Rad-hard precision bipolar single operational amplifier
Features
■ High radiation immunity: 300 kRad TID at
high/low dose rate (ELDRS-free), tested
immunity of SEL /SEU at 125° C under
120 MeV/mg/cm² LET ions, 14 V supply
■ Rail-to-rail output
■ 8 MHz gain bandwidth at 16 V
■ Low input offset voltage: 100 µV typ
■ Supply current: 2.2 mA typ
■ Operating from 3 to 16 V
■ Input bias current: 30 nA typ
■ ESD internal protection ≥ 2kV
■ Latch-up immunity: 200 mA
■ QML-V RHA, ELDRS-free qualified under smd
5962-06237
RHF43B
Ceramic Flat-8
Ceramic Flat-8
1
1
NC
NC
IN -
IN -
IN +
IN +
-VCC
-VCC
VDD
VDD
4
4
The upper metallic lid is not electrically connected to any
pins, nor to the IC die inside the package.
8
8
NC
NC
+VCC
+VCC
VCC
VCC
OUT
OUT
NC
NC
5
5
Applications
■ Space probes and satellites
■ Defense systems
■ Scientific instrumentation
■ Nuclear systems
Description
The RHF43B is a precision bipolar operational
amplifier available in a ceramic 8-pin flat package
and in die form. ln addition to its low offset
voltage, rail-to-rail feature and wide supply
voltage, the RHF43B is designed for increased
tolerance to radiation. Its intrinsic ELDRS-free
rad-hard design allows this product to be used in
space applications and in applications operating
in harsh environments.
July 2011 Doc ID 13477 Rev 8 1/16
www.st.com
16
Absolute maximum ratings and operating conditions RHF43B
1 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings (AMR)
Symbol Parameter Value Unit
V
CC
V
V
I
IN
T
stg
R
thja
R
thjc
T
Supply voltage
Differential input voltage
id
Input voltage range
in
Input current 45 mA
Storage temperature -65 to +150 °C
Thermal resistance junction to ambient
Thermal resistance junction to case
Maximum junction temperature 150 °C
j
(1)
(3)
ESD HBM: human body model
(2)
(4)(5)
(4)(5)
(6)
18
±9
V
±1.2 V
VDD-0.3 to 16 V
125 °C/W
40 °C/W
2kV
Latch-up immunity 200 mA
Lead temperature (soldering, 10 sec) 260 °C
Radiation related parameters
Low dose rate of 0.01 rad.sec
Dose
(up to Vcc = 16 V)
High dose rate of 50-300 rad.sec
(up to Vcc = 16 V)
HI
1. All values, except differential voltage are with respect to network terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output terminal must never exceed V
4. Short-circuits can cause excessive heating and destructive dissipation.
5. R
th
6. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
Table 2. Operating conditions
Heavy ion latch-up (SEL) immune with heavy ions
(up to Vcc = 14 V)
are typical values.
-1
300 kRad
-1
300 kRad
120 MeV.cm2/mg
+ 0.3 V.
CC
Symbol Parameter Value Unit
V
CC
V
icm
T
oper
Supply voltage 3 to 16 V
Common mode input voltage range VDD to V
Operating free air temperature range -55 to +125 °C
2/16 Doc ID 13477 Rev 8
CC
V
RHF43B Electrical characteristics
2 Electrical characteristics
Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions
DC performance
I
V
DV
DI
R
C
CMR Common mode rejection ratio
SVR Supply rejection ratio
A
Supply current No load
CC
Offset voltage V
io
Input offset voltage drift - 1 μV/°C
io
I
Input bias current V
ib
Input offset current tempera-
ib
ture drift
I
Input offset current V
io
= VCC/2
icm
= VCC/2
icm
V
= VCC/2 - 100 pA/°C
icm
= VCC/2
icm
Differential input resistance
between in+ and in-
in
Input resistance between in+
(or in-) and GND
Differential input capacitance
between in+ and in-
in
Input capacitance between
in+ (or in-) and GND
< 16 V
icm
<16 V
CC
= VCC/2
icm
= 0.5 V to 15.5 V
out
=1kΩ
L
< 16 V
icm
Large signal voltage gain
VD
0 < V
3V < V
V
V
R
0 < V
Ambient
temp.
