ST STB100NF03L-03, STP100NF03L-03, STB100NF03L-03-1 User Manual
STB100NF03L-03-01
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET
TYPE |
VDSS |
RDS(on) |
ID |
STB100NF03L-03 |
30 V |
<0.0032 Ω |
100 A |
STP100NF03L-03 |
30 V |
<0.0032 Ω |
100 A |
STB100NF03L-03-01 |
30 V |
<0.0032 Ω |
100 A |
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■TYPICAL RDS(on) = 0.0026 Ω
■LOW THRESHOLD DRIVE
■100% AVALANCHE TESTED
■LOGIC LEVEL DEVICE
■THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
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3 |
3 |
1 |
1 2 |
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D2PAK |
I2PAK |
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TO-263 |
TO-262 |
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(Suffix “T4”) |
(Suffix “-1”) |
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3 |
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TO-220 |
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INTERNAL SCHEMATIC DIAGRAM
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■MOTOR CONTROL, AUDIO AMPLIFIERS
■DC-DC & DC-AC CONVERTERS
■SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
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VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
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VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
30 |
V |
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VGS |
Gatesource Voltage |
± 16 |
V |
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ID(1) |
Drain Current (continuous) at TC = 25°C |
100 |
A |
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ID(1) |
Drain Current (continuous) at TC = 100°C |
100 |
A |
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IDM(∙) |
Drain Current (pulsed) |
400 |
A |
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Ptot |
Total Dissipation at TC = 25°C |
300 |
W |
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Derating Factor |
2 |
W/°C |
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EAS(2) |
Single Pulse Avalanche Energy |
1.9 |
J |
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Tstg |
Storage Temperature |
-55 to 175 |
°C |
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Tj |
Operating Junction Temperature |
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(∙) Pulse width |
limited by safe operating area |
(2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V |
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(1) Current Limited by Package |
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February 2003 |
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1/11 |
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
THERMAL DATA
Rthj-case |
Thermal Resistance Junction-case |
Max |
0.5 |
°C/W |
Rthj-amb |
Thermal Resistance Junction-ambient |
Max |
62.5 |
°C/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
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300 |
°C |
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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V(BR)DSS |
Drain-source |
ID = 250 µA, VGS = 0 |
30 |
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V |
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Breakdown Voltage |
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IDSS |
Zero Gate Voltage |
VDS = Max Rating |
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1 |
µA |
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Drain Current (VGS = 0) |
VDS = Max Rating TC = 125°C |
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10 |
µA |
IGSS |
Gate-body Leakage |
VGS = ± 16V |
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±100 |
nA |
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Current (VDS = 0) |
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ON (*)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS |
ID = 250 μA |
1 |
1.7 |
2.5 |
V |
RDS(on) |
Static Drain-source On |
VGS = 10 V |
ID = 50 A |
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0.0026 |
0.0032 |
Ω |
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Resistance |
VGS = 4.5 V |
ID = 50 A |
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0.0032 |
0.0045 |
Ω |
DYNAMIC
Symbol |
Parameter |
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Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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g |
fs |
(*) |
Forward Transconductance |
V |
DS |
>I |
D(on) |
xR |
I |
=10 A |
10 |
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S |
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DS(on)max |
D |
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Ciss |
Input Capacitance |
VDS = 25V f = 1 MHz VGS = 0 |
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6200 |
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pF |
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Coss |
Output Capacitance |
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1720 |
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pF |
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Crss |
Reverse Transfer |
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300 |
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pF |
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Capacitance |
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(on) |
Turn-on Time |
VDD = 15 V |
ID = 50 A |
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35 |
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ns |
tr |
Rise Time |
RG = 4.7 Ω |
VGS = 4.5 V |
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315 |
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ns |
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(Resistive Load, Figure 3) |
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Qg |
Total Gate Charge |
VDD= 24V ID= 100A VGS= 5V |
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88 |
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nC |
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Qgs |
Gate-Source Charge |
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22.5 |
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nC |
Qgd |
Gate-Drain Charge |
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36 |
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nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(off) |
Turn-off Delay Time |
VDD = 20 V |
ID = 50 A |
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115 |
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ns |
tf |
Fall Time |
RG = 4.7Ω, |
VGS = 4.5 V |
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95 |
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ns |
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(Resistive Load, Figure 3) |
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tr(Voff) |
Off-Voltage Rise Time |
Vclamp = 24 V |
ID = 100 A |
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110 |
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ns |
tf |
Fall Time |
RG = 4.7Ω |
VGS = 4.5 V |
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55 |
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ns |
tc |
Cross-over Time |
(Inductive Load, Figure 5) |
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100 |
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ns |
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SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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ISD |
Source-drain Current |
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100 |
A |
ISDM (∙) |
Source-drain Current (pulsed) |
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400 |
A |
VSD (*) |
Forward On Voltage |
ISD = 100 A |
VGS = 0 |
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1.3 |
V |
trr |
Reverse Recovery Time |
ISD = 100 A |
di/dt = 100A/µs |
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75 |
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ns |
Qrr |
Reverse Recovery Charge |
VDD = 20 V |
Tj = 150°C |
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150 |
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nC |
IRRM |
Reverse Recovery Current |
(see test circuit, Figure 5) |
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4 |
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A |
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(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∙)Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
3/11 |
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Output Characteristics |
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Transfer Characteristics |
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Transconductance |
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Capacitance Variations
4/11
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