The upper metallic lid is not electrically connected to any
pins, nor to the IC die inside the package.
110 MEV.cm²/mg
■ QMLV qualified under SMD 5962-0723201
■ Mass: 0.45 g
Description
The RHF350 is a current feedback operational
Applications
■ Communication satellites
■ Space data acquisition systems
■ Aerospace instrumentation
■ Nuclear and high energy physics
■ Harsh radiation environments
■ ADC drivers
amplifier that uses very high speed
complementary technology to provide a
bandwidth of up to 410 MHz while drawing only
4.1 mA of quiescent current. With a slew rate of
940 V/µs and an output stage optimized for
driving a standard 100 Ω load, this circuit is highly
suitable for applications where speed and powersaving are the main requirements. The device is a
single operator available in a Flat-8 hermetic
ceramic package, saving board space as well as
providing excellent thermal and dynamic
performance.
RHF350Absolute maximum ratings and operating conditions
1 Absolute maximum ratings and operating conditions
Table 2.Absolute maximum ratings
SymbolParameterValueUnit
V
T
T
R
R
P
Supply voltage
CC
V
Differential input voltage
id
Input voltage range
V
in
Operating free-air temperature range-40 to + 85°C
oper
Storage temperature-65 to +150°C
stg
Maximum junction temperature150°C
T
j
Flat-8 thermal resistance junction to ambient 50°C/W
thja
Flat-8 thermal resistance junction to case 30°C/W
thjc
Flat-8 maximum power dissipation
max
= 150° C
T
j
HBM: human body model
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
MM: machine model
ESD
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
CDM: charged device model
pins 1, 4, 5, 6, 7 and 8
pins 2 and 3
Latch-up immunity200mA
1. All voltages values are measured with respect to the ground pin.
2. Differential voltage are non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltage must never exceed VCC +0.3 V.
4. Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on all
amplifiers.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a
1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
6. This is a minimum value.
Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of
connected pin combinations while the other pins are floating.
7. Charged device model: all pins and package are charged together to the specified voltage and then
discharged directly to the ground through only one pin.
: worst case of the parameter on a standard sample across the temperature range. The evaluation is
max
Gain (V/V)+ 1- 1+ 2- 2+ 10- 10
R
(Ω)820300300300300300
fb
V
Doc ID 15604 Rev 35/20
Electrical characteristicsRHF350
Figure 1.Frequency response, positive gain Figure 2.Flatness, gain = +1
25
20
Gain=+10, Rfb=300Ω, Rg=33
15
10
Gain=+4, Rfb=300Ω, Rg=100
5
Gain=+2, Rfb=300Ω, Rg=300
0
Gain=+1, Rfb=820
-5
Gain (dB)
-10
-15
-20
Small Signal
Vcc=+5V
-25
-30
1M10M100M1G
Load=100
Ω
Ω
Ω
Ω
Ω
Frequency (Hz)
0.4
0.2
0.0
Gain (dB)
-0.2
Small Signal
Vcc=+5V
Gain=+1
-0.4
1M10M100M1G
Load=100
Ω
Frequency (Hz)
Figure 3.Flatness, gain = +2Figure 4.Flatness, gain = +4
6.4
6.2
12.2
12.0
6.0
Gain (dB)
5.8
Small Signal
Vcc=+5V
Gain=+2
5.6
1M10M100M1G
Load=100
Ω
11.8
Gain (dB)
11.6
Small Signal
Vcc=+5V
Gain=+4
11.4
Load=100
1M10M100M1G
Frequency (Hz)
Figure 5.Flatness, gain = +10Figure 6.Slew rate
20.2
20.0
19.8
Small Signal
Vcc=+5V
Gain=+10
Load=100
Ω
Gain (dB)
19.6
19.4
1M10M100M1G
Frequency (Hz)
1.50
1.25
1.00
0.75
0.50
Output Response (V)
0.25
0.00
-2ns-1ns0s1ns2ns
Gain=+2
Vcc=+5V
Load=100
Ω
Frequency (Hz)
Ω
Time (ns)
6/20 Doc ID 15604 Rev 3
RHF350Electrical characteristics
Gain=37dB
Rg=10ohms
Rfb=750ohms
non-inverting input in short-circuit
Vcc=5V
