ST M93C86, M93C76, M93C66, M93C56, M93C46 User Manual

M9306-BN3T

M93C86, M93C76, M93C66

M93C56, M93C46

16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE® Serial Access EEPROM

FEATURES SUMMARY

■Industry Standard MICROWIRE Bus

■Single Supply Voltage:

–4.5 to 5.5V for M93Cx6

–2.5 to 5.5V for M93Cx6-W

–1.8 to 5.5V for M93Cx6-R

■Dual Organization: by Word (x16) or Byte (x8)

■Programming Instructions that work on: Byte, Word or Entire Memory

■Self-timed Programming Cycle with AutoErase

■Ready/Busy Signal During Programming

■Speed:

–1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)

–2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G or S)

■Sequential Read Operation

■Enhanced ESD/Latch-Up Behaviour

■More than 1 Million Erase/Write Cycles

■More than 40 Year Data Retention

Table 1. Product List

	Reference		Part	Reference	Part
			Number		Number
			M93C86		M93C56
	M93C86		M93C86-W	M93C56	M93C56-W
			M93C86-R		M93C56-R
			M93C76		M93C46
	M93C76		M93C76-W	M93C46	M93C46-W
			M93C76-R		M93C46-R
			M93C66
	M93C66		M93C66-W
			M93C66-R

Figure 1. Packages

8

1

PDIP8 (BN)

8

1

SO8 (MN) 150 mil width

TSSOP8 (DW) 169 mil width

TSSOP8 (DS) 3x3mm² body size (MSOP)

UFDFPN8 (MB) 2x3mm² (MLP)

August 2004

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TABLE OF CONTENTS

FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 1. Product List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Table 2. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Table 3. Memory Size versus Organization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Table 4. Instruction Set for the M93Cx6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Figure 3. DIP, SO, TSSOP and MLP Connections (Top View). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

MEMORY ORGANIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

POWER-ON DATA PROTECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 5. Instruction Set for the M93C46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 6. Instruction Set for the M93C56 and M93C66 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 7. Instruction Set for the M93C76 and M93C86 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Erase/Write Enable and Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 4. READ, WRITE, EWEN, EWDS Sequences. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Erase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 5. ERASE, ERAL Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Erase All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Write All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 6. WRAL Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

READY/BUSY STATUS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

COMMON I/O OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

CLOCK PULSE COUNTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 7. Write Sequence with One Clock Glitch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Table 8. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Table 9. Operating Conditions (M93Cx6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 10. Operating Conditions (M93Cx6-W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 11. Operating Conditions (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 12. AC Measurement Conditions (M93Cx6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 13. AC Measurement Conditions (M93Cx6-W and M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . 14 Figure 8. AC Testing Input Output Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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Table 14. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 15. DC Characteristics (M93Cx6, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 16. DC Characteristics (M93Cx6, Device Grade 7 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 17. DC Characteristics (M93Cx6-W, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 18. DC Characteristics (M93Cx6-W, Device Grade 7 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 19. DC Characteristics (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 20. AC Characteristics (M93Cx6, Device Grade 6, 7 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Table 21. AC Characteristics (M93Cx6-W, Device Grade 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 22. AC Characteristics (M93Cx6-W, Device Grade 7 or 3) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 23. AC Characteristics (M93Cx6-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 9. Synchronous Timing (Start and Op-Code Input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 10.Synchronous Timing (Read or Write) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 11.Synchronous Timing (Read or Write) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 12.PDIP8 – 8 pin Plastic DIP, 0.25mm lead frame, Package Outline . . . . . . . . . . . . . . . . . 23 Table 24. PDIP8 – 8 pin Plastic DIP, 0.25mm lead frame, Package Mechanical Data . . . . . . . . . . 23 Figure 13.SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Outline . . . . 24 Table 25. SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width, Package Mechanical Data 24

Figure 14.UFDFPN8 (MLP8) 8-lead Ultra thin Fine pitch Dual Flat Package No lead 2x3mm², Outline 25

Table 26. UFDFPN8 (MLP8) 8-lead Ultra thin Fine pitch Dual Flat Package No lead 2x3mm², Data . 25

Figure 15.TSSOP8 3x3mm² – 8 lead Thin Shrink Small Outline, 3x3mm² body size, Package Outline 26

Table 27. TSSOP8 3x3mm² – 8 lead Thin Shrink Small Outline, 3x3mm² body size, Mechanical Data 26

Figure 16.TSSOP8 – 8 lead Thin Shrink Small Outline, Package Outline . . . . . . . . . . . . . . . . . . . 27 Table 28. TSSOP8 – 8 lead Thin Shrink Small Outline, Package Mechanical Data . . . . . . . . . . . . 27

PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Table 29. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 30. How to Identify Current and New Products by the Process Identification Letter . . . . . . . 29

REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Table 31. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

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SUMMARY DESCRIPTION

These electrically erasable programmable memory (EEPROM) devices are accessed through a Serial Data Input (D) and Serial Data Output (Q) using the MICROWIRE bus protocol.

