where efficiency is to be achieved at very high output currents.

Applications

■ Specifically designed and optimized for high

efficiency DC-DC converters

2

TO-220

1

D2PAK

Internal schematic diagram

Order codes

Part Number Marking Package Packaging

STB120NH03L B120NH03L STP120NH03L P120NH03L TO-220 TUBE

December 2005 1/14

2

D

PAK

TAPE & REEL

Rev 1

www.st.com

14

1 Electrical ratings STB120NH03L - STP120NH03L

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

ID Note 1 Drain Current (continuous) at TC = 25°C I

Note 1 Drain Current (continuous) at TC = 100°C

D

Note 2

I

DM

P

TOT

Drain-source Voltage (V Drain-gate Voltage (R

GS

= 0V)

= 20kΩ)

30 V 30 V

Gate-Source Voltage ± 20 V

60 A

60 A Drain Current (pulsed ) 240 A Total Dissip ation at TC = 25°C

115 W

Derating Factor 0.77 W/°C

EAS Note 3 Single Pulse Avalanche Energy 700 mJ

T

J

T

stg

Operating Junction Temperature Storage Temperature

-55 to 175 °C

Table 2. Thermal data

R R

thJC

thJA

T

Thermal Resist ance Junction-case Max 1.30 °C/W Thermal Resist ance Junction-amb Max 62.5 °C/W Maximum Lead Temperature For Soldering

l

Purpose

300 °C

2/14

STB120NH03L - STP120NH03L 2 Electrical characteristics

2 Electrical characteristics

( T

= 25 °C unless otherwise specified )

CASE

Table 3. On/off states

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current (V

GS

= 0)

Gate Body Leakage Current

= 0)

(V

DS

Gate Threshold Voltage St ati c Drai n-Source On

Resistance

I

= 250μA VGS= 0

D

= Max Ra ting,

V

DS

= Max Ra ting,TC=125°C

V

DS

= ±20V

V

GS

= VGS ID = 250µA

V

DS

V

= 10V ID = 30A

GS

V

= 5V ID = 30A

GS

30 V

1

10

±100 µA

11.82.5V

0.005

0.006

0.0055

0.0105

Table 4. Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

C

Note 4

iss

oss

rss

Forward Transconductance Input Capacitance

Outp u t C a pacitanc e Rev er se Transf er Capac it a n ce

Rg Gate Input Resistance

V

= 10V ID = 30A

DS

= 15V, f = 1MHz, V

V

DS

GS

f = 1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain

= 0

40 S

4100

680

70

1.3 Ω

µA µA

Ω Ω

pF pF pF

Qoss

Qgls

Q

g

Q

gs

Q

gd

Note 5

Note 6

Total Gate Charge Gate-Source Charge Gate-Drain Charge

Output Charge Third-quadrant Gate Charge

=15V, ID = 60A

V

DD

=10V

V

GS

Figure 14 on page 7

V

= 16V V

DS

V

< 0 VGS= 10V

DS

GS

= 0

57

77

11.8

7.3 27 ns

55 ns

nC nC nC

3/14

2 Electric al characteristics STB120NH03L - STP120NH03L

Table 5. Switching times

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15V, ID = 30A,

V

t

d(on)

t

d(off)

Tur n- on D elay Ti me

r

Rise Time

Off volt age Rise Time

t

f

FallTime

DD

= 4.7Ω, V

R

G

GS

= 10V

Figure 13 on page 7

= 15V, ID = 30A,

V

DD

= 4.7Ω, V

R

G

GS

= 10V

Figure 15 on page 7

16 95

48 23

ns ns

Table 6. Sour ce dr ai n di ode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

SD

I

SD

I

SDM

Note 4

t

rr

Q

rr

I

RRM

Source-drain Current Source-drain Current (pulsed)

Forward on Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I I

V

Figure 15 on page 7

Note: 1 Value limited by wire bonding

2 Pulse width limited by safe operating area 3 Starting T

= 25°C , ID = 30A, VDD = 15V

J

4 Pulsed: pulse duration = 300µs, duty cycle 1.5% 5Q

oss

= C

*Δ VIN, C

oss

= Cgd + Cds. See Power losses calculation

oss

6 Gate charge for synchronous operation.

= 30A V

SD

= 60A, di/dt = 100A/µs,

SD

= 30V, TJ =150°C

DD

GS

= 0

46 64

2.8

60

240

1.4 V

A A

ns

nC

A

4/14

STB120NH03L - STP120NH03L 2 Electrical characteristics

2.1 Electrical chraracteristics (curves)

Figure 1. Safe Operating Area Figure 2. Thermal Impedance

Figure 3. Output Characteristics Figure 4. Transfer Characteristics

Figure 5. Transconductance Figure 6. Static Drain-Source on Resistance

5/14