Figure 7.I
300
250
200
150
Isink (mA)
100
50
0
-2.0-1.5-1.0-0.50.0
sink
V (V)
Figure 8.I
source
0
-50
-100
-150
Isource (mA)
-200
-250
-300
0.00.51.01.52.0
V (V)
Figure 9.Input current noise vs. frequencyFigure 10. Input voltage noise vs. frequency
Gain=+8.5
Rg=100ohms
Rfb=750ohms
non-inverting input in short-circuit
Vcc=5V
Neg. Current
Noise
Pos. Current
Noise
Figure 11. Quiescent current vs. V
5
4
3
2
1
0
-1
Icc (mA)
-2
-3
-4
-5
0.00.51.01.52.02.5
Vcc (V)
CC
Icc(+)
Gain=+2
Vcc=5V
Input to ground, no load
Icc(-)
Figure 12. Noise
Vcc=5V
Doc ID 15604 Rev 37/20
Electrical characteristicsRHF350
-40-20020406080100120
50
55
60
65
70
75
80
85
90
Vcc=5V
Load=100
Ω
SVR (dB)
Temperature (°C)
-40-20020406080100120
200
220
240
260
280
300
320
340
Open Loop
Vcc=5V
R
OL
(M )
Temperature (°C)
Figure 13. Distortion vs. output amplitudeFigure 14. Output amplitude vs. load
4.0
HD2
HD3
Gain=+2
Vcc=+5V
F=10MHz
Load=100
Ω
3.5
3.0
2.5
Max. Output Amplitude (Vp-p)
2.0
101001k10k100k
Load (ohms)
Figure 15. Reverse isolation vs. frequencyFigure 16. SVR vs. temperature
0
-20
-40
Gain=+2
Vcc=5V
Load=100
Ω
-60
Isolation (dB)
-80
Small Signal
Vcc=5V
Ω
Load=100
-100
1M10M100M1G
Figure 17. I
1000
800
600
400
200
-200
Iout (mA)
-400
-600
-800
-1000
8/20 Doc ID 15604 Rev 3
vs. temperatureFigure 18. ROL vs. temperature
out
Isource
0
Isink
Output: short-circuit
Vcc=5V
-40-20020406080100120
Frequency (Hz)
Temperature (°C)
RHF350Electrical characteristics
-40-200 20406080
-5
-4
-3
-2
-1
0
1
2
Gain=+2
Vcc=5V
Load=100
Ω
VOL
VOH
V
OH & OL
(V)
Temperature (°C)
Figure 19. CMR vs. temperatureFigure 20. I
CMR (dB)
70
68
66
64
62
60
58
56
54
Vcc=5V
52
50
Ω
Load=100
-40-20020406080100120
Temperature (°C)
vs. temperature
bias
14
12
10
8
6
( A)
4
BIAS
I
2
0
-2
-4
Ib(+)
Ib(−)
Gain=+2
Vcc=5V
Ω
Load=100
-40-20020406080100120
Temperature (°C)
Figure 21. Vio vs. temperatureFigure 22. VOH and VOL vs. temperature
1000
800
600
(micro V)
IO
400
V
200
Open Loop
Vcc=5V
Ω
Load=100
0
-40-20020406080100120
Temperature ( C)
Figure 23. I
6
4
2
0
-2
(mA)
CC
I
-4
-6
Gain=+2
Vcc=5V
-8
no Load
In+/In- to GND
-10
vs. temperature
CC
Icc(+)
Icc(-)
-40-20020406080100120
Temperature ( C)
Doc ID 15604 Rev 39/20
Power supply considerationsRHF350
3 Power supply considerations
Correct power supply bypassing is very important to optimize performance in highfrequency ranges. The bypass capacitors should be placed as close as possible to the IC
pins to improve high-frequency bypassing. A capacitor greater than 1
minimize the distortion. For better quality bypassing, a 10 nF capacitor can be added. It
should also be placed as close as possible to the IC pins. The bypass capacitors must be
incorporated for both the negative and positive supply.
Figure 24. Circuit for power supply bypassing
+V
CC
10 µF
+
10 nF
+
μF is necessary to
3.1 Single power supply
In the event that a single supply system is used, biasing is necessary to obtain a positive
output dynamic range between the 0 V and +V
and VOL, the amplifier provides an output swing from +0.9 V to +4.1 V on a 100 Ω load.
V
OH
The amplifier must be biased with a mid-supply (nominally +V
DC component of the signal at this value. Several options are possible to provide this bias
supply, such as a virtual ground using an operational amplifier or a two-resistance divider
(which is the cheapest solution). A high resistance value is required to limit the current
consumption. On the other hand, the current must be high enough to bias the non-inverting
input of the amplifier. If we consider this bias current (35
through the resistance divider, to keep a stable mid-supply two resistances of 750
used.
