查询SD1728供应商
.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.IMD − 30 dB
. GOLD METALLIZATION
.COMMON EMITTER
.P
OUT
250 W PEP W ITH 14.5 dB GAIN
=
SD1728 (TH430)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.550 4LF L (M177)
epoxy sealed
ORDER CODE
SD1728
BRANDING
TH430
PIN CONNECTION
DESC RIPTION
The SD1728 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 40 A
Power Dissipation 330 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
THERMA L DA TA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 0.4 °C/W
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SD1728 (TH430)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CEO
I
CES
h
FE
= 200mA VBE= 0V 110 — — V
= 200mA IB= 0mA 55 — — V
= 20mA IC= 0mA 4.0 — — V
VCE= 30V IE= 0mA — — 10 mA
VCE= 60V IE= 0mA — — 10 mA
VCE= 6V IC= 10A 15 — 45 —
DYNAMIC
Symbol Test C ond itions
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: * Two Tone Method; f
f = 30 MHz VCC= 50 V ICQ= 150 mA 250 — — W
250 W PEP VCC= 50 V ICQ= 150 mA 14.5 — — dB
=
OUT
250 W PEP VCC= 50 V ICQ= 150 mA — — −30 dBc
=
OUT
250 W PEP VCC= 50 V ICQ= 150 mA 37 — — %
=
OUT
f = 1 MHz VCB= 50 V — — 360 pF
30.00 MHz; f
=
In Cl ass C: GPMi n. 13. 5 dB, Effici ency 65%@ 30MHz
GPMi n. 10 d B, Efficiency 57%@ 70MH z
1
30.001 MHz
=
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
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TYPICA L PERFO R MA NCE
SD1728 (TH430)
CLASS AB
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs
POWER OUTPUT PEP
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
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SD1728 (TH430)
TYPICA L PERFOR MA NCE (cont’ d)
POWER GAIN vs POWER OUTPUT PEP
TEST CIRC U I T SSB - CLAS S AB - 30 M H z
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C1 : Arco 429
C2 : Arco 4615
C3, C6 : Arco 4213
C4, C5,
C7 : Arco 4611
C8 : Arco 427
C9 : 470µF, 40V
C10, C14 : 100nF, 63V
C11, C13,
C15 : 1nF
C12 : 10nF
C16 : 220µF, 63V
L1 : 5 Turns, Diameter 10mm, 1.3mm Wire, Length 15mm
L2 : 2 Turns, Diameter 12mm, 2mm Wire, Length 8mm
L3 : 1 Turn, Diameter 12mm, 2mm Wire, Length 5mm
L4 : Hair Pin Copper Foil 20 x 5mm
L5 : 1 Turn, Diameter 12mm, 2mm Wire, Length 8mm
L6 : 5 Turns, Diameter 8mm, 1.3mm Wire, Length 18mm
L7 : 3 Turns, Diameter 8mm, 1.3mm Wire, Length 15mm
R : 0.25Ω*
* 4 Resistors 1Ω0.5W in parallel
TYPICA L PERFO R MA NCE
SD1728 (TH430)
CLASS C F = 30 MHz
POWER OUTPUT vs POWER INPUT
COLLECTOR EFFICIENCY
vs POWER OUTPUT
CLASS C F = 70 MHz
POWER OUTPUT vs POWER INPUT
COLLECTOR EFFICIENCY
vs POWER OUTPUT
5/9
SD1728 (TH430)
TYPICA L PERFOR MA NCE (cont’ d)
COL LECTOR BASE CAPACITANCE vs COLLECTOR BASE VOLTAGE
DC SAFE OPERATING AREA
6/9
IMPEDA NC E D ATA ( TY PICAL)
SD1728 (TH430)
P
= 250 W PEP
OUT
VCC= 50 V
7/9
SD1728 (TH430)
BIAS CIRCUIT
MOU NT I NG CIRC UI T
Parts list on test circuit drawing
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0177 rev. A
SD1728 (TH430)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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