ST P0130AA User Manual

®

P0130AA

SENSITIVE 0.8A SCRs

MAIN FEATURES:

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

0.8 A

100 V

1 µA

DESCRIPTION

The P0130AA is a gate sens itive SCR, packaged

in TO-92, used in conjunction o f a TN22 A.S.D™
and of a resistor in electronic starter for fluo res­cent tubelamps.

A

G

K

TO-92

ABSOLUTE RATINGS (lim iting values)

Symbol Parameter Value Unit

I

T(RMS)

IT

(AV)

I

TSM

²

I

dI/dt

I

GM

P

G(AV)

T

stg

Tj

May 2002 - Ed: 2

RMS on-state current (180° conduction angle)

Average on-state current (180° conduction angle)

Tl = 55°C 0.8

Tl = 55°C 0.5

Non repetitive surge peak on-state current tp = 8.3 ms

Tj = 25°C

tp = 10 ms 7

tI

²

t Value for fusing

Critical rate of rise of on-state current
I

= 2 x IGT , tr ≤ 100 ns

G

tp = 10ms Tj = 25°C 0.24

F = 60 Hz Tj = 125°C 50 A/µs

Peak gate current tp = 20 µs Tj = 125°C 1 A
Average gate power dissipation Tj = 125°C 0.1 W

Storage junction temperature range
Operating junction temp erature range

- 40 to + 150

- 40 to + 125

8

A

A

A

2

S

A

°C

1/5

P0130AA

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions

I

GT

VD = 12 V RL = 140 Ω

V

GT

V
V

dV/dt V

V

V

I

DRM

I

RRM

VD = V

GD

IRG = 10 µA

RG

I

I

H

I

L

TM

t0

R

= 50 mA RGK = 1 kΩ

T

IG = 1 mA RGK = 1 kΩ

= 67 % V

D

ITM = 1.6 A tp = 380 µs
Threshold voltage Tj = 125°C MAX. 0.95 V
Dynamic resistance Tj = 125°C MAX. 600 mΩ

d

V

DRM

RL = 3.3 kΩ RGK = 1 kΩ

DRM

RGK = 1 kΩ

DRM

= V

RGK = 1 kΩ Tj = 25°C MAX. 1 µ A

RRM

MIN. 0.1

MAX. 1
MAX. 0.8 V

Tj = 125°C MIN.

MIN.

MAX. 5 mA
MAX.

Tj = 125°C MIN. 25 V/µs

Tj = 25°C MAX. 1.95 V

Tj = 125°C MAX. 100

P0130AA Unit

0.1 V
8V

6

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th(j-i)

th(j-a)

Junction to case (DC)
Junction to ambient (DC)

80

150

µA

mA

°C/W
°C/W

PRODUCT SELECTOR

Part Number Voltage Sensitivity

P0130AA 100V 1 µA TO-92

Package

2/5

P0130AA

ORDERING INFORMATION

Blank

PACKAGE:
A:TO-92

PACKING MODE:
1EA3:TO-92 bulk
2AL3:TO-92 ammopack

SENSITIVE
SCR
SERIES

CURRENT:0.8A

P 01 30 A A 1EA3

VOLTAGE:
A: 100V

SENSITIVITY:
30: 1µA

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing mode

P0130AA 1EA3 P0130AA 0.2 g 2500 Bulk
P0130AA 2AL3 P0130AA 0.2 g 2000 Ammopack

Note: xx = sensitivity, y = voltage

Fig. 1: Maximum average power dissipation

versus average on-state current.

P(W)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6

Fig. 2-1: Average and D.C. on-state current
versus lead temperature.

IT(av)(A)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
02550

Tlead orTtab (°C)

75

100 125

Fig. 2-2: Average and D.C. on-state current
versus ambient temperature.

IT(av)(A)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
02550

Tamb(°C)

75

100 125

Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.

K = [Zth(j-a)/Rth(j-a)]

1.00

0.10

0.01
1E-2 1E-1

1E+0

tp(s)

1E+1 1E+2

5E+2

3/5

P0130AA

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus
junction temperature (typical values).

IGT,IH, IL[Tj] / IGT,IH, IL[T] = 25°C

6
5

4
3
2
1

0

Tj(°C)

0-20-40 20 40 60 80 100 120 140

Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).

dV/dt[Rgk] / dV/dt[Rgk=1k ]Ω

10.0

1.0

Fig. 5:Relative variation of holding current versus
gate-cathode resistance (typical values).

IH[Rgk]/IH[Rgk=1k ]Ω

Rgk(kΩ)

Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).

dV/dt[Cgk] / dV/dt[Rgk=1k ]Ω

10

8

6

4

Rgk(kΩ)

0.1
0

0.4 0.6 0.8 1.00.2 1.6 1.8 2.01.2 1.4

Fig. 8: Surge peak on-state current versus
number of cycles.

ITSM(A)

8
7
6
5
4
3
2
1
0

1 10 100 1000

Repetitive

Tamb=25°C

Non repetitive
Tj initial=25°C

tp=10ms

Onecycle

Numberofcycles

2

Cgk(nF)

0

03

21

5

4

6

7

Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width

tp < 10 ms, and corresponding value of I²t.

ITSM(A), I t(A s)

100.0

10.0

1.0

0.1

0.01

22

0.10

tp(ms)

1.00

10.00

4/5

P0130AA

Fig. 10: On-state characteristics (maximum

values).

ITM(A)

1E+1

Ω

1E+0

1E-1

1E-2

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VTM(V)

PACKAGE MECHANICAL DAT A

TO-92 (Plastic)

BAC

F

D

DIMENSIONS

REF .

a

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173

E

E 12.70 0.500
F 3.70 0.146
a 0.50 0.019

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by impl i cation or ot herwise under any patent or patent r ig hts of STM i croelectro ni cs. Specif i cations mentioned i n this publ i cation are subje ct
to change wi t hout notice. T hi s publicati on supersede s and replaces all in formation previously supplied. STM i croelectro ni cs products are not
authori zed for use as critical com ponents in li fe support devices or syst ems withou t ex press written approval of STMicroelectroni cs.

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