–4.5 to 5.5V for M95320 and M95640
–2.5 to 5.5V for M95320-W and M95320-W
–1.8 to 5.5V for M95320-R and M95640-R
–1.65 to 5.5V for M95320-S and M95640-S
These electrically erasa ble pr ogram mable memory (EEPROM) devices are accessed by a high
speed SPI-compatible bus.
The M95320, M95320-W, M95320-R and
M95320-S are 32Kbit devices organi zed as 4096
x 8 bits. The M95640, M95640-W, M95640-R and
M95640-S are 64Kbit devices organi zed as 8192
x 8 bits.
Table 2. How to Identify Previous, Current and New Products by the Process Identification Letter
Note: 1. See PACKAGE MECHANICAL section for package di-
mensions and how to identify pin-1.
2. NC, Not Connected.
Table 3. Signal Names
CSerial Clock
DSerial data Input
QSerial data Output
V
SS
AI01789C
S
W
HOLD
V
CC
V
SS
Chip Select
Write Protect
Hold
Supply Voltage
Ground
AI01790D
8
CC
HOLDQ
7
C
6
DV
5
5/42
M95640, M95320
SIGNAL DESCRIPTION
During all operations, VCC must be held stable and
within the specified valid range: V
(max).
V
CC
All of the input and output signals must be held
High or Low (according to voltages of V
or VOL, as specified in Table 16. to Table 20.).
These signals are described next.
Serial Data Output (Q). This output signal is
used to transfer data serially out of the device.
Data is shifted out on the falling edge of Serial
Clock (C).
Serial Data Input (D). This in put si gna l is used to
transfer data serially into the device. It receives instructions, addresse s, and the data to b e written.
Values are latched on the rising edge of Serial
Clock (C).
Serial Clock (C). This input signal provides the
timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are
latched on the rising edge of Serial Clock (C). Data
on Serial Data Output (Q) changes after the falling
edge of Serial Clock (C).
Chip Select (S
). When this input signal is High,
the device is des elected and Serial Data Out put
(min) to
CC
, VOH, V
IH
(Q) is at high impedance. Unless an internal Write
cycle is in progress, the device will be in the Standby Power mode. Driving Chip Se lect (S
lects the device, placing it in the Active Power
mode.
IL
After Power-up, a falling edge on Chip Sel ect (S
is required prior to the start of any instruction.
Hold (HOLD
). The Hold (HOLD) signal is used to
pause any serial c ommunicatio ns with the device
without deselecting the device.
During the Hold condition, the S erial Data Output
(Q) is high impedance, and Serial Data Input (D )
and Serial Clock (C) are Don’t Care.
To start the Hold condition, the device must be selected, with Chip Select (S
Write Protect (W
). The main purpose of this in-
) driven Low.
put signal is to freeze the size of the area of memory that is protected against Write instru ctio ns (a s
specified by the values in the BP1 and BP0 bits of
the Status Register).
This pin must b e driven either High or Low, and
must be stable during all write operations.
) Low se-
)
6/42
CONNECTING TO THE SPI BUS
These devices are fully compatible with the SPI
protocol.
All instructions, addresses and input data bytes
are shifted in to the device, most significant bit
first. The Serial Data Input (D) i s sampled o n the
first rising edge of the S erial Clock (C) a fter Chip
Select (S
) goes Low.
All output data bytes are shifted out of the device,
most significant bit first. The Serial Data Output
Figure 4. Bus Master and Memory Devices on the SPI Bus
SPI Interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
Bus Master
(ST6, ST7, ST9,
ST10, Others)
CS3CS2CS1
SDO
SDI
SCK
CQD
RRR
SPI Memory
Device
(Q) is latched on the first fa ll ing edge of the Serial
Clock (C) after the instruct ion (such as the Read
from Memory Array and Read S tatus Register in structions) have been clocked into the device.
Figure 4. shows three devices, connected to an
MCU, on a SPI bus. Only one device is selected at
a time, so only one device drives the S erial Data
Output (Q) line at a tim e, a ll th e others being high
impedance.
V
CC
CQD
SPI Memory
Device
M95640, M95320
V
CC
V
CC
CQD
SPI Memory
Device
V
CC
S
Note: The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriat e.
HOLD
W
S
HOLD
W
S
W
AI03746e
HOLD
7/42
M95640, M95320
SPI Modes
These devices ca n be driv en by a m icrocontr oller
with its SPI peripheral runnin g in either of the two
following modes:
–CPOL=0, CPHA=0
–CPOL=1, CPHA=1
For these two modes, inpu t data is latched in on
the rising edge of Serial Clock (C), and output data
Figure 5. SPI Modes Supported
CPHA
CPOL
0
0
1
1
C
C
D
Q
MSB
is available from the falling edge of Serial Clock
(C).
The difference between the two modes, as shown
in Figure 5., is the clock polarity when the bus
master is in Stan d-by mode and not transferring
data:
–C remains at 0 for (CPOL=0, CPHA=0)
–C remains at 1 for (CPOL=1, CPHA=1)
MSB
AI01438B
8/42
OPERATING FEATURES
Power-Up
When the power supply is turned on, V
from V
During this time, the Ch ip Select (S
lowed to follow the V
to VCC.
SS
) must be al-
voltage. It must not be al-
CC
lowed to float, but should be connected to V
a suitable pull-up resistor.
As a built in safety feature, Chip Select (S
sensitive as well as level sensitive. After Powerup, the device does not become selected until a
falling edge has first been detected on Chip Select
(S
). This ensures that Chip Select (S) must have
been High, prior to going Low to star t the first operation.
Power On Reset: V
Lock-Out Write Protect
CC
In order to prevent inadvertent Write operations
during Power-up, each device include a Power On
Reset (POR) circuit. At Power-up, the dev ice will
not respond to any instruction until V
reached the Power On Reset threshold voltage.
This threshold is lower than the V
min operating
CC
voltage defined in Tables 10, 11, 12 and 13.
Similarly, as soon as V
drops from the normal
CC
operating voltage, below the Power On Reset
threshold voltage, the dev ice stops respondi ng to
any instruction sent to it.
Prior to selecting and issuing instructions to the
memory, a valid stable V
voltage must be ap-
CC
plied. This voltage must remain stable and valid
until the end of the transmissi on of the instruc tion
and, for a Write in struction, until the complet ion o
the internal write cycle (t
).
W
Power-down
At Power-down, the device must be deselected.
