ST SMP100MC User Manual

查询SMP100MC供应商
®
TRISIL™ FOR TELECOM EQUIPMENT PROTECTION
Bidirectional crowbar protection
Voltage: range from 120V to 270V
Low V
Micro capacitance from 20pF to 30pF @ 50V
Low leakage current : I
Holding current: I
Repetitive peak pulse current :
IPP = 100 A (10/1000µs)
MAIN APPLICATIONS
Any sensitive equipment requiring protection against lightning strikes and power crossing. These devices are dedicated to central office pro­tection as they comply with the most stressfull standards. Their Micro Capacitance make them suitable for ADSL2+ and low end VDSL.
DESCRIPTION
The SMP100MC is a series of micro capacitance transient surge arrestors designed for the protec­tion of high debit rate communication equipment. Its micro capacitance avoids any distortion of the signal and is compatible with digital transmission line cards (ADSL, VDSL, ISDN...). Compatible with Cooper Bussmann fuse: TCP 1.25A.
/ VR ratio
BO
= 2µA max
R
= 150 mA min
H
SMP100MC
SMB
(JEDEC DO-214AA)
Table 1: Order Codes
Part Number Marking
SMP100MC-120 ML12 SMP100MC-140 ML14 SMP100MC-160 ML16 SMP100MC-200 ML20 SMP100MC-230 ML23 SMP100MC-270 ML27
Figure 1: Schematic Diagram
BENEFITS
Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL60950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils comply with the following standards GR­1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-5 and FCC part 68.
December 2004
REV. 1
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SMP100MC
Table 2: In compliance with the following standards
STANDARD
GR-1089 Core
First level
GR-1089 Core
Second level
GR-1089 Core
Intra-building
ITU-T-K20/K21
ITU-T-K20
(IEC61000-4-2)
VDE0433
VDE0878
IEC61000-4-5
FCC Part 68, lightning
surge type A
FCC Part 68, lightning
surge type B
Peak Surge
Voltag e
(V)
2500 1000
5000 2/10 µs 500 2/10 µs 0
1500 2/10 µs 100 2/10 µs 0
6000 1500
8000
15000
4000 2000
4000 2000
4000 4000
1500
800
1000 9/720 µs 25 5/320 µs 0
Waveform
Voltag e
2/10 µs
10/1000 µs
10/700 µs
1/60 ns
10/700 µs
1.2/50 µs
10/700 µs
1.2/50 µs
10/160 µs 10/560 µs
Required
peak current
(A)
500 100
150
37.5
Current
waveform
2/10 µs
10/1000 µs
5/310 µs
ESD contact discharge
ESD air discharge
100
50
100
50
100 100
200 100
5/310 µs
1/20 µs
5/310 µs
8/20 µs
10/160 µs 10/560 µs
Minimum serial
resistor to meet
standard (Ω)
0 0
0 0
0 0
0 0
0 0
0 0
0 0
Table 3: Absolute Ratings (T
amb
= 25°C)
Symbol Parameter Value Unit
100 400 140 150 200 400 500
18
9 7 4
20 21
-55 to 150 150
I
PP
I
FS
I
TSM
I
T
T
T
Note 1: in fail safe mode, the device acts as a short circuit
Repetitive peak pulse current
Fail-safe mode : maximum current (note 1) 8/20 µs 5 kA
Non repetitive surge peak on-state current (sinusoidal)
2
tI2t value for fusing
Storage temperature range
stg
Maximum junction temperature
j
Maximum lead temperature for soldering during 10 s. 260 °C
L
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs 2/10 µs
t = 0.2 s
t = 1 s t = 2 s
t = 15 mn
t = 16.6 ms
t = 20 ms
A
A
A2s
°C
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SMP100MC
Table 4: Thermal Resistances
Symbol Parameter Value Unit
R
R
th(j-a)
th(j-l)
Junction to ambient (with recommended footprint) 100 °C/W Junction to leads 20 °C/W
Table 5: Electrical Characteristics (T
amb
= 25°C)
Symbol Parameter
V
V
V
I
I
I
Stand-off voltage
RM
Breakdown voltage
BR
Breakover voltage
BO
Leakage current
RM
Peak pulse current
PP
Breakover current
BO
I
Holding current
H
V
Continuous reverse voltage
R
I
Leakage current at V
R
R
C Capacitance
Types
I
RM
@ V
RM
IR @ V
R
Dynamic
V
BO
max. max. max. max. max. min. typ. typ.
V
BO
Static
@ I
BO
I
H
CC
note1 note 2 note 3 note 4 note 5 note 6
µAVµAV V VmAmApFpF
SMP100MC-120*
108
120 155 150
30 60
SMP100MC-140* 126 140 180 175 30 60
SMP100MC-160 144 160 205 200 25 50 SMP100MC-200 180 200 255 250 20 45
2
5
800 150
SMP100MC-230 207 230 295 285 20 40 SMP100MC-270 243 270 345 335 20 40
Note 1: IR measured at VR guarantee VBR min VR Note 2: see functional test circuit 1
Note 3: see test circuit 2 Note 4: see functional holding current test circuit 3 Note 5: V
Note 6: V
= 50V bias, V
R
= 2V bias, V
R
RMS
=1V, F=1MHz
RMS
=1V, F=1MHz
* in development
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SMP100MC
Figure 2: Pulse waveform Figure 3: Non repetitive surge peak on-state
current versus overload duration
I (A)
TSM
70
60
50
40
30
20
10
0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t(s)
F=50Hz
Tj initial = 25°C
100
50
0
%I
PP
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
t
r
t
p
t
Figure 4: On-state voltage versus on-state current (typical values)
I (A)
T
100
Tj=25°C
V (V)
T
10
012345678
Figure 6: Relative variation of breakover voltage versus junction temperature
V [Tj] / V [Tj=25°C]
BO BO
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Tj(°C)
Figure 5: Relative variation of holding current versus junction temperature
I [Tj] / I [Tj=25°C]
HH
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Tj(°C)
Figure 7: Relative variation of leakage current versus junction temperature (typical values)
I [Tj] / I [Tj=25°C]
RR
1.E+03
1.E+02
1.E+01
1.E+00
V =243V
R
Tj(°C)
25 50 75 100 125
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SMP100MC
Figure 8: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35µm,
Figure 9: Relative variation of junction capacitance versus reverse voltage applied (typical values)
recommended pad layout)
Z/R
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tp(s)
C [V ] / C [V =2V]
RR
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1 10 100 1000
V (V)
R
F =1MHz
V= 1V
OSC RMS
Tj = 25°C
APPLICATION NOTE
In wireline applications, analog or digital, both central office and subscriber sides have to be protected. This function is assumed by a combined series / parallel protection stage.
