ST STB100NF03L-03, STP100NF03L-03, STB100NF03L-03-1 User Manual

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STB100NF03L-03 STP100NF03L-03

N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220

STB100NF03L-03-1

STripFET™ II POWER MOSFET

TYPE

STB100NF03L-03
STP100NF03L-03
STB100NF03L-03-01

■ TYPICAL R

■ LOW THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

■ LOGIC LEVEL DEVICE

■ THROUGH-HOLE IPAK (TO-251) POWER

DS

V

DSS

30 V
30 V
30 V

(on) = 0.0026 Ω

R

DS(on)

<0.0032
<0.0032
<0.0032

I

D

100 A

Ω

100 A

Ω

100 A

Ω

PACKAGE IN TUBE (SUFFIX “- 1 ")

■ SURFACE-MOUNTING D

2

PAK (TO-263)
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

3

1

D2PAK

TO-263

(Suffix “T4”)

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

1

I2PAK

TO-262

(Suffix “-1”)

3

2

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ SOLENOID AND RELAY DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

(1) Drain Current (continuous) at T

D

(1) Drain Current (continuous) at T

I

D

(

I

DM

P

tot

E

AS

T

stg

T

j

(

Pulse widt h l i m i ted by safe operating area

•)

(1) Current Limited by Package

.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

30 V
30 V

Gate- source Voltage ± 16 V

= 25°C

C

= 100°C

C

•)

Drain Current (pulsed) 400 A
Total Dissipation at TC = 25°C

100 A
100 A

300 W

Derating Factor 2 W/°C

(2)

Single Pulse Avalanche Energy 1.9 J
Storage Temperature
Operating Junction Temperature

(2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V

-55 to 175 °C

1/11February 2003

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

THERMA L D ATA

Rthj-case

Rthj-amb

T

l

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

Max
Max

0.5

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 250 µA, VGS = 0

V

(BR)DSS

Drain-source

I

D

30 V

Breakdown Voltage

= Max Rating

V

DS

= Max Rating TC = 125°C

V

DS

= ± 16V

V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= V

DS

GS

= 10 V ID = 50 A

V

GS

= 4.5 V ID = 50 A

V

GS

ID = 250 µA

1 1.7 2.5 V

0.0026

0.0032

0.0032

0.0045

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

VDS>I

D(on)xRDS(on)max ID

= 25V f = 1 MHz VGS = 0

V

DS

=10 A

10 S

6200
1720

300

µA
µA

Ω
Ω

pF
pF
pF

2/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 50 A

t

d(on)

Q

Q

Q

t

r

g
gs
gd

Turn-on Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

t

r(Voff)

t

t

f

f

c

Turn-off Delay Time
Fall Time

Off-Voltage Rise Time
Fall Time
Cross-over Time

V

DD

= 4.7

R

Ω

G

VGS = 4.5 V

(Resistive Load, Figure 3)

= 24V ID= 100A VGS= 5V

V

DD

= 20 V ID = 50 A

V

DD

= 4.7Ω, V

R

G

GS

= 4.5 V

(Resistive Load, Figure 3)
V

= 24 V ID = 100 A

clamp

= 4.7

R

Ω

G

V

GS

= 4.5 V

(Inductive Load, Figure 5)

35

315

88

22.5
36

115

95

110

55

100

ns
ns

nC
nC
nC

ns
ns

ns
ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.

(

•)Pulse width limited by saf e operating ar ea.

Safe Operating Area

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 100 A VGS = 0

SD

= 100 A di/dt = 100A/µs

I

SD

= 20 V Tj = 150°C

V

DD

(see test circuit, Figure 5)

Thermal Impedance

100
400

1.3 V

75

150

4

A
A

ns
nC

A

3/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

. .

5/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclam ped I nduct ive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

D2PAK MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

7/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

8/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

TO-220 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409

L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

9/11

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

10/11

BASE QTY BULK QTY

1000 1000

STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1

Information furnishe d is bel i eved to be accurate and reliable. However, STMicroelectroni cs assumes no responsibility for t he consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise unde r any patent or patent rights of STMi croelectronics. Speci fications me ntioned in th i s publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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