ST PKC-136 User Manual
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PKC-136 |
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Application Specific Discretes
ASD™
PEAK CLAMP
MAIN PRODUCT CHARACTERISTICS
VBR |
160Vdc |
VDRM |
700Vdc |
P |
1.5W |
FEATURES
■Protection of the Mosfet in flyback power supply
■TRANSIL™ and blocking diode in a single package
BENEFITS
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Accurate voltage clamping regardless load |
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Reduced current loop |
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Reduced EMI emission |
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High integration |
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Fast assembly |
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Reduced losses in stand by mode |
DO-15 |
BASIC CONNECTION |
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Lf |
Io |
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T |
Vo |
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D |
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ABSOLUTE MAXIMUM RATINGS (limiting values)
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Value |
Unit |
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Tstg |
Storage temperature |
- 40 to + 150 |
°C |
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Tj |
Junction temperature |
150 |
°C |
P |
Maximum power dissipation T°lead = 90°C |
1.5 |
W |
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August 2001 - Ed: 2A |
1/5 |
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PKC-136
ELECTRICAL CHARACTERISTICS TRANSIL
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Parameter |
Test conditions |
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Min. |
Typ. |
Max. |
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IRM |
Leakage current |
VR = 136V |
Tj = 25°C |
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1 |
µA |
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Tj =125°C |
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10 |
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VBR |
Breakdown voltage |
IR = 1mA |
Tj = 25°C |
150 |
160 |
170 |
V |
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pulse test < 50ms |
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Rd |
Dynamical Resistance |
tp < 500ns |
Tj = 125°C |
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4 |
Ω |
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between I = 0.5Amps |
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and I = 1.5Amps |
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αT |
Temperature |
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10.8 |
10-4/°C |
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Coefficient |
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VsCL |
Surge Clamping |
Ipp = 2.7Amps |
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219 |
V |
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voltage |
10/1000µs |
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CALCULATION OF THE CLAMPING VOLTAGE:
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate the clamping voltage versus the transil current Ipp and the temperature.
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VBR = αT (Tj − 25)VBR ( 25°C ) |
(1) |
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VBR (Tj ) = VBR ( 25°C ) + VBR |
(2) |
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VCL(Tj ) = VBR (Tj ) + Rd .Ipp |
(3) |
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ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified) |
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Symbol |
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Tests conditions |
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Value |
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Unit |
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Min. |
Typ. |
Max. |
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IR |
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Reverse leakage current |
VR = VRRM |
Tj = 25°C |
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3 |
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μA |
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Tj = 125°C |
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3 |
20 |
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VRRM |
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Repetitive Peak Reverse |
Tj = 25°C |
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700 |
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V |
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Voltage |
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trr |
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Reverse Recovery Time |
IF = 1A dIF / dt = -50A/µs |
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45 |
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ns |
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VR = 30V |
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VFP |
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Peak Forward Voltage |
IF = 3A |
Tj = 25°C |
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12 |
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V |
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dIF / dt = 100A/µs |
Tj = 125°C |
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18 |
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CAPACITANCE |
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Symbol |
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Parameter |
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Typical Value |
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Unit |
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C |
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Total Parasitic capacitance 1MHz 30mV |
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35 |
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pF |
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2/5 |
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