Chip Select (S
voltage applied on V
) should be allowed to follow the
.
CC
rises
CC
via
CC
) is edge
has
CC
M95640, M95320
Active Power and Standby Power Modes
When Chip Select (S
ed, and in the Active Power mode. The device
consumes I
CC
20..
When Chip Sel ec t (S
lected. If an Erase/Writ e cycle is not currently in
progress, the device then goe s in to the Standby
Power mode, and the device consump tion drops
to I
.
CC1
Hold Condition
The Hold ( HO LD
rial communications with the device without resetting the clocking sequence.
During the Hold condition, the S erial Data Output
(Q) is high impedance, and Serial Data Input (D )
and Serial Clock (C) are Don’t Care.
To enter the Hold condition, th e device must be
selected, with Chip Select (S
Normally, th e device i s kept sele cted, for the whole
duration of the Hold condition. Deselecting the device while it is in the Hold condition, has the effect
of resetting the state of the device, and this mechanism can be us ed if it is req uired to reset any pr ocesses that had been in progress.
The Hold condition starts when the Hol d (HOLD
signal is driven Low at the same time as Serial
Clock (C) already being Low (as shown in Figure
6.).
The Hold condition ends wh en the Hold (HOLD
signal is driven High at the same time as Serial
Clock (C) already being Low.
Figure 6. also shows what happens if the rising
and falling edges are not timed to coincide with
Serial Clock (C) being Low.
) is Low, the device is se lec t-
, as specified in Tabl e 16. to Table
) is High, the d ev ice is de se -
) signal is used to pau se a ny se -
) Low.
)
)
9/42
M95640, M95320
Figure 6. Hold Condition Activation
C
HOLD
Hold
Condition
Status Register
Figure 7. shows the position of the Status Register
in the control logic of the device. The Statu s Register contains a number of status and co ntrol bits
that can be read or set (as appropriate) by specific
instructions.
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write or Write
Status Register cycle.
WEL bit. The Write Enable Latch (WE L) bit indicates the status of the internal Write Enable Latch.
BP1, BP0 bits. The Block Protect (BP1, BP0) bits
are non-volatile. They define the size of the area to
be software protected against Write instructions.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W
) signal. The Status Register
Write Disable (SRWD) bi t and Write Protect (W
signal allow the device to b e put in the Hardware
Protected mode. In this mode, the non-volatile bits
of the Status Register (SRWD, BP1, BP0) become
read-only bits.
Table 4. Status Register Format
b7 b0
SRWD0 0 0 BP1 BP0 WEL WIP
Status Register Write Protect
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
Hold
Condition
Data Protection and Protocol Control
Non-volatile memory devices can be used in environments that are particularly noisy, and within applications that could experience problems if
memory bytes are corrupted. Consequently, the
device features the following data protection
mechanisms:
■Write and Write Status Register instructions
are checked that they consist of a number of
clock pulses that is a multiple of eight, before
they are accepted for execution.
■All instructions that modify data must be
preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch
(WEL) bit. This bit is returned to its reset state
by the following events:
–Power-up
)
–Write Disable (WRDI) instruction
completion
–Write Status Register (WRSR) instruction
completion
–Write (WRITE) instruction completion
■The Block Protect (BP1, BP0) bits allow part of
the memory to be configured as read-only.
This is the Software Protected Mode (SPM).
■The Write Protect (W) signal allows the Block
Protect (BP1, BP0) bits to be protected. This is
the Hardware Protected Mode (HPM).
For any instruction to be accepted, and executed,
Chip Select (S
) must be driven High after the rising
edge of Serial Clock (C) for the last bit of the instruction, and before the next rising edge of Serial
Clock (C).
Two points need to be noted in the previous sentence:
AI02029D
10/42
M95640, M95320
–The ‘last bit of the instruction’ can be the
eighth bit of the instruction code, or the eighth
bit of a data byte, depending on the instruction
–The ‘next rising edge of Serial Clock (C)’ might
(or might not) be the next bus transaction for
some other device on the SPI bus.
(except for Read Status Register (RDSR) and
Read (READ) instructions).
Each instruction star ts wi th a singl e- by te cod e, a s
summarized in Table 6..
If an invalid instruct ion is sent ( one not contain ed
in Table 6.), the device automaticall y des elect s it self.
M95640, M95320
Table 6. Instruction Set
Instruc
tion
WREN Write Enable0000 0110
WRDI Write Disable0000 0100
RDSR Read Status Register 0000 0101
WRSR Write Status Register 0000 0001
READ Read from Memory Array0000 0011
WRITE Write to Memory Array 0000 0010
Description
Instruction
Format
13/42
M95640, M95320
Write Enable (WREN)
The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction. The only
way to do this is to send a Write Enable instruction
to the device.
Figure 8. Write Enable (WREN) Sequence
S
0
C
D
High Impedance
Q
Write Disable (WRDI)
One way of resetting the Write Enable Latch
(WEL) bit is to send a Write Disable in struction to
the device.
As shown in Fi gure 9., to send this instruction to
the device, Chip Select (S
) is driven Low, and the
bits of the instruc tion by te a r e shi fted i n, o n S er ial
Data Input (D).
As shown in Figu re 8., to send this instructio n to
the device, Chip Select (S
) is driven Low, and the
bits of the instruc tion by te a r e s hifted i n, o n S er ial
Data Input (D). The device then enters a wait
state. It waits for a the device to be deselected, by
Chip Select (S
2134567
Instruction
) being driven High.
AI02281E
The device then e nters a wait state. It waits for a
the device to be deselected, by Chip Select (S
ing driven High.
The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events:
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a
Write or Write Status Register cycle is in progress.
When one of these c ycles is in p rogr ess, it is r ecommended to check the Write In Progress (WIP)
bit before sending a new instruction to the device.
It is also possible to read the Status Register continuously, as shown in Figure 10..
The status and control bits o f the Status Regi ster
are as follows:
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write or Write
Status Register cycle. When set to 1, such a cycle
is in progress, whe n rese t to 0 no such cyc le is in
progress.
WEL bit. The Write Enable Latch (WE L) bit indicates the status of the internal Write Enable Latch.
When set to 1 the inte rnal Write Enable Latch is
set, when set to 0 the inter nal W rite Ena ble Latc h
is reset and no Writ e or Write Status Register instruction is accepted.
Figure 10. Read Status Register (RDSR) Sequence
BP1, BP0 bits. The Block Protect (BP1, BP0) bits
are non-volatile. They define the size of the area to
be software protected agains t Write instructions.
