ST STA516B User Manual

Features

! Low input/output pulse-width distortion

! 200 mΩ R

stage

! CMOS-compatible logic inputs

! Thermal protection

! Thermal warning output

! Undervoltage protection

complementary DMOS output

dsON

STA516B

65-volt, 7.5-amp, quad power half bridge

Description

PowerSO36 package

with exposed pad up
STA516B is a monolithic quad half-bridge stage in
Multipower BCD Technology. The device can be
used as dual bridge or reconfigured, by
connecting pin CONFIG to pins VDD, as a single
bridge with double-current capability or as a half
bridge (binary mode) with half-current capability.

The device is intended for the output stage of a
stereo all-digital high-efficiency amplifier. It is
capable of delivering 200 W + 200 W into 6-Ω
loads with THD = 10% at V

= 51 V or, in single

CC

The input pins have a threshold proportional to
the voltage on pin VL.

The STA516B is aimed at audio amplifiers in Hi-Fi
applications, such as home theatre systems,
active speakers and docking stations.

It comes in a 36-pin PowerSO package with

exposed pad up (EPU).
BTL configuration, 400 W into a 3-Ω load with
THD = 10% at V

Table 1. Device summary

Order code Temperature range Package Packaging

STA516B 0 to 90 °C PowerSO36 EPU Tube

STA516B13TR 0 to 90 °C PowerSO36 EPU Tape and reel

= 52 V.

CC

November 2010 Doc ID 13183 Rev 4 1/17

www.st.com

17

Introduction STA516B

1 Introduction

The STA516B is a high performance quad half-bridge amplifier with the capability to drive up
to 220 W

(a)

stereo into 3- to 8-ohm speakers from a single 50 V supply.

It offers the highest flexibility since it can be configured as a stereo-BTL, as a mono-BTL or
as four channels of single-ended outputs to fit different application requirements.

It provides remarkably high levels of efficiency when driven by the FFX-patented 3-state
pulse-width modulator embedded in STMs digital audio processors .

The device is self-protected by design. Overcurrent, overtemperature, under- and
overvoltage protection are provided with an automatic recovery feature to safeguard the
device and speakers against fault conditions that could damage the overall system.

a. The achievable output power depends on the thermal configuration of the final application.

A high performance thermal interface material between the package exposed pad and the heat sink should be
used in order to maximize output power levels

2/17 Doc ID 13183 Rev 4

STA516B Pin description

2 Pin description

Figure 1. Pin out

VCC_SIGN
VCC_SIGN

TH_WARN

TRISTATE

PWRDN

CONFIG

GND_REG

GND_CLEAN

Table 2. Pin function

VSS

VSS
IN2B
IN2A
IN1B
IN1A

FAU LT

VL
VDD
VDD

36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19

STA516B

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18

Pin Name Type Description

1 GND_SUB PWR Substrate ground

2, 3 OUT2B O Output half bridge 2B

4 VCC2B PWR Positive supply

SUB_GND
OUT2B
OUT2B
VCC2B
GND2B
GND2A
VCC2A
OUT2A
OUT2A
OUT1B
OUT1B
VCC1B
GND1B
GND1A
VCC1A
OUT1A
OUT1A
N.C.

5 GND2B PWR Negative supply

6 GND2A PWR Negative supply

7 VCC2A PWR Positive supply

8, 9 OUT2A O Output half bridge 2A

10, 11 OUT1B O Output half bridge 1B

12 VCC1B PWR Positive supply

13 GND1B PWR Negative supply

14 GND1A PWR Negative supply

15 VCC1A PWR Positive supply

16, 17 OUT1A O Output half bridge 1A

18 N.C. - No internal connection

19 GND_CLEAN PWR Logical ground

20 GND_REG PWR Ground for regulator V

DD

21, 22 VDD PWR 5-V regulator referred to ground

23 VL PWR High logical state setting voltage, V

Doc ID 13183 Rev 4 3/17

L

Pin description STA516B

Table 2. Pin function (continued)

Pin Name Type Description

Configuration pin:

24 CONFIG I

25 PWRDN I

26 TRISTATE I

27 FAULT O

28 TH_WARN O

29 IN1A I Input of half bridge 1A

30 IN1B I Input of half bridge 1B

0: normal operation
1: bridges in parallel (OUT1A = OUT1B, OUT2A = OUT2B (If
IN1A = IN1B, IN2A = IN2B))

