The 74HCT652 is an advanced high-speed
CMOS OCTAL BUS TRANSCEIVER AND
REGISTER (3-STATE) fabricated with silicon gate
2
C
MOS technology.
This device consists of bus transceiver circuits,
D-type flip-flops, and control circuitry arranged f or
multiplexed transmission of data directly from the
input bus or from the internal storage registers.
Enable GAB and GBA
are provided to control the
transceiver functions. Select AB(SAB) and select
BA(SBA) control pins are provided to select
whether real-time or stored data is transferred. A
low input level selects real-time da ta, and a high
selects stored data.
Data on the A or B bus, or both, can be stored i n
the internal D flip-flops by low-to-high transition at
the appropriate clock pins (CLOCK AB or CLOCK
TSSOPDIPSOP
ORDER CODES
PACKAGETUBET & R
DIPM74HCT652B1R
SOPM74HCT652M1R M74HCT652RM13TR
TSSOPM74HCT652TTR
BA) regardless of the select or enable control pins.
When select AB and select BA are in the real time
transfer mode, it is also possible to store data
without using the internal D type flip-flops by
simultaneously enabling GAB and GBA. In this
configuration each output reinforces its input.
Thus, when all other data sources to t he two sets
of bus lines are at high impedance, each set of
bus lines will remain at its last state.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/15April 2003
M74HCT652
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
1CABA to B Clock Input (LOW
2SABSelect A to B Source Input
3GABDirection Control Input
4, 5, 6, 7, 8,
9, 10, 11
20, 19, 18,
17, 16, 15,
14, 13
21GBA
22SBASelect B to A Source Input
23CBAB to A Clock Input (LOW
12GNDGround (0V)
24V
TRUTH TABLE
A1 to A8A Data Inputs/Outputs
B1 to B8B Data Inputs/Outputs
CC
to HIGH, Edge-Triggered)
Output Enable Input
(Active LOW)
to HIGH, Edge Triggered)
Positive Supply Voltage
GAB GBA CAB CBA SAB SBAABFUNCTION
INPUTSINPUTSBoth the A bus and the B bus are inputs
LH
LL
HH
XXXXZZThe Output functions of the A and B bus are disabled
XXINPUTSINPUTS
OUTPUTSINPUTSThe A bus are outputs and the B bus are inputs
X*XXL
X*XL
X*XXHQnX
X*XH
XX*L X
X*LX
XX*HXXQn
X*HXLLThe data at the A bus are stored to the internal flip-flop
X*HXHH
LL
HH
LLThe data at the B bus are displayed at the A bus. The
HH
LLThe data at the B bus are stored to the internal flip-flop
HH
INPUTSOUTPUTS The A bus are inputs and the B bus are outputs.
LL
HH
LLThe data at the A bus are displayed at the B bus. The
HH
Both the A and B bus are used for inputs to the internal
flip-flops. Data at the bus will be stored on low to high
transition of the clock inputs.
The data at the B bus are displayed at the A bus
data of the B bus are stored to internal flip-flop on low
to high transition of the clock pulse
The data stored to the internal flip-flop are displayed at
the A bus.
on low to high transition of the clock pulse. The states
of the internal flip-flops output directly to the A bus.
The data at the A bus are displayed at the B bus
data of the A bus are stored to the internal flip-flop on
low to high transition of the clock pulse.
The data stored to the internal flip-flops are displayed
at the B bus
on low to high transition of the clock pulse. The states
of the internal flip-flops output directly to the B bus.
2/15
M74HCT652
GAB GBA
HL
X : Don’t Care
Z : High Impedance
Qn : The data stored to the internal flip-flops by mo st recent low to hi gh transition of the clock inputs
* : The data at the A and B bus will be stored to the internal flip-flops on every low to high transition of the clock inputs.
CAB CBA SAB SBAABFUNCTION
OUTPUTS OUTPUTS
XXHH QnQn
HHQnQn
The data stored to the internal flip-flops are displayed
at the A and B bus respectively.
The output at the A bus are displayed at the B bus, the
output at the B bus are displayed at the A bus respectively
LOGIC DIAGRAM
TIMING CHART
3/15
M74HCT652
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
I
I
OK
I
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
t
r
Supply Voltage
CC
DC Input Voltage-0.5 to VCC + 0.5
I
DC Output Voltage-0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10m W/°C from 65°C to 85°C
Supply Voltage
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature
op
, t
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
f
-0.5 to +7V
± 20mA
± 20mA
± 35mA
± 70mA
500(*)mW
-65 to +150°C
300°C
4.5 to 5.5V
CC
CC
-55 to 125°C
0 to 500ns
V
V
V
V
4/15
DC SPECIFICATIONS
Test ConditionValue
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
High Impedance
OZ
Output Leakage
Current
Quiescent Supply
I
CC
Current
∆ I
Additional Worst
CC
Case Supply
Current
(*) Applicable Only to GAB, GBA, CAB, CBA, SAB, SBA Input
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t). Averag e operating cu rrent can be ob ta i ned by the following equat io n. I
channel)
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/8 (per
CC(opr)
Unit
6/15
TEST CIRCUIT
TESTSWITCH
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL = 50pF/150p F or equivalen t (includes ji g and probe capa citance)
R
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