These bits are written with the Write Status Register (WRSR) instruction. When one or both of the
Block Protect (BP1, BP 0) bit s is set to 1, th e rele vant memory area (as defined in Table 4.) becomes protected against Write (WRITE)
instructions. The Block Protect (BP1, BP0) bits
can be written provided that the Hardware Protected mode has not been set.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W
) signal. The Status Register
Write Disable (SRWD) bi t and Write Protect (W
signal allow the device t o be put in the Hardwar e
Protected mode (when the Status Register Write
Disable (SRWD) bit is set to 1, and Writ e Protect
(W
) is driven Low). In this mode, the non-vol atile
bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the Write Status Register
(WRSR) instruction is no longer accepted for execution.
)
S
213456789101112131415
0
C
Instruction
D
Q
High Impedance
Status Register Out
7 6543210
MSB
Status Register Out
7 6543210
MSB
7
AI02031E
15/42
M95640, M95320
Write Status Register (WRSR)
The Write Status Register (WRSR ) instructi on allows new values to be written to the Status Register. Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded and executed, the device se ts
the Write Enable Latch (WEL).
The Write Status Register ( WRSR) instruction is
entered by drivin g Chip Select (S
) Low, followed
by the instruction code and the data byte on Serial
Data Input (D).
The instruction sequence is shown in F i gure 11..
The Write Status Register (WRSR) instruction has
no effect on b6, b5, b4, b1 and b0 of the S tatus
Register. b6, b5 and b4 are always read as 0.
Chip Select (S
) must be driven High after the rising
edge of Serial Cloc k (C) that latch es in th e eig hth
bit of the data byte, and before the next rising edge
of Serial Clock (C). Otherwise, the Write Status
Register (WRSR) instruc tion is not executed. As
soon as Chip Select (S
) is driven High, the self-
timed Write Status Register cycle (whose duration
) is initiated. Wh ile the Write Status R egister
is t
W
cycle is in progres s, the Status Register ma y still
be read to check the value of the Write In Progress
(WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and
is 0 when it is completed. W hen the cy cle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (W RSR) instruction al lows the user to change t he values of the Block
Protect (BP1, BP0) bits, to defin e the size of the
area that is to be treated as r ead-o nly, as de fined
in Table 4..
The Write Status Register (WRSR) instruction also
allows the user to s et o r res et t he Sta tus Re gi ste r
Write Disable (SRWD) bi t in accordance with the
Write Protect (W
) signal. The Status Register
Write Disable (SRWD) bi t and Write Protect (W
signal allow the device t o be put in the Hardwar e
Protected Mode (HPM). The Write Status Register
(WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is entered.
The contents of the Sta tus Reg ister W rite Dis ab le
(SRWD) and Block Protect (BP1, BP0) bits are frozen at their current values from just before the
start of the execution of Write Status Register
(WRSR) instruction. The new, updated, values
take effect at the moment of completion of the execution of Write Sta tus Register (W RSR) instruction.
)
Table 7. Protection Modes
W
Signal
Note: 1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 5..
SRWD
Bit
10
00
11
01
Mode
Software
Protected
(SPM)
Hardware
Protected
(HPM)
The protection feature s of the de vice are summa rized in Tab le 5..
When the Status Regis ter Write Disable (S RWD)
bit of the Status Register is 0 (its initial delivery
state), it is possible to wr it e to the S tatu s Regi ste r
provided that the Write Enable Latch (WEL) bit has
previously been set by a Write Enable (WREN) instruction, regardles s of the whethe r Write Pr otect
(W
) is driven High or Low.
When the Status Regis ter Write Disable (S RWD)
bit of the Status Register is set to 1, two cases
need to be considered, depen ding on the sta te of
Write Protect (W
):
Write Protection of the
Status Register
Status Register is Writable
(if the WREN instruction
has set the WEL bit)
The values in the BP1 and
BP0 bits can be changed
Status Register is
Hardware write protec te d
The values in the BP1 and
BP0 bits cannot be
changed
Protected Area
Write Protected
Write Protected
–If Write Protect (W
possible to write to the Status Register
provided that the Write Enable Latch (WEL) bit
has previously been set by a Write Enable
(WREN) instruction.
–If Write Protect (W
possible to write to the Status Register
the Write Enable Latch (WEL) bit has
previously been set by a Write Enable
(WREN) instruction. (Attempts to write to the
Status Register are rejected, and are not
accepted for execution). As a consequence,
all the data bytes in the memory area that are
software protected (SPM) by the Block Protect
Memory Content
1
Unprotected Area
Ready to accept Write
instructions
Ready to accept Write
instructions
) is driven High, it is
) is driven Low, it is
1
not
even
if
16/42
M95640, M95320
(BP1, BP0) bits of the Status Register, are
also hardware protected against data
modification.
Regardless of the order of the two events, the
Hardware Protected Mode (HPM) can be entered:
–by setting the Status Register Write Disable
(SRWD) bit after driving Write Protect (W
–or by driving Write Protect (W
) Low after
) Low
setting the Status Register Write Disable
(SRWD) bit.
The only way to exit the Hardware Protected Mode
(HPM) once entered is to pull Write Protect (W
)
High.
Figure 11. Write Status Register (WRSR) Sequence
S
213456789101112131415
0
C
InstructionStatus
If Write Protect (W
) is permanently tie d High, the
Hardware Protected Mode (HPM) can never be
activated, and only the S oftware Protected Mode
(SPM), using the Block Prote ct (BP1, BP 0) bits of
the Status Register, can be used.
Table 8. Address Range Bits
Device
Address BitsA12-A0A11-A0
Note: b15 to b13 are Don’t Care on the 64 Kbit devices.
b15 to b12 are Don’t Care on the 32 Kbit devices.
Register In
32 Kbit
Devices
64 Kbit
Devices
D
High Impedance
Q
7654320
MSB
1
AI02282D
17/42
M95640, M95320
Read from Memory Array (READ)
As shown in Figure 12., to send this instr uction to
the device, Chip Select (S
) is first driven Low. The
bits of the instruction by te and address by tes are
then shifted in, on Serial Data Input (D). The ad dress is loaded into an internal addre ss register,
and the byte of data at that addres s i s shi fted out,
on Serial Data Output (Q).
If Chip Select (S
) continues to be driven Low, the
internal address register is automatically incremented, and the byte of data at the new address is
shifted out.
