The ST3DV520E is a 4 differential channel LVDS
multiplexer/demultiplexer low R
switch used to switch between multiple LVDS
sources. It is designed for very low crosstalk, low
bit-to-bit skew and low I/O capacitance, to
maintain high signal integrity.
bidirectional
ON
The differential signal from the LVDS transceiver
is multiplexed into one of two selected outputs
while the unselected switch goes to Hi-Z status.
The device integrates 2 SPDT (single pole dual
throw) switches, for DDC channel.
SEL for LVDS and DDC channel is controlled
independently.
2, 3, 7, 8, 11, 12, 14, 15A, B, C, D, E, F, G, H8-bit bus
48, 47, 43, 42, 37, 36, 32, 31A0, B0, C0, D0, E0, F0, G0, H0 8-bit multiplexed to bus 0
46, 45, 41, 40, 35, 34, 30, 29A1, B1, C1, D1, E1, F1, G1, H1 8-bit multiplexed to bus 1
17SEL1LVDS channel selection
54SEL2DDC channel selection
6$$
'.$
SEL2
'.$
NC
NC
6$$
'.$
!
19, 20DDC1, DDC2DDC switch input
22, 23, 25, 26
DDC1_0, DDC2_0, DDC1_1,
4, 10, 18, 27, 38, 50, 56V
1, 6, 9, 13, 16, 21, 24, 28, 33,
39, 44, 49, 53, 55
5, 51, 52NCNo internal connection
Doc ID 18318 Rev 13/19
DDC2_1
DD
DDC switch output
Supply voltage
GNDGround
Pin descriptionST3DV520E
Figure 2.Input equivalent circuit
SEL
A
B
A0
B0
A1
B1
C
D
C0
D0
C1
D1
E
F
E0
F0
E1
C
F1
G
H
G0
H0
G1
H1
DDC1
DDC2
SEL2
Table 3.LVDS switch function table
SEL1Function
L8-bit bus to 8-bit multiplexed bus 0
H8-bit bus to 8-bit multiplexed bus 1
Table 4.DDC switch function table
SEL2Function
LDDC switch input connected to DDC switch output X_0
HDDC switch input connected to DDC switch output X_1
DDC1_0
DDC1_1
DDC2_0
DDC2_1
AM08682V1
4/19Doc ID 18318 Rev 1
ST3DV520EMaximum rating
2 Maximum rating
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 5.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
V
V
I
O
P
T
stg
T
1. If VIO x IO does not exceed the maximum limit of PD.
Supply voltage to ground-0.5 to 4.6V
DC input output voltage-0.5 to 4.6V
IO
DC control input voltage-0.5 to 4.6V
IC
DC output current
Power dissipation0.5W
D
(1)
Storage temperature-65 to 150°C
Lead temperature (10 sec)300°C
L
2.1 Recommended operating conditions
Table 6.Recommended operating conditions
SymbolParameter
V
V
V
T
Supply voltage to ground3-3.6V
CC
DC control input voltage (SEL1, 2)0-V
IC
DC input/output voltage0-V
IO
Operating temperature-40-85° C
A
120mA
Val ue
MinTypMax
CC
CC
Unit
V
V
Doc ID 18318 Rev 15/19
Electrical characteristicsST3DV520E
3 Electrical characteristics
Table 7.DC electrical characteristics
SymbolParameterTest condition
Voltage input high (SEL1,
2)
Voltage input low
(SEL1, 2)
Clamp diode voltage
(SEL1, 2)
Input high current
(SEL1, 2)
Input low current
(SEL1, 2)
Leakage current through
the switch common
(1)
terminals (A to H)
(DDC1 to DDC2)
High level guaranteed2.4--V
Low level guaranteed-0.5-0.8V
VCC = 3.6 V
= -18 mA
I
IN
VCC = 3.6 V
= V
V
IN
CC
V
= 3.6 V
CC
= GND
V
IN
= 3.6 V
V
CC
A to H = V
CC
DDC1 to DDC2 = V
A0 to H0 = 0 V
A1 to H1 = floating
DDCx_0=0V
IOFF
V
V
V
I
I
IH
IL
IK
IH
IL
(SW)
DDCx1 = floating
IOFF
(SEL1)
SEL1 pin leakage current
SEL1 = V
V
CC
SEL1, 2 = 0 to 3.6 V
= 0 V
, SEL2 = V
CC
VCC = 3.0 V
R
ON
Switch ON resistance
(2)
= 1.5 to V
V
IN
IIN = -40 mA
VCC = 3.0 V
R
ΔR
FLAT
ON
ON resistance flatness
(3)
ON resistance match
between channel
ΔR
= R
ON
(2)(4)
ONMAX-RONMIN
(2)
at 1.5 and VCC
V
IN
= -40 mA
I
IN
VCC = 3.0 V
VIN = 1.5 to V
IIN = -40 mA
CC
CC
CC
CC
Val ue
MinTypMax
--0.8-1.2V
--±5µA
--±5µA
--±1µA
--±1
-4.06.5Ω
-0.5-Ω
-0.41Ω
Unit-40 to 85 °C
µA
1. Refer to Figure 4: Test circuit for leakage current (IOFF) on page 9
2. Measured by voltage drop between channels at indicated current through the switch. ON resistance is determined by the
lower of the voltages.