Ring relay
Line
Protection stage
Ex. Analog line card Ex. ADSL line card or terminal
Line
Protection stage
In such a stage, parallel function is assumed by one or several Trisil, and is used to protect against short duration surge (lightning). During this kind of surges the Trisil limits the voltage across the device to be protected at its break over value and then fires. The fuse assumes the series function, and is used to pro­tect the module against long duration or very high current mains disturbances (50/60Hz). It acts by safe circuits opening. Lightning surge and mains disturbance surges are defined by standards like GR1089, FCC part 68, ITU-T K20.
Fuse TCP 1.25A
Tip S
SMP100MC-xxx
Gnd
SMP100MC-xxx
Ring S
Fuse TCP 1.25A
T1
SMP100MC-xxx
T2
Tip L
Gnd
Fuse TCP 1.25A
Ring L
Typical circuit for subscriber side Typical circuit for central office side
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SMP100MC
Following figure shows the test method of the board having Fuse and Trisil.
Surge
Generator
Current probe
I surge
Line side
Test board
Oscilloscope
Device to be protected
V
Voltage probe
These topologies, using SMP100MC from ST and TCP1.25A from Cooper Bussmann, have been functionally validated with a Trisil glued on the PCB. Following example was performed with SMP100MC-270 Trisil. For more information, see Application Note AN2064.
Following curve shows the turn on of the Trisil during lightning surge.
Test conditions:
2/10µs + and -2.5 and 5kV 500A (10 pulses of each polarity), T
amb
= 25°C
Test result:
Fuse and Trisil OK after test in accordance with GR1089 requirements
Following curve shows Trisil action while the fuse remains operational.
Test conditions:
600V 3A 1.1s (first level), T
amb
= 25°C
Test result:
Fuse and Trisil OK after test in accordance with GR1089 requirements
In case of high current power cross test, the fuse acts like a switch by opening the circuit.
Test conditions:
277V 25A (second level), T
amb
= 25°C
Test result:
Fuse safety opened and Trisil OK after test in accordance with GR1089 requirements
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Figure 10: Test circuit 1 for Dynamic IBO and VBO parameters
100 V / µs, di /dt < 10 A / µs, Ip p = 100 A
SMP100MC
U
KeyTek 'System 2' generator with PN246I module
10 µF
1 kV / µs, di/dt < 10 A / µs, Ip p = 10 A
26 µH
U
KeyTek 'System 2' generator with PN246I module
60 µF
Figure 11: Test circuit 2 for I
2
12
and VBO parameters
BO
45
250
ton = 20ms
83
66
470
47
K
46 µH
R1 = 140
0.36 nF
46 µH
220V 50Hz
Vout
1/4
TEST PROCEDURE
Pulse test duration (tp = 20ms):
for Bidirectional devices = Switch K is closed
for Unidirectional devices = Switch K is open
V selection:
OUT
Device with V < 200V V = 250 V , R1 = 140
Device with V 200V V = 480 V , R2 = 240
BO OUT RMS
≤Ω
BO OUT RMS
R2 = 240
IBO
measurement
DUT
VBO
measurement
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SMP100MC
Figure 12: Test circuit 3 for dynamic I
R
V
=-48V
BAT
This is a GO-NOGO test which allows to confirm the holding current (I ) level in a functional test circuit.
TEST PROCEDURE
1/ Adjust the current level at the I value by short circuiting the AK of the D.U.T.
2/ Fire the D.U.T. with a surge currentH➔
3/ The D.U.T. will come back off-state within 50ms maximum.
Figure 13: Order Code
parameter
H
I=
PP
10A, 10/1000µs.
Surge generator
D.U.T
H
Trisil Surface Mount
Repetitive Peak Pulse Current
100 = 100A
Capacitance
MC = Micro Capacitance
Voltage
270 = 270V
SMP 100 MC - xxx
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Figure 14: SMB Package Mechanical data
SMP100MC
E1
D
E
A1
C
L
A2
b
Figure 15: Foot Print Dimensions (in millimeters)
2.3
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
1.52 2.75
1.52
Table 5: Ordering Information
Part Number Marking Package Weight Base qty Delivery mode
SMP100MC-120 ML12
SMP100MC-140 ML14
SMP100MC-160 ML16
SMP100MC-200 ML20
SMB 0.11 g 2500 Tape & reel
SMP100MC-230 ML23
SMP100MC-270 ML27
Table 6: Revision History
Date Revision Description of Changes
September-2003 0B First issue.
14-Dec-2004 1 Absolute ratings values, table 3 on page 2, updated.
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SMP100MC
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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