When the highest address is reached, the address
counter rolls over to zero, allowing the Read cycle
to be continued indefinitely. The whole memory
can, therefore, be read with a single READ instruction.
The Read cycle is termin ated b y drivin g Chip Se lect (S
(S
The first byte addr essed can be any byte within
any page.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Figure 12. Read from Memory Array (READ) Sequence
S
21345678910 2021222324252627
0
C
Instruction16-Bit Address
15
D
High Impedance
Q
14133210
MSB
) High. The rising edg e of the Chip Select
) signal can occur at any time during the cycle.
28 29 30
Data Out 1
7654317
MSB
31
Data Out 2
2
0
AI01793D
Note: Depending on the memory size, as shown in Table 8., the most significant address bits are Don’t Care.
18/42
M95640, M95320
Write to Memory Array (WRITE)
As shown in Figure 13., to send this instr uction to
the device, Chip Select (S
) is first driven Low. The
bits of the instruction b yte, address byte, and at
least one data byte are then shifted in, on Serial
Data Input (D).
The instruction is terminated by driving Chip Select (S
) High at a byte boundary of the input da ta.
In the case of Figure 13., this occurs after the
eighth bit of the data byte has been latched in, indicating that the instruction is being used to write
a single byte. The self-timed Write cycle starts,
and continues for a period t
(as specified in Ta-
WC
ble 22. to Table 26. ), at the end of which the Write
in Progress (WIP) bit is reset to 0.
If, though, Chip Select (S
) continues to be driven
Low, as shown in Figure 14., the next byte of input
data is shifted in, s o that m ore th an a sing le by te,
starting from the given address towards the end of
the same page, ca n be w ritten in a sin gle i ntern al
Write cycle.
Figure 13. Byte Write (WRITE) Sequence
Each time a new data byte i s shifted in, the lea st
significant bits o f the i ntern al ad dress count er ar e
incremented. If the number of data bytes sent to
the device exceeds t he page boundary, th e internal address counter rol ls over to the beg inning of
the page, and the previous data there are overwritten with the incoming data. (The page size of
these device s is 32 bytes).
The instruction is not accepted, and is not executed, under the following conditions :
–if the Write Enable Latch (WEL) bit has not
been set to 1 (by executing a Write Enable
instruction just before)
–if a Write cycle is already in progress
–if the device has not been deselected, by Chip
Select (S
) being driven High, at a byte
boundary (after the eighth bit, b0, of the last
data byte that has been latched in)
–if the addressed page is in the region
protected by the Block Protect (BP1 and BP0)
bits.
S
21345678910 2021222324252627
0
C
Instruction16-Bit Address
15
D
High Impedance
Q
Note: Depending on the memory size, as shown in Table 8., the most significant address bits are Don’t Care.
14133210
7654320
28 29 30
Data Byte
31
1
AI01795D
19/42
M95640, M95320
Figure 14. Page Write (WRITE) Sequence
S
21345678910 2021222324252627
0
C
28 29 30
31
Instruction16-Bit Address
15
D
S
343335 36 37 38 39 40 41 4244 45 46 4732
C
Data Byte 2
D
Note: Depending on the memory size, as shown in Table 8., the most significant address bits are Don’t Care.
7654320
1
14133210
43
Data Byte 3
7654320
1
7654320
Data Byte 1
Data Byte N
654320
1
1
AI01796D
20/42
POWER-UP AND DELIVERY STATE
Power-up State
After Power-up, the device is in the following state:
–Standby Power mode
–deselected (after Power-up, a falling edge is
required on Chip Select (S
instructions can be started).
–not in the Hold Condition
–the Write Enable Latch (WEL) is reset to 0
–Write In Progress (WIP) is reset to 0
) before any
M95640, M95320
The SRWD, BP1 and BP0 bi ts of th e Status Register are unchanged from the previous powerdown (they are non-volatile bits).
INITIAL DELIVERY STATE
The device is delivered with the memory array set
at all 1s (FFh). The Sta tus Regis ter Wr ite Dis able
(SRWD) and Block Protect (BP1 and BP0) bits are
initialized to 0.
21/42
M95640, M95320
MAXIMUM RATING
Stressing the devi ce outside the ratings li sted in
Table 9. may cause permanent damage to the de-
vice. These are stress ratings only, and oper ation
of the device at these, or any other conditions outside those indicated in the Oper ating sections of
Table 9. Absolute Maximum Ratings
SymbolParameterMin.Max.Unit
T
STG
T
LEAD
V
O
V
I
V
CC
V
ESD
Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/ 95/EU
2. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1=100pF, R1=1500Ω, R2=500Ω)
Storage Temp era tur e–65150°C
Lead Temperature during Soldering
Output Voltage–0.50
Input Voltage–0.506.5V
Supply Voltage–0.506.5V
Electrostatic Discharg e Voltage (Human Body mode l)
this specificatio n, is not implied. Exposure to Absolute Maximum Rating conditions for extended
periods may affect de vice rel iability. Refer also to
the STMicroelectroni cs SURE Program and othe r
relevant quality documents.
See note
2
–40004000V
1
V
+0.6
CC
°C
V
22/42
M95640, M95320
DC AND AC PARAMETERS
This section summ arizes the operati ng and measurement conditions , and the D C an d AC charac teristics of the device. The parameters in th e DC
and AC Characteristic tables that follow are derived from tests performed under the Measure-
Table 10. Operating Conditions (M95320 and M95640)
SymbolParameterMin.Max.Unit
ment Conditions summarized in the relevant
tables. Designers sho uld c heck tha t th e operating
conditions in thei r circui t match the measur ement
conditions when relying on the quoted parameters.
V
CC
Supply Voltage4.55.5V
Ambient Operating Temperature (Device Grade 6)–4085°C
T
A
Ambient Operating Temperature (Device Grade 3)–40125°C
Table 11. Operating Conditions (M95320-W and M95640-W)
SymbolParameterMin.Max.Unit
V
CC
Supply Voltage2.55.5V
Ambient Operating Temperature (Device Grade 6)–4085°C
T
A
Ambient Operating Temperature (Device Grade 3)–40125°C
Table 12. Operating Conditions (M95320-R and M95640-R)
Symbol
V
CC
T
A
Note: 1. This product is under development. For more information, please contact your nearest ST sales offi ce.
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 5MHz.