Min. Typ. Max. Unit
+125°C 2.9
-55°C 2.9
+125°C -500 500
-55°C -500 500
+125°C -100 100
-55°C -100 100
+125°C -35 35
-55°C -35 35
+25°C 0.16
+25°C 2000
+25°C 8
+25°C 2
+125°C 72
-55°C 72
+125°C 80
-55°C 80
+125°C 60
-55°C 60
mA+25°C 2.5 2.9
µV+25°C -300 100 300
nA+25°C -60 30 60
nA+25°C -15 1 15
MΩ
pF
dB+25°C 72 110
dB+25°C 90 120
dB+25°C 74 85
Doc ID 13477 Rev 8 3/16
Electrical characteristics RHF43B
A
Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2
(unless otherwise specified) (continued)
Symbol Parameter Test conditions
RL=1kΩ
V
High level output voltage
OH
RL=10kΩ
=1kΩ
R
L
V
I
Low level output voltage
OL
Output sink current V
out
Output source current V
R
L
out
out
=10kΩ
= V
CC
= V
CC
Ambient
temp.
Min. Typ. Max. Unit
+125°C 15.6
+25°C 15.7 15.8
-55°C 15.6
+125°C 15.8
+25°C 15.9 15.96
-55°C 15.8
+125°C 0.3
+25°C 0.1 0.2
-55°C 0.3
+125°C 0.1
+25°C 0.04 0.06
-55°C 0.1
+125°C 15
+25°C 20 30
-55°C 15
+125°C 10
+25°C 15 25
-55°C 10
V
V
mA
AC performance
GBP Gain bandwidth product
F
Unity gain frequency RL=1kΩ, CL= 100 pF +25°C 5 MHz
u
φm Phase margin
SR Slew rate R
e
THD+e
Equivalent input noise voltage F = 1 kHz +25°C 7.5
n
Equivalent input noise current F = 1 kHz +25°C 1
i
n
Total harmonic distortion
n
F = 100 kHz
=1kΩ, CL= 100 pF
R
L
Gain = +5
=1kΩ, CL= 100 pF
R
L
=1kΩ, CL= 100 pF
L
V
= (VCC-1 V)/5
out
Gain = -5.1
V
icm=VCC
4/16 Doc ID 13477 Rev 8
+125°C 3.5
MHz+25°C 6 8
-55°C 3.5
+25°C 50 Degrees
+125°C 1.7
V/μs+25°C 2 3
-55°C 1.7
nV
-----------Hz
p
-----------Hz
+25°C 0.01 %
/2
RHF43B Electrical characteristics
Table 4. 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions
DC performance
I
V
DV
DI
R
C
CMR Common mode rejection ratio
A
Supply current No load
CC
Offset voltage
io
Input offset voltage drift - 1 μV/°C
io
= +4 V
V
I
Input bias current
ib
Input offset current tempera-
ib
ture drift
Input offset current
I
io
CC
= VCC/2
V
icm
VCC = +4 V
= VCC/2
V
icm
= +4 V
V
CC
V
= VCC/2
icm
Differential input resistance
between in+ and in-
in
Input resistance between in+
(or in-) and GND
Differential input capacitance
between in+ and in-
in
Input capacitance between
in+ (or in-) and GND
< 3 V
icm
= 0.5 V to 2.5 V
out
< 3 V
icm
Large signal voltage gain
VD
0 < V
V
RL=1kΩ
0 < V
Ambient
temp.
Min. Typ. Max. Unit
+125°C 2.6
mA+25°C 2.2 2.6
-55°C 2.6
+125°C -500 500
µV+25°C -300 100 300
-55°C -500 500
+125°C -100 100
nA+25°C -60 30 60
-55°C -100 100
-100pA/°C
+125°C -35 35
nA+25°C -15 1 15
-55°C -35 35
+25°C 0.16
MΩ
+25°C 2000
+25°C 8
pF
+25°C 2
+125°C 72
dB+25°C 72 90
-55°C 72
+125°C 60
dB+25°C 74 85
-55°C 60
Doc ID 13477 Rev 8 5/16
Electrical characteristics RHF43B
A
Table 4. 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2
(unless otherwise specified) (continued)
Symbol Parameter Test conditions
RL=1kΩ
V
High level output voltage
OH
RL=10kΩ
=1kΩ
R
L
V
I
Low level output voltage
OL
Output sink current V
out
Output source current V
R
L
out
out
=10kΩ
= V
CC
= V
CC
Ambient
temp.
