ST M74HCT04 User Manual

Features

■ High speed:

t

= 11 ns (typ.) at VCC=4.5V

PD

■ Low power dissipation:

I

= 1 μA (max.) at TA =25°C

CC

■ Compatible with TTL outputs:

V

= 2 V (min.) VIL = 0.8 V (max)

IH

■ Balanced propagation delays:

t

≅ t

PLH

■ Symmetrical output impedance:

|I

| = IOL = 4 mA (min)

OH

■ Pin and function compatible with 74 series 04

PHL

M74HCT04

Hex inverter

DIP-14

SO-14

Table 1. Device summary

Order code Package Packing

M74HCT04B1R DIP-14 Tube

M74HCT04RM13TR SO-14 Tape and reel

Description

The M74HCT04 is a high speed CMOS hex inverter fabricated with silicon gate C technology.

The internal circuit is composed of 3 stages including a buffer output, which enables high noise immunity and stable output.

The M74HCT04 is designed to directly interface

2

HSC

MOS systems with TTL and NMOS

components. All inputs are equipped with protection circuits

against static discharge and transient excess voltage.

2

MOS

May 2008 Rev 2 1/11

www.st.com

11

Pin connection and IEC logic symbols M74HCT04

1 Pin connection and IEC logic symbols

Figure 1. Pin connections and IEC logic symbols

14

1A

1

V

CC

1Y 2A

2Y

3A

GND

3Y

2

3

4

5

6

7

13

6A

6Y

12

11

5A 5Y

10

9

4A

4Y

8

Table 2. Pin description

Pin number Symbol Name and function

1, 3, 5, 9, 11, 13 1A to 6A Data inputs 2, 4, 6, 8, 10, 12 1Y to 6Y Data outputs

7 GND Ground (0 V)

14 V

CC

Positive supply voltage

Figure 2. Input and output equivalent circuit

V

CC

Input

GND

Table 3. Truth table

AY

LH

HL

2/11

GND

V

CC

Output

M74HCT04 Maximum rating

2 Maximum rating

Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may aff ect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Table 4. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

CC

I

T

1. 500mW at 65 ° C; derate to 300 mW by 10 mW/ ° C from 65 ° C to 85 ° C

Supply voltage -0.5 to +7 V

CC

DC input voltage -0.5 to VCC + 0.5 V

V

I

DC output voltage -0.5 to VCC + 0.5 V

V

O

I

DC input diode current ± 20 mA

IK

DC output diode current ± 20 mA

I

OK

I

DC output current ± 25 mA

O

or

DC VCC or Ground current ± 50 mA

GND

P

Power dissipation 500

D

Storage temperature -65 to +150 °C

stg

Lead temperature (10 sec) 300 °C

T

L

(1)

mW

Table 5. Recommemded operating conditions

Symbol Parameter Value Unit

V

T

t

Supply voltage 4.5 to 5.5 V

CC

Input voltage 0 to V

V

I

Output voltage 0 to V

O

Operating temperature -55 to 125 °C

op

, tfInput rise and fall time (VCC = 4.5 to 5.5 V) 0 to 500 ns

r

CC CC

V V

3/11

Maximum rating M74HCT04

Table 6. DC specifications

Test condition Value

Symbol Parameter

V

CC

= 25 °C -40 to 85°C

T

A

(V)

Min Typ Max Min Max Min Max

V

I

High level input

IH

voltage

Low level input

V

IL

voltage

High level output

OH

voltage

Low level output

OL

voltage Input leakage

I

current Quiescent supply

CC

current

4.5 to

5.5

4.5 to

5.5

4.5

5.5 V

2.0 2.0 2.0 V

0.8 0.8 0.8 V

I

=-20 μA 4.4 4.5 4.4 4.4

O

= -4.0 mA 4.18 4.31 4.13 4.10

I

O

I

= 20 μA 0.0 0.1 0.1 0.1

O

= 4.0 mA 0.17 0.26 0.33 0.40

I

O

= VCC or GND ± 0.1 ± 1 ± 1 μA

I

= VCC or GND 1 10 20 μA

I

Per input pin

= 0.5 V or

V

Additional worst

Δ I

CC

case supply

5.5

current

Table 7. AC electric al characteristics (CL = 50 pF, input tr = tf = 6 ns)

I

= 2.4 V

V

I

Other inputs at VCC or GND

= 0

I

O

2.0 2.9 3.0 mA

-55 to 125°C

Unit

V

Test condition Value

Symbol Parameter

V

CC

(V)

t

TLH tTHL

t

PLH tPHL

Output transition time

Propagation delay time

4.5 8 15 19 23 ns

4.5 11182327ns

4/11

= 25°C -40 to 85°C

T

A

-55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit