±15KV HUMAN BODY MODEL
±8KV IEC 1000-4-2 CONTACT DISCHARGE
■ 1µA LOW POWER SHUTDOWN WITH
RECEIVER S ACT I VE
■ GUARENTEED DATA RATE
250Kbps (Normal Operation)
1Mbps (Very High Speed Operation)
■ GUARANTEED SLEW RATE RANGE
6V/µs (Normal Operation)
24V/µs (Very High Speed Operation)
■ 0.1µF EXTERNAL CAPACITORS
■ FLOW-THROUGH PINOUT
■ AVAILABLE IN SO-28 AND SSOP-28
■ LOW SUPPLY CURRENT 300µA
DESCRIPTION
The ST3237E is a 3V to 5.5V powered EIA/
TIA-232 and V .28/V.24 communica tion interfaces
high data-rate capability and enhanced
electrostatic discharge (ESD) protection a t ±8KV
using IEC1000-4-2 contact discharge and ±15kV
using Human Body M odel (HBM). The other pins
are protected with standard ESD protection at
SSOP SOP
±2kV using HBM method. The ST3237C is a
transceiver (5 drivers, 3 receivers) for fast modem
applications.
The device has a proprietary low-dropout
transmitter output stage providing true RS-232
performance from a 3V to 5.5V supply using a
dual charge pump. The device is guaranteed to
run at data rates of 250Kbps in the normal
operation mode and 1Mbps in the very high speed
operation mode while maintaining RS-232 output
levels.
Table 1: Order Codes
Type
ST3237ECD0 to 70 °CSO-28 (Tube)27parts per tube / 12tube per box
ST3237EBD-40 to 85 °CSO-28 (Tube)27parts per tube / 12tube per box
ST3237ECDR0 to 70 °CSO-28 (Tape & Reel)1000 parts per reel
ST3237EBDR-40 to 85 °CSO-28 (Tape & Reel)1000 parts per reel
ST3237ECPR0 to 70 °CSSOP-28 (Tape & Reel)1350 parts per reel
ST3237EBPR-40 to 85 °CSSOP-28 (Tape & Reel)1350 parts per reel
Temperature
Range
PackageComments
Rev. 5
1/15March 2005
ST3237E
Table 2: Pin Description
PlN N°SYMBOLNAME AND FUNCTION
1
2GNDGround
3
4V--5.5V Generated by the Charge Pump
5
6
7
8
9
10
11
12
13EN
14SHDN
15VHSCIVery High Speed Control Input. Connected to GND for normal
16
17
18
19
20
21
22
23
24
25
26
27V+5.5V Generated by the Charge Pump
28
C
+Positive Terminal of Inverting Charge Pump Capacitor
2
-Negative Terminal of Inverting Charge Pump Capacitor
C
2
T1
T2
T3
T4
T5
R1
R2
R3
OUT
OUT
OUT
IN
IN
OUT
IN
OUT
First Transmitter Output Voltage
Second Transmitter Output Voltage
Third Transmitter Output Voltage
First Receiver Input Voltage
Second Receiver Input Voltage
Fourth Transmitter Output Voltage
Third Receiver Input Voltage
Fifth Transmitter Output Voltage
Receiver Enable, Active Low
Shutdown Control, Active Low
operation; connected to VCC for 1Mbps transmission rates.
R1
OUTB
T5
IN
R3
OUT
T4
IN
R2
OUT
R1
OUT
T3
IN
T2
IN
T1
N
-Negative Terminal of Voltage-Doubler Charge Pump Capacitor
C
1
V
CC
+Positive Terminal of Voltage-Doubler Charge Pump Capacitor
C
1
Non Inverting Complementary Receiver Output. Always Active.
Fifth Transmitter Input Voltage
Third Receiver Output Voltage
Fourth Transmitter Input Voltage
Second Receiver Output Voltage
First Receiver Output Voltage
Third Transmitter Input Voltage
Second Transmitter Input Voltage
First Transmitter Input Voltage
Supply Voltage
2/15
Figure 1: Pin C onfigur a tion
Table 3: Absolute Maximum Ratings
ST3237E
SymbolParameterValueUnit
V
CC
Supply Voltage
-0.3 to 6V
V+Doubled Voltage Terminal-0.3 to 7V
V-Inverted Voltage Terminal0.3 to -7V
V+ +|V-|13V
T
IN
SHDN
VHSCI
R
IN
T
OUT
, R
R
OUT
t
SHORT
T
stg
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied. V+ and V- can have a maximum magnitude of +7V, but their absolute addition can not exceed 13 V.