3. Flatness is defined as the difference between the R
ΔR
4.
measured at same VCC, temperature and voltage level.
ON
ONMAX
and R
of ON resistance over the specified range.
ONMIN
6/19Doc ID 18318 Rev 1
ST3DV520EElectrical characteristics
Table 8.Capacitance (TA = 25 °C, f = 1 MHz)
Val ue
SymbolParameterTest condition
MinTypMax
Unit
C
C
C
1. Refer to Figure 5 on page 10
2. Refer to Figure 6 on page 10
3. Refer to Figure 7 on page 11
SEL1, 2 pin input
IN
capacitance
Switch off
OFF
capacitance
Switch on
ON
capacitance
(1)
(2)
(3)
DC = 0.25 V
AC = 0.5 V
f=1MHz
DC = 0.25 V
AC = 0.5 V
f=1MHz
DC = 0.25 V
AC = 0.5 V
f=1MHz
PP
PP
PP
Table 9.Power supply characteristics
SymbolParameterTest condition
I
Active mode power
CC
supply current
VCC = 3.6 V, VIN = VCC or
GND
-23pF
-45pF
-9.511pF
Val ue
Unit-40 to 85 °C
MinTypMax
-150500
µA
Table 10.Dynamic electrical characteristics (V
SymbolParameterTest condition
(3)
RL= 100 Ω
f = 250 MHz
RL= 100 Ω
f = 250 MHz
RL= 100 Ω
< V
≤ 3.6 V
0
IN
X
O
talk
IRR
Crosstalk
Off isolation
(1)
(2)
BW-3 dB bandwidth
1. Refer to Figure 9 on page 12
2. Refer to Figure 10 on page 13
3. Refer to Figure 8 on page 11
= 3.3 V ±10%)
CC
Val ue
MinTypMax
--45-dB
--37-dB
-600-MHz
Unit-40 to 85 °C
Doc ID 18318 Rev 17/19
Electrical characteristicsST3DV520E
Table 11.Switching characteristics (TA = 25 °C, VCC = 3.3 V ±10%)
Val ue
SymbolParameterTest condition
MinTypMax
Unit
t
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation delayVCC = 3 to 3.6 V-0.25-ns
PD
Line enable time,
,
SEL to x to x0 or x to x1VCC = 3 to 3.6 V0.56.515ns
Line disable time,
,
SEL to x to x0 or x to x1VCC = 3 to 3.6 V0.56.58.5ns
Output skew
t
SK(O)
between center port
VCC = 3 to 3.6 V-0.10.2ns
to any other port
Skew between
t
SK(P)
opposite transition of
the same output
, t
PLH
)
(t
PHL
V
CC
Table 12.ESD performance
SymbolTest condition
Contact discharge
IEC61000-4-2
ESD
Human body model
(MIL-STD-883)
(1)
