This document describes the device features and highlights the important electrical and
physical characteristics.
1.2 Description
These 32-bit automotive microcontrollers are a family of system-on-chip (SoC) devices
designed to be central to the development of the next wave of central vehicle body
controller, smart junction box, front module, peripheral body, door control and seat control
applications.
This family is one of a series of next-generation integrated automotive microcontrollers
based on the Power Architecture technology and designed specifically for embedded
applications.
The advanced and cost-efficient e200z0h host processor core of this automotive controller
family complies with the Power Architecture technology and only implements the VLE
(variable-length encoding) APU (auxiliary processing unit), providing improved code density.
It operates at speeds of up to 48 MHz and offers high performance processing optimized for
low power consumption. It capitalizes on the available development infrastructure of current
Power Architecture devices and is supported with software drivers, operating systems and
configuration code to assist with the user’s implementations.
The device platform has a single level of memory hierarchy and can support a wide range of
on-chip static random access memory (SRAM) and internal flash memory.
1.2V decoupling pins. Decoupling capacitor must be
connected between these pins and the nearest V
(1)
pin.
SS_LV
1.2V decoupling pins. Decoupling capacitor must be
connected between these pins and the nearest V
(1)
pin.
DD_LV
11, 23, 5719, 32, 85
10, 24, 5818, 33, 86
VDD_BV Internal regulator supply voltage1220
1. A decoupling capacitor must be placed between each of the three VDD_LV/VSS_LV supply pairs to ensure stable voltage
(see the recommended operating conditions in the device datasheet for details).
3.4 Pad types
In the device the following types of pads are available for system pins and functional port
pins:
S = Slow
M = Medium
F = Fast
I = Input only with analog feature
J = Input/Output (‘S’ pad) with analog feature
X = Oscillator
(a)
(a) (b)
(a) (b)
(a)
3.5 System pins
The system pins are listed in Ta bl e 5 .
a. See the I/O pad electrical characteristics in the device datasheet for details.
b. All medium and fast pads are in slow configuration by default at reset and can be configured as fast or medium
(see the PCR[SRC] description in the device reference manual).
Doc ID 16315 Rev 513/82
Package pinouts and signal descriptionsSPC560D30x, SPC560D40x
Table 5.System pin descriptions
Port
pin
RESET
Function
Bidirectional reset with Schmitt-Trigger
characteristics and noise filter.
Analog output of the oscillator amplifier
circuit, when the oscillator is not in bypass
EXTAL
mode.
Analog input for the clock generator when the
oscillator is in bypass mode.
(1)
Analog input of the oscillator amplifier circuit.
XTAL
1. Refer to the relevant section of the device datasheet.
Needs to be grounded if oscillator is used in
bypass mode.
(1)
3.6 Functional ports
The functional port pins are listed in Ta bl e 6 .
Table 6.Functional port pin descriptions
I/O
direction
Pad
type
RESET
configuration
Pin number
LQFP64 LQFP100
Input, weak
I/OM
pull-up only
917
after PHASE2
I/OXTristate2736
IXTristate2534
Port pinPCR
PA[0]PCR[0]
PA[1]PCR[1]
PA[2]PCR[2]
Alternate
function
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
FunctionPeripheral
(1)
GPIO[0]
E0UC[0]
CLKOUT
E0UC[13]
WKPU[19]
(3)
GPIO[1]
E0UC[1]
—
—
(4)
NMI
WKPU[2]
(3)
GPIO[2]
E0UC[2]
—
MA[2]
WKPU[3]
(3)
Por t A
SIUL
eMIOS_0
CGL
eMIOS_0
WKPU
SIUL
eMIOS_0
—
—
WKPU
WKPU
SIUL
eMIOS_0
—
ADC
WKPU
I/O
direction
(2)
I/O
I/O
O
I/O
I
I/O
I/O
—
—
I
I
I/O
I/O
—
O
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
MTristate512
STristate47
STristate35
14/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage pinouts and signal descriptions
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PA[3]PCR[3]
PA[4]PCR[4]
PA[5]PCR[5]
PA[6]PCR[6]
Alternate
function
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
FunctionPeripheral
(1)
GPIO[3]
E0UC[3]
—
CS4_0
EIRQ[0]
ADC1_S[0]
GPIO[4]
E0UC[4]
—
CS0_1
WKPU[9]
(3)
GPIO[5]
E0UC[5]
—
—
GPIO[6]
E0UC[6]
—
CS1_1
EIRQ[1]
SIUL
eMIOS_0
—
DSPI_0
SIUL
ADC
SIUL
eMIOS_0
—
DSPI_1
WKPU
SIUL
eMIOS_0
—
—
SIUL
eMIOS_0
—
DSPI_1
SIUL
I/O
direction
(2)
I/O
I/O
—
I/O
I
I
I/O
I/O
—
I/O
I
I/O
I/O
—
—
I/O
I/O
—
I/O
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
STristate4368
STristate2029
MTristate5179
STristate5280
PA[7]PCR[7]
PA[8]PCR[8]
PA[9]PCR[9]
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
N/A
AF0
AF1
AF2
AF3
N/A
—
—
—
(5)
(5)
GPIO[7]
E0UC[7]
—
—
EIRQ[2]
ADC1_S[1]
GPIO[8]
E0UC[8]
E0UC[14]
—
EIRQ[3]
ABS[0]
GPIO[9]
E0UC[9]
—
CS2_1
FAB
SIUL
eMIOS_0
—
—
SIUL
ADC
SIUL
eMIOS_0
eMIOS_0
—
SIUL
BAM
SIUL
eMIOS_0
—
DSPI_1
BAM
I/O
I/O
—
—
I/O
I/O
—
—
I/O
I/O
—
I/O
STristate4471
I
I
Input,
S
weak pull-
4572
up
I
I
SPull-down4673
I
Doc ID 16315 Rev 515/82
Package pinouts and signal descriptionsSPC560D30x, SPC560D40x
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PA[10]PCR[10]
PA[11]PCR[11]
PA[12]PCR[12]
Alternate
function
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
—
—
AF0
AF1
AF2
AF3
—
—
FunctionPeripheral
(1)
GPIO[10]
E0UC[10]
—
LIN2TX
ADC1_S[2]
GPIO[11]
E0UC[11]
—
—
EIRQ[16]
ADC1_S[3]
LIN2RX
GPIO[12]
—
—
—
EIRQ[17]
SIN_0
SIUL
eMIOS_0
—
LINFlex_2
ADC
SIUL
eMIOS_0
—
—
SIUL
ADC
LINFlex_2
SIUL
—
—
—
SIUL
DSPI_0
I/O
direction
(2)
I/O
I/O
—
O
I
I/O
I/O
—
—
I
I
I
I/O
—
—
—
I
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
STristate4774
STristate4875
STristate2231
PA[13]PCR[13]
PA[14]PCR[14]
PA[15]PCR[15]
PB[0]PCR[16]
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
GPIO[13]
SOUT_0
—
CS3_1
GPIO[14]
SCK_0
CS0_0
E0UC[0]
EIRQ[4]
GPIO[15]
CS0_0
SCK_0
E0UC[1]
WKPU[10]
GPIO[16]
CAN0TX
—
LIN2TX
(3)
FlexCAN_0
SIUL
DSPI_0
—
DSPI_1
SIUL
DSPI_0
DSPI_0
eMIOS_0
SIUL
SIUL
DSPI_0
DSPI_0
eMIOS_0
WKPU
Por t B
SIUL
—
LINFlex_2
I/O
O
—
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
O
—
O
MTristate2130
MTristate1928
I
MTristate1827
I
MTristate1423
16/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage pinouts and signal descriptions
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PB[1]PCR[17]
PB[2]PCR[18]
PB[3]PCR[19]
PB[4]PCR[20]
PB[5]PCR[21]
PB[6]PCR[22]
PB[7]PCR[23]
Alternate
function
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
FunctionPeripheral
(1)
GPIO[17]
—
—
LIN0RX
WKPU[4]
(3)
CAN0RX
GPIO[18]
LIN0TX
—
—
GPIO[19]
—
—
—
WKPU[11]
(3)
LIN0RX
GPIO[20]
—
—
—
ADC1_P[0]
GPIO[21]
—
—
—
ADC1_P[1]
GPIO[22]
—
—
—
ADC1_P[2]
GPIO[23]
—
—
—
ADC1_P[3]
SIUL
—
—
LINFlex_0
WKPU
FlexCAN_0
SIUL
LINFlex_0
—
—
SIUL
—
—
—
WKPU
LINFlex_0
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
I/O
direction
(2)
I/O
—
—
I
I
I
I/O
O
—
—
I/O
—
—
—
I
I
I
—
—
—
I
I
—
—
—
I
I
—
—
—
I
I
—
—
—
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
STristate1524
MTristate64100
STristate11
ITristate3250
ITristate3553
ITristate3654
ITristate3755
Doc ID 16315 Rev 517/82
Package pinouts and signal descriptionsSPC560D30x, SPC560D40x
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PB[8]PCR[24]
PB[9]PCR[25]
PB[10]PCR[26]
Alternate
function
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
—
FunctionPeripheral
(1)
GPIO[24]
—
—
—
ADC1_S[4]
WKPU[25]
(3)
GPIO[25]
—
—
—
ADC1_S[5]
WKPU[26]
(3)
GPIO[26]
—
—
—
ADC1_S[6]
WKPU[8]
(3)
SIUL
—
—
—
ADC
WKPU
SIUL
—
—
—
ADC
WKPU
SIUL
—
—
—
ADC
WKPU
I/O
direction
(2)
I
—
—
—
I
I
I
—
—
—
I
I
I/O
—
—
—
I