Figure 2. Logic Diagram

VCC

D				Q

C

M93Cx6

S

ORG

VSS

AI01928

Table 2. Signal Names

S	Chip Select Input
D	Serial Data Input
Q	Serial Data Output
C	Serial Clock
ORG	Organisation Select
VCC	Supply Voltage
VSS	Ground

The memory array organization may be divided into either bytes (x8) or words (x16) which may be selected by a signal applied on Organization Select (ORG). The bit, byte and word sizes of the memories are as shown in Table 3..

Table 3. Memory Size versus Organization

		Number	Number	Number
	Device		of 8-bit	of 16-bit
		of Bits
			Bytes	Words
	M93C86	16384	2048	1024
	M93C76	8192	1024	512
	M93C66	4096	512	256
	M93C56	2048	256	128
	M93C46	1024	128	64

The M93Cx6 is accessed by a set of instructions, as summarized in Table 4., and in more detail in Table 5. to Table 7.).

Table 4. Instruction Set for the M93Cx6

Instruction	Description	Data
READ	Read Data from Memory	Byte or Word
WRITE	Write Data to Memory	Byte or Word
EWEN	Erase/Write Enable
EWDS	Erase/Write Disable
ERASE	Erase Byte or Word	Byte or Word
ERAL	Erase All Memory
WRAL	Write All Memory
	with same Data

A Read Data from Memory (READ) instruction loads the address of the first byte or word to be read in an internal address register. The data at this address is then clocked out serially. The address register is automatically incremented after the data is output and, if Chip Select Input (S) is held High, the M93Cx6 can output a sequential stream of data bytes or words. In this way, the memory can be read as a data stream from eight to 16384 bits long (in the case of the M93C86), or continuously (the address counter automatically rolls over to 00h when the highest address is reached).

Programming is internally self-timed (the external clock signal on Serial Clock (C) may be stopped or left running after the start of a Write cycle) and does not require an Erase cycle prior to the Write instruction. The Write instruction writes 8 or 16 bits at a time into one of the byte or word locations of the M93Cx6. After the start of the programming cycle, a Busy/Ready signal is available on Serial Data Output (Q) when Chip Select Input (S) is driven High.

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An internal Power-on Data Protection mechanism in the M93Cx6 inhibits the device when the supply is too low.

Figure 3. DIP, SO, TSSOP and MLP

Connections (Top View)

		M93Cx6
S	1		8		VCC
C	2		7		DU
D	3		6		ORG
Q		4	5		VSS
			AI01929B

Note: 1. See PACKAGE MECHANICAL section for package dimensions, and how to identify pin-1.

2. DU = Don’t Use.

The DU (Don’t Use) pin does not contribute to the normal operation of the device. It is reserved for use by STMicroelectronics during test sequences. The pin may be left unconnected or may be con-

nected to VCC or VSS. Direct connection of DU to VSS is recommended for the lowest stand-by pow-

er consumption.

MEMORY ORGANIZATION

The M93Cx6 memory is organized either as bytes (x8) or as words (x16). If Organization Select (ORG) is left unconnected (or connected to VCC) the x16 organization is selected; when Organization Select (ORG) is connected to Ground (VSS) the x8 organization is selected. When the M93Cx6 is in stand-by mode, Organization Select (ORG) should be set either to VSS or VCC for minimum power consumption. Any voltage between VSS and VCC applied to Organization Select (ORG) may increase the stand-by current.

POWER-ON DATA PROTECTION

To prevent data corruption and inadvertent write operations during power-up, a Power-On Reset (POR) circuit resets all internal programming circuitry, and sets the device in the Write Disable mode.

–At Power-up and Power-down, the device must not be selected (that is, Chip Select Input

(S) must be driven Low) until the supply

voltage reaches the operating value VCC specified in Table 9. to Table 11..

–When VCC reaches its valid level, the device is properly reset (in the Write Disable mode) and is ready to decode and execute incoming instructions.

For the M93Cx6 devices (5V range) the POR threshold voltage is around 3V. For the M93Cx6- W (3V range) and M93Cx6-R (2V range) the POR threshold voltage is around 1.5V.

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INSTRUCTIONS

The instruction set of the M93Cx6 devices contains seven instructions, as summarized in Table 5. to Table 7.. Each instruction consists of the following parts, as shown in Figure 4.:

■Each instruction is preceded by a rising edge on Chip Select Input (S) with Serial Clock (C) being held Low.