= 0V8pF
OUT
= 0V6pF
IN
Table 16. DC Characteristics (M95320 and M95640, Device Grade 6)
SymbolParameterTest ConditionMin.Max.Unit
I
I
I
CC1
I
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
CC
Supply Current
(Standby)
V
CC
V
CC
V
IN
V
IN
V
V
V
V
V
OH
Note: 1. For all 5V range devices, the device meets the output requirements for both TTL and CMOS standards.
Input Low Voltage–0.45
IL
Input High Voltage0.7 V
IH
1
Output Low Voltage
OL
1
Output High VoltageIOH = –2 mA, VCC = 5V0.8 V
2. Previous product version is identified by Process Identifica tion letter ‘S’.
3. Current product version is identified by Process Identification letter ‘V’’.
4. New product version is identified by Process Identification letter ‘P’.
5. Preliminary data.
V
= VSS or V
IN
S
= VCC, V
C = 0.1V
= 5V, Q = open,
V
CC
Previous Product
C=0.1V
CC
OUT
/0.9VCC at 5MHz,
CC
/0.9VCC at 10MHz,
CC
= VSS or V
2
CC
= 5V, Q= open, Current Product
C=0.1V
/0.9VCC at 20MHz,
CC
= 5V, Q = open, New Product
= VCC, V
S
CC
= 5V,
= VSS or VCC, Previous Product
= V
, V
S
CC
CC
= 5V,
= VSS or VCC, Current Product
= VCC, V
S
= VSS or VCC, New Product
IN
I
= 2 mA, VCC = 5V
OL
CC
= 5V,
4,5
4,5
3
± 2µA
± 2µA
4mA
3
5mA
10
2
10µA
2µA
2µA
0.3 V
CC
VCC+1V
CC
0.4V
CC
mA
V
V
24/42
M95640, M95320
Table 17. DC Characteristics (M95320 and M95640, Device Grade 3)
SymbolParameterTest ConditionMin.Max.Unit
I
I
I
CC1
I
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
CC
Supply Current
(Standby)
V
CC
V
CC
V
CC
V
IN
V
IN
V
V
V
V
V
OH
Note: 1. For all 5V range devices, the device meets the output requirements for both TTL and CMOS standards.
Input Low Voltage–0.45
IL
Input High Voltage
IH
1
Output Low VoltageIOL = 2mA, VCC = 5V0.4V
OL
1
Output High Voltage
2. Previous product version is identified by Process Identifica tion letter ‘S’.
3. Current product version is identified by Process Identification letters ‘B’.
4. New product version is identified by Process Identification letters ‘P’.
5. Preliminary data.
V
= VSS or V
S
= VCC, V
C = 0.1V
IN
OUT
/0.9VCC at 2MHz,
CC
CC
= VSS or V
CC
= 5V, Q = open, Previous Product
C = 0.1V
/0.9VCC at 5MHz,
CC
= 5V, Q= open, Current Product
C=0.1V
= 5V, Q = open, New Product
/0.9VCC at 20MHz,
CC
= V
CC
, V
S
CC
4,5
= 5V,
= VSS or VCC, Previous Product
= VCC, V
S
= VSS or VCC, Current Product
S
= V
= VSS or VCC, New Product
IN
I
= –2mA, VCC = 5V0.8 V
OH
CC
, V
CC
CC
= 5V,
3
= 5V,
4,5
± 2µA
± 2µA
2
3
2mA
4mA
12
2
20µA
5µA
2µA
0.3 V
CC
0.7 V
CC
CC
VCC+1
mA
V
V
V
25/42
M95640, M95320
Table 18. DC Characteristics (M95320-W and M95640-W, Device Grade 6)
SymbolParameterTest ConditionMin.Max.Unit
I
I
I
CC1
I
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
CC
Supply Current
(Standby)
= 2.5V, Q = open, Previous Product
V
CC
= 2.5V, Q = open, Current Product
V
CC
V
CC
V
IN
V
IN
V
V
V
V
V
Note: 1. Previous product version is identified by Process Identificatio n letter ‘S’.
Input Low Voltage–0.45
IL
Input High Voltage
IH
Output Low Voltage
OL
Output High Voltage
OH
2. Current product version is identified by Process Identification letter ‘V’’.
3. New product version is identified by Process Identification letter ‘P’.
4. Preliminary data.
V
= VSS or V
IN
S
= VCC, V
C = 0.1V
C = 0.1V
C=0.1V
OUT
/0.9VCC at 2MHz,
CC
/0.9VCC at 5MHz,
CC
/0.9VCC at10MHz,
CC
= 2.5V, Q = open, New Product
= VCC, V
S
= VSS or VCC, Previous Product
= VCC, V
S
= VSS or VCC, Current Product
S
= VCC, V
= VSS or VCC, New Product
IN
I
= 1.5mA, VCC = 2.5V
OL
I
= –0.4mA, VCC = 2.5V0.8 V
OH
CC
= VSS or V
= 2.5V,
CC
= 2.5V
CC
= 2.5V
CC
CC
1
2
3,4
1
2
3,4
0.7 V
CC
CC
± 2µA
± 2µA
2mA
3mA
5
2µA
1µA
1
0.3 V
CC
VCC+1
0.4V
mA
µA
V
V
V
Table 19. DC Characteristics (M95320-W and M95640-W, Device Grade 3)
SymbolParameterTest Condition
I
I
I
I
CC1
V
V
V
V
Note: 1. Current product version is identified by Process Identification letter ‘B’.
Input Leakage CurrentV
LI
Output Leakage Current
LO
S
C = 0.1V
V
= 2.5V, Q = open, Current Product
Supply Current
CC
Supply Current (Standby)
Input Low Voltage–0.45
IL
Input High Voltage
IH
Output Low Voltage
OL
Output High Voltage
OH
2. New product version is identified by Process Identification letter ‘P’.
CC
C=0.1V
V
= 2.5V, Q = open, New Product
CC
S
= VCC, V
I
OH
= VSS or V
IN
= VCC, V
I
OL
OUT
/0.9VCC at 5MHz,
CC
/0.9VCC at 10MHz,
CC
= 2.5V, V
CC
= 1.5mA, VCC = 2.5V
CC
= VSS or V
= VSS or V
IN
CC
= –0.4mA, VCC = 2.5V0.8 V
1
2
CC
Min.