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
ITristate3039
ITristate2938
JTristate3140
PB[11]PCR[27]
PB[12]PCR[28]
PB[13]PCR[29]
PB[14]PCR[30]
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
GPIO[27]
E0UC[3]
—
CS0_0
ADC1_S[12]
GPIO[28]
E0UC[4]
—
CS1_0
ADC1_X[0]
GPIO[29]
E0UC[5]
—
CS2_0
ADC1_X[1]
GPIO[30]
E0UC[6]
—
CS3_0
ADC1_X[2]
SIUL
eMIOS_0
—
DSPI_0
ADC
SIUL
eMIOS_0
—
DSPI_0
ADC
SIUL
eMIOS_0
—
DSPI_0
ADC
SIUL
eMIOS_0
—
DSPI_0
ADC
I/O
I/O
—
I/O
I/O
I/O
—
O
I/O
I/O
—
O
I/O
I/O
—
O
JTristate3859
I
JTristate3961
I
JTristate4063
I
JTristate4165
I
18/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage pinouts and signal descriptions
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PB[15]PCR[31]
(6)
(6)
PCR[32]
PCR[33]
PC[0]
PC[1]
PC[2]PCR[34]
Alternate
function
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
FunctionPeripheral
(1)
GPIO[31]
E0UC[7]
—
CS4_0
ADC1_X[3]
GPIO[32]
—
TDI
—
GPIO[33]
—
TDO
—
GPIO[34]
SCK_1
—
—
EIRQ[5]
SIUL
eMIOS_0
—
DSPI_0
ADC
Por t C
SIUL
—
JTAGC
—
SIUL
—
JTAGC
—
SIUL
DSPI_1
—
—
SIUL
I/O
direction
(2)
I/O
I/O
—
O
I
I/O
—
I
—
I/O
—
O
—
I/O
I/O
—
—
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
JTristate4267
Input,
M
weak pull-
5987
up
FTristate5482
MTristate5078
PC[3]PCR[35]
PC[4]PCR[36]
PC[5]PCR[37]
PC[6]PCR[38]
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
GPIO[35]
CS0_1
MA[0]
—
EIRQ[6]
GPIO[36]
—
—
—
SIN_1
EIRQ[18]
GPIO[37]
SOUT_1
—
—
EIRQ[7]
GPIO[38]
LIN1TX
—
—
SIUL
DSPI_1
ADC
—
SIUL
SIUL
—
—
—
DSPI_1
SIUL
SIUL
DSPI_1
—
—
SIUL
SIUL
LINFlex_1
—
—
I/O
I/O
O
—
I/O
—
—
—
I/O
O
—
—
I/O
O
—
—
STristate4977
I
MTristate6292
I
I
MTristate6191
I
STristate1625
Doc ID 16315 Rev 519/82
Package pinouts and signal descriptionsSPC560D30x, SPC560D40x
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PC[7]PCR[39]
PC[8]PCR[40]
PC[9]PCR[41]
PC[10]PCR[42]
Alternate
function
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
FunctionPeripheral
(1)
GPIO[39]
—
—
—
LIN1RX
WKPU[12]
(3)
GPIO[40]
LIN2TX
E0UC[3]
—
GPIO[41]
—
E0UC[7]
—
LIN2RX
WKPU[13]
(3)
GPIO[42]
—
—
MA[1]
SIUL
—
—
—
LINFlex_1
WKPU
SIUL
LINFlex_2
eMIOS_0
—
SIUL
—
eMIOS_0
—
LINFlex_2
WKPU
SIUL
—
—
ADC
I/O
direction
(2)
I/O
—
—
—
I
I
I/O
O
I/O
—
I/O
—
I/O
—
I
I
I/O
—
—
O
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
STristate1726
STristate6399
STristate22
MTristate1322
PC[11]PCR[43]
PC[12]PCR[44]
PC[13]PCR[45]
PC[14]PCR[46]
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
GPIO[43]
—
—
MA[2]
WKPU[5]
GPIO[44]
E0UC[12]
—
—
EIRQ[19]
GPIO[45]
E0UC[13]
—
—
GPIO[46]
E0UC[14]
—
—
EIRQ[8]
(3)
SIUL
—
—
ADC
WKPU
SIUL
eMIOS_0
—
—
SIUL
SIUL
eMIOS_0
—
—
SIUL
eMIOS_0
—
—
SIUL
I/O
—
—
O
I/O
I/O
—
—
I/O
I/O
—
—
I/O
I/O
—
—
STristate—21
I
MTristate—97
I
STristate—98
STristate—3
I
20/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage pinouts and signal descriptions
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PC[15]PCR[47]
PD[0]PCR[48]
PD[1]PCR[49]
PD[2]PCR[50]
PD[3]PCR[51]
PD[4]PCR[52]
PD[5]PCR[53]
Alternate
function
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
FunctionPeripheral
(1)
GPIO[47]
E0UC[15]
—
—
EIRQ[20]
GPIO[48]
—
—
—
WKPU[27]
(3)
ADC1_P[4]
GPIO[49]
—
—
—
WKPU[28]
(3)
ADC1_P[5]
GPIO[50]
—
—
—
ADC1_P[6]
GPIO[51]
—
—
—
ADC1_P[7]
GPIO[52]
—
—
—
ADC1_P[8]
GPIO[53]
—
—
—
ADC1_P[9]
SIUL
eMIOS_0
—
—
SIUL
Por t D
SIUL
—
—
—
WKPU
ADC
SIUL
—
—
—
WKPU
ADC
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
I/O
direction
(2)
I/O
I/O
—
—
I
I
—
—
—
I
I
I
—
—
—
I
I
I
—
—
—
I
I
—
—
—
I
I
—
—
—
I
I
—
—
—
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
MTristate—4
ITristate—41
ITristate—42
ITristate—43
ITristate—44
ITristate—45
ITristate—46
Doc ID 16315 Rev 521/82
Package pinouts and signal descriptionsSPC560D30x, SPC560D40x
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PD[6]PCR[54]
PD[7]PCR[55]
PD[8]PCR[56]
PD[9]PCR[57]
Alternate
function
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
FunctionPeripheral
(1)
GPIO[54]
—
—
—
ADC1_P[10]
GPIO[55]
—
—
—
ADC1_P[11]
GPIO[56]
—
—
—
ADC1_P[12]
GPIO[57]
—
—
—
ADC1_P[13]
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
I/O
direction
(2)
I
—
—
—
I
I
—
—
—
I
I
—
—
—
I
I
—
—
—
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
ITristate—47
ITristate—48
ITristate—49
ITristate—56
PD[10]PCR[58]
PD[11]PCR[59]
PD[12]PCR[60]
PD[13]PCR[61]
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
GPIO[58]
—
—
—
ADC1_P[14]
GPIO[59]
—
—
—
ADC1_P[15]
GPIO[60]
CS5_0
E0UC[24]
—
ADC1_S[8]
GPIO[61]
CS0_1
E0UC[25]
—
ADC1_S[9]
SIUL
—
—
—
ADC
SIUL
—
—
—
ADC
SIUL
DSPI_0
eMIOS_0
—
ADC
SIUL
DSPI_1
eMIOS_0
—
ADC
—
—
—
—
—
—
I/O
O
I/O
—
I/O
I/O
I/O
—
I
ITristate—57
I
I
ITristate—58
I
JTristate—60
I
JTristate—62
I
22/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage pinouts and signal descriptions
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PD[14]PCR[62]
PD[15]PCR[63]
PE[0]PCR[64]
PE[1]PCR[65]
PE[2]PCR[66]
PE[3]PCR[67]
PE[4]PCR[68]
PE[5]PCR[69]
Alternate
function
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
FunctionPeripheral
(1)
GPIO[62]
CS1_1
E0UC[26]
—
ADC1_S[10]
GPIO[63]
CS2_1
E0UC[27]
—
ADC1_S[11]
GPIO[64]
E0UC[16]
—
—
WKPU[6]
(3)
GPIO[65]
E0UC[17]
—
—
GPIO[66]
E0UC[18]
—
—
EIRQ[21]
SIN_1
GPIO[67]
E0UC[19]
SOUT_1
—
GPIO[68]
E0UC[20]
SCK_1
—
EIRQ[9]
GPIO[69]
E0UC[21]
CS0_1
MA[2]
SIUL
DSPI_1
eMIOS_0
—
ADC
SIUL
DSPI_1
eMIOS_0
—
ADC
Por t E
SIUL
eMIOS_0
—
—
WKPU
SIUL
eMIOS_0
—
—
SIUL
eMIOS_0
—
—
SIUL
DSPI_1
SIUL
eMIOS_0
DSPI_1
—
SIUL
eMIOS_0
DSPI_1
—
SIUL
SIUL
eMIOS_0
DSPI_1
ADC
I/O
direction
(2)
I/O
O
I/O
—
I
I/O
O
I/O
—
I
I/O
I/O
—
—
I
I/O
I/O
—
—
I/O
I/O
—
—
I
I
I/O
I/O
O
—
I/O
I/O
I/O
—
I
I/O
I/O
I/O
O
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
JTristate—64
JTristate—66
STristate—6
MTristate—8
MTristate—89
MTristate—90
MTristate—93
MTristate—94
Doc ID 16315 Rev 523/82
Package pinouts and signal descriptionsSPC560D30x, SPC560D40x
Table 6.Functional port pin descriptions (continued)
Port pinPCR
PE[6]PCR[70]
PE[7]PCR[71]
PE[8]PCR[72]
PE[9]PCR[73]
PE[10]PCR[74]
PE[11]PCR[75]
PE[12]PCR[76]
Alternate
function
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
AF0
AF1
AF2
AF3
—
—
FunctionPeripheral
(1)
GPIO[70]
E0UC[22]
CS3_0
MA[1]
EIRQ[22]
GPIO[71]
E0UC[23]
CS2_0
MA[0]
EIRQ[23]
GPIO[72]
—
E0UC[22]
—
GPIO[73]
—
E0UC[23]
—
WKPU[7]
(3)
GPIO[74]
—
CS3_1
—
EIRQ[10]
GPIO[75]
E0UC[24]
CS4_1
—
WKPU[14]
(3)
GPIO[76]
—
—
—
ADC1_S[7]
EIRQ[11]
SIUL
eMIOS_0
DSPI_0
ADC
SIUL
SIUL
eMIOS_0
DSPI_0
ADC
SIUL
SIUL
—
eMIOS_0
—
SIUL
—
eMIOS_0
—
WKPU
SIUL
—
DSPI_1
—
SIUL
SIUL
eMIOS_0
DSPI_1
—
WKPU
SIUL
—
—
—
ADC
SIUL
I/O
direction
(2)
I/O
I/O
O
O
I
I/O
I/O
O
O
I
I/O
—
I/O
—
I/O
—
I/O
—
I
I/O
—
O
—
I
I/O
I/O
O
—
I
I/O
—
—
—
I
I
Pin number
Pad
type
RESET
LQFP64 LQFP100
configuration
MTristate—95
MTristate—96
MTristate—9
STristate—10
STristate—11
STristate—13
STristate—76
Por t H
24/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage pinouts and signal descriptions
Table 6.Functional port pin descriptions (continued)
Pin number
LQFP64 LQFP100
Port pinPCR
Alternate
function
FunctionPeripheral
(1)
I/O
direction
(2)
Pad
type
RESET
configuration
AF0
PH[9]
(6)
PCR[121]
AF1
AF2
AF3
AF0
PH[10]
(6)
PCR[122]
AF1
AF2
AF3
1. Alternate functions are chosen by setting the values of the PCR.PA bitfields inside the SIUL module. PCR.PA = 00 → AF0;
PCR.PA = 01 → AF1; PCR.PA = 10 → AF2; PCR.PA = 11 → AF3. This is intended to select the output functions; to use
one of the input functions, the PCR.IBE bit must be written to ‘1’, regardless of the values selected in the PCR.PA bitfields.