■A start bit, which is the first ‘1’ read on Serial Data Input (D) during the rising edge of Serial Clock (C).

■Two op-code bits, read on Serial Data Input

(D) during the rising edge of Serial Clock (C). (Some instructions also use the first two bits of the address to define the op-code).

Table 5. Instruction Set for the M93C46

■The address bits of the byte or word that is to be accessed. For the M93C46, the address is made up of 6 bits for the x16 organization or 7 bits for the x8 organization (see Table 5.). For the M93C56 and M93C66, the address is made up of 8 bits for the x16 organization or 9 bits for the x8 organization (see Table 6.). For the M93C76 and M93C86, the address is made up of 10 bits for the x16 organization or 11 bits for the x8 organization (see Table 7.).

The M93Cx6 devices are fabricated in CMOS technology and are therefore able to run as slow as 0 Hz (static input signals) or as fast as the maximum ratings specified in Table 20. to Table 23..

					x8 Origination (ORG = 0)			x16 Origination (ORG = 1)
Instruc		Start	Op-
	Description						Required			Required
tion		bit	Code		Address1			Address1
						Data	Clock		Data	Clock
							Cycles			Cycles
READ	Read Data from	1	10		A6-A0	Q7-Q0		A5-A0	Q15-Q0
	Memory
WRITE	Write Data to	1	01		A6-A0	D7-D0	18	A5-A0	D15-D0	25
	Memory
EWEN	Erase/Write Enable	1	00		11X XXXX		10	11 XXXX		9
EWDS	Erase/Write Disable	1	00		00X XXXX		10	00 XXXX		9
ERASE	Erase Byte or Word	1	11		A6-A0		10	A5-A0		9
ERAL	Erase All Memory	1	00		10X XXXX		10	10 XXXX		9
WRAL	Write All Memory	1	00		01X XXXX	D7-D0	18	01 XXXX	D15-D0	25
	with same Data
Note: 1. X = Don’t Care bit.

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Table 6. Instruction Set for the M93C56 and M93C66

					x8 Origination (ORG = 0)			x16 Origination (ORG = 1)
Instruc		Start	Op-
	Description						Required			Required
tion		bit	Code		Address1,2			Address1,3
						Data	Clock		Data	Clock
							Cycles			Cycles
READ	Read Data from	1	10		A8-A0	Q7-Q0		A7-A0	Q15-Q0
	Memory
WRITE	Write Data to	1	01		A8-A0	D7-D0	20	A7-A0	D15-D0	27
	Memory
EWEN	Erase/Write Enable	1	00		1 1XXX		12	11XX		11
					XXXX			XXXX
EWDS	Erase/Write Disable	1	00		0 0XXX		12	00XX		11
					XXXX			XXXX
ERASE	Erase Byte or Word	1	11		A8-A0		12	A7-A0		11
ERAL	Erase All Memory	1	00		1 0XXX		12	10XX		11
					XXXX			XXXX
WRAL	Write All Memory	1	00		0 1XXX	D7-D0	20	01XX	D15-D0	27
	with same Data				XXXX			XXXX

Note: 1. X = Don’t Care bit.

2.Address bit A8 is not decoded by the M93C56.

3.Address bit A7 is not decoded by the M93C56.

Table 7. Instruction Set for the M93C76 and M93C86

					x8 Origination (ORG = 0)			x16 Origination (ORG = 1)
Instruc		Start	Op-
	Description						Required			Required
tion		bit	Code		Address1,2			Address1,3
						Data	Clock		Data	Clock
							Cycles			Cycles
READ	Read Data from	1	10		A10-A0	Q7-Q0		A9-A0	Q15-Q0
	Memory
WRITE	Write Data to	1	01		A10-A0	D7-D0	22	A9-A0	D15-D0	29
	Memory
EWEN	Erase/Write Enable	1	00		11X XXXX		14	11 XXXX		13
					XXXX			XXXX
EWDS	Erase/Write Disable	1	00		00X XXXX		14	00 XXXX		13
					XXXX			XXXX
ERASE	Erase Byte or Word	1	11		A10-A0		14	A9-A0		13
ERAL	Erase All Memory	1	00		10X XXXX		14	10 XXXX		13
					XXXX			XXXX
WRAL	Write All Memory	1	00		01X XXXX	D7-D0	22	01 XXXX	D15-D0	29
	with same Data				XXXX			XXXX

Note: 1. X = Don’t Care bit.

2.Address bit A10 is not decoded by the M93C76.

3.Address bit A9 is not decoded by the M93C76.

