ST PD55015, PD55015S User Manual

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PD55015 - PD55015S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 15 W with 13.5 dB gain @ 500 MHz /

12.5V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD55015 is acommon source N-Channel, en­hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55015 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech­nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55015’s su­perior linearity performance makes it an ideal so­lution for car mobile radio.

The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.

The

LdmoST

Plastic FAMILY

PowerSO-10RF

(Formed Lead)

ORDER CODE BRANDING

PD55015

PowerSO-10RF

(Straight Lead)

ORDER CODE BRANDING

PD55015S XPD55015S

PRELIMINARY DATA

XPD55015

ABSOLUTE MAXIMUM RATINGS(T

Symbol Parameter Value Unit

V

(BR)DSS

V

I

P

DISS

T

T

STG

GS

D

Drain Source Voltage 40 V
Gate-Source Voltage ±20 V
Drain Current 5 A

Power Dissipation (@ Tc= 700C)
Max. Operating Junction Temperature 165 0

j

Storage Temperature -65 to 165 0

CASE

=25OC)

73 W

THERMAL DATA

R

th(j-c)

May 2000

Junction-Case Thermal Resistance 1.3

0

C/W

C
C

1/10

PD55015 - PD55015S

ELECTRICAL SPECIFICATION(T

CASE

=250C)

STATIC

Symbol Parameter Min. Typ. Max. Unit

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

g

C

C

OSS

C

RSS

FS

ISS

VGS=0V VDS=28V
VGS=20V VDS=0V
VDS=10V ID= 150 mA
VGS=10V ID= 2.5 A

2.0 5.0 V

1 µA
1 µA

0.8 V
VDS=10V ID= 2.5 A 2.0 2.5 mho
VGS=0V VDS= 12.5 V f = 1 MHz

89 pF
VGS=0V VDS= 12.5 V f = 1 MHz 60 pF
VGS=0V VDS= 12.5 V f = 1 MHz

6.5 pF

DYNAMIC

Symbol Parameter Min. Typ. Max. Unit

P

OUT

G

PS

η

D

LOAD

Mismatch

f = 500 MHz VDD= 12.5 V IDQ=150mA
f = 500 MHz VDD= 12.5 V P
f = 500 MHz VDD= 12.5 V P
f = 500 MHz V

= 15.5 V P

DD

=15W IDQ=150mA

OUT

=15W IDQ=150mA

OUT

=15W IDQ=150mA

OUT

ALL PHASE ANGLES

15 W

13.5 dB
50

20:1 VSWR

%

SC15200

PD55015

Frequency

MHz

480 2.13 - j1.09 1.55 + j.34
500 1.95 - j.31 1.63 - j.25
520 1.83 - j.70 1.43 + j.30

2/10

PIN CONNECTION

Zin

Ω

SOURCE

DRAINGATE

IMPEDANCE DATA

PD55015S

Zdl

Ω

D

Z

DL

G

Zin

SC13140

Frequency

MHz

Typical Input

Impedance

S

Zin

Ω

Typical Drain

Load Impedance

480 1.43 - j1.27 1.47 + j.65
500 1.62 - j1.05 1.49 + j.58
520 1.57 - j.91 1.35 +j.36

Zdl

Ω

TYPICAL PERFORMANCE

Capacitance vs. Drain Voltage

PD55015 - PD55015S

Drain Current vs. Gate Voltage

1000

100

Cis s

Coss

10

C, CAPACITANCE (pF)

Crss

f=1MHz

1

0 5 10 15 20 25

VDS, DRAIN-SOURCE VOLTAGE (V)

Gate-Source Volatge vs. Case Temperature

1.04

1.02

I

D

=3A

4

3.5

3

2.5

2

1.5

Id, DRAIN CURRENT (A)

1

0.5

0

2.5 3 3.5 4 4.5 5

Vgs, GATE-SOURCE VOLTAGE (V)

VDS=10V

1

0.98

V

DS=10V

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

0.96

-25 0 25 50 75

ID= .25A

Tc, CASE TEMPERATURE (°C)

I

D=2A

I

D

I

D=1A

=1.5A

3/10

PD55015 - PD55015S

TYPICAL PERFORMANCE

Output Power vs. Input Power

PD55015

Power Gain vs. Output Power

18

16

14

12

10

8

6

4

Pout, OUTPUT POWER (W)

2

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

480MH z

500MH z

Pin, INPUT POWER (W)

Drain Efficiency vs. Output Power

70

60

50

40

30

20

Nd, DRAIN EFFICIENCY (%)

10

0

0 2 4 6 8 10 12 14 16 18

Pout, OUTPUT POWER (W)

520MHz

520MH z

VDD=12.5V
I

DQ=150mA

480MHz

VDD=12.5V

DQ

I

=150mA

500MHz

18

16

480MH z

14

12

500MHz

520MHz

Gp, POWER GAIN (dB)

10

VDD=12.5V

DQ

I

8

0 2 4 6 8 10 12 14 16 18

Pout, OUTPUT POWER (W)

Return Loss vs. Output Power

0

-10

-20

-30

Rtl, RETURN LOSS (dB)

-40

480MH z

500MH z

VDD=12.5V
I

024681012141618

Pout, OUTPUT POWER (W)

=150mA

520MH z

DQ =150mA

Output Power vs. Bias Current

20

480MHz

18

16

14

12

Pout, OUTPUT POWER (W)

10

8

0 200 400 600 800 1000

Idq, BIAS CURRENT (mA)

4/10

500MHz

520MHz

VDD=12.5V
Pin=0. 8W

Drain Efficiency vs. Bias Current

70

60

50

40

Nd, DRAIN EFFICIENCY (%)

30

0 200 400 600 800 1000

480MH z

Idq, BIAS CURRENT (mA)