For this reason, the value corresponding to an input only function is reported as “—”.
2. Multiple inputs are routed to all respective modules internally. The input of some modules must be configured by setting the
values of the PSMIO.PADSELx bitfields inside the SIUL module.
3. All WKPU pins also support external interrupt capability. See “wakeup unit” chapter of the device reference manual for
further details.
4. NMI has higher priority than alternate function. When NMI is selected, the PCR.AF field is ignored.
5. “Not applicable” because these functions are available only while the device is booting. Refer to “BAM” chapter of the
device reference manual for details.
6. Out of reset all the functional pins except PC[0:1] and PH[9:10] are available to the user as GPIO.
PC[0:1] are available as JTAG pins (TDI and TDO respectively).
PH[9:10] are available as JTAG pins (TCK and TMS respectively).
If the user configures these JTAG pins in GPIO mode the device is no longer compliant with IEEE 1149.1 2001.
GPIO[121]
—
TCK
—
GPIO[122]
—
TMS
—
SIUL
—
JTAGC
—
SIUL
—
JTAGC
—
I/O
—
—
I/O
—
—
Input,
S
I
weak pull-
up
6088
Input,
S
I
weak pull-
up
5381
Doc ID 16315 Rev 525/82
Electrical characteristicsSPC560D30x, SPC560D40x
4 Electrical characteristics
4.1 Introduction
This section contains electrical characteristics of the device as well as temperature and
power considerations.
This product contains devices to protect the inputs against damage due to high static
voltages. However, it is advisable to take precautions to avoid application of any voltage
higher than the specified maximum rated voltages.
To enhance reliability, unused inputs can be driven to an appropriate logic voltage level (V
or V
). This can be done by the internal pull-up or pull-down, which is provided by the
SS
product for most general purpose pins.
The parameters listed in the following tables represent the characteristics of the device and
its demands on the system.
In the tables where the device logic provides signals with their respective timing
characteristics, the symbol “CC” for Controller Characteristics is included in the Symbol
column.
In the tables where the external system must provide signals with their respective timing
characteristics to the device, the symbol “SR” for System Requirement is included in the
Symbol column.
Caution:All of the following parameter values can vary depending on the application and must be
confirmed during silicon validation, silicon characterization or silicon reliability trial.
4.2 Parameter classification
The electrical parameters shown in this supplement are guaranteed by various methods. To
give the customer a better understanding, the classifications listed in Ta bl e 7 are used and
the parameters are tagged accordingly in the tables where appropriate.
Table 7.Parameter classifications
DD
Classification tagTag description
PThose parameters are guaranteed during production testing on each individual device.
C
T
DThose parameters are derived mainly from simulations.
Those parameters are achieved by the design characterization by measuring a statistically
relevant sample size across process variations.
Those parameters are achieved by design characterization on a small sample size from typical
devices under typical conditions unless otherwise noted. All values shown in the typical
column are within this category.
Note:The classification is shown in the column labeled “C” in the parameter tables where
appropriate.
26/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xElectrical characteristics
4.3 NVUSRO register
Bit values in the Non-Volatile User Options (NVUSRO) Register control portions of the
device configuration, namely electrical parameters such as high voltage supply and
oscillator margin, as well as digital functionality (watchdog enable/disable after reset).
For a detailed description of the NVUSRO register, please refer to the device reference
manual.
4.3.1 NVUSRO[PAD3V5V] field description
The DC electrical characteristics are dependent on the PAD3V5V bit value. Ta bl e 8 shows
how NVUSRO[PAD3V5V] controls the device configuration.
Table 8.PAD3V5V field description
(1)
Value
0High voltage supply is 5.0 V
1High voltage supply is 3.3 V
1. Default manufacturing value is ‘1’. Value can be programmed by customer in Shadow Flash.
Description
4.3.2 NVUSRO[OSCILLATOR_MARGIN] field description
The fast external crystal oscillator consumption is dependent on the
OSCILLATOR_MARGIN bit value. Ta bl e 9 shows how NVUSRO[OSCILLATOR_MARGIN]
controls the device configuration.
Table 9.OSCILLATOR_MARGIN field description
(1)
Value
0Low consumption configuration (4 MHz/8 MHz)
1High margin configuration (4 MHz/16 MHz)
1. Default manufacturing value is ‘1’. Value can be programmed by customer in Shadow Flash.
Description
4.3.3 NVUSRO[WATCHDOG_EN] field description
The watchdog enable/disable configuration after reset is dependent on the
WATCHDOG_EN bit value. Tab le 9 shows how NVUSRO[WATCHDOG_EN] controls the
device configuration.
Table 10.WATCHDOG_EN field description
(1)
Value
0Disable after reset)
1Enable after reset
1. Default manufacturing value is ‘1’. Value can be programmed by customer in Shadow Flash.
Description
Doc ID 16315 Rev 527/82
Electrical characteristicsSPC560D30x, SPC560D40x
4.4 Absolute maximum ratings
Table 11.Absolute maximum ratings
SymbolParameterConditions
V
V
SR Digital ground on VSS_HV pins—00V
SS
Voltage on VDD_HV pins with respect
SR
DD
to ground (V
SS
)
Voltage on VSS_LV (low voltage digital
SR
V
SS_LV
V
DD_BV
supply) pins with respect to ground
)
(V
SS
Voltage on VDD_BV (regulator supply)
SR
pin with respect to ground (V
SS
)
Relative to V
DD
Voltage on VSS_HV_ADC (ADC
V
SS_ADC
SR
reference) pin with respect to ground
)
(V
SS
Voltage on VDD_HV_ADC (ADC
V
DD_ADC
I
INJPAD
I
INJSUM
I
AVGSEG
I
CORELV
T
STORAGE
1. Supply segments are described in Section 4.7.5: I/O pad current specification.
SR
reference) pin with respect to ground
)
(V
SS
V
IN
Voltage on any GPIO pin with respect to
SR
ground (V
Injected input current on any pin during
SR
overload condition
Absolute sum of all injected input
SR
currents during overload condition
Sum of all the static I/O current within a
SR
supply segment
Low voltage static current sink through
SR
VDD_BV
SS
)
(1)
Relative to V
Relative to V
V
= 5.0 V ± 10%, PAD3V5V = 0—70
DD
= 3.3 V ± 10%, PAD3V5V = 1—64
V
DD
DD
DD
SR Storage temperature—−55150°C
Value
Unit
MinMax
—−0.36.0V
—V
− 0.1 VSS+0.1 V
SS
—−0.36.0
V
VDD− 0.3 VDD+0.3
—V
− 0.1 VSS+0.1 V
SS
—−0.36.0
V
VDD− 0.3 VDD+0.3
—−0.36.0
V
VDD− 0.3 VDD+0.3
—−1010mA
—−5050mA
mA
——150mA
Note:Stresses exceeding the recommended absolute maximum ratings may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification are not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability. During overload conditions (V
the voltage on pins with respect to ground (V
28/82Doc ID 16315 Rev 5
SS
) must not exceed the recommended values.
IN>VDD
or VIN<VSS),
SPC560D30x, SPC560D40xElectrical characteristics
4.5 Recommended operating conditions
Table 12.Recommended operating conditions (3.3 V)
Val ue
SymbolCParameterConditions
MinMax
V
V
DD
V
SS_LV
V
DD_BV
V
SS_ADC
V
DD_ADC
V
I
INJPAD
I
INJSUM
TV
1. 100 nF capacitance needs to be provided between each VDD/VSS pair.
2. 330 nF capacitance needs to be provided between each V
3. 470 nF capacitance needs to be provided between V
depending on external regulator characteristics).
4. 100 nF capacitance needs to be provided between V
5. Full electrical specification cannot be guaranteed when voltage drops below 3.0 V. In particular, ADC electrical
characteristics and I/Os DC electrical specification may not be guaranteed. When voltage drops below V
reset.
6. Guaranteed by device validation.
SR — Digital ground on VSS_HV pins—00V
SS
(1)
SR —
(2)
SR —
(3)
SR —
SR —
SR —
(4)
SR —
IN
SR —
SR —
SR — VDD slope to ensure correct power up
DD
SR — Ambient temperature under biasf
T
A
SR — Junction temperature under bias—−40150
T
J
Voltage on VDD_HV pins with respect to ground
)
(V
SS
Voltage on VSS_LV (low voltage digital supply)
pins with respect to ground (V
SS
)
Voltage on VDD_BV pin (regulator supply) with
respect to ground (V
SS
)
Voltage on VSS_HV_ADC (ADC reference) pin
with respect to ground (V
SS
)
Voltage on VDD_HV_ADC pin (ADC reference)
with respect to ground (V
SS
)
Voltage on any GPIO pin with respect to ground
)
(V
SS
Injected input current on any pin during overload
condition
Absolute sum of all injected input currents during
overload condition
(6)
DD_LV/VSS_LV
and the nearest V
DD_BV
DD_ADC/VSS_ADC
pair.
