ST RHF43B User Manual

Rad-hard precision bipolar single operational amplifier

Features

■ High radiation immunity: 300 kRad TID at

high/low dose rate (ELDRS-free), tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply

■ Rail-to-rail output

■ 8 MHz gain bandwidth at 16 V

■ Low input offset voltage: 100 µV typ

■ Supply current: 2.2 mA typ

■ Operating from 3 to 16 V

■ Input bias current: 30 nA typ

■ ESD internal protection ≥ 2kV

■ Latch-up immunity: 200 mA

■ QML-V RHA, ELDRS-free qualified under smd

5962-06237

RHF43B

Ceramic Flat-8

1

NC

IN -

IN +

-VCC

VDD

4

The upper metallic lid is not electrically connected to any

pins, nor to the IC die inside the package.

8

NC

+VCC

VCC

OUT

NC

5

Applications

■ Space probes and satellites

■ Defense systems

■ Scientific instrumentation

■ Nuclear systems

Description

The RHF43B is a precision bipolar operational amplifier available in a ceramic 8-pin flat package and in die form. ln addition to its low offset voltage, rail-to-rail feature and wide supply voltage, the RHF43B is designed for increased tolerance to radiation. Its intrinsic ELDRS-free rad-hard design allows this product to be used in space applications and in applications operating in harsh environments.

July 2011 Doc ID 13477 Rev 8 1/16

www.st.com

16

Absolute maximum ratings and operating conditions RHF43B

1 Absolute maximum ratings and operating conditions

Table 1. Absolute maximum ratings (AMR)

Symbol Parameter Value Unit

V

CC

V

I

IN

T

stg

R

thja

R

thjc

T

Supply voltage

Differential input voltage

id

Input voltage range

in

Input current 45 mA

Storage temperature -65 to +150 °C

Thermal resistance junction to ambient

Thermal resistance junction to case

Maximum junction temperature 150 °C

j

(1)

(3)

ESD HBM: human body model

(2)

(4)(5)

(6)

18 ±9

V

±1.2 V

VDD-0.3 to 16 V

125 °C/W

40 °C/W

2kV

Latch-up immunity 200 mA

Lead temperature (soldering, 10 sec) 260 °C

Radiation related parameters

Low dose rate of 0.01 rad.sec

Dose

(up to Vcc = 16 V)

High dose rate of 50-300 rad.sec (up to Vcc = 16 V)

HI

1. All values, except differential voltage are with respect to network terminal.

2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.

3. The magnitude of input and output terminal must never exceed V

4. Short-circuits can cause excessive heating and destructive dissipation.

5. R

th

6. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for

all couples of pin combinations with other pins floating.

Table 2. Operating conditions

Heavy ion latch-up (SEL) immune with heavy ions (up to Vcc = 14 V)

are typical values.

-1

300 kRad

-1

300 kRad

120 MeV.cm2/mg

+ 0.3 V.

CC

Symbol Parameter Value Unit

V

CC

V

icm

T

oper

Supply voltage 3 to 16 V

Common mode input voltage range VDD to V

Operating free air temperature range -55 to +125 °C

2/16 Doc ID 13477 Rev 8

CC

V

RHF43B Electrical characteristics

2 Electrical characteristics

Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2

(unless otherwise specified)

Symbol Parameter Test conditions

DC performance

I

V

DV

DI

R

C

CMR Common mode rejection ratio

SVR Supply rejection ratio

A

Supply current No load

CC

Offset voltage V

io

Input offset voltage drift - 1 μV/°C

io

I

Input bias current V

ib

Input offset current tempera-

ib

ture drift

I

Input offset current V

io

= VCC/2

icm

= VCC/2

icm

V

= VCC/2 - 100 pA/°C

icm

= VCC/2

icm

Differential input resistance between in+ and in-

in

Input resistance between in+ (or in-) and GND

Differential input capacitance between in+ and in-

in

Input capacitance between in+ (or in-) and GND

< 16 V

icm

<16 V

CC

= VCC/2

icm

= 0.5 V to 15.5 V

out

=1kΩ

L

< 16 V

icm

Large signal voltage gain

VD

0 < V

3V < V V

V R 0 < V

Ambient

temp.