500MHz

VDD=12.5V
Pin=0.8W

520MHz

TYPICAL PERFORMANCE

Output Power vs. Drain Voltage

PD55015 - PD55015S

Drain Efficency vs. Drain Voltage

25

500MH z

20

480MH z

15

10

Pout, OUTPUT POWER (W)

5

0

7 8 9 1011121314151617

Idq=150mA
Pin=0.8 W

VDS, DRAIN-SOURCE VOLTAGE (V)

Output Power vs. Gate Bias Voltage

20

480MHz

15

10

5

Pout, OUTPUT POWER (W)

0

0 0.5 1 1.5 2 2.5 3 3.5

500MHz

VDD=12.5V
Pin=0.8W

VGS, GATE BIAS VOLTAGE(V)

520MHz

520MH z

70

500MHz

60

520MH z

480MH z

50

40

Nd, DRAIN EFFICIENCY (%)

Idq=150mA
Pin=0.8W

30

7 8 9 1011121314151617

VDS, DRAIN-SOURCE VOLTAGE (V)

Output Power vs. Input Power

18

16

14

12

10

8

6

4

Pout, OUTPUT POWER (W)

2

0

0 0.2 0.4 0.6 0.8 1 1.2

480MHz

520MH z

500MHz

PD55015S

Pin, INPUT POWER (W)

VDD=12.5V

DQ

I

=150mA

Power Gain vs. Output Power

18

16

14

12

500MHz

Gp, POWER GAIN (dB)

10

8

0 2 4 6 8 10 12 14 16 18

Pout, OUTPUT POWER (W)

480MH z

520MHz

VDD=12.5V
I

DQ =150mA

Drain Efficiency vs. Output Power

70

60

50

40

30

20

Nd, DRAIN EFFICIENCY (%)

10

0

024681012141618

480MHz

Pout, OUTPUT POWER (W)

500MHz

520MHz

VDD=12.5V
I

=150mA

DQ

5/10

PD55015 - PD55015S

TYPICAL PERFORMANCE

Return Loss vs. Output Power

Output Power vs. Bias Current

0

-10

-20

-30

Rtl, RETURN LOSS (dB)

VDD=12.5V

DQ

I

=150mA

-40
024681012141618

500MHz

520MHz

Pout, OUTPUT POWER (W)

Drain Efficiency vs. Bias Current

70

60

50

480MHz

480MH z

500MHz

520MHz

520MHz

20

18

480MHz

16

14

12

Pout, OUTPUT POWER (W)

10

8

0 200 400 600 800 1000

500MH z

520MH z

Idq, BIAS CURRENT (mA)

Output Power vs. Drain Voltage

25

20

15

10

VDD=12.5V
Pin=0 . 5W

480MHz

500MH z

520MH z

40

Nd, DRAIN EFFICIENCY (%)

30

0 200 400 600 800 1000

Idq, BIAS CURRENT (mA)

Drain Efficency vs. Drain Voltage

70

480MHz

60

520MHz

Idq=150mA
Pin=0.5W

7 8 9 10 11 12 13 14 15 16 17

Nd, DRAIN EFFICIENCY (%)

50

40

30

VDS, DRAIN-SOURCE VOLTAGE (V)

500MH z

VDD=12.5V
Pin=0.5 W

Pout, OUTPUT POWER (W)

5

0

7 8 9 1011121314151617

Idq=150mA
Pin=0.5W

VDS, DRAIN-SOURCE VOLTAGE (V)

Output Power vs. Gate Bias Voltage

20

480MHz

15

10

5

Pout, OUTPUT POWER (W)

0

0 0.5 1 1.5 2 2.5 3 3.5

VGS, GATE BIAS VOLTAGE(V)

500MHz

520MH z

VDD=12.5V
Pin=0.5W

6/10

TEST CIRCUIT SCHEMATIC

PD55015 - PD55015S

TEST CIRCUIT COMPONENT PART LIST

B1,B2 FERRITE BEAD R2
C1,C12 300pF, 100 mil CHIP CAPACITOR R3

C2,C3,C4,C11,
C12,C13

C6,C18 pF 100 mil CHIP CAP Z2 1.082” X 0.080” MICROSTRIP

C9,C15

C8,C16 0.1mF, 100 mil CHIP CAP Z4,Z5 0.260” X 0.223” MICROSTRIP
C7,C17 1,000pF 100 mil CHIP CAP Z6 0.050” X 0.080” MICROSTRIP
C5, C10 33pF,100 mil CHIP CAP Z7 0.551” X 0.080” MICROSTRIP
L1 56nH, 7 TURN, COILCRAFT Z8 0.825” X 0.080” MICROSTRIP
N1,N2 TYPE N FLANGE MOUNT Z9 0.489” X 0.080” MICROSTRIP

R1

1 TO 20 pF TRIMMER CAPACITOR Z1 0.471” X 0.080” MICROSTRIP

10

µF,50V ELECTROLYTIC

CAPACITOR

15

Ω, 1W CHIP RESISTOR

Z3 0.372” X 0.080” MICROSTRIP

BOARD

Ω, 1W CHIP RESISTOR

1k

Ω, 1W CHIP RESISTOR

33 k

ROGER, ULTRA LAM 2000

ε

THK 0.030”
2oz ED Cu 2 SIDES

r=2.55

7/10

PD55015 - PD55015S

TEST CIRCUIT

TEST CIRCUITTEST CIRCUIT

TEST CIRCUIT PHOTOMASTER

4inches

6.4 inches

8/10

PowerSO-10RF (Straight Lead) MECHANICAL DATA

PD55015 - PD55015S

PowerSO-10RF (Formed Lead) MECHANICAL DATA

9/10

PD55015 - PD55015S

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or otherrightsofthird partieswhich may result from its use. No license isgranted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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