Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
IT(av)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
02550
Tlead orTtab (°C)
75
100125
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature.
IT(av)(A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
02550
Tamb(°C)
75
100125
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K = [Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-21E-1
1E+0
tp(s)
1E+11E+2
5E+2
3/5
P0130AA
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH, IL[Tj] / IGT,IH, IL[T] = 25°C
6
5
4
3
2
1
0
Tj(°C)
0-20-4020406080100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt[Rgk=1k ]Ω
10.0
1.0
Fig. 5:Relative variation of holding current versus
gate-cathode resistance (typical values).
IH[Rgk]/IH[Rgk=1k ]Ω
Rgk(kΩ)
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk=1k ]Ω
10
8
6
4
Rgk(kΩ)
0.1
0
0.4 0.6 0.8 1.00.21.6 1.8 2.01.2 1.4
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
8
7
6
5
4
3
2
1
0
1101001000
Repetitive
Tamb=25°C
Non repetitive
Tj initial=25°C
tp=10ms
Onecycle
Numberofcycles
2
Cgk(nF)
0
03
21
5
4
6
7
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A), I t(A s)
100.0
10.0
1.0
0.1
0.01
22
0.10
tp(ms)
1.00
10.00
4/5
P0130AA
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
1E+1
Ω
1E+0
1E-1
1E-2
0.51.01.52.02.53.03.54.04.5
VTM(V)
PACKAGE MECHANICAL DAT A
TO-92 (Plastic)
BAC
F
D
DIMENSIONS
REF .
a
MillimetersInches
Min.Typ.Max.Min.Typ.Max.
A1.350.053
B4.700.185
C2.540.100
D4.400.173
E
E12.700.500
F3.700.146
a0.500.019
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