M74HCT652
OCTAL BUS TRANSCEIVER/REGISTER
WITH 3 STATE OUTPUTS
■ HIGH SPEED:
f
= 55 MHz (TYP.) at VCC = 4.5V
MAX
■ LOW POWER DISSIPATION:
I
= 4µA(MAX.) at TA=25°C
CC
■ COMPAT I B L E WITH TTL OU TPUTS :
V
= 2V (MIN.) VIL = 0.8V (MAX)
IH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 6mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PHL
PLH
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 652
DESCRIPTION
The 74HCT652 is an advanced high-speed
CMOS OCTAL BUS TRANSCEIVER AND
REGISTER (3-STATE) fabricated with silicon gate
2
C
MOS technology.
This device consists of bus transceiver circuits,
D-type flip-flops, and control circuitry arranged f or
multiplexed transmission of data directly from the
input bus or from the internal storage registers.
Enable GAB and GBA
are provided to control the
transceiver functions. Select AB(SAB) and select
BA(SBA) control pins are provided to select
whether real-time or stored data is transferred. A
low input level selects real-time da ta, and a high
selects stored data.
Data on the A or B bus, or both, can be stored i n
the internal D flip-flops by low-to-high transition at
the appropriate clock pins (CLOCK AB or CLOCK
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HCT652B1R
SOP M74HCT652M1R M74HCT652RM13TR
TSSOP M74HCT652TTR
BA) regardless of the select or enable control pins.
When select AB and select BA are in the real time
transfer mode, it is also possible to store data
without using the internal D type flip-flops by
simultaneously enabling GAB and GBA. In this
configuration each output reinforces its input.
Thus, when all other data sources to t he two sets
of bus lines are at high impedance, each set of
bus lines will remain at its last state.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/15April 2003
M74HCT652
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1 CAB A to B Clock Input (LOW
2 SAB Select A to B Source Input
3 GAB Direction Control Input
4, 5, 6, 7, 8,
9, 10, 11
20, 19, 18,
17, 16, 15,
14, 13
21 GBA
22 SBA Select B to A Source Input
23 CBA B to A Clock Input (LOW
12 GND Ground (0V)
24 V
TRUTH TABLE
A1 to A8 A Data Inputs/Outputs
B1 to B8 B Data Inputs/Outputs
CC
to HIGH, Edge-Triggered)
Output Enable Input
(Active LOW)
to HIGH, Edge Triggered)
Positive Supply Voltage
GAB GBA CAB CBA SAB SBA A B FUNCTION
INPUTS INPUTS Both the A bus and the B bus are inputs
LH
LL
HH
X X X X Z Z The Output functions of the A and B bus are disabled
X X INPUTS INPUTS
OUTPUTS INPUTS The A bus are outputs and the B bus are inputs
X* X X L
X* X L
X* X X H Qn X
X* X H
XX*L X
X* L X
XX*HX X Qn
X* H X L L The data at the A bus are stored to the internal flip-flop
X* H X H H
LL
HH
L L The data at the B bus are displayed at the A bus. The
HH
L L The data at the B bus are stored to the internal flip-flop
HH
INPUTS OUTPUTS The A bus are inputs and the B bus are outputs.
LL
HH
L L The data at the A bus are displayed at the B bus. The
HH
Both the A and B bus are used for inputs to the internal
flip-flops. Data at the bus will be stored on low to high
transition of the clock inputs.
The data at the B bus are displayed at the A bus
data of the B bus are stored to internal flip-flop on low
to high transition of the clock pulse
The data stored to the internal flip-flop are displayed at
the A bus.
on low to high transition of the clock pulse. The states
of the internal flip-flops output directly to the A bus.
The data at the A bus are displayed at the B bus
data of the A bus are stored to the internal flip-flop on
low to high transition of the clock pulse.
The data stored to the internal flip-flops are displayed
at the B bus
on low to high transition of the clock pulse. The states
of the internal flip-flops output directly to the B bus.
2/15
M74HCT652
GAB GBA
HL
X : Don’t Care
Z : High Impedance
Qn : The data stored to the internal flip-flops by mo st recent low to hi gh transition of the clock inputs
* : The data at the A and B bus will be stored to the internal flip-flops on every low to high transition of the clock inputs.
CAB CBA SAB SBA A B FUNCTION
OUTPUTS OUTPUTS
XXHH Qn Qn
H H Qn Qn
The data stored to the internal flip-flops are displayed
at the A and B bus respectively.
The output at the A bus are displayed at the B bus, the
output at the B bus are displayed at the A bus respectively
LOGIC DIAGRAM
TIMING CHART
3/15
M74HCT652
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10m W/°C from 65°C to 85°C
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
, t
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
f
-0.5 to +7 V
± 20 mA
± 20 mA
± 35 mA
± 70 mA
500(*) mW
-65 to +150 °C
300 °C
4.5 to 5.5 V
CC
CC
-55 to 125 °C
0 to 500 ns
V
V
V
V
4/15
DC SPECIFICATIONS
Test Condition Value
Symbol Parameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
High Impedance
OZ
Output Leakage
Current
Quiescent Supply
I
CC
Current
∆ I
Additional Worst
CC
Case Supply
Current
(*) Applicable Only to GAB, GBA, CAB, CBA, SAB, SBA Input
V
CC
(V)
4.5
to
5.5
4.5
to
5.5
4.5
4.5
5.5
5.5
5.5
IO=-20 µA
I
=-6.0 mA
O
IO=20 µA
I
=6.0 mA
O
= VCC or GND
V
I
= VIH or V
V
I
VO = VCC or GND
V
= VCC or GND
I
5.5 Per Input pin
= 0.5V or
V
I
V
= 2.4V
I
Other Inputs at
VCC or GND
I
= 0
O
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
2.0 2.0 2.0 V
0.8 0.8 0.8 V
4.4 4.5 4.4 4.4
4.18 4.31 4.13 4.10
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
± 0.1 ± 1 ± 1 µA
IL
± 0.5 ± 5 ± 10 µA
44080µA
2.0 2.9 3.0 mA
M74HCT652
Unit
V
V
5/15