Min. Typ. Max. Unit
+125°C 2.8
+25°C 2.9 2.95
-55°C 2.8
+125°C 2.9
+25°C 2.94 2.98
-55°C 2.9
+125°C 0.2
+25°C 0.05 0.1
-55°C 0.2
+125°C 0.1
+25°C 0.02 0.06
-55°C 0.1
+125°C 15
+25°C 20 30
-55°C 15
+125°C 10
+25°C 15 25
-55°C 10
V
V
mA
AC performance
GBP Gain bandwidth product
F
Unity gain frequency RL=1kΩ, CL= 100 pF +25°C 5 MHz
u
φm Phase margin
SR Slew rate R
e
THD+e
Equivalent input noise voltage F = 1 kHz +25°C 7
n
Equivalent input noise current F = 1 kHz +25°C 0.8
i
n
Total harmonic distortion
n
F = 100 kHz
=1kΩ, CL= 100 pF
R
L
Gain = +5
=1kΩ, CL= 100 pF
R
L
=1kΩ, CL= 100 pF
L
V
= (VCC-1 V)/5
out
Gain = -5.1
V
icm=VCC
6/16 Doc ID 13477 Rev 8
+125°C 3.5
MHz+25°C 6 7.5
-55°C 3.5
+25°C 50 Degrees
+125°C 1.7
V/μs+25°C 2 2.7
-55°C 1.7
nV
-----------Hz
p
-----------Hz
+25°C 0.01 %
/2
RHF43B Electrical characteristics
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
−2.0
−1.5
−1.0
−0.5
0.0
0.5
1.0
Vcc = 4V
T= +125°C
T= +25°C
T= −55°C
Input bias current ( A)
Input Common Mode Voltage (V)
Figure 1. Input offset voltage distribution Figure 2. Input bias current vs. supply voltage
Figure 3. Input bias current vs. Vicm at
Figure 4. Input bias current vs. Vicm at
V
CC
=3V
VCC=4V
Figure 5. Input bias current vs. Vicm at
V
=16V
CC
1.0
0.5
T= +125°C
0.0
−0.5
−1.0
Input bias current ( A)
−1.5
−2.0
0246810121416
T= +25°C
T= −55°C
Input Common Mode Voltage (V)
Figure 6. Supply current vs. Vicm in follower
configuration at VCC=3V
Vcc = 16V
Doc ID 13477 Rev 8 7/16
Electrical characteristics RHF43B
Figure 7. Supply current vs. Vicm in follower
configuration at V
CC
=16V
Figure 9. Output current vs. supply voltage at
V
= VCC/2
icm
Figure 8. Supply current vs. supply voltage
at V
icm=VCC
/2
Figure 10. Output current vs. output voltage at
VCC= 3 V
Figure 11. Output current vs. output voltage at
V
= 16 V
CC
8/16 Doc ID 13477 Rev 8
Figure 12. Differential input voltage vs. output
voltage at VCC=3V
RHF43B Electrical characteristics
Vcc=16V, Vicm=2.5V, Tamb=25°C
Vcc=3V, Vicm=2.5V, Tamb=25°C
Input equivalent noise density (nV/VHz)
Figure 13. Differential input voltage vs. output
voltage at V
CC
= 16 V
Figure 15. Voltage gain and phase vs.
frequency at V
50
4040
30
2020
10
00
Gain (dB)
−1 0
−2 0−2 0
−3 0
−4 0−4 0
−5 0
Vcc=3V, Vicm=1.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
4
10
5
10
icm
10
6
=1.5V
180
150150
120120
9090
6060
3030
0
−3 0−3 0
Phase (°)
−6 0−6 0
−9 0−9 0
−120−120
−150−150
−180
7
10
Figure 14. Noise vs. frequency at V
V
= 16 V
CC
CC
Figure 16. Voltage gain and phase vs.
