ST RHF43B User Manual
Rad-hard precision bipolar single operational amplifier
Features
■ High radiation immunity: 300 kRad TID at
high/low dose rate (ELDRS-free), tested
immunity of SEL /SEU at 125° C under
120 MeV/mg/cm² LET ions, 14 V supply
■ Rail-to-rail output
■ 8 MHz gain bandwidth at 16 V
■ Low input offset voltage: 100 µV typ
■ Supply current: 2.2 mA typ
■ Operating from 3 to 16 V
■ Input bias current: 30 nA typ
■ ESD internal protection ≥ 2kV
■ Latch-up immunity: 200 mA
■ QML-V RHA, ELDRS-free qualified under smd
5962-06237
RHF43B
Ceramic Flat-8
Ceramic Flat-8
1
1
NC
NC
IN -
IN -
IN +
IN +
-VCC
-VCC
VDD
VDD
4
4
The upper metallic lid is not electrically connected to any
pins, nor to the IC die inside the package.
8
8
NC
NC
+VCC
+VCC
VCC
VCC
OUT
OUT
NC
NC
5
5
Applications
■ Space probes and satellites
■ Defense systems
■ Scientific instrumentation
■ Nuclear systems
Description
The RHF43B is a precision bipolar operational
amplifier available in a ceramic 8-pin flat package
and in die form. ln addition to its low offset
voltage, rail-to-rail feature and wide supply
voltage, the RHF43B is designed for increased
tolerance to radiation. Its intrinsic ELDRS-free
rad-hard design allows this product to be used in
space applications and in applications operating
in harsh environments.
July 2011 Doc ID 13477 Rev 8 1/16
www.st.com
16
Absolute maximum ratings and operating conditions RHF43B
1 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings (AMR)
Symbol Parameter Value Unit
V
CC
V
V
I
IN
T
stg
R
thja
R
thjc
T
Supply voltage
Differential input voltage
id
Input voltage range
in
Input current 45 mA
Storage temperature -65 to +150 °C
Thermal resistance junction to ambient
Thermal resistance junction to case
Maximum junction temperature 150 °C
j
(1)
(3)
ESD HBM: human body model
(2)
(4)(5)
(4)(5)
(6)
18
±9
V
±1.2 V
VDD-0.3 to 16 V
125 °C/W
40 °C/W
2kV
Latch-up immunity 200 mA
Lead temperature (soldering, 10 sec) 260 °C
Radiation related parameters
Low dose rate of 0.01 rad.sec
Dose
(up to Vcc = 16 V)
High dose rate of 50-300 rad.sec
(up to Vcc = 16 V)
HI
1. All values, except differential voltage are with respect to network terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output terminal must never exceed V
4. Short-circuits can cause excessive heating and destructive dissipation.
5. R
th
6. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
Table 2. Operating conditions
Heavy ion latch-up (SEL) immune with heavy ions
(up to Vcc = 14 V)
are typical values.
-1
300 kRad
-1
300 kRad
120 MeV.cm2/mg
+ 0.3 V.
CC
Symbol Parameter Value Unit
V
CC
V
icm
T
oper
Supply voltage 3 to 16 V
Common mode input voltage range VDD to V
Operating free air temperature range -55 to +125 °C
2/16 Doc ID 13477 Rev 8
CC
V
RHF43B Electrical characteristics
2 Electrical characteristics
Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions
DC performance
I
V
DV
DI
R
C
CMR Common mode rejection ratio
SVR Supply rejection ratio
A
Supply current No load
CC
Offset voltage V
io
Input offset voltage drift - 1 μV/°C
io
I
Input bias current V
ib
Input offset current tempera-
ib
ture drift
I
Input offset current V
io
= VCC/2
icm
= VCC/2
icm
V
= VCC/2 - 100 pA/°C
icm
= VCC/2
icm
Differential input resistance
between in+ and in-
in
Input resistance between in+
(or in-) and GND
Differential input capacitance
between in+ and in-
in
Input capacitance between
in+ (or in-) and GND
< 16 V
icm
<16 V
CC
= VCC/2
icm
= 0.5 V to 15.5 V
out
=1kΩ
L
< 16 V
icm
Large signal voltage gain
VD
0 < V
3V < V
V
V
R
0 < V
Ambient
temp.
