The PM6641 is a monolithic voltage regulator
module specifically designed to supply DDR2/3
memory and chipset in ultra-mobile PC and real
estate constrained portable systems.
It integrates three independent, adjustable,
constant frequency buck converters, a ±2 Apk low
drop-out (LDO) linear regulator and a
±15 mA low noise buffered reference.
Each regulator provides basic UV and OV
protections, programmable soft-start and current
limit and active soft-end.
Applications
Pulse-skipping technique is performed to increase
efficiency at very light load.
1. Free air operating conditions unless otherwise specified. Stresses beyond those listed under “absolute
maximum ratings” may cause permanent damage to the device. Exposure to absolute maximum rated
conditions for extended periods may affect device reliability.
Power dissipation @ TA = 25 °C4W
V
3.2 Thermal data
Table 4.Thermal data
SymbolParameterValueUnit
R
thJA
T
STG
T
A
T
J
Thermal resistance junction to ambient 25°C/W
Storage temperature range-50 to 150°C
Operating ambient temperature range-40 to 85°C
Junction operating temperature range-40 to 125°C
8/47 Doc ID 13510 Rev 3
PM6641Electrical data
3.3 Recommended operating conditions
Table 5.Recommended operating conditions
Val ues
SymbolParameter
MinTypMax
Unit
V
AVC C
VCC
V
IN
AVCC voltage range4.55.5
VCC IC supply voltage 4.5V
VIN_x input voltage range2.7V
AVC C
VCC
VV
Doc ID 13510 Rev 39/47
Electrical characteristicsPM6641
4 Electrical characteristics
TA = 0 °C to 85 °C, AVCC = 5 V, VCC = 5 V, VIN_x = 3.3 V and LDOIN connected to 1.8 V
output if not otherwise specified
Table 6.Electrical characteristics
SymbolParameterTest condition
Supply section all rails
I
CC
I
SHDN
UVLO
Error amplifier, FB
V
REF
I
FB
I
SS
Oscillator frequency
AVCC+VCC operating current
Total shutdown current into
VIN_x + AVCC + VCC pins
AVCC under voltage lockout
upper threshold
AVCC under voltage lockout
th
lower threshold
UVLO hysteresis100mV
AND SS – all rails
Error amplifier reference voltage V
FB input bias currentVFB_X = 0.8 V25nA
Soft-start current VSS_X = 0.4 V10μA
(a)
.
= +5 V, all switching
V
VCC
regulators active without load
= V
V
IN
AVC C
= V
VCC
all EN_x low
AVC C
= V
= 5 V792800808mV
VCC
= +5 V,
Val ues
Unit
MinTypMax
3mA
10μA
4.04.14.35
V
3.63.94.0
R
SETSWF
f
SW
Switching frequency
R
SETSWF
Comp all rails
g
m
COMP_x transconductance300µS
UVP/OVP protections and PGOOD signal (SMPS only) all rails
OVP
UVP
Overvoltage threshold116120124
th
Undervoltage threshold566064
th
Power good upper threshold106110115
PG
th
Power Good lower threshold869094
I
PG,LEAK
V
PG,LOW
PG_x outputs leakeage currentPG_x tied to +5 V1µA
PG_x outputs low levelV
a. All parameters at operating temperature extremes are guaranteed by design and statistical analysis
(not production tested).