frequency at V
50
4040
30
2020
10
00
Gain (dB)
−1 0
−2 0−2 0
−3 0
−4 0−4 0
−5 0
Vcc=3V, Vicm=2.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
4
10
5
10
icm
10
6
=2.5V
10
= 3 V and
180
150150
120120
9090
6060
3030
0
−3 0−3 0
−6 0−6 0
−9 0−9 0
−1 2 0−1 2 0
−1 5 0−1 5 0
−1 8 0
7
Phase (°)
Figure 17. Voltage gain and phase vs.
frequency at V
50
4040
30
2020
10
00
Gain (dB)
−1 0
−2 0−2 0
−3 0
−4 0−4 0
−5 0
Vcc=3V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
4
10
5
10
icm
10
=0.5V
6
Figure 18. Voltage gain and phase vs.
frequency at V
180
150150
120120
9090
6060
3030
0
−3 0−3 0
Phase (°)
−6 0−6 0
−9 0−9 0
−120−120
−150−150
−180
7
10
Doc ID 13477 Rev 8 9/16
50
4040
30
2020
10
00
Gain (dB)
−1 0
−2 0−2 0
−3 0
−4 0−4 0
−5 0
Vcc=16V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
4
10
5
10
icm
10
6
=8V
7
10
180
150150
120120
9090
6060
3030
0
−3 0−3 0
−6 0−6 0
−9 0−9 0
−1 2 0−1 2 0
−1 5 0−1 5 0
−1 8 0
Phase (°)
Electrical characteristics RHF43B
-1.0-1.0 0.0 1.01.0 2.0 3.03.0 4.0 5.05.0 6.0 7.07.0 8.0 9.09.0
-8-8
-6-6
-4-4
-2-2
00
22
44
66
88
Vcc=16V, Vin=1Vpp,
G= -100
Output Voltage (V))
Figure 19. Voltage gain and phase vs.
frequency at V
50
4040
30
2020
10
00
Gain (dB)
−1 0
−2 0−2 0
−3 0
−4 0−4 0
−5 0
Vcc=16V, Vicm=15.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
4
10
5
10
icm
10
6
=15.5V
10
Figure 21. Inverting large signal pulse
response at V
2.02.0
1.51.5
1.01.0
0.50.5
0.00.0
-0.5-0.5
Output Voltage (V))
-1.0-1.0
-1.5-1.5
-2.0-2.0
-0.5 0.00.00.51.01.52.02.0 2.5 3.0 3.5 4.04.0 4.5
=3V, +25°C
CC
Vcc=3V, Vin=1Vpp
G=-100
Figure 20. Voltage gain and phase vs.
frequency at V
180
150150
120120
9090
6060
3030
0
−3 0−3 0
Phase (°)
−6 0−6 0
−9 0−9 0
−120−120
−150−150
−180
7
50
4040
30
2020
10
00
Gain (dB)
−1 0
−2 0−2 0
−3 0
−4 0−4 0
−5 0
Vcc=16V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
4
10
5
10
icm
10
6
=0.5V
180
150150
120120
9090
6060
3030
0
−3 0−3 0
Phase (°)
−6 0−6 0
−9 0−9 0
−1 2 0−1 2 0
−1 5 0−1 5 0
−1 8 0
7
10
Figure 22. Inverting Large signal pulse
response at VCC=16V, +25°C
10/16 Doc ID 13477 Rev 8
RHF43B Achieving good stability at low gains
3 Achieving good stability at low gains
At low frequencies, the RHF43B can be used in a low gain configuration as shown in
Figure 23. At lower frequencies, the stability is not affected by the value of the gain, which
can be set close to 1 V/V (0 dB), and is reduced to its simplest expression G1=1+Rfb/Rg.
Therefore, an R-C cell is added in the gain network so that the gain is increased (up to 5) at
higher frequencies (where the stability of the amplifier could be affected). At higher
frequencies, the gain becomes G2=1+Rfb/(Rg//R).
