ST M74HCT14 User Manual

M74HCT14

HEX SCHMITT INVERTER

■ HIGH SPEED:

t

= 19ns (TYP.) at VCC = 4.5V

PD

■ LOW POWER DISSIPATION:

= 1µA(MAX.) at TA=25°C

I

CC

■ HIGH NOISE IMMUNITY :

V

= 0.7V (TYP) at Vcc = 4.5V

H

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

| = IOL = 4mA (MIN)

74 SERIES 14

DESCRIPTION

The M74HCT14 is an high speed CMOS HEX SCHMI TT IN VE RTER fabr icat ed with s ilicon ga te

2

C

MOS technology. Pin configuration and function are the same as those of the M74HCT04 but all inputs have 0.7 V hysteresis level. This together with its schmitt trigger function allows it to be used on line receiver with slow rise/fall input signals.

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HCT14B1R

SOP M74HCT14M1R M74HCT14RM13TR

TSSOP M74HCT14TTR

The M74HCT14 is designed to directly interface

2

HSC

MOS systems with TTL and NMOS components. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8July 2001

M74HCT14

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 3, 5, 9, 1 1,

13

2, 4, 6, 8, 10,

12

7 GND Ground (0V)

14

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW b y 10mW/°C from 65° C to 85°C

1A to 6A Data Inputs

1Y to 6Y Data Outputs

V

CC

Positive Supply Voltage

AY

LH

HL

-0.5 to +7 V V V

± 20 mA ± 20 mA ± 25 mA ± 50 mA

500(*) mW

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

T

2/8

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

4.5 to 5.5 V

CC CC

-55 to 125 °C

V V

DC SPECIFICATIONS

Symbol Param eter

V

High Level

P

Threshold Voltage

V

Low Level

N

Threshold Voltage

V

Hysteresis Voltage 4.5 0.4 0.7 1.4 0.4 1.4 0.4 1.4

H

V

I

High Level Output

OH

Voltage Low Level Output

OL

Voltage

I

Input Leakage

I

Current Quiescent Supply

CC

Current

M74HCT14

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

4.5 1.2 1.55 1.9 1.2 1.9 1.2 1.9

5.5 1.4 1.75 2.1 1.4 2.1 1.4 2.1

4.5 0.5 0.85 1.2 0.5 1.2 0.5 1.2

5.5 0.6 1.1 1.4 0.6 1.4 0.6 1.4

5.5 0.4 0.7 1.5 0.4 1.5 0.4 1.5

4.5

5.5

IO=-20 µA

I

=-4.0 mA

O

IO=20 µA

I

=4.0 mA

O

V

= VCC or GND

I

= VCC or GND

V

I

4.4 4.5 4.4 4.4

4.18 4.31 4.13 4.10

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

-40 to 85°C -55 to 125°C

± 0.1 ± 1 ± 1 µA

11020µA

Unit

V

AC ELECTRICAL CHARACTERISTICS (C

= 50 pF, Input tr = tf = 6ns)

L

Test Condition Value

T

Symbol Parameter

t

TLH tTHL

t

PLH tPHL

Output Transition Time

Propagation Delay Time

V

CC

(V)

4.5 8151922ns

4.5 19 30 38 45 ns

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance (note

V

CC

(V)

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

5101010pF

45 pF

1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R ef er to Test Circuit). Aver age opera ting current can be obta i ned by the following equa tion. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC

CC(opr)

Unit

3/8