0.7 V
CC
CC
Max.Unit
± 2µA
± 2µA
3mA
6mA
2µA
0.3 V
VCC+1
CC
V
V
0.4V
V
26/42
Table 20. DC Characteristics (M95320-R and M95640-R)
SymbolParameter
I
I
I
I
CC1
V
V
V
V
Note: 1. This product is under qualification. For more information, pleas e contact your nearest ST sales office .
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
CC
S
Supply Current (Standby)
Input Low Voltage–0.45
IL
Input High Voltage
IH
Output Low Voltage
OL
Output High Voltage
OH
2. Preliminary data.
= VCC, V
Test ConditionMin.
= VSS or V
V
IN
S
= VCC, V
C = 0.1V
V
I
= 0.15 mA, VCC = 1.8 V
OL
I
= –0.1 mA, VCC = 1.8 V0.8 V
OH
OUT
/0.9VCC at 5MHz,
CC
= 1.8 V, Q = open
CC
= VSS or VCC, V
IN
CC
= VSS or V
CC
CC
= 1.8V
0.7 V
Table 21. DC Characteristics (M95320-S and M95640-S)
SymbolParameter
I
Input Leakage CurrentV
LI
I
Output Leakage Current
LO
I
Supply Current
CC
S
I
V
V
Note: 1. This product is under qualification. For more information, pleas e contact your nearest ST sales office .
Supply Curre nt (Standby)
CC1
V
Input Low Voltage–0.45
IL
V
Input High Voltage0.7 V
IH
Output Low Voltage
OL
Output High Voltage
OH
2. Preliminary data.
= VCC, V
Test ConditionMin.
= VSS or V
IN
S
= VCC, V
C = 0.1V
V
I
= 0.15 mA, VCC = 1.65V
OL
I
= –0.1 mA, VCC = 1.65V0.8 V
OH
OUT
/0.9VCC at 2MHz,
CC
= 1.6 5 V, Q = open
CC
= VSS or VCC, V
IN
CC
= VSS or V
CC
CC
= 1.65V
1,2
CC
CC
M95640, M95320
1,2
CC
CC
1,2
Max.
± 1µA
± 1µA
3mA
1µA
0.3 V
CC
VCC+1
0.3V
1,2
Max.
± 1µA
± 1µA
1mA
1µA
0.3 V
CC
VCC+1V
0.3V
Unit
V
V
V
Unit
V
V
27/42
M95640, M95320
Table 22. AC Characteristics (M95320 and M95640, Device Grade 6)
Test conditions specified in Table 14. and Table 10.
Previous
Product
SymbolAlt.Parameter
Version
Min.Max.Min.Max.Min.Max.
f
f
C
t
SLCHtCSS1
t
SHCHtCSS2
t
SHSLtCS
t
CHSHtCSH
t
CHSL
1
t
CH
1
t
CL
2
t
CLCH
2
t
CHCL
t
DVCHtDSU
t
CHDXtDH
t
HHCH
t
HLCH
t
CLHL
t
CLHH
2
t
SHQZ
t
CLQV
t
CLQXtHO
2
t
QLQH
2
t
QHQL
t
HHQVtLZ
2
t
HLQZ
t
W
Note: 1. tCH + tCL must never be lower than the shortes t possible clock period, 1/fC(max).
2. Value guaranteed by characterization, not 10 0% t ested in production.
3. Previous product version is identified by Process Identifica tion letter ‘S’.
4. Current product version is identified by Process Identification letter ‘V’’.
5. New product version is identified by Process Identification letter ‘P’.
6. Preliminary Data.
Clock FrequencyD.C.5D.C.10D.C.20MHz
SCK
S Active Setup Time901515ns
S Not Active Setup Time901515ns
S Deselect Time1004020ns
S Active Hold Time902515ns
S Not Active Hold Time901515ns
t
Clock High Time904020ns
CLH
t
Clock Low Time904020ns
CLL
t
Clock Rise Time112µs
RC
t
Clock Fall Time112µs
FC
Data In Setup Time20155ns
Data In Hold Time301510ns
Clock Low Hold Time after HOLD not Active701515ns
Clock Low Hold Time after HOLD Active402015ns
Clock Low Set-up Time before HOLD Active000ns
Clock Low Set-up Time before HOLD not
Active
t
Output Disable Time1002520ns
DIS
t
Clock Low to Output Valid602520ns
V
000ns
Output Hold Time000ns
t
Output Rise Time502020ns
RO
t
Output Fall Time502020ns
FO
HOLD High to Output Valid502520ns
t
HOLD Low to Output High-Z1002520ns
HZ
t
Write Time1055ms
WC
3
Current
Product
Version
New Product
4
Version
5,6
Unit
28/42
Table 23. AC Characteristics (M95320 and M95640, Device Grade 3)
Test conditions specified in Table 14. and Table 10.
Previous
SymbolAlt.Parameter
Product
Version
3
Current
Product
Version
M95640, M95320
New
4
Product
Version
5,6
Unit
Min. Max.
f
t
SLCHtCSS1
t
SHCHtCSS2
t
SHSL
t
CHSHtCSH
t
CHSL
t
CH
t
CL
t
CLCH
t
CHCL
t
DVCHtDSU
t
CHDX
t
HHCH
t
HLCH
t
CLHL
t
CLHH
t
SHQZ
t
CLQV
t
CLQX
t
QLQH
t
QHQL
t
HHQV
t
HLQZ
t
W
Note: 1. tCH + tCL must never be lower than the shortes t possible clock period, 1/fC(max).
f
C
Clock FrequencyD.C.2D.C.5D.C.20MHz
SCK
S Active Setup Time2009015n s
S Not Active Setup Time2009015ns
t
S Deselect Time20010020ns
CS
S Active Hold Time2009015ns
S Not Active Hold Time2009015ns
1
t
Clock High Time2009020ns
CLH
1
t
Clock Low Time2009020ns
CLL
2
t
Clock Rise Time112µs
RC
2
t
Clock Fall Time112µs
FC
Data In Setup Time40205ns
t
Data In Hold Time503010ns
DH
Clock Low Hold Time after HOLD not Active1407015ns
Clock Low Hold Time after HOLD Active904015ns
Clock Low Set-up Time before HOLD Active000ns
Clock Low Set-up Time before HOLD not
Active
2
t
Output Disable Time25010020n s
DIS
t
Clock Low to Output Valid1506020ns
V
t
Output Hold Time000ns
HO
2
t
Output Rise Time1005020ns
RO
2
t
Output Fall Time1005020ns
FO
t
HOLD High to Output Valid1005020ns
LZ
2
t
HOLD Low to Output High-Z25010020ns
HZ
t
Write Time1055m s
WC
2. Value guaranteed by characterization, not 10 0% t ested in production.
3. Previous product version is identified by Process Identifica tion letter ‘S’.
4. Current product version is identified by Process Identification letter ‘B’.
5. New product version is identified by Process Identification letter ‘P’.
6. Preliminary Data.
00 0ns
Min.Max.Min.Max.
