ST STB100NF03L-03, STP100NF03L-03, STB100NF03L-03-1 User Manual

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STB100NF03L-03 STP100NF03L-03
N-CHANNEL 30V - 0.0026 -100A D²PAK/I²PAK/TO-220
STB100NF03L-03-1
STripFET™ II POWER MOSFET
TYPE
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-01
TYPICAL R
LOW THRESHOLD DRIVE
100% AVALANCHE TESTED
LOGIC LEVEL DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
DS
V
DSS
30 V 30 V 30 V
R
DS(on)
<0.0032 <0.0032 <0.0032
I
D
100 A
100 A
100 A
PACKAGE IN TUBE (SUFFIX “- 1 ")
SURFACE-MOUNTING D
2
PAK (TO-263) POWER PACKAG E IN TU BE (NO SU FFIX) OR IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest dev elo pment of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on­resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark­able manufacturing reproducibility.
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
1
I2PAK
TO-262
(Suffix “-1”)
3
2
APPLICATIONS
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(1) Drain Current (continuous) at T
D
(1) Drain Current (continuous) at T
I
D
(
I
DM
P
tot
E
AS
T
stg
T
j
(
Pulse widt h l i m i ted by safe operating area
•)
(1) Current Limited by Package
.
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
30 V 30 V
Gate- source Voltage ± 16 V
= 25°C
C
= 100°C
C
•)
Drain Current (pulsed) 400 A Total Dissipation at TC = 25°C
100 A 100 A
300 W
Derating Factor 2 W/°C
(2)
Single Pulse Avalanche Energy 1.9 J Storage Temperature Operating Junction Temperature
(2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V
-55 to 175 °C
1/11February 2003
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
THERMA L D ATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose
Max Max
0.5
62.5 300
°C/W °C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
30 V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 16V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
Resistance
= V
DS
GS
= 10 V ID = 50 A
V
GS
= 4.5 V ID = 50 A
V
GS
ID = 250 µA
1 1.7 2.5 V
0.0026
0.0032
0.0032
0.0045
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance Input Capacitance
Output Capacitance Reverse Transfer Capacitance
VDS>I
D(on)xRDS(on)max ID
= 25V f = 1 MHz VGS = 0
V
DS
=10 A
10 S
6200 1720
300
µA µA
Ω Ω
pF pF pF
2/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 50 A
t
d(on)
Q
Q
Q
t
r
g gs gd
Turn-on Time Rise Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
t
r(Voff)
t
t
f
f
c
Turn-off Delay Time Fall Time
Off-Voltage Rise Time Fall Time Cross-over Time
V
DD
= 4.7
R
G
VGS = 4.5 V
(Resistive Load, Figure 3)
= 24V ID= 100A VGS= 5V
V
DD
= 20 V ID = 50 A
V
DD
= 4.7Ω, V
R
G
GS
= 4.5 V
(Resistive Load, Figure 3) V
= 24 V ID = 100 A
clamp
= 4.7
R
G
V
GS
= 4.5 V
(Inductive Load, Figure 5)
35
315
88
22.5 36
115
95
110
55
100
ns ns
nC nC nC
ns ns
ns ns ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.
(
•)Pulse width limited by saf e operating ar ea.
Safe Operating Area
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
I
= 100 A VGS = 0
SD
= 100 A di/dt = 100A/µs
I
SD
= 20 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
Thermal Impedance
100 400
1.3 V
75
150
4
A A
ns nC
A
3/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/11
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