ST M74HC533 User Manual

M74HC533

OCTAL D-TYPE LATCH

WITH 3 STATE OUTPUT INVERTING

■ HIGH SPEED:

t

= 12ns (TYP.) at VCC = 6V

PD

■ LOW POWER DISSIPATION:

I

= 4µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

= V

V

NIH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 6mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28 % VCC (MIN.)

NIL

PHL

74 SERIES 533

DESCRIPTION

The M74HC533 is an high speed CMOS OCTAL
LATCH WITH 3-STATE OUTPUTS fabricated
with silicon gate C

2

MOS technology.

This 8-BIT D-Type la tches is controlled by a latch
enable input (LE) and output enable input (OE

).

While the LE in put is held at a high level, the Q
outputs will follow the data input. When the LE is
taken, the Q outputs will be latched at the logic
level of D input data.

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC533B1R

SOP M74HC533M1R M74HC533RM13TR

TSSOP M74HC533TTR

While the OE

input is at low level, the eight outputs
will be in a norm al logic state (high or low logic
level) and while high le vel the outpu ts will be in a
high impedance state.
The 3-State output configuration and the wide
choice of outline make bus organized system
simple.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/11August 2001

M74HC533

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1OE

2, 5, 6, 9, 12,

15, 16, 19

3, 4, 7, 8, 13,

14, 17, 18

11 LE Latch Enable Input
10 GND Ground (0V)
20 V

TRUTH TABLE

INPUTS OUTPUTS

to Q7 3 State Outputs

Q0

D0 to D7 Data Inputs

CC

3 State Output Enable
Input (Active LOW)

Positive Supply Voltage

OE

LE D Q

HXXZ

L L X NO CHANGE (*)
LHLH
LHHL

X: Don’t Care
Z: High Impedance
(*): Q

Outputs ar e l atched at the time when the LE i nput is taken lo w l ogic level.

LOGIC DIAGRAM

2/11

M74HC533

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

P

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

t

r

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10mW/°C from 65°C to 85°C

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V
V

CC
CC

= 4.5V
= 6.0V

-0.5 to +7 V

± 20 mA
± 20 mA
± 35 mA
± 70 mA

500(*) mW

-65 to +150 °C

300 °C

2 to 6 V

CC
CC

-55 to 125 °C
0 to 1000 ns

0 to 500 ns
0 to 400 ns

V
V

V
V

3/11

M74HC533

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
High Impedance

OZ

Output Leakage
Current

Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

6.0 1.8 1.8 1.8

2.0

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

6.0

6.0

6.0

IO=-20 µA
I

=-20 µA

O

I

=-20 µA

O

I

=-6.0 mA

O

I

=-7.8 mA

O

IO=20 µA
I

=20 µA

O

I

=20 µA

O

I

=6.0 mA

O

I

=7.8 mA

O

= VCC or GND

V

I

= VIH or V

V

I

IL

VO = VCC or GND

= VCC or GND

V

I

1.9 2.0 1.9 1.9

4.4 4.5 4.4 4.4

5.9 6.0 5.9 5.9

4.18 4.31 4.13 4.10

5.68 5.8 5.63 5.60

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

0.18 0.26 0.33 0.40

± 0.1 ± 1 ± 1 µA

± 0.5 ± 5 ± 10 µA

44080µA

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

V

V

4/11