29/42
M95640, M95320
Table 24. AC Characteristics (M95320-W and M95640-W, Device Grade 6)
Test conditions specified in Table 14. and Table 11.
Previous
Product
SymbolAlt.Parameter
Version
Min.Max.Min.Max.Min.Max.
f
f
C
t
SLCHtCSS1
t
SHCHtCSS2
t
SHSL
t
CHSHtCSH
t
CHSL
1
t
CH
1
t
CL
2
t
CLCH
2
t
CHCL
t
DVCHtDSU
t
CHDX
t
HHCH
t
HLCH
t
CLHL
t
CLHH
2
t
SHQZ
t
CLQV
t
CLQXtHO
2
t
QLQH
2
t
QHQL
t
HHQV
2
t
HLQZ
t
W
Note: 1. tCH + tCL must never be lower than the shortes t possible clock period, 1/fC(max).
2. Value guaranteed by characterization, not 10 0% t ested in production.
3. Previous product version is identified by Process Identifica tion letter ‘S’.
4. Current product version is identified by Process Identification letter ‘V’’.
5. New product version is identified by Process Identification letter ‘P’.
6. Preliminary Data.
Clock FrequencyD.C.2D.C.5D.C.10MHz
SCK
S Active Setup Time2009030ns
S Not Active Setup Time2009030ns
t
S Deselect Time20010040ns
CS
S Active Hold Time200903 0ns
S Not Active Hold Time2009030ns
t
Clock High Time2009040ns
CLH
t
Clock Low Time2009040ns
CLL
t
Clock Rise Time112µs
RC
t
Clock Fall Time112µs
FC
Data In Setup Time402010ns
t
Data In Hold Time503010ns
DH
Clock Low Hold Time after HOLD not Active1407030ns
Clock Low Hold Time after HOLD Active904030ns
Clock Low Set-up Time before HOLD Active000ns
Clock Low Set-up Time before HOLD not
Active
t
Output Disable Time25010040ns
DIS
t
Clock Low to Output Valid1506040ns
V
000ns
Output Hold Time000ns
t
Output Rise Time1005040ns
RO
t
Output Fall Time1005040ns
FO
t
HOLD High to Output Valid1005040ns
LZ
t
HOLD Low to Output High-Z25010040ns
HZ
t
Write Time1055ms
WC
Current
Product
3
Version
New
Product
4
Version
5,6
Unit
30/42
Table 25. AC Characteristics (M95320-W and M95640-W, Device Grade 3)
Test conditions specified in Table 14. and Table 11.
Current Product
SymbolAlt.Parameter
Version
Min.Max.Min.Max.
f
t
SLCHtCSS1
t
SHCHtCSS2
t
SHSL
t
CHSHtCSH
t
CHSL
t
CH
t
CL
t
CLCH
t
CHCL
t
DVCHtDSU
t
CHDX
t
HHCH
t
HLCH
t
CLHL
t
CLHH
t
SHQZ
t
CLQV
t
CLQX
t
QLQH
t
QHQL
t
HHQV
t
HLQZ
t
Note: 1. tCH + tCL must never be lower than the shortes t possible clock period, 1/fC(max).
f
C
Clock FrequencyD.C.5D.C.10MHz
SCK
S Active Setup Time9030ns
S Not Active Setup Time9030ns
t
S Deselect Time10040ns
CS
S Active Hold Time9030ns
S Not Active Hold Time9030ns
1
t
Clock High Time9040ns
CLH
1
t
Clock Low Time9040ns
CLL
2
t
Clock Rise Time12µs
RC
2
t
Clock Fall Time12µs
FC
Data In Setup Time2010ns
t
Data In Hold Time3010ns
DH
Clock Low Hold Time after HOLD not Active7030ns
Clock Low Hold Time after HOLD Active4030ns
Clock Low Set-up Time before HOLD Active
Clock Low Set-up Time before HOLD not Active00ns
2
t
Output Disable Time10040ns
DIS
t
Clock Low to Output Valid6040ns
V
t
Output Hold Time00ns
HO
2
t
Output Rise Time5040ns
RO
2
t
Output Fall Time5040ns
FO
t
HOLD High to Output Valid5040ns
LZ
2
t
HOLD Low to Output High-Z10040ns
HZ
t
W
2. Value guaranteed by characterization, not 10 0% t ested in production.
3. Current product version is identified by Process Identification letter ‘V’’.
4. New product version is identified by Process Identification letter ‘P’.
5. Preliminary Data.
Write Time55ms
WC
0
3
M95640, M95320
New Product
Version
0ns
4,5
Unit
31/42
M95640, M95320
Table 26. AC Characteristics (M95320-R and M95640-R)
Test conditions specified in Table 14. and Table 12.
SymbolAlt.Parameter
f
C
t
SLCH
t
SHCH
t
SHSL
t
CHSH
t
CHSL
1
t
CH
1
t
CL
2
t
CLCH
2
t
CHCL
t
DVCH
t
CHDX
t
HHCH
t
HLCH
t
CLHL
t
CLHH
2
t
SHQZ
t
CLQV
t
CLQX
2
t
QLQH
2
t
QHQL
t
HHQV
2
t
HLQZ
t
W
Note: 1. tCH + tCL must never be lower than the shortes t possible clock period, 1/fC(max).
2. Value guaranteed by characterization, not 10 0% t ested in production.
3. Preliminary data: this product is under qualification. For more information, please contact your nearest ST sales office.
4. New product version is identified by Process Identification letter ‘P’.
f
SCK
t
CSS1
t
CSS2
t
CS
t
CSH
t
CLH
t
CLL
t
RC
t
FC
t
DSU
t
DH
t
DIS
t
t
HO
t
RO
t
FO
t
LZ
t
HZ
t
WC
Clock FrequencyD.C.5MHz
S Active Setup Time60ns
S Not Active Setup Time60ns
S Deselect Time90ns
S Active Hold Time60ns
S Not Active Hold Time60ns
Clock High Time90ns
Clock Low Time90ns
Clock Rise Time2µs
Clock Fall Time2µs
Data In Setup Time20ns
Data In Hold Time20ns
Clock Low Hold Time after HOLD not Active60ns
Clock Low Hold Time after HOLD Active60ns
Clock Low Set-up Time before HOLD Active00
Clock Low Set-up Time before HOLD not Active00
Output Disable Time80ns
V
Clock Low to Output Valid80ns
Output Hold Time0ns
Output Rise Time80ns
Output Fall Time80ns
HOLD High to Output Valid80ns
HOLD Low to Output High-Z80ns
Write Time5ms
Min.