Relative to V
Relative to V
Relative to V
≤ 48 MHz−40125
CPU
supply pair.
SS_LV
—3.03.6V
—V
− 0.1 VSS+0.1 V
SS
—3.03.6
DDVDD
—V
—3.0
DDVDD
—V
DD
− 0.1 VDD+0.1
− 0.1 VSS+0.1 V
SS
(5)
− 0.1 VDD+0.1
− 0.1—
SS
—VDD+0.1
—−55mA
—−5050mA
——0.25V/µs
(higher value may be needed
LVDHVL,
Unit
V
3.6
V
V
°C
device is
Doc ID 16315 Rev 529/82
Electrical characteristicsSPC560D30x, SPC560D40x
Table 13.Recommended operating conditions (5.0 V)
Val ue
SymbolCParameterConditions
MinMax
Unit
SS
(1)
(3)
S
— Digital ground on VSS_HV pins—00V
R
S
Voltage on VDD_HV pins with respect to
—
R
ground (VSS)
S
Voltage on VSS_LV (low voltage digital
—
R
supply) pins with respect to ground (VSS)
—4.55.5
Voltage drop
(2)
—V
3.05.5
− 0.1VSS+0.1V
SS
V
V
SS_LV
V
DD
—4.55.5
V
DD_BV
V
SS_ADC
(4)
Voltage on VDD_BV pin (regulator supply)
—
R
with respect to ground (VSS)
S
Voltage on VSS_HV_ADC (ADC reference)
—
R
pin with respect to ground (V
Relative to V
SS
(2)
DD
—V
3.05.5
VDD− 0.1VDD+0.1
− 0.1VSS+0.1V
SS
S
—4.55.5
V
DD_ADC
(5)
V
I
INJPAD
I
INJSUM
TV
T
T
1. 100 nF capacitance needs to be provided between each VDD/VSS pair.
2. Full device operation is guaranteed by design when the voltage drops below 4.5 V down to 3.6 V. However, certain analog
electrical characteristics will not be guaranteed to stay within the stated limits.
3. 330 nF capacitance needs to be provided between each V
4. 470 nF capacitance needs to be provided between V
depending on external regulator characteristics).
5. 100 nF capacitance needs to be provided between V
6. Guaranteed by device validation
IN
DD
A
J
S
Voltage on VDD_HV_ADC pin (ADC
—
R
reference) with respect to ground (VSS)
Relative to V
S
Voltage on any GPIO pin with respect to
—
R
ground (V
S
Injected input current on any pin during
—
R
overload condition
S
Absolute sum of all injected input currents
—
R
during overload condition
S
R
S
R
S
R
slope to ensure correct power up
—V
DD
— Ambient temperature under biasf
— Junction temperature under bias—−40150
SS
)
(6)
DD_LV/VSS_LV
and the nearest V
DD_BV
DD_ADC/VSS_ADC
Relative to V
≤ 48 MHz−40125
CPU
supply pair.
pair.
(2)
DD
—V
DD
3.05.5
VDD− 0.1VDD+0.1
− 0.1—
SS
—VDD+0.1
—−55
—−5050
——0.25V/µs
(higher value may be needed
SS_LV
V
VVoltage drop
VVoltage drop
V
mA
°C
Note:SRAM data retention is guaranteed with V
DD_LV
30/82Doc ID 16315 Rev 5
not below 1.08 V.
SPC560D30x, SPC560D40xElectrical characteristics
4.6 Thermal characteristics
4.6.1 Package thermal characteristics
Table 14.LQFP thermal characteristics
SymbolCParameterConditions
(1)
(2)
Value
(3)
Unit
LQFP6472.1
Single-layer board —1s
C
R
θJA
C
Thermal resistance, junction-to-ambient
D
natural convection
(4)
LQFP10065.2
°C/W
LQFP6457.3
Four-layer board — 2s2p
LQFP10051.8
C
R
θJB
D Thermal resistance, junction-to-board
C
(5)
Four-layer board — 2s2p
LQFP6444.1
°C/W
LQFP10041.3
LQFP6426.5
Single-layer board — 1s
C
R
θJC
D Thermal resistance, junction-to-case
C
(6)
LQFP10023.9
°C/W
LQFP6426.2
Four-layer board — 2s2p
LQFP10023.7
LQFP6441
C
Ψ
JB
C
Junction-to-board thermal
D
characterization parameter, natural
convection
Single-layer board — 1s
LQFP10041.6
°C/W
LQFP6443
Four-layer board — 2s2p
LQFP10043.4
LQFP6411.5
Single-layer board — 1s
C
Ψ
JC
C
Junction-to-case thermal characterization
D
parameter, natural convection
LQFP10010.4
°C/W
LQFP6411.1
Four-layer board — 2s2p
LQFP10010.2
1. Thermal characteristics are targets based on simulation that are subject to change per device characterization.
= 3.3 V ± 10% / 5.0 V ± 10%, TA = –40 to 125 °C
2. V
DD
3. All values need to be confirmed during device validation.
4. Junction-to-ambient thermal resistance determined per JEDEC JESD51-3 and JESD51-7. Thermal test board meets
JEDEC specification for this package. When Greek letters are not available, the symbols are typed as R
5. Junction-to-board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification for
the specified package. When Greek letters are not available, the symbols are typed as R
6. Junction-to-case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is
used for the case temperature. Reported value includes the thermal resistance of the interface layer. When Greek letters
are not available, the symbols are typed as R
thJC
.
thJB
.
thJA
.
Doc ID 16315 Rev 531/82
Electrical characteristicsSPC560D30x, SPC560D40x
4.6.2 Power considerations
The average chip-junction temperature, TJ, in degrees Celsius, may be calculated using
Equation 1:
Equation 1: T
= TA + (PD x R
J
θJA
)
Where:
T
is the ambient temperature in °C.
A
R
is the package junction-to-ambient thermal resistance, in °C/W.
θJA
P
is the sum of P
D
P
is the product of I
INT
INT
and P
and VDD, expressed in watts. This is the chip internal
DD
I/O (PD
= P
INT
+ P
I/O
).
power.
P
represents the power dissipation on input and output pins; user determined.
I/O
Most of the time for the applications, P
P
may be significant, if the device is configured to continuously drive external modules
I/O
I/O< PINT
and may be neglected. On the other hand,
and/or memories.
An approximate relationship between P
Equation 2: P
= K / (TJ + 273 °C)
D
and TJ (if P
D
is neglected) is given by:
I/O
Therefore, solving equations Equation 1 and Equation 2:
Equation 3: K = P
x (TA + 273 °C) + R
D
θJA
x P
2
D
Where:
K is a constant for the particular part, which may be determined from Equation 3
by measuring P
of P
and TJ may be obtained by solving equations Equation 1 and Equation 2
D
iteratively for any value of T
(at equilibrium) for a known TA. Using this value of K, the values
D
.
A
4.7 I/O pad electrical characteristics
4.7.1 I/O pad types
The device provides four main I/O pad types depending on the associated alternate
functions:
●Slow pads—These pads are the most common pads, providing a good compromise
between transition time and low electromagnetic emission.
●Medium pads—These pads provide transition fast enough for the serial communication
channels with controlled current to reduce electromagnetic emission.
●Input only pads—These pads are associated to ADC channels (ADC_P[X]) providing
low input leakage.
Medium pads can use slow configuration to reduce electromagnetic emission except for
PC[1], that is medium only, at the cost of reducing AC performance.
4.7.2 I/O input DC characteristics
Ta bl e 1 5 provides input DC electrical characteristics as described in Figure 4.
32/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xElectrical characteristics
Figure 4.Input DC electrical characteristics definition
V
IN
V
DD
V
IH
V
HYS
V
IL
(GPDI register of SIUL)
Table 15.I/O input DC electrical characteristics
SymbolCParameterConditions
PDIx = ‘1’
PDIx = ‘0’
(1)
Value
(2)
MinTypMax
Input high level CMOS (Schmitt
SR P
V
V
I
IH
HYS
LKG
Trigger)
Input hysteresis CMOS (Schmitt
CC C
Trigger)
DT
CCDDigital input leakage
DT
DT
No
injection
on
adjacent
pin
PT
(3)
W
W
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. All values need to be confirmed during device validation.
3. In the range from 40 to 1000 ns, pulses can be filtered or not filtered, according to operating temperature and voltage.
SR P Digital input filtered pulse———40ns
FI
(3)
SR P Digital input not filtered pulse—1000——ns
NFI
—0.65V
—0.1V
= −40 °C—2200
T
A
= 25 °C—2200
A
= 85 °C—5300
A
= 105 °C—12500
A
= 125 °C—701000
A
—VDD+0.4
DD
——
DD
DD
Unit
VVILSR P Input low level CMOS (Schmitt Trigger)—−0.4—0.35V
nA
Doc ID 16315 Rev 533/82
Electrical characteristicsSPC560D30x, SPC560D40x
4.7.3 I/O output DC characteristics
The following tables provide DC characteristics for bidirectional pads:
●Ta bl e 1 6 provides weak pull figures. Both pull-up and pull-down resistances are
supported.
●Ta bl e 1 7 provides output driver characteristics for I/O pads when in SLOW
configuration.
●Ta bl e 1 8 provides output driver characteristics for I/O pads when in MEDIUM
configuration.
Table 16.I/O pull-up/pull-down DC electrical characteristics
SymbolCParameterConditions
P
= VIL, VDD = 5.0 V ± 10%
V
|I
WPU
|CC
Weak pull-up current
absolute value
PV
IN
= VIL, VDD = 3.3 V ± 10% PAD3V5V = 110—150
IN
P
V
= VIH, VDD = 5.0 V ± 10%
|I
WPD
|CC
Weak pull-down current
absolute value
PV
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. The configuration PAD3V5 = 1 when V
configured in input or in high impedance state.
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. All values need to be confirmed during device validation.
