ST STP11NM80, STF11NM80, STB11NM80, STW11NM80 User Manual

STP11NM80 - STF11NM80

STB11NM80 - STW11NM80

N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247

MDmesh™ MOSFET

Tabl e 1 : General Feat ures

TYPE V

STP11NM80
STF11NM80
STB11NM80
STW11NM80

■ TYPICA L R

■ LOW GATE INPUT RESISTANCE

■ LOW INPUT CAPACITANCE AND GATE

DSSRDS(on)RDS(on)*QgID

800 V
800 V
800 V
800 V

DS

< 0.40 Ω
< 0.40 Ω
< 0.40 Ω
< 0.40 Ω

(on) = 0.35 Ω

14 Ω∗nC
14 Ω∗nC
14 Ω∗nC
14 Ω∗nC

11 A
11 A
11 A
11 A

CHARGE

■ BEST R

(on)*Qg IN THE INDUSTRY

DS

DESCRIPTION

The MDmesh™ associates the Multiple Drain pro­cess with the Company’s PowerMesh™ horizontal
layout assuring an oustanding low on-resistance.
The adoption of the Company’s proprietary strip
technique yields overall dynamic performance that
is significantly better than that of similar compe ti­tion’s products.

APPLICATIONS

The 800 V MDmes h™ family is very suitable for
single swit ch a pplicat ion s in part icula r for Fl yba ck
and Forward converter topologies and for ignition
circuits in the field of lighting.

Figure 1: Package

3

2

1

TO-220

2

PAK

D

3

1

TO-220FP

TO-247

Figure 2: Internal Schematic Diagram

3

2

1

3

2

1

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STP11NM80 P11NM80 TO-220 TUBE
STF11NM80 F11NM80 TO-220FP TUBE

STB11NM80T4

STW11NM80 W11NM80 TO-247 TUBE

B11NM80

2

D

PAK

TAPE & REEL

Rev. 2

1/14September 2004

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

2

TO-220/D

V

I

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

()

Drain Current (pulsed) 44
Total Dissipation at TC = 25°C
Derating Factor 1.2 0.28 W /°C

T

j

T

stg

(



) Pulse width l i m i t ed by safe oper at i ng area

(*) Limit ed only by the Maximum Te mperature All owed

Operating Junction Temperature
Storage Temperature

Table 4: Thermal Data

TO-220/D

TO-247

Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering
Purpose

PAK

TO-247

TO-220FP

800 V
800 V

11

4.7

11 (*)

4.7 (*)
44 (*)

150

35

-65 to 150 °C

2

PAK

TO-220FP Unit

300 °C

A
A
A

W

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = 2.5A, VDD = 50 V)

j

2.5 A

400 mJ

2/14

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 250 µA, VGS = 0 800 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leaka ge
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 30V 100 nA

GS

V

= VGS, ID = 250 µA

DS

345V

10

100

VGS = 10V, ID =5.5 A 0.35 0.40 Ω

Resistance

Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS > I

fs

C
C
C

R

t

d(on)

t

d(off)

Q
Q
Q

iss

oss

rss

t

r

t

f

gs

gd

G

g

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID = 7.5 A

V

DS

Test Signal Level = 20mV
Open Drain

V

DD

RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 4)

V

DD

VGS = 10V

D(on)

x R

DS(on)max,

8S

= 25 V, f = 1 MHz, VGS = 0 1630

750

30

2.7 Ω

= 400 V, ID = 5.5 A

22
17
46
15

= 640 V, ID = 11 A,

43.6

11.6
21

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

(2)

SDM

(1)

V

SD

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: P ul se duration = 300 µs, duty cycle 1.5 % .

2. Pulse wi dt h l i m ited by safe op erating area.

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 11 A, VGS = 0
I

SD

V

DD

(see test circuit, Figure 5)
I

SD

V

DD

(see test circuit, Figure 5)

= 11 A, di/dt = 100 A/µs

= 50 V, Tj = 25°C

= 11 A, di/dt = 100 A/µs

= 50 V, Tj = 150°C

612

7.22

23.6

970

11.25

23.2

11
44

0.86 V

A
A

ns

µC

A

ns

µC

A

3/14

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

Figure 3: Safe Operating Area For D2PAK/ TO-247 / TO-220

Figure 4: Thermal Impedance For D

2

PAK/

TO-247 / TO-220

Figure 6: Safe Operating Area For TO-220FP

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

4/14

Figure 8: Output Characteristics

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

Figure 9: Transfer Characteristics

Figure 10: Transconductance

Figure 12: Normalized Gate Threshold Voltage vs Tem perature

Figure 13: Static Drain-Source On Resistance

Figure 11: Gate Charge vs Gate-source Voltage

Figure 14: Capacitance Variations

5/14

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

Figure 15: Norm alized O n Resis tance vs T em­perature

Figure 16: S ource-Drain Forward Char acteris­tics

Figure 17: Normalized BV

vs Temperature

DSS

6/14

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

Figure 18: Unclamped Inductive Load Test Cir­cuit

Figure 19: Switching Times Test Circuit For Resistive Load

Figure 21: Unclamped Inductive Wafeform

Figure 22: Gate Charge Test Circuit

Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times

7/14

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8/14

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

9/14

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

TO-263 (D2PAK) MECHANICAL DATA

DIM.

A 4.32 4.57 0.178 0.180

A1 0.00 0.25 0.00 0.009

b 0.71 0.91 0.028 0.350

b2 1.15 1.40 0.045 0.055

c 0.46 0.61 0.018 0.024

c2 1.22 1.40 0.048 0.055

D 8.89 9.02 9.40 0.350 0.355 0.370

D1 8.01 0.315

E 10.04 10.28 0.395 0.404
e 2.54 0.010
H 13.10 13.70 0.515 0.540
L 1.30 1.70 0.051 0.067

L1 1.15 1.39 0.045 0.054
L2 1.27 1.77 0.050 0.069
L4 2.70 3.10 0.106 0.122
V2 0° 8° 0°

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8°

10/14

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055

b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793

E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582

L1 3.70 4.30 0.14 0.17
L2 18.50 0.728

øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP M AX. MIN. TYP. MAX.

mm. inch

11/14

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

12/14

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

Figure 23: Revision History

Date Revision Description of Change s

29-Jul-2004 1 Final Document

13/14

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of s uch inf ormati on nor for a ny infr ing eme nt o f p atent s or o ther ri ghts of third parties whic h m ay r esul t from i ts use. No license is gran ted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously suppl ied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

All other names are the property of their respective owners

© 2004 STMicroelectronics - All Rights Reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

14/14