ST STP100NF04, STB100NF04, STB100NF04-1 User Manual

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N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK

STP100NF04

STB100NF04, STB100NF04-1

STripFET™ II POWER MOSFET

AUTOMOTIVE SPECIFIC

TYPE V

STP100NF0 4
STB100NF0 4
STB100NF0 4-1

■ TYPICAL R

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

DSS

40 V
40 V
40 V

(on) = 0.0043 Ω

DS

R

DS(on)

< 0.0046 Ω
< 0.0046 Ω

<0.0046 Ω

I

D

120 A
120 A
120 A

Pw

300 W
300 W
300 W

DESCRIPTION

This Power Mosfet is the latest development of ST-

Microelectronics unique “Single Feature Size

™”

strip-based process. The res ulting transistor sh ows
extremely high packing density for low on-resis­tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man­ufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ SOLENOID AND RELAY DRIVERS

TO-220

1

D2PAK

I2PAK

3

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP100NF04 P100NF04 TO-220 TUBE

STB100NF04T4 B100NF04

STB100NF04-1

February 2002

B100NF04

2

D

PAK

2

I

PAK

TAPE & REEL

TUBE

1/15

STP100NF04, STB100NF04, STB100NF04-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

(#) Drain Current (continuos) at TC = 25°C

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns

E

AS

T

j

T

stg

(l) Pulse wi dth limited by saf e operating area
(1) I

≤120A, di/dt ≤ 300A/µs, VDD ≤ V

SD

(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max See Curve on page 6 °C/W

Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W

T

l

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

40 V
40 V

Gate- source Voltage ± 20 V

120 A

Drain Current (continuos) at TC = 100°C

(l)

Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C

120 A

300 W

Derating Factor 2 W/°C

(2)

Single Pulse Avalanche Energy 1.2 J
Operating Junction Temperature

-55 to 175 °C

Storage Temperature

, Tj ≤ T

(BR)DSS

Maximum Lead Temperature For Soldering Purpose

JMAX.

TO-220 / I

2

PAK / D2PAK

300 °C

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

2/15

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

Resistance

ID = 250 µA, VGS = 0 40 V

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 20V ±100 nA

GS

V

= VGS, ID = 250µA

DS

24V

1

10

VGS = 10V, ID = 50 A 0.0043 0.0046 Ω

µA
µA

STP100NF04, STB100NF04, STB100NF04-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V, ID= 50 A 150 S

g

fs

C

iss

C

oss

C

rss

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

g

Q

gs

Q

gd

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Turn-off Delay Time
Fall Time

= 25V, f = 1 MHz, VGS = 0 5100

V

DS

VDD = 20 V, ID = 60 A
R

= 4.7Ω VGS = 10 V

G

(Resistive Load see, Figure 3)

= 32V, ID = 120 A,

V

DD

VGS = 10V
(see, Figure 4)

VDD = 20 V, ID = 60 A
RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)

1300

160

35

220

110

35
35

80
50

150

pF
pF
pF

ns
ns

nC
nC
nC

ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD = 120 A, VGS = 0
I

SD

VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)

= 120 A, di/dt = 100A/µs

75

185

5

120
480

1.3 V

A
A

ns

nC

A

3/15

STP100NF04, STB100NF04, STB100NF04-1

Power Derating vs Tc

Output Characteristics

Max Id Current vs Tc

Transfer Characteristics

Transconductance

4/15

Static Drain-source On Resistance

STP100NF04, STB100NF04, STB100NF04-1

Gate Charge vs Gate-source Voltage

Normalized Gate Thereshold Voltage vs Temp.

Capacitance Variations

Normalized On Resistance vs Temperatur e

Source-drain Diode Forward Characteristics

Normalized Breakdown voltage vs Temperature

5/15