Figure 23. Low gain configuration Figure 24. Closed-loop gain
Gain
(dB)
0 dB
Frequencies
where the
op-amp can
be used
2πRC
+20 dB/dec
G1
2 π(G1R+Rfb)C
V
CC
Vin
C
R
+
Vout
-
VDD
Rfb = 2 kΩ
Rg
CL = 100 pF
L
R
1 kΩ
AM06122
A
VD
1
G2=1+Rfb/(Rg//R)
-
20 dB/dec
G1=1+Rfb//Rg
Gain bandwidth
product
Bandwidth
of the
op-amp at G2
Log frequency
AM06123
Rg becomes a complex impedance. The closed-loop gain features a variation in frequency
and can be expressed as:
G1R Rfb+
⎛⎞
---------------------------- -
×+
⎝⎠
G1
1 jCRω+
=
Gain G1
1jCω
-------------------------------------------------------------
where a pole appears at 1/2πRC and a zero at G1/2π(G1R+Rfb)C. The frequency can be
plotted as shown in Figure 24.
Table 5. External components versus low-frequency gain
G1 (V/V) R (Ω)C (nF)Rg (Ω)Rfb (Ω)
1.1 510 1 20k 2k
251012k2k
351011k2k
4 510 1 750 2.4k
5 Not connected Not connected 820 3.3k
Doc ID 13477 Rev 8 11/16
Package information RHF43B
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
12/16 Doc ID 13477 Rev 8
RHF43B Package information
4.1 Ceramic Flat-8 package information
Figure 25. Ceramic Flat-8 package mechanical drawing
Note: The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the
package. Connecting unused pins or metal lid to ground or to the power supply will not affect
the electrical characteristics.
Table 6. Ceramic Flat-8 package mechanical data
Dimensions
Ref.
Min. Typ. Max. Min. Typ. Max.
A 2.24 2.44 2.64 0.088 0.096 0.104
b 0.38 0.43 0.48 0.015 0.017 0.019
c 0.10 0.13 0.16 0.004 0.005 0.006
D 6.35 6.48 6.61 0.250 0.255 0.260
E 6.35 6.48 6.61 0.250 0.255 0.260
E2 4.32 4.45 4.58 0.170 0.175 0.180
E3 0.88 1.01 1.14 0.035 0.040 0.045
e 1.27 0.050
L 6.51 7.38 0.256 0.291
Q 0.66 0.79 0.92 0.026 0.031 0.092
S1 0.92 1.12 1.32 0.036 0.044 0.052
N08 08
Millimeters Inches
Doc ID 13477 Rev 8 13/16
Ordering information RHF43B
5 Ordering information
Table 7. Order codes
Order code SMD pin Quality level Package
RHF43BK1 -
RHF43BK-01V
RHF43BDIE2V
5962F062370
5962F062370
1VXC
1V9A
Lead
finish
Engineering
model
Flat-8 Gold Strip pack RHF43BK1 -
QMLV-Flight Flat-8 Gold Strip pack
Packing Marking EPPL
5962F06237
01VXC
QMLV-Flight Die - Strip pack - -
Y
Note: Contact your ST sales office for information regarding the specific conditions for products in
die form and QML-Q versions.
14/16 Doc ID 13477 Rev 8
RHF43B Revision history
6 Revision history
Table 8. Document revision history
Date Revision Changes
21-May-2007 1 First public release.
Changed name of pins on pinout diagram on cover page.
10-Dec-2007 2
29-Jan-2008 3
11-May-2009 4
15-Oct-2009 5
Modified supply current values over temperature range in electrical
characteristics.
Power dissipation removed from AMR table.
Added ELRS-free rad-hard design in description on cover page.
Modified description of heavy ion latch-up (SEL) immunity parameter
in Table 1 on page 2.
Updated radiation immunity in Features on page 1 and in Ta bl e 1 o n
page 2.
Updated smb reference in Features on page 1.
Updated test conditions for Avd vs. Vicm in Table 3 on page 3 and
Table 4 on page 5.
Updated input current and voltage noise in Ta b le 3 .
Updated order codes in Table 7 on page 14.
Added Figure 4 and Figure 5.
30-Mar-2010 6
Added information for ambient temperature in Ta bl e 3 and Ta b le 4 .
Added Chapter 3.
20-Aug-2010 7 Corrected "L" dimension in Ta bl e 6 .
27-Jul-2011 8
Added Note: on page 13 and in the "Pin connections" diagram on the
coverpage.
Doc ID 13477 Rev 8 15/16
RHF43B
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