Min. Typ. Max. Unit

+125°C 2.9

-55°C 2.9

+125°C -500 500

-55°C -500 500

+125°C -100 100

-55°C -100 100

+125°C -35 35

-55°C -35 35

+25°C 0.16

+25°C 2000

+25°C 8

+25°C 2

+125°C 72

-55°C 72

+125°C 80

-55°C 80

+125°C 60

-55°C 60

mA+25°C 2.5 2.9

µV+25°C -300 100 300

nA+25°C -60 30 60

nA+25°C -15 1 15

MΩ

pF

dB+25°C 72 110

dB+25°C 90 120

dB+25°C 74 85

Doc ID 13477 Rev 8 3/16

Electrical characteristics RHF43B

A

Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2

(unless otherwise specified) (continued)

Symbol Parameter Test conditions

RL=1kΩ

V

High level output voltage

OH

RL=10kΩ

=1kΩ

R

L

V

I

Low level output voltage

OL

Output sink current V

out

Output source current V

R

L

out

=10kΩ

= V

CC

= V

CC

Ambient

temp.

Min. Typ. Max. Unit

+125°C 15.6

+25°C 15.7 15.8

-55°C 15.6

+125°C 15.8

+25°C 15.9 15.96

-55°C 15.8

+125°C 0.3

+25°C 0.1 0.2

-55°C 0.3

+125°C 0.1

+25°C 0.04 0.06

-55°C 0.1

+125°C 15

+25°C 20 30

-55°C 15

+125°C 10

+25°C 15 25

-55°C 10

V

mA

AC performance

GBP Gain bandwidth product

F

Unity gain frequency RL=1kΩ, CL= 100 pF +25°C 5 MHz

u

φm Phase margin

SR Slew rate R

e

THD+e

Equivalent input noise voltage F = 1 kHz +25°C 7.5

n

Equivalent input noise current F = 1 kHz +25°C 1

i

n

Total harmonic distortion

n

F = 100 kHz

=1kΩ, CL= 100 pF

R

L

Gain = +5

=1kΩ, CL= 100 pF

R

L

=1kΩ, CL= 100 pF

L

V

= (VCC-1 V)/5

out

Gain = -5.1 V

icm=VCC

4/16 Doc ID 13477 Rev 8

+125°C 3.5

MHz+25°C 6 8

-55°C 3.5

+25°C 50 Degrees

+125°C 1.7

V/μs+25°C 2 3

-55°C 1.7

nV

-----------Hz

p

-----------Hz

+25°C 0.01 %

/2

RHF43B Electrical characteristics

Table 4. 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2

(unless otherwise specified)

Symbol Parameter Test conditions

DC performance

I

V

DV

DI

R

C

CMR Common mode rejection ratio

A

Supply current No load

CC

Offset voltage

io

Input offset voltage drift - 1 μV/°C

io

= +4 V

V

I

Input bias current

ib

Input offset current tempera-

ib

ture drift

Input offset current

I

io

CC

= VCC/2

V

icm

VCC = +4 V

= VCC/2

V

icm

= +4 V

V

CC

V

= VCC/2

icm

Differential input resistance between in+ and in-

in

Input resistance between in+ (or in-) and GND

Differential input capacitance between in+ and in-

in

Input capacitance between in+ (or in-) and GND

< 3 V

icm

= 0.5 V to 2.5 V

out

< 3 V

icm

Large signal voltage gain

VD

0 < V

V RL=1kΩ 0 < V

Ambient

temp.

Min. Typ. Max. Unit

+125°C 2.6

mA+25°C 2.2 2.6

-55°C 2.6

+125°C -500 500

µV+25°C -300 100 300

-55°C -500 500

+125°C -100 100

nA+25°C -60 30 60

-55°C -100 100

-100pA/°C

+125°C -35 35

nA+25°C -15 1 15

-55°C -35 35

+25°C 0.16

MΩ

+25°C 2000

+25°C 8

pF

+25°C 2

+125°C 72

dB+25°C 72 90

-55°C 72

+125°C 60

dB+25°C 74 85

-55°C 60

Doc ID 13477 Rev 8 5/16