TTL LO GIC SIGNAL TO COMMUNICATE
WITH±5V ANALOG SIGNAL
■ LOW "ON" RESISTANCE:
70ΩTYP. (V
50ΩTYP. (V
■ WIDE ANALOG INPUT VOLTAGE RANGE:
CC-VEE
CC-VEE
±6V
■ FAST SWITCHING:
t
= 13ns (TYP.) at TA=25°C
pd
■ LOW CROSSTALK BETWEEN SWITCHES
■ HIGHON/OFF OUTPUTVOLTAGERATIO
■ WIDE OPERATING SUPPLYVOLTAGE
RANGE (V
■ LOW SINE WAVE DISTORTION:
0.02%atV
■ COMPATIBLE WITH TTL OUTPUTS:
=2V(MIN.)VIL= 0.8V (MAX.)
V
IH
■ PIN AND FUNCTION COMPATIBLE WITH
CC-VEE
CC-VEE
74 SERIES 4051
DESCRIPTION
The M74HCT4051 is a single eight-channel
analogMULTIPLEXER/DEMULTIPLEXER
fabricated with silicon gate C
and it is pin to pin compatible with t he equivalent
metal gate C MOS4000B series.
It c onta ins 8 bidirectional and digitally controlled
analog switches.
PIN CONNE CTION AND IEC LOGIC SYMBOLS
=4.5V)
=9V)
) = 2 V TO 12V
=9V
2
MOS technology
M74HCT4051
SINGLE 8-CHANNEL
TSSOPDIPSOP
ORDER CODES
PACKAGETUBET & R
DIP
SOP
TSSOP
A built-in level shifting is included to allow an input
rangeupto±6V (peak) for an analog signal with
digital control signal of 0 to 6V.
V
EE
signals. It has an inhibit (INH) input terminal to
disable all the switches when high, com pat ibl e
with TTL out put level. For operation as a digital
multiplexer/demultiplexer, VEE is connected to
GND. A, B and C control inputs select one c hannel
out of eight channels; they are compatible with
TTL output level.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HCT4051B1R
M74HCT4051M1R M74HCT4051RM13TR
M74HCT4051TTR
supply pin is provided for analog input
1/14March 2003
M74HCT4051
CONTROL INPUT EQUIVALENT CIRCUIT
I/O EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
3COM
OUT/IN
6INHINHIBIT Input
7V
11, 10, 9A, B, CSelect Inputs
13, 14, 15,
12, 1,5,2,4
8GNDGround (0V)
16V
EE
0 to 7Independent Input/Out-
CC
Common Output/Input
Negative Supply Voltage
puts
Positive Supply Voltage
TRUTH TABLE
INPUT STATE
INHCBA
LLLL0
LLLH1
LLHL2
LLHH3
LHLL4
LHLH5
LHHL6
LHHH7
HXXXNONE
ON CHANNEL
FUNCTIONAL DIAGRAM
2/14
M74HCT4051
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
CC -VEE
V
V
I
CK
I
IOK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mWat65
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
CC-VEE
V
V
T
t
r,tf
Supply Voltage
CC
Supply Voltage
Control Input Voltage-0.5 to VCC+ 0.5
I
Switch I/O VoltageVEE-0.5 to VCC+0.5
I/O
Control Input Diode Current
I/O Diode Current
Switch Through Current
T
DC VCCor Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°Cfrom65°Cto85°C
Supply Voltage
CC
Supply Voltage
EE
Supply Voltage
Input Voltage0 to V
I
I/O VoltageVEEto V
I/O
Operating Temperature
op
Input Rise and Fall TimeVCC= 4.5 to 5.5V
-0.5 to +7V
-0.5 to +13V
± 20mA
± 20mA
± 25mA
± 50mA
500(*)mW
-65 to +150°C
300°C
4.5 to 5.5V
-6 to 0V
2to12V
CC
CC
-55 to 125°C
0 to 500ns
V
V
V
V
3/14
M74HCT4051
DC SPECIFICATIONS
Test ConditionValue
SymbolParameter
V
V
R
∆R
High Level Input
IHC
Voltage
Low Level Input
ILC
Voltage
ON Resistance4.5 GND VI=V
ON
Difference of ON
ON
Resistance
between switches
I
Input/Output
OFF
Leakage Current
(SWITCH OFF)
Switch Input
I
IZ
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
I
Input L eakage
I
Current
I
Quiescent Supply
CC
Current
∆I
Additional
CC
Quiescent Supply
Current per input
pin
V
(V)
CC
V
(V)
EE
= 25°C
T
A
-40 to 85°C
Min. Typ. Max. Min. Max. Min. Max.
