®
Application Specific Discretes
ASD™
MAIN PRODUCT CHARACTERISTICS
PKC-136
PEAK CLAMP
V
V
DRM
BR
160Vdc
700Vdc
P 1.5W
FEATURES
Protection of the Mosfet in flyback power supply
■
TRANSIL™ and blocking diode in a single
■
package
BENEFITS
Accurate voltage clamping regardless load
■
■ Reduced current loop
■ Reduced EMI emission
■ High integration
■
Fast assembly
■
Reduced losses in stand by mode
BASIC CONNECTION
Lf
DO-15
Io
T
D
Vo
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
T
stg
Storage temperature
T
j
Junction temperature
P
August 2001 - Ed: 2A
Maximum power dissipation T°lead = 90°C
- 40 to + 150 °C
150 °C
1.5 W
1/5
PKC-136
ELECTRICAL CHARACTERISTICS TRANSIL
Symbol Parameter Test conditions
Unit
Min. Typ. Max.
Value
I
RM
V
BR
Leakage current VR= 136V
Breakdown voltage IR= 1mA
Tj= 25°C 1 µA
=125°C 10
T
j
Tj= 25°C 150 160 170 V
pulse test < 50ms
R
d
Dynamical Resistance tp < 500ns
Tj= 125°C 4 Ω
between I = 0.5Amps
and I = 1.5Amps
-4
αT
Temperature
10.8 10
/°C
Coefficient
V
sCL
Surge Clamping
voltage
Ipp = 2.7Amps
10/1000µs
219 V
CALCULATION OF THE CLAMPING VOLTAGE:
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown
voltage V
of the transil versus the operating junction temperature and use the equation (3) to calculate
BR
the clamping voltage versus the transil current Ipp and the temperature.
VTTVC
=− °α()()25 25
∆
BR j BR
VT V C V
() ( )=°+25 ∆
BR j BR BR
(1)
(2)
V T V T Rd Ipp
() () .=+
CL j BR j
(3)
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)
Value
Symbol Parameter Tests conditions
Min. Typ. Max.
I
R
V
RRM
Reverse leakage current VR=V
Repetitive Peak Reverse
Tj= 25°C
RRM
Tj= 25°C
= 125°C
T
j
320
700 V
3 µA
Voltage
trr
Reverse Recovery Time I
=1A dIF/ dt = -50A/µs
F
45 ns
VR= 30V
V
FP
Peak Forward Voltage IF=3A
dIF/ dt = 100A/µs
Tj= 25°C
= 125°C
T
j
12 V
18
CAPACITANCE
Symbol Parameter Typical Value Unit
C
Total Parasitic capacitance 1MHz 30mV
35 pF
Unit
2/5
PKC-136
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-l)
th(j-a)
Junction to leads L = 10mm
Junction to ambiant condition see note 1
Note 1: Device mounted on a epoxy FR4 board of 35µm thickness
Lead Length: 10mm
Pad diameter: 4mm
Track width: 1mm
Track length: 25mm
The Rth
S(Cu) = 1.5cm
S(Cu) = 3.5cm
Fig.1:Peakpulse power versusexponentialpulse
duration.
1.E+02
1.E+01
1.E+00
1.E-01
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
can be reduced by replacing the Cu track by plan:
(j-a)
2
Pp(kW)
/lead R
2
/lead R
th(j-a)
th(j-a)
tp(ms)
= 65°C/W
= 60°C/W
Tj initial=25°C
Fig. 2: Relative variation of peak pulse power
versus initial junction temperature.
%
110
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
40 °C/W
105 °C/W
Tj(°C)
Fig. 3: Average power dissipation versus ambient
temperature.
P(W)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150
Tamb=Tleads
Printed circuit board
Tamb(°C)
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board epoxy FR4)
Zth(j-a) (°C/W)
1000.0
Free air
100.0
10.0
tp(s)
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
3/5
PKC-136
Fig. 5: Thermal resistance junction to ambient
versus copper surface under each lead.
Rth(j-a)
110
100
90
80
70
60
50
40
30
20
10
0
012345678910
S(cm²)
Lleads=10mm
Fig. 6-2: Reverse leakage current versus reverse
voltage applied (typical values, for diode).
IR(µA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0 50 100 150 200 250 300 350 400 450 500 550 600 650 700
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
VR(V)
Fig. 6-1: Reverse leakage current versus reverse
voltage applied (typical values, for Transil).
IR(µA)
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
VR(V)
1.E-06
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Fig. 7: Transient peak forward voltage versus
/dt (90% confidence).
d
IF
V (V)
FP
50
IF=3A
Tj=125°C
45
40
35
30
25
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Fig. 8: Clamping voltage versus peak pulse
current (maximum values).
Ipp(A)
10.0
tp<500ns
Tj=25°C
1.0
Vcl(V)
0.1
160 165 170 175 180 185 190 195 200 205 210 215 220
4/5
Tj=125°C
Fig. 9: Junction capacitance versus reverse
voltage applied on clamping characteristic (typical
values).
C(pF)
100
VR(V)
10
1 10 100 1000
F=1MHz
Vosc=30mV
Tj=25°C
RMS
PACKAGE MECHANICAL DATA
DO-15
PKC-136
REF. DIMENSIONS
A
CC
Millimeters Inches
Min. Max. Min. Max.
A 6.05 6.75 0.238 0.266
B 2.95 3.53 0.116 0.139
D
B
C 26 31 1.024 1.220
D 0.71 0.88 0.028 0.035
Ordering type Marking Package Weight Baseqty
PKC136 Partnumber
DO-15 0.4g 1000 Ammopack
Diode cathode ring
PKC136-RL Partnumber
DO-15 0.4g 6000 Tape and reel
Diode cathode ring
Delivery
mode
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