3,4
Max.
3,4
Unit
32/42
Table 27. AC Characteristics (M95320-S Device Grade 3)
Test conditions specified in Table 14. and Table 12.
SymbolAlt.Parameter
f
C
t
SLCH
t
SHCH
t
SHSL
t
CHSH
t
CHSL
1
t
CH
1
t
CL
2
t
CLCH
2
t
CHCL
t
DVCH
t
CHDX
t
HHCH
t
HLCH
t
CLHL
t
CLHH
2
t
SHQZ
t
CLQV
t
CLQX
2
t
QLQH
2
t
QHQL
t
HHQV
2
t
HLQZ
t
W
Note: 1. tCH + tCL must never be lower than the shortes t possible clock period, 1/fC(max).
2. Value guaranteed by characterization, not 10 0% t ested in production.
3. Preliminary data: this product is under qualification. For more information, please contact your nearest ST sales office.
4. New product version is identified by Process Identification letter ‘P’.
f
SCK
t
CSS1
t
CSS2
t
CS
t
CSH
t
CLH
t
CLL
t
RC
t
FC
t
DSU
t
DH
t
DIS
t
t
HO
t
RO
t
FO
t
LZ
t
HZ
t
WC
Clock FrequencyD.C.2MHz
S Active Setup Time150ns
S Not Active Setup Time150ns
S Deselect Time200ns
S Active Hold Time150ns
S Not Active Hold Time150ns
Clock High Time200ns
Clock Low Time200ns
Clock Rise Time2µs
Clock Fall Time2µs
Data In Setup Time50ns
Data In Hold Time50ns
Clock Low Hold Time after HOLD not Active150ns
Clock Low Hold Time after HOLD Active150ns
Clock Low Set-up Time before HOLD Active00
Clock Low Set-up Time before HOLD not Active00
Output Disable Time200ns
V
Clock Low to Output Valid200ns
Output Hold Time0ns
Output Rise Time200ns
Output Fall Time200ns
HOLD High to Output Valid200ns
HOLD Low to Output High-Z200ns
Write Time10ms
BN = PDIP8
MN = SO8 (150 mil width)
DW = TSSOP8 (169 mil width)
MB = MLP8 (2x3 mm)
Device Grade
6 = Industrial temperature range, –40 to 85 °C.
Device tested with standard test flow
3 = Device tested with High Reliability Certified Flow
Automotive temperature range (–40 to 125 °C)
Option
blank = Standard Packing
T = Tape and Reel Packing
1
.
Plating Technology
blank = Standard SnPb plating
P or G = Lead-Free and RoHS compliant
Note: 1. ST strongly recommends the use of the Automotive Grade devic es fo r use in an aut omotiv e envir onmen t. The High Reliabi lity Cer-
tified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy.
2. Devices bearing the process identification letter “B” or “V” in the pac kage marking (on the top si de of the package, on th e right side),
guarantee more than 1 million Era se/Write cycle endurance (see Table 2.). For more information about these devices, and their
device identification, please contact your nearest ST s ales office, and ask for the Product Change Notice.
For a list of available options (speed, package, etc.) or for further information on any aspect of this device,
please contact your nearest ST Sales Office.
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M95640, M95320
REVISION HISTORY
Table 33. Document Revision History
DateRev.Description of Revis io n
13-Jul-20001.2
16-Mar-20011.3
19-Jul-20011.4M95160 and M95080 devices removed to their own data sheet
06-Dec-20011.5
18-Dec-20012.0Document reformatted using the new template. No parameters changed.
08-Feb-20022.1
18-Dec-20022.2
26-Mar-20032.3Process indentification letter corrected in footnote to AC Characteristics table for temp. range 3
26-Jun-20032.4-S voltage range upgraded by removing it and inserting -R voltage range in its place
15-Oct-20033.0
21-Nov-20033.1
28-Jan-20044.0TSSOP8 connections added to DIP and SO connections
24-May-20055.0
Human Body Mode l meet s JEDE C std (Table 2). Minor a djust ment s on pp 1, 11,15. New clause
on p7. Addition of TSSOP8 package on pp 1, 2, Ordering Info, Mechanical Data
Test condition added I
t
, t
, t
CLCH
CHCL
DLDH
and t
and ILO, and specification of t
LI
changed to 50ns for the -V range.
DHDL
DLDH
and t
DHDL
removed.
“-V” Voltage range changed to “2.7V to 3.6V” throughout.
Maximum lead soldering time and temperature conditions updated.
Instruction sequence illustrations updated.
“Bus Master and Memory Devices on the SPI bus” illustration updated.
Package Mechanic al da ta updat ed
Endurance increased to 1M write/erase cycles
Instruction sequence illustrations updated
Announcement made of planned upgrade to 10MHz clock for the 5V, –40 to 85°C, range.
Endurance set to 100K write/erase cycles
10MHz, 5MHz, 2MHz clock; 5ms, 10ms Write Time; 100K, 1M erase/write cycles distinguished
on front page, and in the DC and AC Characteristics tables
Table of contents, and Pb-free options added. V
V
(min) and VO(min) corrected (improved) to -0.45V
I
(min) improved to -0.45V
IL
M95320-S and M95640-S root part numbers (1.65 to 5.5V Supply) and related characteristics
added.
20MHz Clock rate added.TSSOP14 package removed and MLP8 package added.
Description of Power On Reset: VCC Lock- Ou t Writ e Pro tec t updated.
Product List summary table added. Absolute Maximum Ratings for V
(min) and VCC(min)
IO
improved. Soldering temperature information clarified for RoHS compliant devices. Device
Grade 3 clarified, with reference to HRCF and automotive environments. AEC-Q100-002
compliance. t
to t
HHQV
.
CHHL
(min) and t
(min) is tCH for products under “S” process. t
CHHH
HHQX
corrected
Figure 17.,Hold Timing updated.
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M95640, M95320
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