-
-V
10 nF
10 µF
+
CC
AM00835
supply rails. Considering the values of
CC
/2), in order to maintain the
CC
μA maximum) as 1% of the current
Ω can be
The input provides a high-pass filter with a break frequency below 10 Hz which is necessary
to remove the original 0 V DC component of the input signal, and to set it at +V
Figure 25 on page 11 illustrates a 5 V single power supply configuration. A capacitor C
added to the gain network to ensure a unity gain at low frequencies in order to keep the right
DC component at the output. C
contributes to a high-pass filter with Rfb//RG and its value is
G
calculated with regard to the cut-off frequency of this low-pass filter.
10/20 Doc ID 15604 Rev 3
CC
/2.
is
G
RHF350Power supply considerations
Figure 25. Circuit for +5 V single supply
+5 V
10 µF
IN
+5 V
R1
750 Ω
R2
750 Ω
R
1 kΩ
+ 1 µF
in
10 nF
+
+
_
R
fb
R
G
C
G
100 µ F
OUT
100 Ω
AM00844
Doc ID 15604 Rev 311/20
Noise measurementsRHF350
4 Noise measurements
The noise model is shown in Figure 26.
●eN: input voltage noise of the amplifier.
●iNn: negative input current noise of the amplifier.
●iNp: positive input current noise of the amplifier.
Figure 26. Noise model
+
R3
N3
+
iN
_
eN
-
iN
Output
HP3577
Input noise:
8 nV/√Hz
R2
R1
N2
N1
AM00837
The thermal noise of a resistance R is:
4kTRΔF
ΔF is the specified bandwidth.
where
On a 1 Hz bandwidth the thermal noise is reduced to:
4kTR
where k is the Boltzmann's constant, equal to 1,374.E(-23)J/°K. T is the temperature (°K).
The output noise eNo is calculated using the superposition theorem. However, eNo is not
the simple sum of all noise sources, but rather the square root of the sum of the square of
each noise source, as shown in
Equation 1.
Equation 1
eNoV12V22V32V42V52V6
+++++=
2
12/20 Doc ID 15604 Rev 3
RHF350Noise measurements
Equation 2
eNo2eN2g2iNn2R22iNp
+×+×R32×g2×
2
2
R2
------- -
4kTR1 4kTR2 1
R1
The input noise of the instrumentation must be extracted from the measured noise value.
The real output noise value of the driver is:
Equation 3
2
instrumentation()
eNoMeasured()
–=
2
The input noise is called equivalent input noise because it is not directly measured but is
evaluated from the measurement of the output divided by the closed loop gain (eNo/g).
After simplification of the fourth and the fifth term of
Equation 2 we obtain:
Equation 4
eNo2eN2g2iNn2R22iNp
2
+×+×R32×g2×g4kTR21
4.1 Measurement of the input voltage noise eN
If we assume a short-circuit on the non-inverting input (R3=0), from Equation 4 we can
derive:
R2
------- -+
R1
2
R2
------- -+
4kTR3×++×+=
R1
2
4kTR3×+×+=
Equation 5
eNoeN
2g2
iNn2R22g4kTR2×+×+×=
In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as
possible. On the other hand, the gain must be large enough.
R3=0, gain: g=100
4.2 Measurement of the negative input current noise iNn
To measure the negative input current noise iNn, we set R3=0 and use Equation 5. This
time, the gain must be lower in order to decrease the thermal noise contribution.
R3=0, gain: g=10
4.3 Measurement of the positive input current noise iNp
To extract iNp from Equation 3, a resistance R3 is connected to the non-inverting input. The
value of R3 must be chosen in order to keep its thermal noise contribution as low as
possible against the iNp contribution.
R3=100 W, gain: g=10
Doc ID 15604 Rev 313/20
Intermodulation distortion productRHF350
5 Intermodulation distortion product
The non-ideal output of the amplifier can be described by the following series of equations.
2
in
… C+nV
Where the input is V
V
=Asinωt, C0 is the DC component, C1(Vin) is the fundamental and C
in
C0C1VinC2V
out
++ +=
is the amplitude of the harmonics of the output signal V
out
n
in
n
.
A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input
signal contributes to harmonic distortion and to the intermodulation product.
The study of the intermodulation and distortion for a two-tone input signal is the first step in
characterizing the driving capability of multi-tone input signals.