FB_X
10/47 Doc ID 13510 Rev 3
= 140 kΩ500
= 70 kΩ1000
= 0.6 V or 1V, I
= 2 mA250mV
PG_X
kHzSET_SWF to VCC675750825
%
PM6641Electrical characteristics
Table 6.Electrical characteristics (continued)
Val ues
SymbolParameterTest condition
MinTypMax
Thermal shutdown
Unit
T
SHDN
Thermal shutdown hysteresis15
Switching node – chipset 1.5 V rail
Thermal shutdown threshold150
t
Onmin
Minimum on-time200ns
RDSon,HSHigh side PMOS Ron150220
RDSon,LSLow side NMOS Ron100160
=
V
IN
I
INLEAK
VIN_1S5 leakage current
V
EN_1S5 low
Peak current limitR
Soft-end section – chipset 1.5 V rail
Discharge resistance25Ω
LS turn-on VFB_1SX threshold
with internal divider
LS turn-on VFB_1SX threshold
with external divider
VFB_S1X to OUT_X0.29
VFB_S1X to external divider0.16
Power management section – chipset 1.5 V rail
AVC C
CSNS
= V
= +5 V,all
VCC
= 50 kΩ3.9A
+5 V
=
V
IN
+3.3 V
°C
mΩ
1μA
V
EN_1S5 turn-off level
EN_1S5 turn-on level2
Switching node – chipset 1.05 V rail
t
Onmin
Minimum on-time180ns
RDSon,HSHigh side PMOS Ron100160
RDSon,LSLow side NMOS Ron70110
I
INLEAK
Soft end section – chipset 1.05 V rail
VIN_1S05 leakage current
Peak current limitR
Discharge resistance 25Ω
V
= 5 V
AVC C
mΩ
0.8
=
V
IN
= V
V
AVC C
VCC
EN_1S05 low
= +5 V, all
+5 V
V
IN
=
+3.3 V
= 50 kΩ5.1A
CSNS
1
1
Doc ID 13510 Rev 311/47
V
μA
Electrical characteristicsPM6641
Table 6.Electrical characteristics (continued)
Val ues
SymbolParameterTest condition
MinTypMax
Unit
LS turn-on VFB_1SX threshold
with internal divider
LS turn-on VFB_1SX threshold
with external divider
VFB_S1X to OUT_X0.2
VFB_S1X to external divider0.16
Power management section – chipset 1.05 V rail
EN_1S05 turn-off level
= +5 V
V
EN_1S05 turn-on level2
AVC C
0.8
Switching node – DDR2/3 rails
t
Onmin
Minimum on-time200ns
RDSon,HSHigh side PMOS Ron90130
RDSon,LSLow side NMOS Ron80120
VIN =
I
INLEAK
VIN_1S8 leakage current
Peak current limitR
Soft-end section – DDR2/3 rails
VDDQ discharge resistance in
non-tracking discharge mode
VTTREF discharge resistance
in non-tracking discharge mode
V
AVC C
= V
VCC
= 5 V,
all EN_1S8 low
= 50 kΩ6.1A
CSNS
+5 V
V
IN
+3.3 V
=
25Ω
200Ω
V
V
mΩ
1
μA
1
VTTFB discharge resistance in
non-tracking discharge mode
V
tracking/Non-tracking discharge
threshold for final
FB_1SX
VFB_S1X to OUT_X0.340V
transition with internal divider
V
tracking/Non-tracking discharge
threshold for final
FB_1SX
VFB_S1X to external divider0.160V
transition with external divider
Power management section – DDR2/3 rails
DSCG turn-off level
V
DSCG turn-on level3.5
AVC C
EN_1S8 (S5), EN_VTT (S3)
Turn-Off Level
EN_1S8 (S5), EN_VTT (S3)
V
AVC C
Turn-On Level
12/47 Doc ID 13510 Rev 3
= +5 V
= +5 V
0.8
40Ω
1.5
V
2
PM6641Electrical characteristics
Table 6.Electrical characteristics (continued)
Val ues
SymbolParameterTest condition
MinTypMax
