ST M74HCT7007 User Manual

M74HCT7007

HEX BUFFER

■ HIGH SPEED:

t

= 14ns (TYP.) at VCC=4.5V

PD

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ COMPA TIBLE WITH TTL OUTPUTS :

V

= 2V (MIN.) VIL = 0.8V (MAX)

IH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

| = IOL = 4mA (MIN)

74 SERIES 7007

DESCRIPTION

The M74HCT7007 is an high speed CMOS HEX BUFFER fabricated with silicon gate C

2

MOS technology. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

TSSOPDIP SOP

ORDER CODES

PACK. TUBE T & R

DIP M74HCT7007B1R

SOP M74HCT7007M1R M74HCT7007RM13TR

TSSOP M74HCT7007TTR

The M74HCT7007 is designed to directly interface

2

HSC

MOS systems with TTL and NMOS

components.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8September 2001

M74HCT7007

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 3, 5, 9, 1 1,

13

2, 4, 6, 8, 10,

12

7 GND Ground (0V)

14

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10 m W/°C from 65 °C to 85°C

1A to 6A Data Inputs

1Y to 6Y Data Outputs

V

CC

Positive Supply Voltage

AY

LL

HH

-0.5 to +7 V V V

± 20 mA ± 20 mA ± 25 mA ± 50 mA

500(*) mW

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

2/8

V

V T t

r

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

, t

Input Rise and Fall Time (VCC = 4.5 to 5.5V)

f

4.5 to 5.5 V

CC CC

-55 to 125 °C 0 to 500 ns

V V

DC SPECIFICATIONS

Symbol Parameter

V

I

∆ I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage Low Level Output

OL

Voltage

I

Input Leakage

I

Current Quiescent Supply

CC

Current Additional Worst

CC

Case Supply Current

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

4.5 to

2.0 2.0 2.0 V

5.5

4.5 to

0.8 0.8 0.8 V

5.5

4.5

5.5

IO=-20 µA

I

=-4.0 mA

O

IO=20 µA

I

=4.0 mA

O

= VCC or GND

V

I

= VCC or GND

V

I

5.5 Per Input pin

V

= 0.5V or

I

V

= 2.4V

I

4.4 4.5 4.4 4.4

4.18 4.31 4.13 4.10

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA

2.0 2.9 3.0 mA

Other Inputs at

V

or GND

CC

I

= 0

O

M74HCT7007

-40 to 85°C -55 to 125°C

11020µA

Unit

V

AC ELECTRICAL CHARACTERISTICS (C

= 50 pF, Input tr = tf = 6ns)

L

Test Condition Value

Symbol Parameter

t

TLH tTHL

t

PLH tPHL

Output Transition Time

Propagation Delay Time

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

4.5 8151923ns

4.5 14 23 29 35 ns

-40 to 85°C -55 to 125°C

Unit

T

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance (note

V

CC

(V)

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

5101010pF

22 pF

1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/6 (per buffer)

CC(opr)

Unit

3/8