ST SM74HCT4051 User Manual

ANALOG MULTIPLEXER/DEMULTIPLEXER
LOW POWER DISSIPATION:
I
=4µA(MAX.)atTA=25°C
CC
LOGIC LEVEL TRANSLATION TO ENABLE
LOW "ON" RESISTANCE:
70TYP. (V 50TYP. (V
WIDE ANALOG INPUT VOLTAGE RANGE:
CC-VEE CC-VEE
±6V
FAST SWITCHING:
t
= 13ns (TYP.) at TA=25°C
pd
LOW CROSSTALK BETWEEN SWITCHES
HIGHON/OFF OUTPUTVOLTAGERATIO
WIDE OPERATING SUPPLYVOLTAGE
RANGE (V
LOW SINE WAVE DISTORTION:
0.02%atV
COMPATIBLE WITH TTL OUTPUTS:
=2V(MIN.)VIL= 0.8V (MAX.)
V
IH
PIN AND FUNCTION COMPATIBLE WITH
CC-VEE
CC-VEE
74 SERIES 4051
DESCRIPTION
The M74HCT4051 is a single eight-channel analog MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate C and it is pin to pin compatible with t he equivalent metal gate C MOS4000B series. It c onta ins 8 bidirectional and digitally controlled analog switches.
PIN CONNE CTION AND IEC LOGIC SYMBOLS
=4.5V) =9V)
) = 2 V TO 12V
=9V
2
MOS technology
M74HCT4051
SINGLE 8-CHANNEL
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP
SOP
TSSOP
A built-in level shifting is included to allow an input rangeupto±6V (peak) for an analog signal with digital control signal of 0 to 6V. V
EE
signals. It has an inhibit (INH) input terminal to disable all the switches when high, com pat ibl e with TTL out put level. For operation as a digital multiplexer/demultiplexer, VEE is connected to GND. A, B and C control inputs select one c hannel out of eight channels; they are compatible with TTL output level. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
M74HCT4051B1R
M74HCT4051M1R M74HCT4051RM13TR
M74HCT4051TTR
supply pin is provided for analog input
1/14March 2003
M74HCT4051
CONTROL INPUT EQUIVALENT CIRCUIT
I/O EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
3COM
OUT/IN 6 INH INHIBIT Input 7V
11, 10, 9 A, B, C Select Inputs
13, 14, 15,
12, 1,5,2,4
8 GND Ground (0V)
16 V
EE
0 to 7 Independent Input/Out-
CC
Common Output/Input
Negative Supply Voltage
puts
Positive Supply Voltage
TRUTH TABLE
INPUT STATE
INH C B A
LLLL 0 LLLH 1 LLHL 2 LLHH 3 LHLL 4 LHLH 5 LHHL 6 LHHH 7
H X X X NONE
ON CHANNEL
FUNCTIONAL DIAGRAM
2/14
M74HCT4051
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
CC -VEE
V
V
I
CK
I
IOK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mWat65
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V V
V
CC-VEE
V
V
T
t
r,tf
Supply Voltage
CC
Supply Voltage Control Input Voltage -0.5 to VCC+ 0.5
I
Switch I/O Voltage VEE-0.5 to VCC+0.5
I/O
Control Input Diode Current I/O Diode Current Switch Through Current
T
DC VCCor Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°Cfrom65°Cto85°C
Supply Voltage
CC
Supply Voltage
EE
Supply Voltage Input Voltage 0 to V
I
I/O Voltage VEEto V
I/O
Operating Temperature
op
Input Rise and Fall Time VCC= 4.5 to 5.5V
-0.5 to +7 V
-0.5 to +13 V
± 20 mA ± 20 mA ± 25 mA ± 50 mA
500(*) mW
-65 to +150 °C 300 °C
4.5 to 5.5 V
-6 to 0 V
2to12 V
CC
CC
-55 to 125 °C 0 to 500 ns
V V
V V
3/14
M74HCT4051
DC SPECIFICATIONS
Test Condition Value
Symbol Parameter
V
V
R
R
High Level Input
IHC
Voltage
Low Level Input
ILC
Voltage
ON Resistance 4.5 GND VI=V
ON
Difference of ON
ON
Resistance between switches
I
Input/Output
OFF
Leakage Current (SWITCH OFF)
Switch Input
I
IZ
Leakage Current (SWITCH ON, OUTPUT OPEN)
I
Input L eakage
I
Current
I
Quiescent Supply
CC
Current
I
Additional
CC
Quiescent Supply Current per input pin
V
(V)
CC
V
(V)
EE
= 25°C
T
A
-40 to 85°C
Min. Typ. Max. Min. Max. Min. Max.
-55 to
125°C
4.5 to
2.0 2.0 2.0 V
5.5
4.5 to
0.8 0.8 0.8 V
5.5
or V
IHC
V
4.5 -4.5 55 120 150 180
4.5 G ND V
4.5 -4.5 50 100 125 150
4.5 G ND V
4.5 -4.5 5 12 15 18
I/O=VCC
I
I/O
I=VIHC
V
I/O=VCC
I
I/O
I=VIHC
V
I/O=VCC
I
I/O
2mA
2mA
2mA
to V
or V
or V
or V
or V
ILC
EE
ILC
EE
ILC
EE
5.5 G ND VOS=VCCor GND
V
= GND or V
5.5 -6.0
5.5 G ND V
5.5 -6.0
IS
VI=V
ILC
OS=VCC
V
I=VIHC
or V
or GND
or V
CC
IHC
ILC
85 180 225 270
70 150 190 230
10 30 35 45
±
0.06
± 0.6 ± 1.0
± 0.1 ± 1 ± 1
±
0.06
± 0.6 ± 1.0
± 0.1 ± 1 ± 1
5.5 G ND VI=VCCor GND ± 0.1 ± 0.1 ± 1
5.5 G ND
5.5 -6.0 8 80 160
4.5 to
GND
V
I=VCC
V
other inp ut at V
5.5
I=VCC
or GND
or GND
- 2.1V
CC
100 360 450 490 µA
44080
Unit
µA
µA
µA
µA
4/14
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, Input tr=tf=6ns)
Test Condition Value
M74HCT4051
Symbol Parameter
Φ
Phase Difference
I/O
Between Input and Output
PZL
PZH
PLZ
PHZ
Output Enable Time
Output Disable Time
t t
t t
= 25°C
T
V
V
CC
EE
(V)
(V)
4.5 GND
= 50pF
C
4.5 -4.5 4 8 10 12
L
4.5 GND RL=1K
C
4.5 -4.5 11 34 43 51
= 50pF
L
4.5 GND RL=1K
C
4.5 -4.5 19 31 39 47
= 50pF
L
A
Min. Typ. Max. Min. Max. Min. Max.
512 15 18
13 45 56 68
25 38 48 58
-40 to 85°C
-55 to
125°C
Unit
ns
ns
ns
CAPACITANCE CHARACTERISTICS
Test Condition Value
Symbol Parameter
V
(V)
CC
V
(V)
EE
T
A
-40 to 85°C
= 25°C
Min. Typ. Max. Min. Max. Min. Max.
Input Capacitance 5.0 5 10 10 10 pF
C
IN
C
C
C
C
Common Terminal
I/O
Capacitance Switch Terminal
I/O
Capacitance Feed Through
IOS
Capacitance Power Dissipation
PD
Capacitance
5.0 -5.0 11 20 20 20 pF
5.0 -5.0 7 15 15 15 pF
5.0 -5.0 0.75 2 2 2 pF
5.0 GND 67 pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
-55 to
125°C
Unit
5/14
Loading...
+ 9 hidden pages