-55 to
125°C
4.5
to
2.02.02.0V
5.5
4.5
to
0.80.80.8V
5.5
or V
IHC
V
4.5-4.555120150180
4.5 G ND V
4.5-4.550100125150
4.5 G ND V
4.5-4.55121518
I/O=VCC
I
I/O
I=VIHC
V
I/O=VCC
I
I/O
I=VIHC
V
I/O=VCC
I
I/O
≤ 2mA
≤ 2mA
≤ 2mA
to V
or V
or V
or V
or V
ILC
EE
ILC
EE
ILC
EE
5.5 G ND VOS=VCCor GND
V
= GND or V
5.5-6.0
5.5 G ND V
5.5-6.0
IS
VI=V
ILC
OS=VCC
V
I=VIHC
or V
or GND
or V
CC
IHC
ILC
85180225270
70150190230
10303545
±
0.06
± 0.6± 1.0
± 0.1± 1± 1
±
0.06
± 0.6± 1.0
± 0.1± 1± 1
5.5 G NDVI=VCCor GND± 0.1± 0.1± 1
5.5 G ND
5.5-6.0880160
4.5
to
GND
V
I=VCC
V
other inp ut at V
5.5
I=VCC
or GND
or GND
- 2.1V
CC
100360450490µA
44080
Unit
Ω
Ω
µA
µA
µA
µA
4/14
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, Input tr=tf=6ns)
Test ConditionValue
M74HCT4051
SymbolParameter
Φ
Phase Difference
I/O
Between Input and
Output
PZL
PZH
PLZ
PHZ
Output Enable
Time
Output Disable
Time
t
t
t
t
= 25°C
T
V
V
CC
EE
(V)
(V)
4.5 GND
= 50pF
C
4.5-4.5481012
L
4.5 GNDRL=1KΩ
C
4.5-4.511344351
= 50pF
L
4.5 GNDRL=1KΩ
C
4.5-4.519313947
= 50pF
L
A
Min. Typ. Max. Min. Max. Min. Max.
5121518
13455668
25384858
-40 to 85°C
-55 to
125°C
Unit
ns
ns
ns
CAPACITANCE CHARACTERISTICS
Test ConditionValue
SymbolParameter
V
(V)
CC
V
(V)
EE
T
A
-40 to 85°C
= 25°C
Min. Typ. Max. Min. Max. Min. Max.
Input Capacitance5.05101010pF
C
IN
C
C
C
C
Common Terminal
I/O
Capacitance
Switch Terminal
I/O
Capacitance
Feed Through
IOS
Capacitance
Power Dissipation
PD
Capacitance
5.0-5.011202020pF
5.0-5.07151515pF
5.0-5.00.75222pF
5.0 GND67pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
-55 to
125°C
Unit
5/14
M74HCT4051
ANALOG S WITCH CHARACTERISTICS (GND = 0V;TA=25°C)
SymbolParameterTest ConditionValue Unit
V
V
CC
(V)
V
(V)
EE
(V
IN
p-p
)
Typ.
Sine Wave
Distortion
Sine Wave
Distortion
f
MAX
Frequency
Response
(Switch ON) (*)
MAX
Frequency
Response
f
(Switch ON) (**)
Feed through
Attenuation
(Switch OFF)
Crosstalk (Control
Input to Signal
Output)
Crosstalk
(between any two
switches)
(*) Input COMMON Terminal, and measured at SWITCH Terminal
(**) Input SWITCH Terminal, and measured at common Terminal
NOTE: These characteristics are determined by the design of the device.
2.25 -2.254
4.5-4.580.020
2.25 -2.254
4.5-4.580.06
f
2.25 -2.25Adjust f
Increase f
IN
R
=50Ω,CL=10pF,fIN= 1KHz sine wave
L
2.25 -2.25Adjust fINvoltage to obtain 0 dBm at VOS.
Increase f
6.0-6.0
IN
R
=50Ω,CL=10pF,fIN= 1KHz sine wave
L
2.25 -2.25V
4.5-4.5-50
= 600Ω,CL=50pF,fIN= 1MHz sine wave
R
L
4.50Adjust R
R
4.5-4.5140
=600Ω,CL=50pF,fIN= 1MHz square wave between
L
2.25 -2.25Adjust V
R
4.5-4.5-50
= 600Ω,CL=50pF,fIN= 1MHz sine wave
L
= 1 KHz RL=10KΩ,CL=50pF
f
IN
=10KHzRL=10KΩ,CL=50pF
IN
voltage to obtain 0 dBm at VOS.
IN
Frequency until dB meter reads -3dB
Frequency until dB meter reads -3dB
is centered at (VCC-VEE)/2
IN
Adjust input for 0 dBm
at set up so that IS=0A.
L
Vcc and GND tr=tf= 6 ns
to obtain 0dBm at input
IN
0.025
0.12
120
95
-50
60
-50
%
%
MHz4.5-4.5190
MHz4.5-4.5150
dB
mV
dB
6/14
M74HCT4051
SWITCHING CARACTERISTICS TEST CIRCUIT
CROSSTALK (control to output)
BANDWIDTH AND FEEDTHROUGH ATTENUATIONCROSSTALK BETWEEN ANY TWO SWITCHES
Information furnished is believed to be accurate and reliable . However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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