VTT LDO section – DDR2/3 rails
Unit
PG_VTT_TH
Power Good lower threshold869094%
Power Good upper threshold106110114%
I
LDOIN,ON
LDOIN,STR
I
LDOIN,STD
I
VTTFB, BIAS
VTTFB, LEAK
I
VTT,LEAK
LDO input bias current in fullON state
LDO input bias current in
suspend-to-RAM state
LDO input bias current in
suspend-to-disk state
VTTFB bias current
VTTFB leakage current
VTT leakage current
LDO linear regulator output
voltage (DDR2)
LDO linear regulator output
voltage (DDR3)
V
VTT
LDO output accuracy respect to
VTTREF, V
LDOIN
LDO source current limit
I
VTT,CL
LDO sink current limit
VTTREF section – DDR2/3 rails
=1.8 V
EN_1S8 = EN_VTT = +5 V,
no load on VTT
EN_1S8 = +5 V, EN_VTT = 0 V,
no load on VTT
EN_1S8 = EN_VTT = 0 V,
no load on VTT
EN_1S8 = EN_VTT = +5 V,
V
VTTFB
= V
VOUT_1S8
/2
EN_1S8 = +5 V, EN_VTT = 0 V,
V
VTTFB
= V
VOUT_1S8
/2
EN_1S8 = +5 V, EN_VTT = 0 V,
V
VTT
= V
VOUT _1S8
/2
EN_1S8 = EN_VTT = +5 V,
I
VTT
0 A, V
LDOIN
= 1.8 V
EN_1S8 = EN_VTT = +5 V,
I
VTT
= 0 A, V
LDOIN
= 1.5 V
EN_1S8 = EN_VTT = +5 V,
-1 mA < I
VTT
< 1 mA
EN_1S8 = EN_VTT = +5 V,
-1 A < I
VTT
< 1 A
EN_1S8 = EN_VTT = +5 V,
-2 A < I
V
VTT
V
VTT
V
VTT
V
VTT
< 2 A
VTT
< 1.10*(V
> 1.10*(V
> 0.90*(V
< 0.90*(V
VOUT _1S8
VOUT _1S8
VOUT _1S8
VOUT _1S8
/2)22.33
/2)11.251.5
/2)-3-2.3-2
/2)-1.5-1.25-1
110
10
3
1
1
-1010
0.9
0.75
-2020
-2525
-3535
μAI
μAI
V
mV
A
VTTREF output voltageI
V
VTTREF
I
VTTREF
VTTREF output voltage
accuracy relative to
V
VOUT _1S8
/2
VTTREF short circuit source
current
VTTREF short circuit sink
current
-15 mA < I
V
V
V
VTTREF
VOUT _1S8
VOUT _1S8
VOUT _1S8
= 0A, V
VTTREF
= 1.8 V
= 1.8 V, V
= 1.8 V, V
VOUT _1S8
< +15 mA,
VTTREF
VTTREF
= 1.8 V0.9V
-22%
= 0 V40
mA
= 1.8 V-40
Doc ID 13510 Rev 313/47
Typical operating characteristicsPM6641
5 Typical operating characteristics
Figure 3.VDDQ and VTT soft-start
Figure 5.1V5 soft-start without loadFigure 6.1V5 soft-start with load
without load
Figure 4.VDDQ and VTT soft-start with AVG
load
Figure 7.1V05 soft-start without loadFigure 8.1V05 soft-start without load
14/47 Doc ID 13510 Rev 3
PM6641Typical operating characteristics
Figure 9.VDDQ output ripple and phase @
AVG current
Figure 10. VTT, VTTREF output ripple @ AVG
current
Figure 11. 1V5 output ripple and phase @
AVG current
Figure 13. SW reg. efficiency @ VIN = 3.3 V,
F
= 600 kHz
1V8
1V8
1V5
1V5
1V05
1V05
SW
Load Current [A]
Load Current [A]
95
95
90
90
85
85
80
80
Efficiency %
Efficiency %
75
75
70
70
65
65
1,0E-031,0E-021,0E-011,0E+001,0E+01
1,0E-031,0E-021,0E-011,0E+001,0E+01
Figure 12. 1V05 output ripple and phase @
AVG current
Figure 14. VDDQ (1.8 V) load regulation
1,808
1,806
1,804
1,802
1,800
1,798
1,796
1,794
Output voltage (V)
1,792
1,790
1,788
0,000,501,001,502,002,503,003,504,00
Load Current [A]
1V8
Doc ID 13510 Rev 315/47
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