3. This is a transient configuration during power-up, up to the end of reset PHASE2 (refer to RGM module section of the
4. C
5. The configuration PAD3V5 = 1 when V
SR P
FRST
SR P
NFRST
|CCP
WPU
device reference manual).
includes device and package capacitance (C
L
configured in input or in high impedance state.
input filtered
pulse
input not filtered
RESET
pulse
Weak pull-up current
absolute value
L
V
= 5.0 V ± 10%, PAD3V5V = 0
DD
= 25 pF,
C
L
= 3.3 V ± 10%, PAD3V5V = 1
V
DD
= 50 pF,
C
L
V
= 3.3 V ± 10%, PAD3V5V = 1
DD
C
= 100 pF,
L
V
= 3.3 V ± 10%, PAD3V5V = 1
DD
———40ns
—1000——ns
V
= 3.3 V ± 10%, PAD3V5V = 110—150
DD
= 5.0 V ± 10%, PAD3V5V = 010—150
DD
V
= 5.0 V ± 10%, PAD3V5V = 1
DD
<5pF).
PKG
= 5 V is only transient configuration during power-up. All pads but RESET are
DD
(5)
Value
Unit
——10
——20
——40
ns
——12
——25
——40
µAV
10—250
4.9 Power management electrical characteristics
4.9.1 Voltage regulator electrical characteristics
The device implements an internal voltage regulator to generate the low voltage core supply
V
common I/O supply V
●HV: High voltage external power supply for voltage regulator module. This must be
●BV: High voltage external power supply for internal ballast module. This must be
●LV: Low voltage internal power supply for core, FMPLL and flash digital logic. This is
42/82Doc ID 16315 Rev 5
from the high voltage ballast supply V
DD_LV
. The following supplies are involved:
DD
provided externally through V
provided externally through V
V
.
DD
power pin.
DD
power pin. Voltage values should be aligned with
DD_BV
. The regulator itself is supplied by the
DD_BV
generated by the internal voltage regulator but provided outside to connect stability
SPC560D30x, SPC560D40xElectrical characteristics
capacitor. It is further split into four main domains to ensure noise isolation between
critical LV modules within the device:
–LV_COR: Low voltage supply for the core. It is also used to provide supply for
FMPLL through double bonding.
–LV_CFLA: Low voltage supply for code flash module. It is supplied with dedicated
ballast and shorted to LV_COR through double bonding.
–LV_DFLA: Low voltage supply for data flash module. It is supplied with dedicated
ballast and shorted to LV_COR through double bonding.
–LV_PLL: Low voltage supply for FMPLL. It is shorted to LV_COR through double
bonding.
Figure 7.Voltage regulator capacitance connection
C
(LV_COR/LV_CFLA)
REG2
V
DD
V
DD_BV
V
DD_LVn
V
SS_LVn
V
SS_LV
V
REF
Voltage Regulator
I
(Ballast decoupling)
DEC1
C
(LV_COR/LV_DFLA)
REG1
C
DEVICE
V
DD_BV
V
DD_LV
V
SS_LV
V
SS_LV
C
V
REG3
The internal voltage regulator requires external capacitance (C
DD_LV
REGn
V
DD_LV
DEVICE
C
DEC2
V
DD
V
SS
(supply/IO decoupling)(LV_COR/LV_PLL)
) to be connected to the
device in order to provide a stable low voltage digital supply to the device. Capacitances
should be placed on the board as near as possible to the associated pins. Care should also
be taken to limit the serial inductance of the board to less than 5 nH.
Each decoupling capacitor must be placed between each of the three V
DD_LV/VSS_LV
pairs to ensure stable voltage (see Section 4.5: Recommended operating conditions).
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. This capacitance value is driven by the constraints of the external voltage regulator supplying the V
value is in the range of 470 nF.
3. This value is acceptable to guarantee operation from 4.5 V to 5.5 V.
4. External regulator and capacitance circuitry must be capable of providing I
operating range.
5. In-rush average current is seen only for short time during power-up and on standby exit (maximum 20 µs, depending on
external capacitances to be loaded).
6. The duration of the in-rush current depends on the capacitance placed on LV pins. BV decoupling capacitors must be sized
accordingly. Refer to I
Internal voltage regulator external
SR —
capacitance
Stability capacitor equivalent serial
SR —
resistance
SR — Decoupling capacitance
Decoupling capacitance regulator
SR —
supply
CCTMain regulator output voltage
PAfter trimming1.161.28—
Main regulator current provided to
SR —
CC D
domain
V
DD_LV
Main regulator module current
consumption
(2)
ballast
Range:
10 kHz to 20 MHz
V
DD_BV/VSS_LV
V
DD_BV
V
DD_BV/VSS_LV
V
DD_BV
VDD/VSS pair10100—nF
Before exiting from reset—1.32—
I
MREG
I
MREG
—200—500nF
——0.2W
pair:
= 4.5 V to 5.5 V
pair:
= 3V to 3.6V
(3)
100
(4)
470
400—
———150mA
= 200 mA——2
= 0 mA——1
—
CC P Low-power regulator output voltageAfter trimming1.161.28—V
Low power regulator current provided
SR —
to V
D
Low-power regulator module current
CC
consumption
—
Ultra low power regulator output
CC P
voltage
Ultra low power regulator current
SR —
provided to V
Ultra low power regulator module
CC D
current consumption
In-rush average current on V
CC D
during power-up
domain
DD_LV
domain
DD_LV
(5)
value for minimum amount of current to be provided in cc.
MREG
DD_BV
I
LPREG
TA = 55 °C
I
LPREG
= 55 °C
T
A
After trimming1.161.28—V
I
ULPREG
= 55 °C
T
A
I
ULPREG
T
= 55 °C
A
———15mA
= 15 mA;
= 0 mA;
——
—
5—
600
———5mA
= 5 mA;
= 0 mA;
——
—
2—
100
———300
voltage. A typical
DD_BV
while maintaining supply V
DD_BV
DD_BV
(6)
in
Unit
nF
V
mA
µA
µA
mA
44/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xElectrical characteristics
4.9.2 Low voltage detector electrical characteristics
The device implements a power-on reset (POR) module to ensure correct power-up
initialization, as well as five low voltage detectors (LVDs) to monitor the V
voltage while device is supplied:
●POR monitors V
during the power-up phase to ensure device is maintained in a safe
DD
reset state (refer to RGM Destructive Event Status (RGM_DES) Register flag F_POR
in device reference manual)
●LVDHV3 monitors V
to ensure device reset below minimum functional supply (refer
DD
to RGM Destructive Event Status (RGM_DES) Register flag F_LVD27 in device
reference manual)
●LVDHV3B monitors V
to ensure device reset below minimum functional supply
DD_BV
(refer to RGM Destructive Event Status (RGM_DES) Register flag F_LVD27_VREG in
device reference manual)
●LVDHV5 monitors V
when application uses device in the 5.0 V ± 10% range (refer to
DD
RGM Functional Event Status (RGM_FES) Register flag F_LVD45 in device reference
manual)
●LVDLVCOR monitors power domain No. 1 (refer to RGM Destructive Event Status
(RGM_DES) Register flag F_LVD12_PD1 in device reference manual)
●LVDLVBKP monitors power domain No. 0 (refer to RGM Destructive Event Status
(RGM_DES) Register flag F_LVD12_PD0 in device reference manual)
and the V
DD
DD_LV
Figure 8.Low voltage detector vs reset
V
DD
V
LVDHVxH
V
LVDHVxL
RESET
Doc ID 16315 Rev 545/82
Electrical characteristicsSPC560D30x, SPC560D40x
Table 25.Low voltage detector electrical characteristics
SymbolCParameterConditions
V
PORUP
V
PORH
V
LV DH V 3H
V
LV DH V 3L
V
LVDHV3BH
V
LVDHV3BL
V
LV DH V 5H
V
LV DH V 5L
V
LV DLV C OR L
V
LVDLVBKPL
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
SR P Supply for functional POR module
CC P Power-on reset threshold1.5—2.6
CC T LVDHV3 low voltage detector high threshold——2.95
CC P LVDHV3 low voltage detector low threshold2.7—2.9
CC P LVDHV3B low voltage detector high threshold——2.95
CC P LVDHV3B low voltage detector low threshold2.7—2.9
= 25 °C,
T
A
after trimming
CC T LVDHV5 low voltage detector high threshold——4.5
CC P LVDHV5 low voltage detector low threshold3.8—4.4
CC P LVDLVCOR low voltage detector low threshold1.08—1.16
CC P LVDLVBKP low voltage detector low threshold1.08—1.16
4.10 Power consumption
(1)
MinTypMax
1.0—5.5
Val ue
Unit
V
Ta bl e 2 6 provides DC electrical characteristics for significant application modes. These
values are indicative values; actual consumption depends on the application.
Table 26.Power consumption on VDD_BV and VDD_HV
SymbolCParameterConditions
I
DDMAX
I
DDRUN
I
DDHALT
I
DDSTOP
(2)
RUN mode maximum
CC D
average current
T
Tf
(4)
RUN mode typical
CC
average current
Tf
Pf
CCCHALT mode current
PT
DT
CCPSTOP mode current
DT
PT
(5)
f
= 8 MHz—7—
CPU
= 16 MHz—18—
CPU
= 32 MHz—29—
CPU
= 48 MHz—40100
CPU
Slow internal RC oscillator
(6)
(128 kHz) running
Slow internal RC oscillator
(7)
(128 kHz) running
(1)
Value
MinTypMax
——90130
=25°C—815
T
A
= 125 °C—1425
A
T
= 25 °C—180 700
A
= 55 °C—500—
A
=85°C—16
A
= 105 °C—29
A
= 125 °C—4.512
A
Unit
(3)
mA
mA
mA
(8)
µA
(8)
(8)
mADT
(8)
46/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xElectrical characteristics
Table 26.Power consumption on VDD_BV and VDD_HV (continued)
Value
SymbolCParameterConditions
(1)
MinTypMax
= 25 °C—30100
T
A
DT
Slow internal RC oscillator
I
DDSTDBY
CCPSTANDBY mode current
DT
(9)
(128 kHz) running
DT
PT
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. Running consumption does not include I/Os toggling which is highly dependent on the application. The given value is
thought to be a worst case value with all peripherals running, and code fetched from code flash while modify operation
ongoing on data flash. Notice that this value can be significantly reduced by application: switch off not used peripherals
(default), reduce peripheral frequency through internal prescaler, fetch from RAM most used functions, use low power
mode when possible.