In this case:
VinAω1tsinAω2tsin+=
then:
C0C1Aω1tsinAω2tsin+()C2Aω1tsinAω2tsin+()
V
out
+++=
2
… CnAω1tsinAω2tsin+()
n
From this expression, we can extract the distortion terms, and the intermodulation terms
from a single sine wave.
●Second-order intermodulation terms IM2 by the frequencies (ω
an amplitude of C2A
●Third-order intermodulation terms IM3 by the frequencies (2ω
ω
+2ω2) and (ω
1
2
.
+2ω
) with an amplitude of (3/4)C3A3.
1
2
1-ω2
1-ω2
) and (ω
), (2ω
1+ω2
1+ω2
), (−
) with
The intermodulation product of the driver is measured by using the driver as a mixer in a
summing amplifier configuration (
Figure 27). In this way, the non-linearity problem of an
external mixing device is avoided.
Figure 27. Inverting summing amplifier
V
V
in1
in1
V
V
in2
in2
14/20 Doc ID 15604 Rev 3
R2
R2
R1
R1
R
R
fb
fb
_
_
V
V
out
out
+
+
R
R
100
100
RHF350Inverting amplifier biasing
6 Inverting amplifier biasing
A resistance is necessary to achieve good input biasing, such as resistance R shown in
Figure 28.
The value of this resistance is calculated from the negative and positive input bias current.
The aim is to compensate for the offset bias current, which can affect the input offset voltage
and the output DC component. Assuming I
R is:
R
Figure 28. Compensation of the input bias current
R
-
I
ib
in
_
, I
ib-
R
×
inRfb
-----------------------=
R
in
R
, Rin, Rfb and a 0 V output, the resistance
ib+
R+
fb
fb
VCC+
Output
+
+
I
ib
-
V
CC
Load
R
AM00839
Doc ID 15604 Rev 315/20
Active filteringRHF350
7 Active filtering
Figure 29. Low-pass active filtering, Sallen-Key
C1
1
R
2
R
+
IN
C2
_
R
R
G
fb
OUT
100 Ω
AM00840
From the resistors Rfb and RG we can directly calculate the gain of the filter in a classic noninverting amplification configuration.
R
AVg1
fb
--------+==
R
g
We assume the following expression is the response of the system.
Vout
jω
----------------- -
T
jω
Vin
jω
-------------------------------------------==
12ζ
------
ω
jω
g
c
jω()
------------ -++
2
ω
c
2
The cut-off frequency is not gain-dependent and so becomes:
The damping factor is calculated by the following expression.
1
-- -
ζ
ωcC1R1C1R2C2R1C1R1g–++()=
2
The higher the gain, the more sensitive the damping factor is. When the gain is higher than
1, it is preferable to use very stable resistor and capacitor values. In the case of R1=R2=R:
Due to a limited selection of capacitor values in comparison with resistor values, we can set
16/20 Doc ID 15604 Rev 3
C1=C2=C, so that:
1
------------------------------------ -=
ω
c
R1R2C1C2
R
fb
–
2C1
2C1C
–
2R1
2R
1R2
--------
R
2
R
--------
R
g
fb
g
2C
ζ
-------------------------------- -=
2R
ζ
-------------------------------- -=
RHF350Package information
8 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
ECOPACK
specifications, grade definitions and product status are available at:
ECOPACK
packages, depending on their level of environmental compliance. ECOPACK®
Note:The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the
package. Connecting unused pins or metal lid to ground or to the power supply will not affect
the electrical characteristics.
Table 6.Ceramic Flat-8 package mechanical data
Dimensions
Ref.
Min.Typ.Max.Min.Typ.Max.
A2.242.442.640.0880.0960.104
b0.380.430.480.0150.0170.019
c0.100.130.160.0040.0050.006
D6.356.486.610.2500.2550.260
E6.356.486.610.2500.2550.260
E24.324.454.580.1700.1750.180
E30.881.011.140.0350.0400.045
e1.270.050
L3.000.118
Q0.660.790.920.0260.0310.092
MillimetersInches
S10.921.121.320.0360.0440.052
N0808
18/20 Doc ID 15604 Rev 3
RHF350Revision history
9 Revision history
Table 7.Document revision history
DateRevisionChanges
20-May-20091Initial release.
Added Mass in Features on cover page.
12-Jul-20102
Added Table 1: Device summary on cover page, with full
ordering information.
Changed temperature limits in Ta b le 4 .
27-Jul-20113
Added Note: on page 18 and in the "Pin connections" diagram
on the coverpage.
Doc ID 15604 Rev 319/20
RHF350
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