ST SMP100MC User Manual
查询SMP100MC供应商
®
TRISIL™ FOR TELECOM EQUIPMENT PROTECTION
FEATURES
■ Bidirectional crowbar protection
■ Voltage: range from 120V to 270V
■ Low V
■ Micro capacitance from 20pF to 30pF @ 50V
■ Low leakage current : I
■ Holding current: I
■ Repetitive peak pulse current :
IPP = 100 A (10/1000µs)
MAIN APPLICATIONS
Any sensitive equipment requiring protection
against lightning strikes and power crossing.
These devices are dedicated to central office protection as they comply with the most stressfull
standards.
Their Micro Capacitance make them suitable for
ADSL2+ and low end VDSL.
DESCRIPTION
The SMP100MC is a series of micro capacitance
transient surge arrestors designed for the protection of high debit rate communication equipment.
Its micro capacitance avoids any distortion of the
signal and is compatible with digital transmission
line cards (ADSL, VDSL, ISDN...).
Compatible with Cooper Bussmann fuse:
TCP 1.25A.
/ VR ratio
BO
= 2µA max
R
= 150 mA min
H
SMP100MC
SMB
(JEDEC DO-214AA)
Table 1: Order Codes
Part Number Marking
SMP100MC-120 ML12
SMP100MC-140 ML14
SMP100MC-160 ML16
SMP100MC-200 ML20
SMP100MC-230 ML23
SMP100MC-270 ML27
Figure 1: Schematic Diagram
BENEFITS
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet main
standards such as UL60950, IEC950 / CSA C22.2
and UL1459. They have UL94 V0 approved resin.
SMB package is JEDEC registered (DO-214AA).
Trisils comply with the following standards GR1089 Core, ITU-T-K20/K21, VDE0433, VDE0878,
IEC61000-4-5 and FCC part 68.
December 2004
REV. 1
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SMP100MC
Table 2: In compliance with the following standards
STANDARD
GR-1089 Core
First level
GR-1089 Core
Second level
GR-1089 Core
Intra-building
ITU-T-K20/K21
ITU-T-K20
(IEC61000-4-2)
VDE0433
VDE0878
IEC61000-4-5
FCC Part 68, lightning
surge type A
FCC Part 68, lightning
surge type B
Peak Surge
Voltag e
(V)
2500
1000
5000 2/10 µs 500 2/10 µs 0
1500 2/10 µs 100 2/10 µs 0
6000
1500
8000
15000
4000
2000
4000
2000
4000
4000
1500
800
1000 9/720 µs 25 5/320 µs 0
Waveform
Voltag e
2/10 µs
10/1000 µs
10/700 µs
1/60 ns
10/700 µs
1.2/50 µs
10/700 µs
1.2/50 µs
10/160 µs
10/560 µs
Required
peak current
(A)
500
100
150
37.5
Current
waveform
2/10 µs
10/1000 µs
5/310 µs
ESD contact discharge
ESD air discharge
100
50
100
50
100
100
200
100
5/310 µs
1/20 µs
5/310 µs
8/20 µs
10/160 µs
10/560 µs
Minimum serial
resistor to meet
standard (Ω)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Table 3: Absolute Ratings (T
amb
= 25°C)
Symbol Parameter Value Unit
100
400
140
150
200
400
500
18
9
7
4
20
21
-55 to 150
150
I
PP
I
FS
I
TSM
I
T
T
T
Note 1: in fail safe mode, the device acts as a short circuit
Repetitive peak pulse current
Fail-safe mode : maximum current (note 1) 8/20 µs 5 kA
Non repetitive surge peak on-state current (sinusoidal)
2
tI2t value for fusing
Storage temperature range
stg
Maximum junction temperature
j
Maximum lead temperature for soldering during 10 s. 260 °C
L
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
t = 0.2 s
t = 1 s
t = 2 s
t = 15 mn
t = 16.6 ms
t = 20 ms
A
A
A2s
°C
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SMP100MC
Table 4: Thermal Resistances
Symbol Parameter Value Unit
R
R
th(j-a)
th(j-l)
Junction to ambient (with recommended footprint) 100 °C/W
Junction to leads 20 °C/W
Table 5: Electrical Characteristics (T
amb
= 25°C)
Symbol Parameter
V
V
V
I
I
I
Stand-off voltage
RM
Breakdown voltage
BR
Breakover voltage
BO
Leakage current
RM
Peak pulse current
PP
Breakover current
BO
I
Holding current
H
V
Continuous reverse voltage
R
I
Leakage current at V
R
R
C Capacitance
Types
I
RM
@ V
RM
IR @ V
R
Dynamic
V
BO
max. max. max. max. max. min. typ. typ.
V
BO
Static
@ I
BO
I
H
CC
note1 note 2 note 3 note 4 note 5 note 6
µAVµAV V VmAmApFpF
SMP100MC-120*
108
120 155 150
30 60
SMP100MC-140* 126 140 180 175 30 60
SMP100MC-160 144 160 205 200 25 50
SMP100MC-200 180 200 255 250 20 45
2
5
800 150
SMP100MC-230 207 230 295 285 20 40
SMP100MC-270 243 270 345 335 20 40
Note 1: IR measured at VR guarantee VBR min ≥ VR
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Note 4: see functional holding current test circuit 3
Note 5: V
Note 6: V
= 50V bias, V
R
= 2V bias, V
R
RMS
=1V, F=1MHz
RMS
=1V, F=1MHz
* in development
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