3. Higher current may be sinked by device during power-up and standby exit. Please refer to in-rush average current on
Table 24.
4. RUN current measured with typical application with accesses on both flash memory and SRAM.
5. Only for the “P” classification: Code fetched from SRAM: serial IPs CAN and LIN in loop-back mode, DSPI as Master, PLL
as system clock (3 × Multiplier) peripherals on (eMIOS/CTU/ADC) and running at maximum frequency, periodic SW/WDG
timer reset enabled.
6. Data flash power down. Code flash in low power. SIRC (128 kHz) and FIRC (16 MHz) on. 10 MHz XTAL clock. FlexCAN: 0
ON (clocked but no reception or transmission). LINFlex: instances: 0, 1, 2 ON (clocked but no reception or transmission),
instance: 3 clocks gated. eMIOS: instance: 0 ON (16 channels on PA[0]–PA[11] and PC[12]–PC[15]) with PWM 20 kHz,
instance: 1 clock gated. DSPI: instance: 0 (clocked but no communication). RTC/API ON.PIT ON. STM ON. ADC ON but
no conversion except 2 analog watchdogs.
7. Only for the “P” classification: No clock, FIRC (16 MHz) off, SIRC (128 kHz) on, PLL off, HPVreg off, ULPVreg/LPVreg on.
All possible peripherals off and clock gated. Flash in power down mode.
8. When going from RUN to STOP mode and the core consumption is > 6 mA, it is normal operation for the main regulator
module to be kept on by the on-chip current monitoring circuit. This is most likely to occur with junction temperatures
exceeding 125 °C and under these circumstances, it is possible for the current to initially exceed the maximum STOP
specification by up to 2 mA. After entering stop, the application junction temperature will reduce to the ambient level and
the main regulator will be automatically switched off when the load current is below 6 mA.
9. Only for the “P” classification: ULPVreg on, HP/LPVreg off, 16 KB SRAM on, device configured for minimum consumption,
all possible modules switched off.
=55°C—75—
A
= 85 °C—180700
A
= 105 °C—3151000
A
= 125 °C—5601700
A
Unit
µA
4.11 Flash memory electrical characteristics
The data flash operation depends strongly on the code flash operation. If code flash is
switched-off, the data flash is disabled.
4.11.1 Program/Erase characteristics
Ta bl e 2 7 shows the program and erase characteristics.
Doc ID 16315 Rev 547/82
Electrical characteristicsSPC560D30x, SPC560D40x
Table 27.Program and erase specifications (code flash)
Value
SymbolCParameter
MinTyp
t
dwprogram
t
16Kpperase
t
32Kpperase
t
128Kpperase
t
esus
1. Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change
pending device characterization.
3. The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values
are characterized but not guaranteed.
4. Actual hardware programming times. This does not include software overhead.
Table 28.Program and erase specifications (data flash)
Double word (64 bits) program time
16 KB block preprogram and erase time—3005005000ms
CC C
32 KB block preprogram and erase time—4006005000ms
128 KB block preprogram and erase time—80013007500ms
Erase suspend latency——3030µs
(4)
—2250500µs
(1)
Initial
max
(2)
Max
(3)
Val ue
SymbolCParameter
MinTyp
t
swprogram
t
16Kpperase
t
Bank_D
1. Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change
pending device characterization.
3. The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values
are characterized but not guaranteed.
4. Actual hardware programming times. This does not include software overhead.
Single word (32 bits) program time
C
C
16 KB block preprogram and erase time—7008001500ms
C
64 KB block preprogram and erase time—190023004800ms
(4)
—3070300µs
(1)
Initial
max
(2)
Max
(3)
Unit
Unit
Table 29.Flash module life
SymbolCParameterConditions
16 KB blocks100——
128 KB blocks1100
P/ECC C
Number of program/erase cycles per
block over the operating temperature
range (T
)
J
48/82Doc ID 16315 Rev 5
Value
MinTypMax
(1)
—
(1)
—
Unit
kcycles32 KB blocks10100
SPC560D30x, SPC560D40xElectrical characteristics
Table 29.Flash module life (continued)
Value
SymbolCParameterConditions
MinTypMax
Unit
Retention CC C
Minimum data retention at 85 °C
average ambient temperature
(2)
Blocks with
0–1000 P/E cycles
Blocks with
1001–10000 P/E cycles
20——
10——
Blocks with
10001–100000 P/E
5——
cycles
1. To be confirmed.
2. Ambient temperature averaged over application duration. It is recommended not to exceed the product operating
temperature range.
ECC circuitry provides correction of single bit faults and is used to improve further
automotive reliability results. Some units will experience single bit corrections throughout
the life of the product with no impact to product reliability.
Table 30.Flash memory read access timing
SymbolCParameter
f
CFREAD
f
DFREAD
Conditions
(1)
P
Maximum working frequency for reading code flash memory at given
CC
number of wait states in worst conditions
C0 wait states20
Maximum working frequency for reading data flash memory at given
CC P
number of wait states in worst conditions
2 wait states48
6 wait states48 MHz
years
Max Unit
MHz
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
4.11.2 Flash power supply DC characteristics
Ta bl e 3 1 shows the power supply DC characteristics on external supply.
Note:Power supply for data flash is actually provided by code flash; this means that data flash
cannot work if code flash is not powered.
Table 31.Flash power supply DC electrical characteristics
SymbolCParameterConditions
I
CFREAD
I
DFREAD
I
CFMOD
I
DFMOD
Sum of the current consumption on
CC D
V
DDHV
and V
on read access
DDBV
Sum of the current consumption on
CC D
V
DDHV
and V
DDBV
on matrix
modification (program/erase)
(2)
(1)
Value
Min Typ Max
Flash module read
= 48 MHz
f
CPU
Program/Erase on-going
Code flash——33
Data flash——4
Code flash——33
while reading flash registers,
f
CPU
= 48 MHz
Data flash——6
Doc ID 16315 Rev 549/82
Unit
mA
mA
Electrical characteristicsSPC560D30x, SPC560D40x
Table 31.Flash power supply DC electrical characteristics (continued)
(2)
Value
Unit
SymbolCParameterConditions
(1)
Min Typ Max
Sum of the current consumption on
I
FLPW
CC D
V
DDHV
and V
DDBV
during
—Code flash—— 910 µA
flash low-power mode
I
CFPWD
I
DFPWD
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. All values need to be confirmed during device validation.
Sum of the current consumption on
CC D
V
DDHV
and V
DDBV
during
flash power-down mode
—
Code flash—— 125
µA
Data flash——25
4.11.3 Start-up/Switch-off timings
Table 32.Start-up time/Switch-off time
SymbolCParameterConditions
(1)
Value
MinTypMax
t
FLARSTEXIT
t
FLALPEXIT
t
FLAPDEXIT
t
FLALPENTRY
t
FLAPDENTRY
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
Susceptibility tests are performed on a sample basis during product characterization.
4.12.1 Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
50/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xElectrical characteristics
Therefore it is recommended that the user apply EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
●Software recommendations − The software flowchart must include the management of
runaway conditions such as:
–Corrupted program counter
–Unexpected reset
–Critical data corruption (control registers...)
●Prequalification trials − Most of the common failures (unexpected reset and program
counter corruption) can be reproduced by manually forcing a low state on the reset pin
or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device. When
unexpected behavior is detected, the software can be hardened to prevent
unrecoverable errors occurring (see the application note Software Techniques For Improving Microcontroller EMC Performance (AN1015)).
4.12.2 Electromagnetic interference (EMI)
The product is monitored in terms of emission based on a typical application. This emission
test conforms to the IEC 61967-1 standard, which specifies the general conditions for EMI
measurements.
Table 33.EMI radiated emission measurement
(1)(2)
Value
Symbol CParameterConditions
Min Typ Max
—SR — Scan range—0.150 —1000 MHz
SR — Operating frequency——48—MHz
f
CPU
V
1. EMI testing and I/O port waveforms per IEC 61967-1, -2, -4.
2. For information on conducted emission and susceptibility measurement (norm IEC 61967-4), please contact your local
3. All values need to be confirmed during device validation.
SR — LV operating voltages——1.28—V
DD_LV
No PLL frequency
modulation
± 2% PLL frequency
modulation
——18 dBµV
——14
S
CC T Peak level
EMI
marketing representative.
= 5V, TA=25°C,
V
DD
LQFP100 package
Test conforming to IEC 61967-2,
f
OSC
= 8 MHz/f
= 48 MHz
CPU
(3)
4.12.3 Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts * (n + 1) supply pin). This test
Unit
dBµV
Doc ID 16315 Rev 551/82
Electrical characteristicsSPC560D30x, SPC560D40x
conforms to the AEC-Q100-002/-003/-011 standard. For more details, refer to the
application note Electrostatic Discharge Sensitivity Measurement (AN1181).
Table 34.ESD absolute maximum ratings
(1) (2)
Symbol CRatingsConditionsClassMax value
V
ESD(HBM)
V
ESD(MM)
V
ESD(CDM)
1. All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2. A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification
requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at
room temperature followed by hot temperature, unless specified otherwise in the device specification.
CC T
CC T
CC T
Electrostatic discharge voltage
(Human Body Model)
Electrostatic discharge voltage
(Machine Model)
Electrostatic discharge voltage
(Charged Device Model)
T
= 25 °C
A
conforming to AEC-Q100-002
= 25 °C
T
A
conforming to AEC-Q100-003
= 25 °C
T
A
conforming to AEC-Q100-011
H1C2000
M2200
500
C3A
750 (corners)
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up
performance:
●A supply overvoltage is applied to each power supply pin.
●A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
Table 35.Latch-up results
Unit
V
SymbolCParameterConditionsClass
= 125 °C
T
LUCCT Static latch-up class
A
conforming to JESD 78
4.13 Fast external crystal oscillator (4 to 16 MHz) electrical
characteristics
The device provides an oscillator/resonator driver. Figure 9 describes a simple model of the
internal oscillator driver and provides an example of a connection for an oscillator or a
resonator.