= 3 to 3.6 V-0.10.2ns
Val ue
Unit
MinTypMax
-±8-kV
-±15-kV
1. Refer to Figure 3: Diagram for suggested VDD decoupling on page 9.
8/19Doc ID 18318 Rev 1
ST3DV520EElectrical characteristics
Figure 3.Diagram for suggested VDD decoupling
VDD
GND
GND
GND
1
VDD
4
GND
6
GND
9
DUT
10
212427 28
GND
GND
C=2uF or
4.7uF
VDD
GND
13
GND
16
VDD
18
Note: 100nF Capacitors must be used as local bypass capacitors between the adjacent VDD and GND pairs (t otal 7)
1. Applicable for system level ESD test
Figure 4.Test circuit for leakage current (I
VDD
VDD
OFF
GND
4950535556
44
39
38
33
GND
)
GND
GND
VDD
GND
11
Doc ID 18318 Rev 19/19
Electrical characteristicsST3DV520E
Figure 5.Test circuit for SEL pin input capacitance (CIN)
1, 21, 2
Figure 6.Test circuit for switch off capacitance (C
11
OFF
)
10/19Doc ID 18318 Rev 1
ST3DV520EElectrical characteristics
Figure 7.Test circuit for switch on capacitance (CON)
11
Figure 8.Test circuit for bandwidth measurement (BW)
1. CL includes proble and jig capacitance.
Doc ID 18318 Rev 111/19
A
A0
(See Note 1)
Electrical characteristicsST3DV520E
Frequency response is measured at the output of the ON channel. For example, when
V
= 0 and A is the input, the output is measured at A0. All unused analog I/O ports are
SEL1
left open.
HP8753ES setup:
Average = 4
R
= 3 kHz
BW
V
= 0.35 V
BIAS
ST = 2 s
P1 = 0 dBm
Figure 9.Test circuit for crosstalk measurement (x
A
B
C
talk
A0
B0
A1
B1
D0
)
D
SEL1D1
1. CL includes proble and jig capacitance.
2. A 50 Ω termination resistor is needed to match the loading of the network analyzer.
12/19Doc ID 18318 Rev 1
C1
AM08683V1
ST3DV520EElectrical characteristics
Crosstalk is measured at the output of the non-adjacent ON channel. For example, when
V
= 0, and B is the input, the output is measured at D. All unused analog input ports are
SEL1
connected to GND and output ports are left open.
HP8753ES setup:
Average = 4
R
= 3 kHz
BW
V
= 0.35 V
BIAS
ST = 2 s
P1 = 0 dBm
Figure 10. Test circuit for off isolation measurement (O
A
B
1
A0
B0
A1
B1
Off isolation is measured at the output of the OFF channel. For example, when V
IRR
)
SEL1
and B is the input, the output is measured at B1. All unused analog input ports are
connected to GND and output ports are left open.
=0,
HP8753ES setup:
Average = 4
R
= 3 kHz
BW
V
= 0.35 V
BIAS
ST = 2 s
P1 = 0 dBm
Doc ID 18318 Rev 113/19
Package mechanical dataST3DV520E
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Figure 11. Package outline for QFN56 (11 x 5 mm) pit ch 0.5 mm
14/19Doc ID 18318 Rev 1
7576329-A
ST3DV520EPackage mechanical data
Table 13.Mechanical data for QFN56 (11 x 5 mm) pitch 0.5 mm
Millimeters
Symbol
MinTypMax
A 0.700.750.80
A1––0.05
A3 –0.20–
b 0.200.250.30
D10.9011.0011.10
D28.308.408.50
D3 –9.50–
E 4.905.005.10
E22.302.402.50
E3 –3.50–
e–0.50–
L 0.300.400.50
Figure 12. Footprint recommendation for QFN56 (11 x 5 mm) pitch 0.5 mm
Doc ID 18318 Rev 115/19
Package mechanical dataST3DV520E
Figure 13. Carrier tape information for QFN56 (11 x 5 mm) pitch 0.5 mm
7875978_K
16/19Doc ID 18318 Rev 1
ST3DV520EPackage mechanical data
Figure 14. Reel information for QFN56 (11 x 5 mm) pitch 0.5 mm
Doc ID 18318 Rev 117/19
Revision historyST3DV520E
5 Revision history
Table 14.Document revision history
DateRevisionChanges
08-Dec-20101Initial release.
18/19Doc ID 18318 Rev 1
ST3DV520E
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