Transmitter Input Voltage Range
-0.3 to 6V
, EN-0.3 to 6V
Very High Speed Control Input-0.3 to (V
Receiver Input Voltage Range
Transmitter Output Voltage Range
Receiver Output Voltage Range-0.3 to (VCC + 0.3)
OUTB
Short Circuit Duration on T
(one at a time)
OUT
Storage Temperature Range
Continuous
-65 to 150°C
+0.3)
CC
± 25V
± 13.2V
V
V
Table 4: Sh ut do wn And Enab le Control Truth Table
measured from +3V to -3V or -3V to +3V
CL = 150pF to 1000pF
VHSCI=GND
CL = 150pF to 1000pFVHSCI=V
CC
6
24
4
30
150
30
CL = 150pF to 2500pF
VHSCI=GND
V/µs
V/µs
V/µs
ns
ns
Transmi t ter Skew is me asured at th e tr ansmitter zero cross poi nts
5/15
ST3237E
Figure 2: Application Circ uits
Table 11: Capacitance Value (µF)
V
CC
3.0 to 3.60.220.220.220.220.1
3.1 to 3.60.10.10.10.10.1
4.5 to 5.50.0470.330.330.330.1
3.0 to 5.50.220.10.10.10.1
6/15
C1C2C3C4Cbypass
ST3237E
TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified Tj = 25°C )
Figure 3: LOW Level Receiver Output Current Figure 4: HIGH Level Receiver Output Current
Figure 5: ESD Protection
Note: The High ESD protected pin s are the I/O RS232 line, transmitter out and receiver in. The other pins guarant ee ± 2KV HBM ESD protection v ersus ground by means of di odes.
APPLICATION NOTE
This application note des cribes the procedure for
determining the susceptibility and the test method
to verify ST ESD advanced pro tection on RS-232
or RS485 I/O device.
Static electricity is defined as a n electrical charge
caused by an imbalance of electrons on the
surface of a material. This imbalance of electrons
produces an electric field that can be measured
and that can influence other objects at a distance.
Electrostatic discharge is defined as the transfer
of charge between bodies at different electrical
potentials. Electrostatic discharge (ESD) can
change the electrical characteristics of a
semiconductor device, degrading or destroy ing it.
Any input or output port (I/O) allows access
communication with ot her pieces of equipment by
external connectors. These connectors are
directly linked by the I/O pins of RS-232 or RS485
interface. ST provides the E-series by advanced
high ESD protection structure. The protection
functionality is tested in two different conditions:
The first model is used to simulate the HUMAN
BODY MODEL (HBM) event. A similar discharge
can occur from a charged conductive object, such
as a metallic tool or fixture. The model used to
characterize this event is known as the Machine
Model. A Human Body Model circuit and
waveform is presented in Figures below.
7/15
ST3237E
Figure 6: Human Body Model C i rcuit
Figure 7: Human Body Model C urrent W av eform
The second model is IEC 1000-4-2 and is used to
simulate the reaction of the device on equipment
when subjected to electros tatic discha rges , which
may occur from personnel to objects near vital
Figure 8: IEC 1000-4-2 Circuit
8/15
instrumentation. Direct (Contact) and indi rect (Air
Gap) applications o f discharges to t he equipment
under test (EUT) are possible. Test characteristics
are shown in circuit, waveform and table below.
Figure 9: IEC 1000-4-2 Current Waveform
Table 12: Characteristics Of The ESD Generator
ST3237E
Level
12 KV7.5 A0.7 to 1ns4 A2 A
24 KV15 A0.7 to 1ns8 A4 A
36 KV22.5 A0.7 to 1ns12 A6 A
48 KV30 A0.7 to 1ns16 A8 A
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