Ta bl e 3 6 provides the parameter description of 4 MHz to 16 MHz crystals used for the
design simulations.
II level A
52/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xElectrical characteristics
Figure 9.Crystal oscillator and resonator connection scheme
EXTAL
C1
EXTAL
Crystal
XTAL
V
DD
I
R
DEVICE
C2
XTAL
EXTAL
DEVICE
Resonator
XTAL
DEVICE
Notes:
1. XTAL/EXTAL must not be directly used to drive external circuits
2. A series resistor may be required, according to crystal oscillator supplier recommendations.
Table 36.Crystal description
Nominal
frequency
(MHz)
NDK
crystal
reference
Crystal
equivalent
series
resistance
(ESR) Ω
Crystal
motional
capacitance
(C
) fF
m
Crystal
motional
inductance
(Lm) mH
Load on
xtalin/xtalout
C
1=C2
(pF)
(1)
4NX8045GB3002.68591.0212.93
8
3002.46160.7173.01
101502.9386.6152.91
Shunt
capacitance
between
xtalout and
xtalin
(2)
(pF)
C0
121203.1156.5152.93
NX5032GA
161203.9025.3103.00
1. The values specified for C1 and C2 are the same as used in simulations. It should be ensured that the testing includes all
the parasitics (from the board, probe, crystal, etc.) as the AC / transient behavior depends upon them.
2. The value of C0 specified here includes 2 pF additional capacitance for parasitics (to be seen with bond-pads, package,
etc.).
Doc ID 16315 Rev 553/82
Electrical characteristicsSPC560D30x, SPC560D40x
Figure 10. Fast external crystal oscillator (4 to 16 MHz) timing diagram
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. All values need to be confirmed during device validation.
3. This does not include consumption linked to clock tree toggling and peripherals consumption when RC oscillator is ON.
kHz
%
Doc ID 16315 Rev 557/82
Electrical characteristicsSPC560D30x, SPC560D40x
4.17 ADC electrical characteristics
4.17.1 Introduction
The device provides a 12-bit Successive Approximation Register (SAR) analog-to-digital
converter.
Figure 11. ADC characteristics and error definitions
code out
1023
1022
1021
1020
1019
1018
Offset Error (EO)
1 LSB ideal = V
(2)
7
(1)
6
5
(5)
4
3
2
(4)
(3)
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) Differential non-linearity error (DNL)
(4) Integral non-linearity error (INL)
(5) Center of a step of the actual transfer curve
Gain Error (E
/ 1024
DD_ADC
)
G
1
0
12345671017 1018 1019 1020 1021 1022 1023
Offset Error (E
O
)
1 LSB (ideal)
V
(LSB
in(A)
4.17.2 Input impedance and ADC accuracy
In the following analysis, the input circuit corresponding to the precise channels is
considered.
58/82Doc ID 16315 Rev 5
ideal
)
SPC560D30x, SPC560D40xElectrical characteristics
To preserve the accuracy of the A/D converter, it is necessary that analog input pins have
low AC impedance. Placing a capacitor with good high frequency characteristics at the input
pin of the device can be effective: the capacitor should be as large as possible, ideally
infinite. This capacitor contributes to attenuating the noise present on the input pin;
furthermore, it sources charge during the sampling phase, when the analog signal source is
a high-impedance source.
A real filter can typically be obtained by using a series resistance with a capacitor on the
input pin (simple RC filter). The RC filtering may be limited according to the value of source
impedance of the transducer or circuit supplying the analog signal to be measured. The filter
at the input pins must be designed taking into account the dynamic characteristics of the
input signal (bandwidth) and the equivalent input impedance of the ADC itself.
In fact a current sink contributor is represented by the charge sharing effects with the
sampling capacitance: C
being substantially a switched capacitance, with a frequency
S
equal to the conversion rate of the ADC, it can be seen as a resistive path to ground. For
instance, assuming a conversion rate of 1 MHz, with C
330 kΩ is obtained (R
= 1 / (fc*CS), where fc represents the conversion rate at the
EQ
equal to 3 pF, a resistance of
S
considered channel). To minimize the error induced by the voltage partitioning between this
resistance (sampled voltage on C
) and the sum of RS + RF + RL + RSW + RAD, the external
S
circuit must be designed to respect the Equation 4:
: Channel selection switch impedance (two contributions, R
SW1
R
: Sampling switch impedance
AD
C
: Pin capacitance (two contributions, CP1, CP2 and CP3)
P
C
: Sampling capacitance
S
SW1
and R
60/82Doc ID 16315 Rev 5
SW2
R
SW1
C
P3
R
SW2
C
P2
R
AD
C
S
)
SPC560D30x, SPC560D40xElectrical characteristics
A second aspect involving the capacitance network shall be considered. Assuming the three
capacitances C
, CP1 and C
F
are initially charged at the source voltage VA (refer to the
P2
equivalent circuit in Figure 13): A charge sharing phenomenon is installed when the
sampling phase is started (A/D switch close).
Figure 14. Transient behavior during sampling phase
V
CS
V
A
V
A2
V
A1
Voltage transient on C
1
2
S
t
s
ΔV < 0.5 LSB
τ1 < (RSW + RAD) CS << t
τ2 = RL (CS + CP1 + CP2)
t
s
In particular two different transient periods can be distinguished:
1.A first and quick charge transfer from the internal capacitance C
sampling capacitance C
occurs (CS is supposed initially completely discharged):
S
and CP2 to the
P1
considering a worst case (since the time constant in reality would be faster) in which
C
is reported in parallel to C
P2
C
are in series, and the time constant is
S
(call CP = CP1 + CP2), the two capacitances CP and
P1
Equation 5:
CPC
•
τ
R
1
+()=
SWRAD
--------------------- -
•
CPCS+
S
Equation 5 can again be simplified considering only CS as an additional worst
condition. In reality, the transient is faster, but the A/D converter circuitry has been
designed to be robust also in the very worst case: the sampling time t
is always much
s
longer than the internal time constant:
Equation 6:
The charge of C
voltage V
on the capacitance according to Equation 7:
A1
τ1R
and CP2 is redistributed also on CS, determining a new value of the
P1
+()<C
SWRAD
Equation 7:
V
A1CSCP1CP2
++()•V
2. A second charge transfer involves also C
capacitance) through the resistance R
and C
were in parallel to CP1 (since the time constant in reality would be faster), the
S
: again considering the worst case in which CP2
L
time constant is:
Doc ID 16315 Rev 561/82
t
«•
s
S
C
A
(that is typically bigger than the on-chip
F
+()•=
P1CP2
Electrical characteristicsSPC560D30x, SPC560D40x
Equation 8:
<C
τ2R
L
++()•
SCP1CP2
In this case, the time constant depends on the external circuit: in particular imposing
that the transient is completed well before the end of sampling time t
R
sizing is obtained:
L
, a constraints on
s
Equation 9:
10 τ
•10 R
Of course, R
combination with R
shall be sized also according to the current limitation constraints, in
L
(source impedance) and RF (filter resistance). Being CF
S
definitively bigger than C
2
, CP2 and CS, then the final voltage V
P1
LCSCP1CP2
charge transfer transient) will be much higher than V
(charge balance assuming now C
already charged at VA1):
S
++()••=t
<
. Equation 10 must be respected
A1
s
(at the end of the
A2
Equation 10:
V
A2CSCP1CP2CF
+++()•VAC
•V
+CP1CP2+C
F
A1
+()•=
S
The two transients above are not influenced by the voltage source that, due to the presence
of the R
C
with respect to the ideal source VA; the time constant RFCF of the filter is very high with
S
respect to the sampling time (t
filter, is not able to provide the extra charge to compensate the voltage drop on
FCF
). The filter is typically designed to act as anti-aliasing.
s
Figure 15. Spectral representation of input signal
Analog source bandwidth (V
f
0
Anti-aliasing filter (f
= RC filter pole)
F
Noise
)
A
f
tc< 2 RFCF (conversion rate vs. filter pole)
= f0 (anti-aliasing filtering condition)
f
F
2 f0< fC (Nyquist)
Sampled signal spectrum (f
= conversion rate)
C
f
F
Calling f
the bandwidth of the source signal (and as a consequence the cut-off frequency of
0
the anti-aliasing filter, f
least 2f
; it means that the constant time of the filter is greater than or at least equal to twice
0
the conversion period (t
f
), according to the Nyquist theorem the conversion rate fC must be at
F
). Again the conversion period tc is longer than the sampling time ts,
c
which is just a portion of it, even when fixed channel continuous conversion mode is
selected (fastest conversion rate at a specific channel): in conclusion it is evident that the
time constant of the filter R
62/82Doc ID 16315 Rev 5
is definitively much higher than the sampling time ts, so the
FCF
f
0
f
C
f
SPC560D30x, SPC560D40xElectrical characteristics
charge level on CS cannot be modified by the analog signal source during the time in which
the sampling switch is closed.
The considerations above lead to impose new constraints on the external circuit, to reduce
the accuracy error due to the voltage drop on C
above, it is simple to derive Equation 11 between the ideal and real sampled voltage on C
; from the two charge balance equations
S
S
Equation 11:
V
A2
----------- V
A
C
+C
P1CP2
------------------------------------------------------- -=
C
+CFC
P1CP2
+
F
++
S
:
From this formula, in the worst case (when V
assuming to accept a maximum error of half a count, a constraint is evident on C
1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2. Analog and digital V
3. V
4. Duty cycle is ensured by using system clock without prescaling. When ADCLKSEL = 0, the duty cycle is ensured by internal
5. During the sampling time the input capacitance C
6. This parameter does not include the sampling time t
7. Total Unadjusted Error: The maximum error that occurs without adjusting Offset and Gain errors. This error is a
may exceed V
AINx
will be clamped respectively to 0x000 or 0xFFF.
divider by 2.
resistance of the analog source must allow the capacitance to reach its final voltage level within tS. After the end of the
sampling time tS, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock
t
depend on programming.
S
the result’s register with the conversion result.
combination of Offset, Gain and Integral Linearity errors.
