ST MCS 82304 Service Manual

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RF & MICROWAVE TRAN SIST ORS

GENERAL PURPOSE AMPLIFI ER APPLICAT IONS

.REFRACTORY/GOLD METALLIZATION

.VSWR CAPABILITY 20: 1 @ RATED

CONDITIONS

.HERMETIC STRIPAC

. P

OUT

3.8 W MIN. WITH 10.0 dB GAIN

=



PACKAGE

ORDER CODE

MSC82304

PIN CONNECTION

MSC82304

PRELIMINARY DATA

.250 2LF L (S010)

hermetically sealed

BRANDING

82304

DESC RIPT ION

The MSC82304 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.

The MSC82304 was designed for Class C Am­plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Uni t

P

DISS

I

C

V

CC

T

J

T

STG

THERMA L DATA

R

TH(j-c)

*Appliesonly to ratedRF amplifieroperation

Power Dissipation* (TC≤ 50°C) 11.5 W
Device Current* 600 mA
Collector-Supply Voltage* 26 V
Junction Temperature 200
Storage Temperature − 65 to +200

Junction-Case Thermal Resistance* 13

case

= 25°C)

1. Collector 3. Emitter

2. Base 4. Base

°
°

°

C/W

C
C

October 1992

1/4

MS C82304

ELECTRICAL SPECIFICATIO NS (T

case

= 25°C)

STATIC

Symbol Test Conditions

BV
BV
BV

I

CBO

EBO
CER

CBO

h

FE

IC= 1mA IE= 0mA 44 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 44 — — V
VCB= 22V — — 0.5 mA
VCE= 5V IC= 250mA 30 — 300 —

DYNAMIC

Symbol Test Conditi ons

P

OUT

η

cf=2.3 GHz P

G

P

C

OB

f = 2.3 GHz P

f = 2.3 GHz P
f = 1 MHz V

0.38 W V

=

IN

0.38 W V

=

IN

0.38 W V

=

IN

22 V — — 5.0 pF

CB =

Value

Min. Typ. Max.

Value

Min. Typ. Max.

22 V 3.8 — — W

=

CC

22 V 40 — — %

=

CC

22 V 10.0 — — dB

=

CC

Unit

Unit

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