ST M74HCT367 User Manual

ST M74HCT367 User Manual

M74HCT367

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

HIGH SPEED:

tPD = 14ns (TYP.) at VCC = 4.5V

LOW POWER DISSIPATION: ICC = 4μA(MAX.) at TA=25°C

COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX)

SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 6mA (MIN)

BALANCED PROPAGATION DELAYS: tPLH tPHL

PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 367

DESCRIPTION

The M74HCT367 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology.

This device contains six buffers, four buffers are controlled by an enable input (G1) and the other two buffers are controlled by the other enable input (G2); the outputs of each buffer group are enabled when G1 and/or G2 inputs are held low,

DIP

SOP

TSSOP

 

 

ORDER CODES

 

PACKAGE

 

TUBE

T & R

 

 

 

 

DIP

 

M74HCT367B1R

 

 

 

 

 

SOP

 

M74HCT367M1R

M74HCT367RM13TR

 

 

 

 

TSSOP

 

 

M74HCT367TTR

 

 

 

 

and when held high, these outputs are disabled in a high-impedance state.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

September 2001

1/9

M74HCT367

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

 

 

PIN No

SYMBOL

NAME AND FUNCTION

 

1, 15

G1, G2

3 State Output Enable

 

 

 

Input

 

2, 4, 6, 10,

1A to 6A

Data Inputs

 

12, 14

 

 

 

3, 5, 7, 9, 11,

1Y to 6Y

Data Outputs

 

13

 

 

 

8

GND

Ground (0V)

 

16

VCC

Positive Supply Voltage

TRUTH TABLE

 

 

 

 

 

 

 

 

 

 

INPUTS

 

OUTPUTS

 

 

 

 

 

 

G

 

An

Yn

 

 

 

 

 

 

L

 

L

L

 

 

 

 

 

 

L

 

H

H

 

 

 

 

 

 

H

 

X

Z

 

 

 

 

X: Don’t Care

 

 

Z: High Impedance

 

 

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

 

 

 

 

VCC

Supply Voltage

-0.5 to +7

V

VI

DC Input Voltage

-0.5 to VCC + 0.5

V

VO

DC Output Voltage

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

± 20

mA

IOK

DC Output Diode Current

± 20

mA

IO

DC Output Current

± 35

mA

ICC or IGND

DC VCC or Ground Current

± 70

mA

PD

Power Dissipation

500(*)

mW

Tstg

Storage Temperature

-65 to +150

°C

TL

Lead Temperature (10 sec)

300

°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Value

Unit

 

 

 

 

VCC

Supply Voltage

4.5 to 5.5

V

VI

Input Voltage

0 to VCC

V

VO

Output Voltage

0 to VCC

V

Top

Operating Temperature

-55 to 125

°C

tr, tf

Input Rise and Fall Time (VCC = 4.5 to 5.5V)

0 to 500

ns

2/9

M74HCT367

DC SPECIFICATIONS

 

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

 

 

TA = 25°C

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

High Level Input

4.5

 

 

2.0

 

 

 

2.0

 

2.0

 

V

 

Voltage

to

 

 

 

 

 

 

 

 

 

5.5

 

 

 

 

 

 

 

 

 

 

 

VIL

Low Level Input

4.5

 

 

 

 

 

0.8

 

0.8

 

0.8

V

 

Voltage

to

 

 

 

 

 

 

 

 

 

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

High Level Output

4.5

 

IO=-20 μA

4.4

 

4.5

 

4.4

 

4.4

 

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

IO=-6.0 mA

4.18

 

4.31

 

4.13

 

4.10

 

 

 

 

 

 

 

 

 

 

VOL

Low Level Output

4.5

 

IO=20 μA

 

 

0.0

0.1

 

0.1

 

0.1

V

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

IO=6.0 mA

 

 

0.17

0.26

 

0.33

 

0.40

 

 

 

 

 

 

 

 

 

II

Input Leakage

5.5

 

VI = VCC or GND

 

 

 

± 0.1

 

± 1

 

± 1

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

High Impedance

5.5

 

VI = VIH or VIL

 

 

 

± 0.5

 

± 5

 

± 10

μA

 

Output Leakage

 

VO = VCC or GND

 

 

 

 

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Quiescent Supply

5.5

 

VI = VCC or GND

 

 

 

4

 

40

 

80

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Additional Worst

5.5

 

Per Input pin

 

 

 

2.0

 

2.9

 

3.0

mA

 

Case Supply

 

 

VI = 0.5V or

 

 

 

 

 

 

 

 

 

 

Current

 

 

VI = 2.4V

 

 

 

 

 

 

 

 

 

 

 

 

 

Other Inputs at

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC or GND

 

 

 

 

 

 

 

 

 

 

 

 

 

IO = 0

 

 

 

 

 

 

 

 

 

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)

 

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

CL

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(V)

 

(pF)

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tTLH tTHL

Output Transition

4.5

 

50

 

 

7

 

12

 

15

 

18

ns

 

Time

 

 

 

 

 

 

 

 

 

 

 

 

 

tPLH tPHL

Propagation Delay

4.5

 

50

 

 

14

 

22

 

28

 

33

ns

 

Time

4.5

 

150

 

 

18

 

28

 

35

 

42

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPZL tPZH

High Impedance

4.5

 

50

RL = 1 KΩ

 

16

 

25

 

31

 

38

ns

 

Output Enable

 

 

 

 

 

 

 

 

 

 

 

 

 

4.5

 

150

RL = 1 KΩ

 

20

 

31

 

39

 

47

 

Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPLZ tPHZ

High Impedance

 

 

 

RL = 1 KΩ

 

 

 

 

 

 

 

 

 

 

Output Disable

4.5

 

50

 

18

 

25

 

31

 

38

ns

 

Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3/9

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