P Total unadjusted error
CC
CC
for precise channels,
TWith current injection–88
input only pins
T
Total unadjusted error
for extended channel
TWith current injection–1212
must be common (to be tied together externally).
SS
and V
SS_ADC
DD_ADC
Without current injection–66
Without current injection–1010
limits, remaining on absolute maximum ratings, but the results of the conversion
can be charged/discharged by the external source. The internal
S
, but only the time for determining the digital result and the time to load
S
Unit
LSB
LSB
4.18 On-chip peripherals
4.18.1 Current consumption
Table 43.On-chip peripherals current consumption
SymbolCParameterConditionsTypical value
500 Kbyte/s Total (static + dynamic)
I
DD_BV(CAN)
CAN (FlexCAN) supply
CC T
current on V
DD_BV
125 Kbyte/s8 * f
Doc ID 16315 Rev 565/82
(1)
8 * f
consumption:
– FlexCAN in loop-back
mode
– XTAL at 8 MHz used as
CAN engine clock source
– Message sending period
is 580 µs
periph
periph
(2)
Unit
+ 85µA
+ 27µA
Electrical characteristicsSPC560D30x, SPC560D40x
Table 43.On-chip peripherals current consumption
(1)
(continued)
SymbolCParameterConditionsTypical value
Static consumption:
I
DD_BV(eMIOS)
eMIOS supply current
CC T
on V
DD_BV
– eMIOS channel OFF
– Global prescaler enabled
Dynamic consumption:
– It does not change varying the
29 * f
periph
3µA
frequency (0.003 mA)
Total (static + dynamic) consumption:
– LIN mode
– Baudrate: 20 Kbyte/s
Figure 20. DSPI modified transfer format timing – master, CPHA = 0
3
PCSx
SCK Output
(CPOL = 0)
SCK Output
(CPOL = 1)
SIN
SOUT
2
9
First Data
12
First Data
4
Data
11
Data
Note: Numbers shown reference Tab le 4 4.
1
4
10
Last Data
Last Data
Figure 21. DSPI modified transfer format timing – master, CPHA = 1
PCSx
SCK Output
(CPOL = 0)
SCK Output
(CPOL = 1)
9
SIN
SOUT
70/82Doc ID 16315 Rev 5
First Data
First Data
Note: Numbers shown reference Ta bl e 4 4 .
12
Data
Data
10
Last Data
11
Last Data
SPC560D30x, SPC560D40xElectrical characteristics
Figure 22. DSPI modified transfer format timing – slave, CPHA = 0
3
1
4
12
SS
SCK Input
(CPOL = 0)
SCK Input
(CPOL = 1)
SOUT
SIN
5
2
First Data
9
First Data
4
11
Data
Data
Note: Numbers shown reference Ta bl e 4 4 .
Last Data
10
Last Data
Figure 23. DSPI modified transfer format timing – slave, CPHA = 1
6
SS
SCK Input
(CPOL = 0)
SCK Input
(CPOL = 1)
SOUT
SIN
11
5
First Data
9
First Data
10
Data
Data
Note: Numbers shown reference Tab l e 4 4 .
12
Last Data
Last Data
6
Doc ID 16315 Rev 571/82
Electrical characteristicsSPC560D30x, SPC560D40x
4.18.3 JTAG characteristics
Table 45.JTAG characteristics
No.SymbolCParameter
1t
JCYC
2t
3t
4t
5t
6t
7t
TDIS
TDIH
TMSS
TMSH
TDOV
TDOI
CCD TCK cycle time83.33——ns
CCD TDI setup time15——ns
CCD TDI hold time5——ns
CCD TMS setup time15——ns
CCD TMS hold time5——ns
CCD TCK low to TDO valid——49ns
CCD TCK low to TDO invalid6——ns
Figure 24. Timing diagram – JTAG boundary scan
TCK
Value
MinTypMax
2/4
3/5
Unit
DATA IN PUTS
DATA OUTPUTS
DATA OUTPUTS
INPUT DATA VALID
6
OUTPUT DATA VALID
7
Note: Numbers shown reference Tab l e 4 5 .
72/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage characteristics
5 Package characteristics
5.1 ECOPACK
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 Package mechanical data
5.2.1 LQFP100
Figure 25. LQFP100 mechanical drawing
Doc ID 16315 Rev 573/82
Package characteristicsSPC560D30x, SPC560D40x
Table 46.LQFP100 mechanical data
mminches
Symbol
MinTypMaxMinTypMax
A——1.600——0.0630
A10.050—0.1500.0020—0.0059
A21.3501.4001.4500.05310.05510.0571
b0.1700.2200.2700.00670.00870.0106
c0.090—0.2000.0035—0.0079
D15.80016.00016.2000.62200.62990.6378
D113.80014.00014.2000.54330.55120.5591
D3—12.000——0.4724—
E15.80016.00016.2000.62200.62990.6378
E113.80014.00014.2000.54330.55120.5591
E3—12.000——0.4724—
e—0.500——0.0197—
L0.4500.6000.7500.01770.02360.0295
L1—1.000——0.0394—
(1)
k0.0 °3.5 °7.0 °0.0 °3.5 °7.0 °
Tolerancemminches
ccc0.0800.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
74/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xPackage characteristics
5.2.2 LQFP64
Figure 26. LQFP64 mechanical drawing
D
C
ccc
A2
A
48
D1
D3
33
49
b
64
Pin 1
identification
32
E3
E1 E
A1K
17
1
Table 47.LQFP64 mechanical data
16
c
5W_ME
mminches
(1)
Symbol
MinTypMaxMinTypMax
A——1.6——0.0630
A10.05—0.150.0020—0.0059
A21.351.41.450.05310.05510.0571
L1
L
b0.170.220.270.00670.00870.0106
c0.09—0.20.0035—0.0079
D11.81212.20.46460.47240.4803
D19.81010.20.38580.39370.4016
D3—7.5——0.2953—
E11.81212.20.46460.47240.4803
E19.81010.20.38580.39370.4016
E3—7.5——0.2953—
e—0.5——0.0197—
L0.450.60.750.01770.02360.0295
L1—1——0.0394—
k0.0°3.5°7.0°0.0°3.5°7.0°
ccc——0.08——0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Ta bl e 4 8 lists abbreviations used in this document.
Table 48.Abbreviations
AbbreviationMeaning
APUAuxilliary processing unit
CMOSComplementary metal–oxide–semiconductor
CPHAClock phase
CPOLClock polarity
CSPeripheral chip select
DAOCDouble action output compare
ECCError code correction
EVTOEvent out
GPIOGeneral purpose input/output
IPMInput period measurement
IPWMInput pulse width measurement
MBMessage buffer
MCModulus counter
MCBModulus counter buffered (up / down)
MCKOMessage clock out
MDOMessage data out
MSEOMessage start/end out
MTFEModified timing format enable
NVUSRONon-volatile user options register
OPWFMBOutput pulse width and frequency modulation buffered
OPWMBOutput pulse width modulation buffered
OPWMCBCenter aligned output pulse width modulation buffered with dead time
OPWMTOutput pulse width modulation trigger
PWMPulse width modulation
SAICSingle action input capture
SAOCSingle action output compare
SCKSerial communications clock
SOUTSerial data out
TBDTo be defined
TCKTest clock input
TDITest data input
Doc ID 16315 Rev 577/82
AbbreviationsSPC560D30x, SPC560D40x
Table 48.Abbreviations (continued)
AbbreviationMeaning
TDOTest data output
TMSTest mode select
78/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xRevision history
Revision history
Ta bl e 4 9 summarizes revisions to this document.
Table 49.Document revision history
DateRevisionChanges
09-Jul-20091Initial release.
Updated the following tables:
- Absolute maximum ratings
- Low voltage power domain electrical characteristics;
18-Feb-20102
10-Aug-20103
- On-chip peripherals current consumption
- DSPI characteristics;
- JTAG characteristics;
- ADC conversion characteristics;
Inserted a note on “Flash power supply DC characteristics” section.
“Features” section: Updated information concerning eMIOS, ADC,
LINFlex, Nexus and low power capabilities
“SPC560D30, SPC560D40 device comparison” table: updated the
“Execution speed” row
“SPC560D30, SPC560D40 series block diagram” figure:
– updated max number of Crossbar Switches
– updated Legend
“SPC560D30, SPC560D40 series block summary” table: added
need to be confirmed during device validation”; updated I
LKG
characteristics
80/82Doc ID 16315 Rev 5
SPC560D30x, SPC560D40xRevision history
Table 49.Document revision history (continued)
DateRevisionChanges
MEDIUM configuration output buffer electrical characteristics:
= 100 µA” to “IOL= 100 µA” in VOL conditions
OH
values
esus
EMI
values
16-Sep-2011
4
(cont.)
changed “I
I/O consumption: replaced instances of “Root medium square” with
“Root mean square”
Updated section “Voltage regulator electrical characteristics”
Section “Low voltage detector electrical characteristics”: changed
title (was “Voltage monitor electrical characteristics”); added a fifth
LVD (LVDHV3B); added event status flag names found in RGM
chapter of device reference manual to POR module and LVD
descriptions; replaced instances of “Low voltage monitor” with “Low
voltage detector”; deleted note referencing power domain No. 2 (this
domain is not present on the device); updated electrical
characteristics table
Updated and renamed section “Power consumption” (was previously
section “Low voltage domain power consumption”)
Program and erase specifications (code flash): updated symbols;
updated t
Crystal oscillator and resonator connection scheme: inserted
footnote about possibly requiring a series resistor
Fast internal RC oscillator (16 MHz) electrical characteristics:
updated t
Section “Input impedance and ADC accuracy”: changed “V
FIRCSU
values
A/VA2
“VA2/VA” in Equation 13
ADC conversion characteristics:
– updated conditions for sampling time V
= 5.0 V
DD
– updated conditions for conversion time VDD =5.0 V
Updated Abbreviations
Removed Order codes tables.
Replaced “TBD” with “8.21 mA” in I
DD_HV(FLASH)
cell of On-chip
peripherals current consumption table
” to
Doc ID 16315 Rev 581/82
SPC560D30x, SPC560D40x
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