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Read

The Read Data from Memory (READ) instruction outputs data on Serial Data Output (Q). When the instruction is received, the op-code and address are decoded, and the data from the memory is transferred to an output shift register. A dummy 0 bit is output first, followed by the 8-bit byte or 16bit word, with the most significant bit first. Output data changes are triggered by the rising edge of Serial Clock (C). The M93Cx6 automatically increments the internal address register and clocks out the next byte (or word) as long as the Chip Select Input (S) is held High. In this case, the dummy 0 bit is not output between bytes (or words) and a continuous stream of data can be read.

Erase/Write Enable and Disable

The Erase/Write Enable (EWEN) instruction enables the future execution of erase or write instructions, and the Erase/Write Disable (EWDS) instruction disables it. When power is first applied, the M93Cx6 initializes itself so that erase and write instructions are disabled. After an Erase/Write Enable (EWEN) instruction has been executed, erasing and writing remains enabled until an Erase/ Write Disable (EWDS) instruction is executed, or until VCC falls below the power-on reset threshold voltage. To protect the memory contents from accidental corruption, it is advisable to issue the Erase/Write Disable (EWDS) instruction after every write cycle. The Read Data from Memory (READ) instruction is not affected by the Erase/ Write Enable (EWEN) or Erase/Write Disable (EWDS) instructions.

Figure 4. READ, WRITE, EWEN, EWDS Sequences

READ S

D

1 1 0 An

A0

Q

ADDR

Qn

DATA OUT

Q0

OP

CODE

WRITE

S

CHECK

D

STATUS

1

0

1

An

A0

Dn

D0

Q

ADDR

DATA IN

BUSY

READY

OP

CODE

ERASE

S

ERASE S

WRITE

WRITE

ENABLE

DISABLE

D

1 0 0 1 1 Xn X0

D

1 0 0 0 0 Xn X0

OP

OP

CODE

CODE

AI00878C

Note: For the meanings of An, Xn, Qn and Dn, see Table 5., Table 6. and Table 7..

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Erase

The Erase Byte or Word (ERASE) instruction sets the bits of the addressed memory byte (or word) to 1. Once the address has been correctly decoded, the falling edge of the Chip Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be detected by monitoring the Ready/ Busy line, as described in the READY/BUSY STATUS section.

Write

For the Write Data to Memory (WRITE) instruction, 8 or 16 data bits follow the op-code and address bits. These form the byte or word that is to be written. As with the other bits, Serial Data Input (D) is sampled on the rising edge of Serial Clock (C).

Figure 5. ERASE, ERAL Sequences

After the last data bit has been sampled, the Chip Select Input (S) must be taken Low before the next rising edge of Serial Clock (C). If Chip Select Input

(S) is brought Low before or after this specific time frame, the self-timed programming cycle will not be started, and the addressed location will not be programmed. The completion of the cycle can be detected by monitoring the Ready/Busy line, as described later in this document.

Once the Write cycle has been started, it is internally self-timed (the external clock signal on Serial Clock (C) may be stopped or left running after the start of a Write cycle). The cycle is automatically preceded by an Erase cycle, so it is unnecessary to execute an explicit erase instruction before a Write Data to Memory (WRITE) instruction.

ERASE

S

CHECK

STATUS

D

1 1 1

An

A0

Q

ADDR

BUSY

READY

OP

CODE

ERASE

S

ALL

CHECK

STATUS

D

1

0 0

1

0

Xn X0

Q

ADDR

BUSY

READY

OP

CODE

AI00879B

Note: For the meanings of An and Xn, please see Table 5., Table 6. and Table 7..

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M93C86, M93C76, M93C66, M93C56, M93C46

Erase All

The Erase All Memory (ERAL) instruction erases the whole memory (all memory bits are set to 1). The format of the instruction requires that a dummy address be provided. The Erase cycle is conducted in the same way as the Erase instruction (ERASE). The completion of the cycle can be detected by monitoring the Ready/Busy line, as described in the READY/BUSY STATUS section.

Figure 6. WRAL Sequence

Write All

As with the Erase All Memory (ERAL) instruction, the format of the Write All Memory with same Data (WRAL) instruction requires that a dummy address be provided. As with the Write Data to Memory (WRITE) instruction, the format of the Write All Memory with same Data (WRAL) instruction requires that an 8-bit data byte, or 16-bit data word, be provided. This value is written to all the addresses of the memory device. The completion of the cycle can be detected by monitoring the Ready/Busy line, as described next.

WRITE

S

ALL

CHECK

STATUS

D

1

0 0 0

1 Xn X0

Dn

D0

Q

ADDR

DATA IN

BUSY

READY

OP

CODE

AI00880C

Note: For the meanings of Xn and Dn, please see Table 5., Table 6. and Table 7..

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