Standby pin:
0: low-power mode

1: normal operation

Hi-Z pin:
0: all power amplifier outputs in high impedance state

1: normal operation

Fault pin advisor (open-drain device, needs pull-up resistor):
0: fault detected (short circuit or thermal, for example)

1: normal operation

Thermal warning advisor (open-drain device, needs pull-up
resistor):

0: temperature of the IC >130 °C
1: normal operation

31 IN2A I Input of half bridge 2A

32 IN2B I Input of half bridge 2B

33, 34 VSS PWR 5-V regulator referred to +V

35, 36 VCC_SIGN PWR Signal positive supply

CC

4/17 Doc ID 13183 Rev 4

STA516B Electrical specifications

3 Electrical specifications

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit

V

CC_MAX

V

max

T

j_MAX

T

stg

DC supply voltage (pins 4, 7, 12, 15) 65 V

Maximum voltage on pins 23 to 32 5.5 V

Operating junction temperature 0 to 150 °C

Storage temperature -40 to 150 °C

Warning: Stresses beyond those listed under “Absolute maximum

ratings” may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device
at these or any other conditions beyond those indicated
under “Recommended operating condition” are not implied.
Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability. In the real
application, power supplies with nominal values rated within
the recommended operating conditions, may experience
some rising beyond the maximum operating conditions for a
short time when no or very low current is being drawn
(amplifier in mute state, for instance). In this case the
reliability of the device is guaranteed, provided that the
absolute maximum rating is not exceeded.

Table 4. Thermal data

Symbol Parameter Min Typ Max Unit

T

j-case

T

warn

T

jSD

t

hSD

Table 5. Recommended operating conditions

Thermal resistance junction to case (thermal pad) - 1 2.5 °C/W

Thermal warning temperature - 130 - °C

Thermal shut-down junction temperature - 150 - °C

Thermal shut-down hysteresis - 25 - °C

Symbol Parameter Min Typ Max Unit

V

T

CC

amb

Supply voltage for pins PVCCA, PVCCB 10 - 58 V

Ambient operating temperature 0 - 90 °C

Doc ID 13183 Rev 4 5/17

Electrical specifications STA516B

Unless otherwise stated, the test conditions for Ta bl e 6 below are VL = 3.3 V, VCC = 50 V
and T

Table 6. Electrical characteristics

Symbol Parameter Test conditions Min Typ Max Unit

amb

= 25 °C

R

I

g

g

dsON

dss

N

P

Power P-channel/N-channel
MOSFET R

dsON

Power P-channel/N-channel
leakage Idss

Power P-channel R

dsON

matching

Power N-channel R

dsON

matching

= 1 A - 200 240 mΩ

I

dd

- --50µA

= 1 A 95--%

I

dd

= 1 A 95--%

I

dd

Dt_s Low current dead time (static) see Figure 2 - 1020ns

L = 22 µH, C = 470 nF

= 8 Ω, Idd = 4.5 A

R

L

--50ns

see Figure 3

Resistive load
see Figure 2

Resistive load
see Figure 2

--25ns

--25ns

V

/ 2 +

L

300 mV

/ 2

-

V

L

300 mV

L

= 3.3 V - 35 - µA

V

L

-1-µA

--V

V

Dt_d

t

d ON

t

d OFF

t

r

t

f

V

IN-High

V

IN-Low

I

IN-H

I

IN-L

I

PWRDN-H

High current dead time
(dynamic)

Turn-on delay time Resistive load - - 100 ns

Turn-off delay time Resistive load - - 100 ns

Rise time

Fall time

High level input voltage - - -

Low level input voltage -

High level input current VIN = V

Low level input current VIN = 0.3V -1 -µA

High level PWRDN pin input
current

Low logical state voltage

V

Low

(pins PWRDN, TRISTATE)

= 3.3 V 0.8 - V

V

L

(seeTa bl e 7 )

High logical state voltage

V

High

(pins PWRDN, TRISTATE)

= 3.3 V - 1.7 V

V

L

(seeTa bl e 7 )

I

VCC-

PWRDN

Supply current from VCC in
power down

V

PWRDN

= 0 V --2.4mA

Output current on pins

I

FAULT

FAULT, TH_WARN with fault

V

= 3.3V -1-mA

pin

condition

I

VCC-HiZ

Supply current from VCC in
3-state

V

TRISTATE

= 0 V - 22 - mA

6/17 Doc ID 13183 Rev 4