ST STP11NM80, STF11NM80, STB11NM80, STW11NM80 User Manual

STP11NM80 - STF11NM80

STB11NM80 - STW11NM80

N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247

MDmesh™ MOSFET

Tabl e 1 : General Feat ures

TYPE V

STP11NM80
STF11NM80
STB11NM80
STW11NM80

■ TYPICA L R

■ LOW GATE INPUT RESISTANCE

■ LOW INPUT CAPACITANCE AND GATE

DSSRDS(on)RDS(on)*QgID

800 V
800 V
800 V
800 V

DS

< 0.40 Ω
< 0.40 Ω
< 0.40 Ω
< 0.40 Ω

(on) = 0.35 Ω

14 Ω∗nC
14 Ω∗nC
14 Ω∗nC
14 Ω∗nC

11 A
11 A
11 A
11 A

CHARGE

■ BEST R

(on)*Qg IN THE INDUSTRY

DS

DESCRIPTION

The MDmesh™ associates the Multiple Drain pro­cess with the Company’s PowerMesh™ horizontal
layout assuring an oustanding low on-resistance.
The adoption of the Company’s proprietary strip
technique yields overall dynamic performance that
is significantly better than that of similar compe ti­tion’s products.

APPLICATIONS

The 800 V MDmes h™ family is very suitable for
single swit ch a pplicat ion s in part icula r for Fl yba ck
and Forward converter topologies and for ignition
circuits in the field of lighting.

Figure 1: Package

3

2

1

TO-220

2

PAK

D

3

1

TO-220FP

TO-247

Figure 2: Internal Schematic Diagram

3

2

1

3

2

1

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STP11NM80 P11NM80 TO-220 TUBE
STF11NM80 F11NM80 TO-220FP TUBE

STB11NM80T4

STW11NM80 W11NM80 TO-247 TUBE

B11NM80

2

D

PAK

TAPE & REEL

Rev. 2

1/14September 2004

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

2

TO-220/D

V

I

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

()

Drain Current (pulsed) 44
Total Dissipation at TC = 25°C
Derating Factor 1.2 0.28 W /°C

T

j

T

stg

(



) Pulse width l i m i t ed by safe oper at i ng area

(*) Limit ed only by the Maximum Te mperature All owed

Operating Junction Temperature
Storage Temperature

Table 4: Thermal Data

TO-220/D

TO-247

Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering
Purpose

PAK

TO-247

TO-220FP

800 V
800 V

11

4.7

11 (*)

4.7 (*)
44 (*)

150

35

-65 to 150 °C

2

PAK

TO-220FP Unit

300 °C

A
A
A

W

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = 2.5A, VDD = 50 V)

j

2.5 A

400 mJ

2/14

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 250 µA, VGS = 0 800 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leaka ge
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 30V 100 nA

GS

V

= VGS, ID = 250 µA

DS

345V

10

100

VGS = 10V, ID =5.5 A 0.35 0.40 Ω

Resistance

Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS > I

fs

C
C
C

R

t

d(on)

t

d(off)

Q
Q
Q

iss

oss

rss

t

r

t

f

gs

gd

G

g

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID = 7.5 A

V

DS

Test Signal Level = 20mV
Open Drain

V

DD

RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 4)

V

DD

VGS = 10V

D(on)

x R

DS(on)max,

8S

= 25 V, f = 1 MHz, VGS = 0 1630

750

30

2.7 Ω

= 400 V, ID = 5.5 A

22
17
46
15

= 640 V, ID = 11 A,

43.6

11.6
21

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

(2)

SDM

(1)

V

SD

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: P ul se duration = 300 µs, duty cycle 1.5 % .

2. Pulse wi dt h l i m ited by safe op erating area.

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 11 A, VGS = 0
I

SD

V

DD

(see test circuit, Figure 5)
I

SD

V

DD

(see test circuit, Figure 5)

= 11 A, di/dt = 100 A/µs

= 50 V, Tj = 25°C

= 11 A, di/dt = 100 A/µs

= 50 V, Tj = 150°C

612

7.22

23.6

970

11.25

23.2

11
44

0.86 V

A
A

ns

µC

A

ns

µC

A

3/14

STP11NM8O - STF11NM80 - STB11N M 80 - STW11NM80

Figure 3: Safe Operating Area For D2PAK/ TO-247 / TO-220

Figure 4: Thermal Impedance For D

2

PAK/

TO-247 / TO-220

Figure 6: Safe Operating Area For TO-220FP

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

4/14

Figure 8: Output Characteristics

STP11NM8O - STF11NM80 - STB11NM80 - STW11NM80

Figure 9: Transfer Characteristics

Figure 10: Transconductance

Figure 12: Normalized Gate Threshold Voltage vs Tem perature

Figure 13: Static Drain-Source On Resistance

Figure 11: Gate Charge vs Gate-source Voltage

Figure 14: Capacitance Variations

5/14