ST STP100NF04, STB100NF04, STB100NF04-1 User Manual

查询STB100NF04供应商
N-CHANNEL 40V - 0.0043 - 120A TO-220/D2PAK/I2PAK
STP100NF04
STB100NF04, STB100NF04-1
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE V
STP100NF0 4 STB100NF0 4 STB100NF0 4-1
TYPICAL R
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
DSS
40 V 40 V 40 V
(on) = 0.0043
DS
R
DS(on)
< 0.0046 < 0.0046
<0.0046
I
D
120 A 120 A 120 A
Pw
300 W 300 W 300 W
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size
™”
strip-based process. The res ulting transistor sh ows extremely high packing density for low on-resis­tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man­ufacturing reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
SOLENOID AND RELAY DRIVERS
TO-220
1
D2PAK
I2PAK
3
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP100NF04 P100NF04 TO-220 TUBE
STB100NF04T4 B100NF04
STB100NF04-1
February 2002
B100NF04
2
D
PAK
2
I
PAK
TAPE & REEL
TUBE
1/15
STP100NF04, STB100NF04, STB100NF04-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(#) Drain Current (continuos) at TC = 25°C
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
E
AS
T
j
T
stg
(l) Pulse wi dth limited by saf e operating area (1) I
120A, di/dt 300A/µs, VDD V
SD
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V (#) Current Limited by Package
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max See Curve on page 6 °C/W
Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W
T
l
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k)
40 V 40 V
Gate- source Voltage ± 20 V
120 A
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 480 A Total Dissipation at TC = 25°C
120 A
300 W
Derating Factor 2 W/°C
(2)
Single Pulse Avalanche Energy 1.2 J Operating Junction Temperature
-55 to 175 °C
Storage Temperature
, Tj T
(BR)DSS
Maximum Lead Temperature For Soldering Purpose
JMAX.
TO-220 / I
2
PAK / D2PAK
300 °C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
2/15
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
= 0)
Gate-body Leakage Current (V
DS
= 0) Gate Threshold Voltage Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 40 V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
24V
1
10
VGS = 10V, ID = 50 A 0.0043 0.0046
µA µA
STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V, ID= 50 A 150 S
g
fs
C
iss
C
oss
C
rss
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-on Delay Time Rise Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Turn-off Delay Time Fall Time
= 25V, f = 1 MHz, VGS = 0 5100
V
DS
VDD = 20 V, ID = 60 A R
= 4.7 VGS = 10 V
G
(Resistive Load see, Figure 3)
= 32V, ID = 120 A,
V
DD
VGS = 10V (see, Figure 4)
VDD = 20 V, ID = 60 A RG=4.7Ω VGS = 10 V (Resistive Load see, Figure 3)
1300
160
35
220
110
35 35
80 50
150
pF pF pF
ns ns
nC nC nC
ns ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current
(2)
Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
ISD = 120 A, VGS = 0 I
SD
VDD = 20V, Tj = 150°C (see test circuit, Figure 5)
= 120 A, di/dt = 100A/µs
75
185
5
120 480
1.3 V
A A
ns
nC
A
3/15
STP100NF04, STB100NF04, STB100NF04-1
Power Derating vs Tc
Output Characteristics
Max Id Current vs Tc
Transfer Characteristics
Transconductance
4/15
Static Drain-source On Resistance
STP100NF04, STB100NF04, STB100NF04-1
Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperatur e
Source-drain Diode Forward Characteristics
Normalized Breakdown voltage vs Temperature
5/15
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