Min. Typ. Max. Unit
+125°C 2.9
-55°C 2.9
+125°C -500 500
-55°C -500 500
+125°C -100 100
-55°C -100 100
+125°C -35 35
-55°C -35 35
+25°C 0.16
+25°C 2000
+25°C 8
+25°C 2
+125°C 72
-55°C 72
+125°C 80
-55°C 80
+125°C 60
-55°C 60
mA+25°C 2.5 2.9
µV+25°C -300 100 300
nA+25°C -60 30 60
nA+25°C -15 1 15
MΩ
pF
dB+25°C 72 110
dB+25°C 90 120
dB+25°C 74 85
Doc ID 13477 Rev 8 3/16
Electrical characteristics RHF43B
A
Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2
(unless otherwise specified) (continued)
Symbol Parameter Test conditions
RL=1kΩ
V
High level output voltage
OH
RL=10kΩ
=1kΩ
R
L
V
I
Low level output voltage
OL
Output sink current V
out
Output source current V
R
L
out
out
=10kΩ
= V
CC
= V
CC
Ambient
temp.
Min. Typ. Max. Unit
+125°C 15.6
+25°C 15.7 15.8
-55°C 15.6
+125°C 15.8
+25°C 15.9 15.96
-55°C 15.8
+125°C 0.3
+25°C 0.1 0.2
-55°C 0.3
+125°C 0.1
+25°C 0.04 0.06
-55°C 0.1
+125°C 15
+25°C 20 30
-55°C 15
+125°C 10
+25°C 15 25
-55°C 10
V
V
mA
AC performance
GBP Gain bandwidth product
F
Unity gain frequency RL=1kΩ, CL= 100 pF +25°C 5 MHz
u
φm Phase margin
SR Slew rate R
e
THD+e
Equivalent input noise voltage F = 1 kHz +25°C 7.5
n
Equivalent input noise current F = 1 kHz +25°C 1
i
n
Total harmonic distortion
n
F = 100 kHz
=1kΩ, CL= 100 pF
R
L
Gain = +5
=1kΩ, CL= 100 pF
R
L
=1kΩ, CL= 100 pF
L
V
= (VCC-1 V)/5
out
Gain = -5.1
V
icm=VCC
4/16 Doc ID 13477 Rev 8
+125°C 3.5
MHz+25°C 6 8
-55°C 3.5
+25°C 50 Degrees
+125°C 1.7
V/μs+25°C 2 3
-55°C 1.7
nV
-----------Hz
p
-----------Hz
+25°C 0.01 %
/2
RHF43B Electrical characteristics
Table 4. 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions
DC performance
I
V
DV
DI
R
C
CMR Common mode rejection ratio
A
Supply current No load
CC
Offset voltage
io
Input offset voltage drift - 1 μV/°C
io
= +4 V
V
I
Input bias current
ib
Input offset current tempera-
ib
ture drift
Input offset current
I
io
CC
= VCC/2
V
icm
VCC = +4 V
= VCC/2
V
icm
= +4 V
V
CC
V
= VCC/2
icm
Differential input resistance
between in+ and in-
in
Input resistance between in+
(or in-) and GND
Differential input capacitance
between in+ and in-
in
Input capacitance between
in+ (or in-) and GND
< 3 V
icm
= 0.5 V to 2.5 V
out
< 3 V
icm
Large signal voltage gain
VD
0 < V
V
RL=1kΩ
0 < V
Ambient
temp.
Min. Typ. Max. Unit
+125°C 2.6
mA+25°C 2.2 2.6
-55°C 2.6
+125°C -500 500
µV+25°C -300 100 300
-55°C -500 500
+125°C -100 100
nA+25°C -60 30 60
-55°C -100 100
-100pA/°C
+125°C -35 35
nA+25°C -15 1 15
-55°C -35 35
+25°C 0.16
MΩ
+25°C 2000
+25°C 8
pF
+25°C 2
+125°C 72
dB+25°C 72 90
-55°C 72
+125°C 60
dB+25°C 74 85
-55°C 60
Doc ID 13477 Rev 8 5/16
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